TWI515793B - 沉積薄膜電極與薄膜堆疊的方法 - Google Patents
沉積薄膜電極與薄膜堆疊的方法 Download PDFInfo
- Publication number
- TWI515793B TWI515793B TW100136956A TW100136956A TWI515793B TW I515793 B TWI515793 B TW I515793B TW 100136956 A TW100136956 A TW 100136956A TW 100136956 A TW100136956 A TW 100136956A TW I515793 B TWI515793 B TW I515793B
- Authority
- TW
- Taiwan
- Prior art keywords
- transparent conductive
- conductive oxide
- oxide film
- gas
- sputtering
- Prior art date
Links
- 239000010408 film Substances 0.000 title claims description 138
- 239000010409 thin film Substances 0.000 title claims description 83
- 238000000151 deposition Methods 0.000 title claims description 54
- 238000000034 method Methods 0.000 title claims description 42
- 239000007789 gas Substances 0.000 claims description 115
- 238000004544 sputter deposition Methods 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 57
- 230000008021 deposition Effects 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 23
- 239000002243 precursor Substances 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims 2
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 claims 2
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 229910016027 MoTi Inorganic materials 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 8
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 229910004116 SrO 2 Inorganic materials 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UNRNJMFGIMDYKL-UHFFFAOYSA-N aluminum copper oxygen(2-) Chemical compound [O-2].[Al+3].[Cu+2] UNRNJMFGIMDYKL-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- UTDFEXXDUZZCQQ-UHFFFAOYSA-N copper;oxobismuth Chemical compound [Cu].[Bi]=O UTDFEXXDUZZCQQ-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- -1 deposition time Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10189508A EP2447999A1 (en) | 2010-10-29 | 2010-10-29 | Method for depositing a thin film electrode and thin film stack |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201234481A TW201234481A (en) | 2012-08-16 |
| TWI515793B true TWI515793B (zh) | 2016-01-01 |
Family
ID=43836679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100136956A TWI515793B (zh) | 2010-10-29 | 2011-10-12 | 沉積薄膜電極與薄膜堆疊的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8361897B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2447999A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5615442B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101760839B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN103201839B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI515793B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2012055728A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9379247B2 (en) * | 2012-06-28 | 2016-06-28 | Cbrite Inc. | High mobility stabile metal oxide TFT |
| KR20140104792A (ko) * | 2013-02-21 | 2014-08-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| KR102044667B1 (ko) * | 2013-05-28 | 2019-11-14 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법 |
| US9806179B2 (en) * | 2016-01-14 | 2017-10-31 | Hon Hai Precision Industry Co., Ltd. | Method for fabricating conducting structure and thin film transistor array panel |
| KR101829970B1 (ko) | 2016-02-01 | 2018-02-19 | 연세대학교 산학협력단 | 산화물 박막 트랜지스터 및 그 제조 방법 |
| CN114630920A (zh) * | 2020-05-25 | 2022-06-14 | 应用材料公司 | 用于产生层堆叠物的方法和用于制造图案化层堆叠物的方法 |
| CN113233870B (zh) * | 2021-04-25 | 2023-01-13 | 先导薄膜材料（广东）有限公司 | 一种掺杂氧化镉靶材及其制备方法与应用 |
| KR102762721B1 (ko) * | 2022-05-02 | 2025-02-04 | 동의대학교 산학협력단 | 금속층의 상변태를 이용한 반투명 면상 발열체의 제조방법 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0197315A (ja) * | 1987-10-08 | 1989-04-14 | Toshiba Glass Co Ltd | 酸化錫導電膜の形成方法 |
| ES2185454B1 (es) | 2000-08-28 | 2004-05-01 | Centro De Investigaciones Energeticas, Medioambientales Y Tecnologicas (C.I.E.M.A.T.) | Metodo de obtencion de oxidos conductores electricos y transparentes mediante pulverizacion catodica. |
| US8138364B2 (en) | 2001-08-27 | 2012-03-20 | Northwestern University | Transparent conducting oxide thin films and related devices |
| US8038857B2 (en) * | 2004-03-09 | 2011-10-18 | Idemitsu Kosan Co., Ltd. | Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes |
| CN100593244C (zh) | 2004-03-19 | 2010-03-03 | 株式会社半导体能源研究所 | 形成图案的方法、薄膜晶体管、显示设备及其制造方法 |
| EP1624333B1 (en) | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
| JP5110803B2 (ja) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
| JP4886476B2 (ja) * | 2006-11-13 | 2012-02-29 | パナソニック電工株式会社 | 有機エレクトロルミネッセンス素子 |
| US8747630B2 (en) | 2007-01-16 | 2014-06-10 | Alliance For Sustainable Energy, Llc | Transparent conducting oxides and production thereof |
| TWI371112B (en) | 2007-10-02 | 2012-08-21 | Univ Chang Gung | Solar energy photoelectric conversion apparatus |
| KR101455304B1 (ko) * | 2007-10-05 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법 |
| CN101980986B (zh) | 2007-11-02 | 2016-04-27 | 北美Agc平板玻璃公司 | 用于薄膜光伏应用的透明导电氧化物涂层及其生产方法 |
| KR20090095026A (ko) * | 2008-03-04 | 2009-09-09 | 삼성전자주식회사 | 표시 장치 제조 방법 |
| US8129718B2 (en) * | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
| TWI485851B (zh) * | 2009-03-30 | 2015-05-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| US8043981B2 (en) * | 2009-04-21 | 2011-10-25 | Applied Materials, Inc. | Dual frequency low temperature oxidation of a semiconductor device |
| CN101993032B (zh) * | 2009-08-14 | 2013-03-27 | 京东方科技集团股份有限公司 | 微结构薄膜图形和tft-lcd阵列基板制造方法 |
| WO2011039853A1 (ja) * | 2009-09-30 | 2011-04-07 | キヤノン株式会社 | 薄膜トランジスタ |
-
2010
- 2010-10-29 EP EP10189508A patent/EP2447999A1/en not_active Withdrawn
- 2010-11-04 US US12/939,855 patent/US8361897B2/en active Active
-
2011
- 2011-10-12 TW TW100136956A patent/TWI515793B/zh not_active IP Right Cessation
- 2011-10-18 JP JP2013535360A patent/JP5615442B2/ja active Active
- 2011-10-18 CN CN201180051782.6A patent/CN103201839B/zh active Active
- 2011-10-18 WO PCT/EP2011/068191 patent/WO2012055728A1/en not_active Ceased
- 2011-10-18 KR KR1020137013633A patent/KR101760839B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103201839B (zh) | 2016-11-16 |
| US20120104616A1 (en) | 2012-05-03 |
| EP2447999A1 (en) | 2012-05-02 |
| KR101760839B1 (ko) | 2017-08-04 |
| JP2014502038A (ja) | 2014-01-23 |
| KR20140074861A (ko) | 2014-06-18 |
| US8361897B2 (en) | 2013-01-29 |
| TW201234481A (en) | 2012-08-16 |
| JP5615442B2 (ja) | 2014-10-29 |
| WO2012055728A1 (en) | 2012-05-03 |
| CN103201839A (zh) | 2013-07-10 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |