TWI527188B - 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 - Google Patents

在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 Download PDF

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Publication number
TWI527188B
TWI527188B TW101136575A TW101136575A TWI527188B TW I527188 B TWI527188 B TW I527188B TW 101136575 A TW101136575 A TW 101136575A TW 101136575 A TW101136575 A TW 101136575A TW I527188 B TWI527188 B TW I527188B
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TW
Taiwan
Prior art keywords
microelectronic
terminals
package
grid
component
Prior art date
Application number
TW101136575A
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English (en)
Chinese (zh)
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TW201322412A (zh
Inventor
理查 狄威特 柯斯伯
華爾 柔伊
畢哥辛 哈芭
法蘭克 藍布里奇
Original Assignee
英帆薩斯公司
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Priority claimed from US13/439,317 external-priority patent/US8659140B2/en
Application filed by 英帆薩斯公司 filed Critical 英帆薩斯公司
Publication of TW201322412A publication Critical patent/TW201322412A/zh
Application granted granted Critical
Publication of TWI527188B publication Critical patent/TWI527188B/zh

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Classifications

    • H10W70/09—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • H10W70/60—
    • H10W70/65—
    • H10W70/68—
    • H10W72/00—
    • H10W90/00—
    • H10W70/654—
    • H10W70/655—
    • H10W72/29—
    • H10W72/59—
    • H10W72/834—
    • H10W72/853—
    • H10W72/859—
    • H10W72/879—
    • H10W72/932—
    • H10W72/942—
    • H10W72/944—
    • H10W72/9445—
    • H10W74/00—
    • H10W74/117—
    • H10W74/15—
    • H10W90/20—
    • H10W90/22—
    • H10W90/24—
    • H10W90/26—
    • H10W90/288—
    • H10W90/297—
    • H10W90/722—
    • H10W90/724—
    • H10W90/752—
    • H10W99/00—

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Wire Bonding (AREA)
TW101136575A 2011-10-03 2012-10-03 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線 TWI527188B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161542553P 2011-10-03 2011-10-03
US201261600483P 2012-02-17 2012-02-17
US13/439,317 US8659140B2 (en) 2011-10-03 2012-04-04 Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate

Publications (2)

Publication Number Publication Date
TW201322412A TW201322412A (zh) 2013-06-01
TWI527188B true TWI527188B (zh) 2016-03-21

Family

ID=48044079

Family Applications (4)

Application Number Title Priority Date Filing Date
TW101136575A TWI527188B (zh) 2011-10-03 2012-10-03 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線
TW105118512A TW201639110A (zh) 2011-10-03 2012-10-03 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線
TW101136590A TWI520284B (zh) 2011-10-03 2012-10-03 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線
TW101136585A TWI546930B (zh) 2011-10-03 2012-10-03 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW105118512A TW201639110A (zh) 2011-10-03 2012-10-03 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線
TW101136590A TWI520284B (zh) 2011-10-03 2012-10-03 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線
TW101136585A TWI546930B (zh) 2011-10-03 2012-10-03 在無引線接合至封裝基板之總成中使用複製信號端子組以最小化短線

Country Status (5)

Country Link
EP (2) EP2764512A2 (enExample)
JP (3) JP5966009B2 (enExample)
KR (2) KR20140081856A (enExample)
TW (4) TWI527188B (enExample)
WO (3) WO2013052321A2 (enExample)

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US9768234B2 (en) * 2014-05-20 2017-09-19 Crossbar, Inc. Resistive memory architecture and devices
US10211397B1 (en) 2014-07-07 2019-02-19 Crossbar, Inc. Threshold voltage tuning for a volatile selection device
US9633724B2 (en) 2014-07-07 2017-04-25 Crossbar, Inc. Sensing a non-volatile memory device utilizing selector device holding characteristics
US10115819B2 (en) 2015-05-29 2018-10-30 Crossbar, Inc. Recessed high voltage metal oxide semiconductor transistor for RRAM cell
US9698201B2 (en) 2014-07-09 2017-07-04 Crossbar, Inc. High density selector-based non volatile memory cell and fabrication
US9685483B2 (en) 2014-07-09 2017-06-20 Crossbar, Inc. Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process
US9460788B2 (en) 2014-07-09 2016-10-04 Crossbar, Inc. Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor
US10079192B2 (en) * 2015-05-05 2018-09-18 Mediatek Inc. Semiconductor chip package assembly with improved heat dissipation performance
DE112015006937T5 (de) 2015-09-25 2018-09-06 Intel Corporation Verpackte integrierte Schaltkreisvorrichtung mit Vertiefungsstruktur
TWI615717B (zh) * 2016-01-25 2018-02-21 凌陽科技股份有限公司 高階製程晶片與低階製程晶片的資料傳輸方法以及使用其之積體電路
US20180005944A1 (en) * 2016-07-02 2018-01-04 Intel Corporation Substrate with sub-interconnect layer
US10607977B2 (en) 2017-01-20 2020-03-31 Google Llc Integrated DRAM with low-voltage swing I/O
US10096362B1 (en) 2017-03-24 2018-10-09 Crossbar, Inc. Switching block configuration bit comprising a non-volatile memory cell
JP7059970B2 (ja) * 2019-03-11 2022-04-26 株式会社デンソー 半導体装置
KR102026163B1 (ko) * 2019-07-02 2019-09-27 김복문 반도체 패키지의 배선 보정방법
TWI768294B (zh) 2019-12-31 2022-06-21 力成科技股份有限公司 封裝結構及其製造方法

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JPH08186227A (ja) * 1995-01-05 1996-07-16 Hitachi Ltd 半導体装置及び電子装置
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Also Published As

Publication number Publication date
JP2014530507A (ja) 2014-11-17
TW201322412A (zh) 2013-06-01
WO2013052320A4 (en) 2013-07-11
EP2764513B1 (en) 2017-04-19
JP5964438B2 (ja) 2016-08-03
WO2013052324A3 (en) 2013-10-31
TW201639110A (zh) 2016-11-01
KR20140081856A (ko) 2014-07-01
TWI520284B (zh) 2016-02-01
WO2013052324A2 (en) 2013-04-11
TW201324708A (zh) 2013-06-16
TW201320297A (zh) 2013-05-16
WO2013052321A3 (en) 2013-10-17
EP2764512A2 (en) 2014-08-13
JP5966009B2 (ja) 2016-08-10
JP2015503214A (ja) 2015-01-29
WO2013052320A1 (en) 2013-04-11
KR20140073559A (ko) 2014-06-16
WO2013052321A2 (en) 2013-04-11
JP2016195269A (ja) 2016-11-17
TWI546930B (zh) 2016-08-21
EP2764513A2 (en) 2014-08-13

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