TWI527119B - 用於高功率密度晶片之金屬熱接合物 - Google Patents

用於高功率密度晶片之金屬熱接合物 Download PDF

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Publication number
TWI527119B
TWI527119B TW100146953A TW100146953A TWI527119B TW I527119 B TWI527119 B TW I527119B TW 100146953 A TW100146953 A TW 100146953A TW 100146953 A TW100146953 A TW 100146953A TW I527119 B TWI527119 B TW I527119B
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Taiwan
Prior art keywords
wafer
removal device
interface material
heat removal
thermal interface
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TW100146953A
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English (en)
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TW201246386A (en
Inventor
賽夏沙伊 安基瑞帝
維丁 爵廷
詹姆斯Ａ 瓊斯
瑪格利特Ｂ 史丹
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甲骨文股份有限公司
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Publication of TW201246386A publication Critical patent/TW201246386A/zh
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Description

用於高功率密度晶片之金屬熱接合物
本文中所揭示之實施例一般而言係關於半導體裝置製造之方法。更具體而言，本文中所揭示之實施例係關於用於使用一金屬熱界面材料(TIM)使一熱移除裝置無銲劑附接至一晶片之方法。
一半導體封裝之裝配在熱管理中起一重要作用。一習用半導體封裝包含一蓋、一或多個晶粒、一晶粒互連、一基板、一基板互連及蓋附接熱界面材料(「TIM」)。
透過一晶粒附接製程將晶粒放置於基板上。通常，該晶粒附接製程涉及透過一回流製程藉由晶粒互連將一覆晶類型晶粒附接至基板。將底部填充劑施加至晶粒互連、晶粒及基板。將蓋附接TIM施加至晶粒之底部側(與晶粒互連相反之側)。將蓋放置於基板上，通常藉助蓋附接TIM與晶粒接觸。在一固化溫度下固化該半導體封裝。蓋附接TIM之結合線厚度(「BLT」)係由晶粒、基板及蓋之共面性、蓋至基板之施加、蓋附接TIM之特性及所裝配半導體封裝之固化製程來判定。
用於自一微處理器、特殊應用積體電路(「ASIC」)、積體電路(「IC」)或其他印刷電路板(「PCB」)組件進行熱移除之習用技術依賴於使用放置於熱產生裝置與一熱排出裝置之間的散熱器附接TIM。通常，一單個熱排出裝置(亦即，一散熱器)跨越熱產生裝置(亦即，一半導體封裝)上之數個組件。散熱器附接TIM之BLT判定熱排出裝置之熱路徑效能及冷卻效率。
一般而言，在一個態樣中，本發明係關於一種用於半導體封裝之裝配的方法，該方法包含藉由反向濺鍍來清潔一晶片之一表面及一熱移除裝置之一表面。該方法亦包含在一目標接合區域上方用一黏合劑層、一障壁層及一保護層順序地塗佈該晶片之該表面及該熱移除裝置之該表面。將該晶片及該熱移除裝置分別地放置至一第一載體固定件及第二載體固定件中並預加熱至一目標溫度。然後將一金屬熱界面材料預製件放置於該晶片之該表面上。將該金屬熱界面材料預製件機械地軋輥至該晶片之該表面上且使該第一載體固定件與該第二載體固定件附接在一起，使得該晶片之該表面上之該金屬熱界面材料層接合至該熱移除裝置之經塗佈表面。該方法亦包含在一回流爐中加熱該等經接合之載體固定件。
本發明之其他態樣及優點自以下說明及隨附申請專利範圍將顯而易見。
現在將參考隨附各圖詳細地闡述本發明之實施例。出於一致性目的，各圖中之相同元件可由相同參考編號標示。進一步地，在本發明之實施例之以下詳細說明中，列舉眾多特定細節以便提供對所主張標的物之一更透徹理解。然而，熟習此項技術者將明瞭，可在沒有此等特定細節之情形下實踐本文中所揭示之實施例。在其他例項中，為避免不必要地使本說明複雜化，未詳細地闡述眾所周知之特徵。
在一個態樣中，本文中所揭示之實施例通常係關於一種半導體封裝之方法。具體而言，本文中所揭示之實施例通常係關於一種採用一無銲劑製程及金屬TIM以熱耦合一晶粒/晶片與一熱移除裝置/蓋之方法。
參考圖1，展示根據一或多項實施例之半導體封裝之一方法。在ST100中，清潔一晶片之表面、一熱移除裝置之表面及金屬TIM預製件。具體而言，在一或多項實施例中，可使用丙酮、隨後使用異丙醇來清潔一晶片之表面、一熱移除裝置之表面及金屬TIM預製件。另外，可藉由在室溫下使用鹽酸來輕微地蝕刻一晶片之表面、一熱移除裝置之表面及金屬TIM預製件，隨後用去離子水沖洗。在用去離子水沖洗之後，然後用丙酮、隨後用異丙醇來沖洗一晶片之表面、一熱移除裝置之表面及金屬TIM預製件，並使用氮氣將其吹乾。熟習此項技術者將瞭解，使一晶片之表面、一熱移除裝置之表面及金屬TIM預製件去脂及將其清潔並不限於上文所闡述之步驟，且可使用此項技術中已知之其他溶劑來清潔該等表面。
舉例而言，可使用反向濺鍍來清潔晶片之表面及熱移除裝置之表面。反向濺鍍係此項技術中已知之一製程，藉以藉助在一電場中加速之氣體離子之衝擊能量而對來自一材料之一表面的原子或分子執行位錯或移除。反向濺鍍僅係表面清潔之一項實施例。可使用替代方法，舉例而言，機械清潔、化學蝕刻或電漿清潔。
在一或多項實施例中，晶片係一基於矽之晶粒封裝。在一或多項實施例中，熱移除裝置係基於銅之蓋。
在ST102中，用一黏合劑層、一障壁層及一保護層塗佈晶片表面及熱移除裝置表面中之每一者。可藉由濺鍍塗佈來沈積該黏合劑層、障壁層及保護層。熟習此項技術者將瞭解，該黏合劑層、障壁層及保護層之沈積並不限於濺鍍塗佈。舉例而言，可使用化學氣相沈積、無電極電鍍或此項技術中已知之其他技術。
黏合劑層可促進對晶片及熱移除裝置表面之進一步保護。障壁層可起作用以在TIM與晶片及熱移除裝置之表面之間提供一障壁。保護層促進TIM與晶片及熱移除裝置之表面之間的結合。
根據所主張發明之一或多項實施例，黏合劑層、一障壁層及一保護層覆蓋用於將晶片接合至熱移除裝置或蓋所定標之區域之100%。蓋側經電鍍區域可與晶粒側上之經電鍍區域相同或比其稍大以補償任何未對準。
根據本文中所揭示之一或多項實施例，黏合劑層主要由大約0.1 μm(微米)厚之一鈦層構成。熟習此項技術者將瞭解，黏合劑層材料並不限於鈦，且其厚度並不限於0.1 μm。針對結合至晶片表面及熱移除裝置表面且進一步黏結至障壁層之能力來選擇黏合之材料及厚度。舉例而言，黏合劑層亦可由Ti/W或Cr製成。熟習此項技術者將瞭解，黏合劑層之厚度以及障壁層及保護層之厚度各自構成總BLT之部分。
根據所主張發明之一或多項實施例，障壁層係由鎳及釩構成。在一或多項實施例中，障壁層可係由97%鎳及3%釩構成。在一或多項實施例中，障壁層係大約0.3 μm厚。熟習此項技術者將瞭解，障壁層材料並不限於鎳/釩，且其厚度並不限於0.3 μm。障壁層必須抑制黏合層之擴散。另外，障壁層可抑制表面上之氧化物/氮化物/碳化物之形成，且因此防止焊料變濕。障壁層亦可防止任何保護層遷移至表面及形成脆性金屬間化合物(IMC)。脆性金屬間化合物之形成可導致差的可靠性。可用於障壁層中之其他材料之實例包含但不限於：鎳、鎳(含磷)、鉑、鈀、鈷、鈷(含磷)、鎳鈷或鎳鈷(含磷)。
根據一或多項實施例，保護層主要由金構成。在一或多項實施例中，保護層係大約0.2 μm厚之一金層。熟習此項技術者將瞭解，保護層材料並不限於金，且其厚度並不限於0.2 μm。保護層可用以在將晶片附接至熱移除裝置之前保護電鍍表面以免氧化。可用於保護層中之其他材料之實例包含但不限於：鉑、銀、浸鍍銀、或一有機可銲性防腐劑(OSP)。
在ST104中，將晶片及熱移除裝置放置至圖2中所闡述之載體固定件中。在ST106中，將含有晶片及熱移除裝置之載體固定件預加熱至一目標溫度。在一或多項實施例中，將金屬TIM預製件與含有晶片及熱移除裝置之載體固定件預加熱至目標溫度。
在所主張發明之一或多項實施例中，使用覆蓋目標結合區域之90%至100%之一金屬TIM預製件。在一或多項實施例中，金屬TIM預製件係由銦構成。根據一或多項實施例，金屬TIM預製件可係自5密耳至16密耳(0.125 mm至0.300 mm)厚。
在一或多項實施例中，預加熱目標溫度可係60℃。在60℃處推斷之預加熱目標溫度之最佳化測試規定BLT之再現性及針對5密耳、8密耳及12密耳(0.125 mm、0.200 mm及0.300 mm)之銦金屬TIM預製件厚度之潤濕。
在ST108中，將金屬TIM預製件放置於目標接合區域上。另一選擇係，可在ST106之前將TIM預製件放置於目標接合區域上，使得可預加熱TIM預製件及所負載之載體固定件。在ST110中，金屬TIM預製件在晶片之表面上機械地軋輥。在一或多項實施例中，金屬TIM預製件可在熱移除裝置之表面上軋輥。在表面上機械地軋輥金屬TIM預製件可促進移除任何可能封閉之空氣泡。而且，在晶片之表面上機械地軋輥金屬TIM預製件可促進平坦化該金屬TIM。
在ST112中，載體固定件經接合以使得晶片之表面上之金屬TIM層透過目標接合區域接合至熱移除裝置之經塗佈表面。在一或多項實施例中，如關於圖2所闡述，可經由載體固定件設計將載體固定件對準並夾持至適當地方中。
在ST114中，可將經接合載體固定件放置於一回流爐中。相依於所使用之特定材料、總大小、固定件幾何形狀及所接合之不同組件之總質量而使用一定製溫度對時間量變曲線圖來執行單個所得固定件之回流。展示用於一Ti黏合層(0.1 μm厚)、一97% Ni及3% V之障壁層(0.3 μm厚)、一Au保護層(0.2 μm厚)及一In金屬TIM預製件(5密耳(0.125 mm)厚)之定製溫度對時間量變曲線圖之一實例。
在一或多項實施例中，在熱移除裝置之周圍上使用一黏合劑。可在固定件已由於使用如圖4中所例示之一溫度量變曲線圖進行加熱(ST114)之一結果而冷卻之後施加該黏合劑。另一選擇係，可在接合載體固定件(ST112)之前即刻將黏合劑施加至熱移除裝置之周圍。所使用之黏合劑可係如此項技術中已知之一市售黏合劑。
參考圖2，展示根據所主張發明之一或多項實施例之載體固定件之一實例。載體固定件系統200具有兩個載體固定件202。一個載體固定件202裝納晶片或晶粒204，且另一載體固定件202裝納熱移除裝置或蓋206。每一載體固定件202可具有對準銷208，對準銷208對應於另一載體固定件202中之對準孔210。在接合載體固定件202時，對準銷208及對準孔210促進目標接合區域之對準。每一載體固定件亦可含有用於接合載體固定件212之進一步構件。舉例而言，每一載體固定件可含有用於附接載體固定件之螺紋孔212。熟習此項技術者將瞭解，存在用於(舉例而言)使用一單獨夾持機構來接合載體固定件之其他方法。
參考圖3，展示根據所主張發明之一或多項實施例之一經裝配封裝之一實例之一示意圖。晶片/矽晶粒304通過TIM 314附接至熱移除裝置/蓋306。矽晶粒/晶片304可經由凸塊318及底部填充劑320附接至一基板316。如先前所闡述，可使用一周圍黏合劑322。相依於所期望之特定封裝，完整封裝亦可包含電容器324。
圖4中展示根據一或多項實施例在回流製程中使用之一定製溫度量變曲線對時間圖之一實例。圖4中所展示之溫度量變曲線圖可用於一Ti黏合層(0.1 μm厚)、一97% Ni及3% V之一障壁層(0.3 μm厚)、一Au保護層(0.2 μm厚)及厚度介於下界(5密耳，0.125 mm)與上界(12密耳，0.300 mm)之間的In金屬TIM預製件。該溫度量變曲線圖係根據經驗判定且相依於所使用之特定材料、總大小、固定件幾何形狀及所接合之不同組件之總質量。
本文中所揭示之實施例可提供以下優點中之一或多者。首先，本文中所揭示之實施例可提供用於半導體封裝之一金屬TIM材料之使用。與一有機TIM相反，一金屬TIM之使用可達成跨越TIM界面之一顯著較低熱電阻。而且，一金屬TIM之使用可允許容納任何非平行表面之接合，此又減小對TIM1 BLT控制之限制。而且，若必要，則一金屬TIM可提供用於一較厚BLT之一構件以減輕任何結構問題，而不會在可量測程度上影響熱效能。
而且，本文中所揭示之實施例可具備一無銲劑製程。一無銲劑製程可在總體上減少製程步驟之數目。一無銲劑製程可藉由消除所涉及組件之任何銲劑殘餘物而在總體上改良晶片/熱移除裝置之品質且進一步消除一銲劑製程中所涉及之任何清潔步驟。已知銲劑殘餘物影響導熱性，且因此，任何銲劑殘餘物之消除可改良裝置之總導熱性。本文中所闡述之方法之實施例符合危險性物質限制(ROHS)且可產生一實質上無間隙界面，從而導致更好的熱效能及結構效能。
此外，熟習此項技術者應理解，本發明不應限於各圖中所繪示及說明書中所闡述之特定實例。雖然已參照有限數目個實施例闡述本發明，但受益於本發明之熟習此項技術者將瞭解，可設想出不背離如本文中所闡述之本發明之範疇之其他實施例。因此，本發明之範疇應僅由隨附申請專利範圍限定。
200．．．載體固定件系統
202．．．載體固定件
204．．．晶片或晶粒
206．．．熱移除裝置或蓋
208．．．對準銷
210．．．對準孔
212．．．螺紋孔
304．．．晶片/矽晶粒
306．．．熱移除裝置/蓋
314．．．熱界面材料
316．．．基板
318．．．凸塊
320．．．底部填充劑
322．．．周邊黏合劑
324．．．電容器
圖1展示根據本文中所揭示之一或多項實施例之一方法之一流程圖。
圖2展示根據本文中所揭示之一或多項實施例之載體固定件之一示意圖。
圖3係根據本文中所揭示之一或多項實施例之一封裝之一示意圖。
圖4係根據本文中所揭示之一或多項實施例之一溫度加熱量變曲線圖之一圖表。
(無元件符號說明)

Claims (16)

  1. 一種半導體封裝裝配方法，其包括：藉由反向濺鍍來清潔一晶片之一表面及一熱移除裝置之一表面；在一目標接合區域上方用一黏合劑層、一障壁層及一保護層順序地塗佈該晶片之該表面及該熱移除裝置之該表面；將該晶片及該熱移除裝置分別地放置至一第一載體固定件及一第二載體固定件中；將該第一載體固定件及該第二載體固定件預加熱至一目標溫度；在預加熱之後將一金屬熱界面材料預製件放置於該晶片之該表面上；在該晶片之該表面上機械地軋輥該金屬熱界面材料；附接該第一載體固定件與該第二載體固定件以使得該晶片之該表面上之該金屬熱界面材料層接合至該熱移除裝置之該經塗佈表面；及在一回流爐中加熱該等經接合之載體固定件。
  2. 如請求項1之方法，其中該方法係無銲劑的。
  3. 如請求項1之方法，其進一步包括：在該等經接合之載體固定件已由於加熱量變曲線圖之一結果而冷卻之後將一黏合劑施加至該熱移除裝置之周圍。
  4. 如請求項1之方法，其進一步包括： 在附接該第一載體固定件與該第二之前將一黏合劑施加至該熱移除裝置之該周圍。
  5. 如請求項1之方法，其中該目標溫度係至少60℃。
  6. 如請求項1之方法，其中用該黏合劑層、該障壁層及該保護層塗佈該目標接合區域之100%。
  7. 如請求項6之方法，其中藉由濺鍍塗佈來執行該黏合劑層、該障壁層及該保護層之該塗佈。
  8. 如請求項1之方法，其中該金屬熱界面材料預製件覆蓋該目標接合區域之90%至100%。
  9. 如請求項1之方法，其進一步包括將該金屬熱界面材料預製件與該第一載體固定件及該第二載體固定件一起預加熱。
  10. 如請求項1之方法，其進一步包括在預加熱之前化學地清潔該晶片之該表面、一熱移除裝置之該表面及該金屬熱界面材料預製件。
  11. 如請求項10之方法，其中該化學清潔包括：用丙酮使該晶片之該表面、一熱移除裝置之該表面及該金屬熱界面材料預製件去脂，隨後用異丙醇沖洗該晶片之該表面、一熱移除裝置之該表面及該金屬熱界面材料預製件；用鹽酸蝕刻該晶片之該表面、一熱移除裝置之該表面及該金屬熱界面材料預製件，隨後用去離子水沖洗該晶片之該表面、一熱移除裝置之該表面及該金屬熱界面材料預製件；及 用氮氣吹乾該晶片之該表面、一熱移除裝置之該表面及該金屬熱界面材料預製件。
  12. 如請求項1之方法，其中該金屬熱界面材料包括銦。
  13. 如請求項1之方法，其中該黏合劑層係鈦且係大約0.1微米厚。
  14. 如請求項1之方法，其中該障壁層包括鎳及釩且係大約0.3微米厚。
  15. 如請求項1之方法，其中該障壁層係97%鎳及3%釩。
  16. 如請求項1之方法，其中該保護層係金且係大約0.2微米厚。
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