TWI515341B - 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 - Google Patents

包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 Download PDF

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Publication number
TWI515341B
TWI515341B TW099125505A TW99125505A TWI515341B TW I515341 B TWI515341 B TW I515341B TW 099125505 A TW099125505 A TW 099125505A TW 99125505 A TW99125505 A TW 99125505A TW I515341 B TWI515341 B TW I515341B
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TW
Taiwan
Prior art keywords
alkylene oxide
composition
copper
oxide
group
Prior art date
Application number
TW099125505A
Other languages
English (en)
Chinese (zh)
Other versions
TW201111558A (en
Inventor
康尼利亞 羅傑
羅曼 班尼狄克 瑞索
迪爾特 梅爾
亞力山佐 賀格
夏落特 伊尼特
Original Assignee
巴地斯顏料化工廠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴地斯顏料化工廠 filed Critical 巴地斯顏料化工廠
Publication of TW201111558A publication Critical patent/TW201111558A/zh
Application granted granted Critical
Publication of TWI515341B publication Critical patent/TWI515341B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Paints Or Removers (AREA)
TW099125505A 2009-07-30 2010-07-30 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 TWI515341B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30

Publications (2)

Publication Number Publication Date
TW201111558A TW201111558A (en) 2011-04-01
TWI515341B true TWI515341B (zh) 2016-01-01

Family

ID=42733749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099125505A TWI515341B (zh) 2009-07-30 2010-07-30 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物

Country Status (11)

Country Link
US (1) US9617647B2 (cg-RX-API-DMAC10.html)
EP (1) EP2459779B1 (cg-RX-API-DMAC10.html)
JP (2) JP5775077B2 (cg-RX-API-DMAC10.html)
KR (1) KR101738708B1 (cg-RX-API-DMAC10.html)
CN (1) CN102471910B (cg-RX-API-DMAC10.html)
IL (1) IL217234A (cg-RX-API-DMAC10.html)
MY (1) MY160150A (cg-RX-API-DMAC10.html)
RU (1) RU2539895C2 (cg-RX-API-DMAC10.html)
SG (2) SG10201404301WA (cg-RX-API-DMAC10.html)
TW (1) TWI515341B (cg-RX-API-DMAC10.html)
WO (1) WO2011012475A1 (cg-RX-API-DMAC10.html)

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EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
JP6411354B2 (ja) 2012-11-09 2018-10-24 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 平坦化剤を含む金属電気めっきのための組成物
EP3141633B1 (en) 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
CN120776404A (zh) * 2017-11-20 2025-10-14 巴斯夫欧洲公司 用于电镀钴的包含流平剂的组合物
ES2881029T3 (es) * 2018-01-09 2021-11-26 Atotech Deutschland Gmbh Aditivo de ureileno, su uso y un método para su preparación
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
IL296980A (en) 2020-04-03 2022-12-01 Basf Se The composition for electrodeposition of copper bumps containing a polyaminoamide compensator
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JP7781850B2 (ja) 2020-07-13 2025-12-08 ビーエーエスエフ ソシエタス・ヨーロピア コバルトシード上の銅電気メッキ用組成物
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
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CN116284745B (zh) * 2023-02-21 2026-06-30 深圳市励高表面处理材料有限公司 一种半导体镀铜填孔剂及其制备方法与应用
KR20260046113A (ko) 2023-08-03 2026-04-06 바스프 에스이 금속 시드 상의 구리 전기도금을 위한 조성물
WO2026003954A1 (ja) * 2024-06-25 2026-01-02 Ykk株式会社 硫酸銅めっき液
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WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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Also Published As

Publication number Publication date
SG10201404301WA (en) 2014-09-26
RU2012107130A (ru) 2013-09-10
RU2539895C2 (ru) 2015-01-27
JP5775077B2 (ja) 2015-09-09
IL217234A (en) 2016-05-31
SG177418A1 (en) 2012-02-28
US20120118750A1 (en) 2012-05-17
US9617647B2 (en) 2017-04-11
IL217234A0 (en) 2012-02-29
MY160150A (en) 2017-02-28
WO2011012475A1 (en) 2011-02-03
TW201111558A (en) 2011-04-01
CN102471910B (zh) 2016-01-20
JP6117284B2 (ja) 2017-04-19
EP2459779A1 (en) 2012-06-06
KR101738708B1 (ko) 2017-05-22
CN102471910A (zh) 2012-05-23
KR20120049237A (ko) 2012-05-16
JP2013500395A (ja) 2013-01-07
JP2016029210A (ja) 2016-03-03
EP2459779B1 (en) 2015-09-09

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