TWI527188B - 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 - Google Patents
在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 Download PDFInfo
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- TWI527188B TWI527188B TW101136575A TW101136575A TWI527188B TW I527188 B TWI527188 B TW I527188B TW 101136575 A TW101136575 A TW 101136575A TW 101136575 A TW101136575 A TW 101136575A TW I527188 B TWI527188 B TW I527188B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
- H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B80/00—Assemblies of multiple devices comprising at least one memory device covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/655—Fan-out layouts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/834—Interconnections on sidewalls of chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
- H10W72/859—Bump connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/879—Bump connectors and bond wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
- H10W72/9445—Top-view layouts, e.g. mirror arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
- H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/26—Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
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- Semiconductor Memories (AREA)
- Dram (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161542553P | 2011-10-03 | 2011-10-03 | |
| US201261600483P | 2012-02-17 | 2012-02-17 | |
| US13/439,317 US8659140B2 (en) | 2011-10-03 | 2012-04-04 | Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201322412A TW201322412A (zh) | 2013-06-01 |
| TWI527188B true TWI527188B (zh) | 2016-03-21 |
Family
ID=48044079
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101136575A TWI527188B (zh) | 2011-10-03 | 2012-10-03 | 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 |
| TW101136590A TWI520284B (zh) | 2011-10-03 | 2012-10-03 | 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 |
| TW105118512A TW201639110A (zh) | 2011-10-03 | 2012-10-03 | 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 |
| TW101136585A TWI546930B (zh) | 2011-10-03 | 2012-10-03 | 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101136590A TWI520284B (zh) | 2011-10-03 | 2012-10-03 | 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 |
| TW105118512A TW201639110A (zh) | 2011-10-03 | 2012-10-03 | 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 |
| TW101136585A TWI546930B (zh) | 2011-10-03 | 2012-10-03 | 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 |
Country Status (5)
| Country | Link |
|---|---|
| EP (2) | EP2764513B1 (enExample) |
| JP (3) | JP5964438B2 (enExample) |
| KR (2) | KR20140081856A (enExample) |
| TW (4) | TWI527188B (enExample) |
| WO (3) | WO2013052321A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9425237B2 (en) | 2014-03-11 | 2016-08-23 | Crossbar, Inc. | Selector device for two-terminal memory |
| US9768234B2 (en) * | 2014-05-20 | 2017-09-19 | Crossbar, Inc. | Resistive memory architecture and devices |
| US10211397B1 (en) | 2014-07-07 | 2019-02-19 | Crossbar, Inc. | Threshold voltage tuning for a volatile selection device |
| US9633724B2 (en) | 2014-07-07 | 2017-04-25 | Crossbar, Inc. | Sensing a non-volatile memory device utilizing selector device holding characteristics |
| US10115819B2 (en) | 2015-05-29 | 2018-10-30 | Crossbar, Inc. | Recessed high voltage metal oxide semiconductor transistor for RRAM cell |
| US9685483B2 (en) | 2014-07-09 | 2017-06-20 | Crossbar, Inc. | Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process |
| US9460788B2 (en) | 2014-07-09 | 2016-10-04 | Crossbar, Inc. | Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor |
| US9698201B2 (en) | 2014-07-09 | 2017-07-04 | Crossbar, Inc. | High density selector-based non volatile memory cell and fabrication |
| US10079192B2 (en) | 2015-05-05 | 2018-09-18 | Mediatek Inc. | Semiconductor chip package assembly with improved heat dissipation performance |
| WO2017049587A1 (en) | 2015-09-25 | 2017-03-30 | Intel Corporation | Packaged integrated circuit device with recess structure |
| TWI615717B (zh) * | 2016-01-25 | 2018-02-21 | 凌陽科技股份有限公司 | 高階製程晶片與低階製程晶片的資料傳輸方法以及使用其之積體電路 |
| US20180005944A1 (en) * | 2016-07-02 | 2018-01-04 | Intel Corporation | Substrate with sub-interconnect layer |
