TWI520181B - 使用多階離子植入將圖案化光阻改質的方法及其系統 - Google Patents

使用多階離子植入將圖案化光阻改質的方法及其系統 Download PDF

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Publication number
TWI520181B
TWI520181B TW100135281A TW100135281A TWI520181B TW I520181 B TWI520181 B TW I520181B TW 100135281 A TW100135281 A TW 100135281A TW 100135281 A TW100135281 A TW 100135281A TW I520181 B TWI520181 B TW I520181B
Authority
TW
Taiwan
Prior art keywords
substrate
ion
angle
tilt angle
patterned photoresist
Prior art date
Application number
TW100135281A
Other languages
English (en)
Chinese (zh)
Other versions
TW201222640A (en
Inventor
盧多維克 葛特
約瑟Ｃ 歐爾森
派崔克Ｍ 馬汀
Original Assignee
瓦里安半導體設備公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瓦里安半導體設備公司 filed Critical 瓦里安半導體設備公司
Publication of TW201222640A publication Critical patent/TW201222640A/zh
Application granted granted Critical
Publication of TWI520181B publication Critical patent/TWI520181B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31796—Problems associated with lithography affecting resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
TW100135281A 2010-10-01 2011-09-29 使用多階離子植入將圖案化光阻改質的方法及其系統 TWI520181B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/896,046 US8133804B1 (en) 2010-10-01 2010-10-01 Method and system for modifying patterned photoresist using multi-step ion implantation

Publications (2)

Publication Number Publication Date
TW201222640A TW201222640A (en) 2012-06-01
TWI520181B true TWI520181B (zh) 2016-02-01

Family

ID=44906363

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100135281A TWI520181B (zh) 2010-10-01 2011-09-29 使用多階離子植入將圖案化光阻改質的方法及其系統

Country Status (6)

Country Link
US (1) US8133804B1 (cg-RX-API-DMAC10.html)
JP (1) JP5858496B2 (cg-RX-API-DMAC10.html)
KR (1) KR101872708B1 (cg-RX-API-DMAC10.html)
CN (1) CN103155090B (cg-RX-API-DMAC10.html)
TW (1) TWI520181B (cg-RX-API-DMAC10.html)
WO (1) WO2012044677A1 (cg-RX-API-DMAC10.html)

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US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
JP5932033B2 (ja) * 2012-06-29 2016-06-08 キヤノンアネルバ株式会社 イオンビーム処理方法およびイオンビーム処理装置
CN104345568A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(上海)有限公司 减小光刻胶图形线宽粗糙度的方法
US20160064239A1 (en) * 2014-08-28 2016-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Integrated Circuit Patterning
US9512517B2 (en) 2015-01-23 2016-12-06 Varian Semiconductor Equipment Associates, Inc. Multiple exposure treatment for processing a patterning feature
CN106298929B (zh) * 2015-06-12 2019-11-01 中芯国际集成电路制造(上海)有限公司 鳍式场效应管的形成方法
KR20170016107A (ko) * 2015-08-03 2017-02-13 삼성전자주식회사 반도체 장치 제조 방법
CN105632981A (zh) * 2016-03-19 2016-06-01 复旦大学 一种利用热处理减小微电子器件表面粗糙度的仪器
CN105789044A (zh) * 2016-03-19 2016-07-20 复旦大学 一种利用热处理减小微电子器件表面粗糙度的方法
US10658184B2 (en) 2016-12-15 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern fidelity enhancement with directional patterning technology
US10310379B2 (en) * 2017-01-13 2019-06-04 Varian Semiconductor Equipment Associates, Inc. Multiple patterning approach using ion implantation
US10147584B2 (en) * 2017-03-20 2018-12-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for decelerated ion beam with no energy contamination
KR102491093B1 (ko) 2017-08-21 2023-01-20 삼성전자주식회사 패턴 형성 방법
US10522349B2 (en) 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
US10818473B2 (en) * 2018-08-14 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Implanter calibration
JP7296010B2 (ja) * 2020-03-30 2023-06-21 株式会社日立ハイテク 荷電粒子線装置およびラフネス指標算出方法
US11635695B2 (en) 2020-06-15 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing line-end space in integrated circuit patterning
CN111755326A (zh) * 2020-06-29 2020-10-09 西安微电子技术研究所 一种解决7度角注入工艺中硅衬底起皮缺陷的方法
US12354873B2 (en) * 2020-09-30 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for multiple step directional patterning
US11854818B2 (en) * 2021-05-04 2023-12-26 Applied Materials, Inc. Angled etch for surface smoothing
US12543557B2 (en) * 2021-06-14 2026-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. System and method to reduce layout dimensions using non-perpendicular process scheme
US12198931B2 (en) * 2022-04-14 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Ion implantation method for reducing roughness of patterned resist lines
US20240194541A1 (en) * 2022-12-08 2024-06-13 Applied Materials, Inc. Two step implant to control tip-to-tip distance between trenches
US20240194540A1 (en) * 2022-12-08 2024-06-13 Applied Materials, Inc. Two step implant to improve line edge roughness and line width roughness
CN116400440B (zh) * 2023-04-13 2026-05-05 吉林大学 一种多材料面型可控毫米尺度透镜及其制备方法

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KR100272159B1 (ko) * 1993-11-24 2000-11-15 윤종용 대칭적 이온 주입 방법
JP2000235969A (ja) * 1999-02-15 2000-08-29 Sony Corp 半導体装置の製造方法
JP4060659B2 (ja) * 2002-07-24 2008-03-12 株式会社東芝 パターン形成方法、及び基板処理装置
US20040087153A1 (en) * 2002-10-31 2004-05-06 Yan Du Method of etching a silicon-containing dielectric material
JP3963846B2 (ja) * 2003-01-30 2007-08-22 東京エレクトロン株式会社 熱的処理方法および熱的処理装置
JP4213533B2 (ja) * 2003-07-17 2009-01-21 富士通株式会社 スリミング製造方法およびスリミングシステム
CN100440450C (zh) * 2003-09-30 2008-12-03 日本航空电子工业株式会社 固体表面平坦化方法及其装置
US7291563B2 (en) * 2005-08-18 2007-11-06 Micron Technology, Inc. Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate
KR101055633B1 (ko) * 2006-10-30 2011-08-09 닛뽄 고쿠 덴시 고교 가부시키가이샤 가스 클러스터 이온빔에 의한 고체 표면의 가공방법
US20100096566A1 (en) * 2008-10-20 2010-04-22 Robert Bristol Reducing Line Edge Roughness by Particle Beam Exposure

Also Published As

Publication number Publication date
KR20130138786A (ko) 2013-12-19
WO2012044677A1 (en) 2012-04-05
JP2013541845A (ja) 2013-11-14
US20120083136A1 (en) 2012-04-05
KR101872708B1 (ko) 2018-06-29
TW201222640A (en) 2012-06-01
JP5858496B2 (ja) 2016-02-10
CN103155090A (zh) 2013-06-12
US8133804B1 (en) 2012-03-13
CN103155090B (zh) 2016-02-24

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