TWI525311B - Wiring forming apparatus, maintenance method, and wiring forming method - Google Patents
Wiring forming apparatus, maintenance method, and wiring forming method Download PDFInfo
- Publication number
- TWI525311B TWI525311B TW102137486A TW102137486A TWI525311B TW I525311 B TWI525311 B TW I525311B TW 102137486 A TW102137486 A TW 102137486A TW 102137486 A TW102137486 A TW 102137486A TW I525311 B TWI525311 B TW I525311B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- maintenance
- wiring
- wiring forming
- supply
- Prior art date
Links
- 238000012423 maintenance Methods 0.000 title claims description 244
- 238000000034 method Methods 0.000 title claims description 147
- 239000007789 gas Substances 0.000 claims description 301
- 238000004891 communication Methods 0.000 claims description 155
- 239000000463 material Substances 0.000 claims description 124
- 238000000576 coating method Methods 0.000 claims description 53
- 239000011248 coating agent Substances 0.000 claims description 50
- 238000000889 atomisation Methods 0.000 claims description 48
- 230000015572 biosynthetic process Effects 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 33
- 239000011261 inert gas Substances 0.000 claims description 13
- 239000007921 spray Substances 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 11
- 239000003595 mist Substances 0.000 description 48
- 239000002904 solvent Substances 0.000 description 41
- 238000009833 condensation Methods 0.000 description 27
- 230000005494 condensation Effects 0.000 description 27
- 239000012159 carrier gas Substances 0.000 description 25
- 230000006641 stabilisation Effects 0.000 description 22
- 238000011105 stabilization Methods 0.000 description 22
- 239000000758 substrate Substances 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 239000012530 fluid Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000002082 metal nanoparticle Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000008439 repair process Effects 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/82—Recycling of waste of electrical or electronic equipment [WEEE]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Nozzles (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Details Or Accessories Of Spraying Plant Or Apparatus (AREA)
- Special Spraying Apparatus (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012284324A JP6049067B2 (ja) | 2012-12-27 | 2012-12-27 | 配線形成装置、メンテナンス方法および配線形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201428258A TW201428258A (zh) | 2014-07-16 |
TWI525311B true TWI525311B (zh) | 2016-03-11 |
Family
ID=50997446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102137486A TWI525311B (zh) | 2012-12-27 | 2013-10-17 | Wiring forming apparatus, maintenance method, and wiring forming method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6049067B2 (ja) |
KR (1) | KR101492735B1 (ja) |
CN (1) | CN103906367B (ja) |
TW (1) | TWI525311B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017164565A1 (ko) * | 2016-03-24 | 2017-09-28 | 주식회사 프로텍 | 점성 용액 도포 장치 및 점성 용액 도포 방법 |
US20190210060A1 (en) * | 2016-07-11 | 2019-07-11 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Mist coating forming apparatus and mist coating forming method |
CN110035832B (zh) * | 2019-03-08 | 2021-04-02 | 璞真生活有限公司 | 雾化喷嘴及雾化装置 |
JP7408985B2 (ja) * | 2019-10-07 | 2024-01-09 | Toppanホールディングス株式会社 | 印刷方法、印刷装置及び印刷物 |
JP6994694B2 (ja) * | 2020-02-27 | 2022-01-14 | 信越化学工業株式会社 | 成膜用霧化装置及びこれを用いた成膜装置 |
CN111330767A (zh) * | 2020-03-16 | 2020-06-26 | Tcl华星光电技术有限公司 | 涂布机控制方法、装置和存储介质 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61242663A (ja) * | 1985-04-20 | 1986-10-28 | Toyota Motor Corp | 塗装ブ−スの排熱回収方法 |
KR20020060353A (ko) * | 2001-01-10 | 2002-07-18 | 박종섭 | 반도체 제조를 위한 코터 장비의 점착촉진제 결로 방지장치 |
JP3739287B2 (ja) | 2001-02-14 | 2006-01-25 | 東京エレクトロン株式会社 | 減圧乾燥方法及び塗布膜形成装置 |
JP4759916B2 (ja) * | 2002-12-13 | 2011-08-31 | 東京エレクトロン株式会社 | 処理装置 |
JP4607474B2 (ja) * | 2004-02-12 | 2011-01-05 | 東京エレクトロン株式会社 | 成膜装置 |
JP4150356B2 (ja) * | 2004-05-13 | 2008-09-17 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP2007038202A (ja) * | 2005-02-25 | 2007-02-15 | Ntn Corp | パターン修正方法およびパターン修正装置 |
JP4759760B2 (ja) * | 2005-07-22 | 2011-08-31 | 本多電子株式会社 | 微細霧化粒子洗浄装置 |
WO2009069210A1 (ja) | 2007-11-29 | 2009-06-04 | Kabushiki Kaisha Nihon Micronics | 霧化装置、霧化方法、配線形成装置及び配線形成方法 |
JP5338100B2 (ja) * | 2008-03-25 | 2013-11-13 | 株式会社Ihi | 塗装装置の噴射量制御方法及び装置 |
CN101314154A (zh) * | 2008-07-01 | 2008-12-03 | 攀钢集团研究院有限公司 | 一种清除雾化器堵塞物的方法 |
JP2011251231A (ja) * | 2010-06-01 | 2011-12-15 | Panasonic Corp | インクジェットヘッドおよびそれを搭載したインクジェット装置 |
JP5693104B2 (ja) * | 2010-08-31 | 2015-04-01 | キヤノン株式会社 | インクジェット記録装置 |
JP5608874B2 (ja) * | 2010-11-19 | 2014-10-15 | 本多電子株式会社 | 炭酸ガスによる変質防止超音波処理装置 |
JP5599701B2 (ja) * | 2010-12-16 | 2014-10-01 | 株式会社日本マイクロニクス | 配線形成装置 |
-
2012
- 2012-12-27 JP JP2012284324A patent/JP6049067B2/ja active Active
-
2013
- 2013-10-17 TW TW102137486A patent/TWI525311B/zh active
- 2013-10-28 KR KR20130128460A patent/KR101492735B1/ko active IP Right Grant
- 2013-12-27 CN CN201310742866.5A patent/CN103906367B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN103906367A (zh) | 2014-07-02 |
KR101492735B1 (ko) | 2015-02-11 |
JP2014127619A (ja) | 2014-07-07 |
JP6049067B2 (ja) | 2016-12-21 |
CN103906367B (zh) | 2017-01-04 |
TW201428258A (zh) | 2014-07-16 |
KR20140085294A (ko) | 2014-07-07 |
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