| US10607977B2 (en) * | 2017-01-20 | 2020-03-31 | Google Llc | Integrated DRAM with low-voltage swing I/O |
| US10096362B1 (en) | 2017-03-24 | 2018-10-09 | Crossbar, Inc. | Switching block configuration bit comprising a non-volatile memory cell |
| JP7059970B2 (ja) * | 2019-03-11 | 2022-04-26 | 株式会社デンソー | 半導体装置 |
| KR102026163B1 (ko) * | 2019-07-02 | 2019-09-27 | 김복문 | 반도체 패키지의 배선 보정방법 |
| TWI768294B (zh) * | 2019-12-31 | 2022-06-21 | 力成科技股份有限公司 | 封裝結構及其製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679977A (en) | 1990-09-24 | 1997-10-21 | Tessera, Inc. | Semiconductor chip assemblies, methods of making same and components for same |
| US5148265A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
| US5148266A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies having interposer and flexible lead |
| JPH08186227A (ja) * | 1995-01-05 | 1996-07-16 | Hitachi Ltd | 半導体装置及び電子装置 |
| JPH1187640A (ja) * | 1997-09-09 | 1999-03-30 | Hitachi Ltd | 半導体装置および電子装置 |
| JP2000315776A (ja) * | 1999-05-06 | 2000-11-14 | Hitachi Ltd | 半導体装置 |
| JP3874062B2 (ja) * | 2000-09-05 | 2007-01-31 | セイコーエプソン株式会社 | 半導体装置 |
| US6528408B2 (en) * | 2001-05-21 | 2003-03-04 | Micron Technology, Inc. | Method for bumped die and wire bonded board-on-chip package |
| JP5004385B2 (ja) * | 2001-08-03 | 2012-08-22 | ルネサスエレクトロニクス株式会社 | 半導体メモリチップとそれを用いた半導体メモリ装置 |
| DE10139085A1 (de) * | 2001-08-16 | 2003-05-22 | Infineon Technologies Ag | Leiterplattensystem, Verfahren zum Betreiben eines Leiterplattensystems, Leiterplatteneinrichtung und deren Verwendung, und Halbleitervorrichtung und deren Verwendung |
| KR100454123B1 (ko) * | 2001-12-06 | 2004-10-26 | 삼성전자주식회사 | 반도체 집적 회로 장치 및 그것을 구비한 모듈 |
| JP4906047B2 (ja) * | 2005-11-28 | 2012-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20070241441A1 (en) * | 2006-04-17 | 2007-10-18 | Stats Chippac Ltd. | Multichip package system |
| JP2007013146A (ja) * | 2006-06-26 | 2007-01-18 | Renesas Technology Corp | 半導体集積回路装置 |
| JP4362784B2 (ja) * | 2006-07-06 | 2009-11-11 | エルピーダメモリ株式会社 | 半導体装置 |
| US7696629B2 (en) * | 2007-04-30 | 2010-04-13 | Chipmos Technology Inc. | Chip-stacked package structure |
| KR20100046760A (ko) * | 2008-10-28 | 2010-05-07 | 삼성전자주식회사 | 반도체 패키지 |
-
2012
- 2012-09-26 WO PCT/US2012/057173 patent/WO2013052321A2/en not_active Ceased
- 2012-09-26 KR KR1020147012125A patent/KR20140081856A/ko not_active Withdrawn
- 2012-09-26 EP EP12791306.9A patent/EP2764513B1/en not_active Not-in-force
- 2012-09-26 JP JP2014534599A patent/JP5964438B2/ja not_active Expired - Fee Related
- 2012-09-26 EP EP12773455.6A patent/EP2764512A2/en not_active Withdrawn
- 2012-09-26 KR KR1020147012058A patent/KR20140073559A/ko not_active Withdrawn
- 2012-09-26 WO PCT/US2012/057204 patent/WO2013052324A2/en not_active Ceased
- 2012-09-26 WO PCT/US2012/057170 patent/WO2013052320A1/en not_active Ceased
- 2012-09-26 JP JP2014534602A patent/JP5966009B2/ja not_active Expired - Fee Related
- 2012-10-03 TW TW101136575A patent/TWI527188B/zh not_active IP Right Cessation
- 2012-10-03 TW TW101136590A patent/TWI520284B/zh not_active IP Right Cessation
- 2012-10-03 TW TW105118512A patent/TW201639110A/zh unknown
- 2012-10-03 TW TW101136585A patent/TWI546930B/zh not_active IP Right Cessation
-
2016
- 2016-07-04 JP JP2016132320A patent/JP2016195269A/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP2764513B1 (en) | 2017-04-19 |
| WO2013052320A1 (en) | 2013-04-11 |
| JP2015503214A (ja) | 2015-01-29 |
| JP2016195269A (ja) | 2016-11-17 |
| TW201322412A (zh) | 2013-06-01 |
| KR20140081856A (ko) | 2014-07-01 |
| TW201320297A (zh) | 2013-05-16 |
| JP2014530507A (ja) | 2014-11-17 |
| WO2013052324A3 (en) | 2013-10-31 |
| TW201324708A (zh) | 2013-06-16 |
| JP5966009B2 (ja) | 2016-08-10 |
| EP2764512A2 (en) | 2014-08-13 |
| WO2013052321A3 (en) | 2013-10-17 |
| JP5964438B2 (ja) | 2016-08-03 |
| KR20140073559A (ko) | 2014-06-16 |
| EP2764513A2 (en) | 2014-08-13 |
| WO2013052320A4 (en) | 2013-07-11 |
| WO2013052321A2 (en) | 2013-04-11 |
| TWI546930B (zh) | 2016-08-21 |
| TW201639110A (zh) | 2016-11-01 |
| TWI520284B (zh) | 2016-02-01 |
| WO2013052324A2 (en) | 2013-04-11 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |