MY160150A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature fillingInfo
- Publication number
- MY160150A MY160150A MYPI2012000018A MYPI2012000018A MY160150A MY 160150 A MY160150 A MY 160150A MY PI2012000018 A MYPI2012000018 A MY PI2012000018A MY PI2012000018 A MYPI2012000018 A MY PI2012000018A MY 160150 A MY160150 A MY 160150A
- Authority
- MY
- Malaysia
- Prior art keywords
- alkylene oxide
- composition
- metal plating
- suppressing agent
- void free
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
- C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polyethers (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22980909P | 2009-07-30 | 2009-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY160150A true MY160150A (en) | 2017-02-28 |
Family
ID=42733749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2012000018A MY160150A (en) | 2009-07-30 | 2010-07-19 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9617647B2 (cg-RX-API-DMAC10.html) |
| EP (1) | EP2459779B1 (cg-RX-API-DMAC10.html) |
| JP (2) | JP5775077B2 (cg-RX-API-DMAC10.html) |
| KR (1) | KR101738708B1 (cg-RX-API-DMAC10.html) |
| CN (1) | CN102471910B (cg-RX-API-DMAC10.html) |
| IL (1) | IL217234A (cg-RX-API-DMAC10.html) |
| MY (1) | MY160150A (cg-RX-API-DMAC10.html) |
| RU (1) | RU2539895C2 (cg-RX-API-DMAC10.html) |
| SG (2) | SG10201404301WA (cg-RX-API-DMAC10.html) |
| TW (1) | TWI515341B (cg-RX-API-DMAC10.html) |
| WO (1) | WO2011012475A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2655457B1 (en) | 2010-12-21 | 2019-04-10 | Basf Se | Composition for metal electroplating comprising leveling agent |
| RU2013158459A (ru) | 2011-06-01 | 2015-07-20 | Басф Се | Композиция для электроосаждения металла, содержащая добавку для заполнения снизу вверх переходных отверстий в кремнии и межсоединительных элементов |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| US20130133243A1 (en) | 2011-06-28 | 2013-05-30 | Basf Se | Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants |
| JP6411354B2 (ja) | 2012-11-09 | 2018-10-24 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 平坦化剤を含む金属電気めっきのための組成物 |
| EP3141633B1 (en) | 2015-09-10 | 2018-05-02 | ATOTECH Deutschland GmbH | Copper plating bath composition |
| KR102457310B1 (ko) * | 2016-12-20 | 2022-10-20 | 바스프 에스이 | 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 |
| CN107604414B (zh) * | 2017-08-22 | 2020-03-24 | 珠海市奥美伦精细化工有限公司 | 一种铝及铝合金阳极氧化高温无镍封闭剂 |
| EP3679179B1 (en) | 2017-09-04 | 2023-10-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| CN120776404A (zh) * | 2017-11-20 | 2025-10-14 | 巴斯夫欧洲公司 | 用于电镀钴的包含流平剂的组合物 |
| ES2881029T3 (es) * | 2018-01-09 | 2021-11-26 | Atotech Deutschland Gmbh | Aditivo de ureileno, su uso y un método para su preparación |
| WO2021058334A1 (en) | 2019-09-27 | 2021-04-01 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| EP4034697A1 (en) | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| IL296980A (en) | 2020-04-03 | 2022-12-01 | Basf Se | The composition for electrodeposition of copper bumps containing a polyaminoamide compensator |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| JP7781850B2 (ja) | 2020-07-13 | 2025-12-08 | ビーエーエスエフ ソシエタス・ヨーロピア | コバルトシード上の銅電気メッキ用組成物 |
| EP4409058B1 (en) | 2021-10-01 | 2025-11-05 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| EP4551742A1 (en) | 2022-07-07 | 2025-05-14 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| KR20250124348A (ko) | 2022-12-19 | 2025-08-19 | 바스프 에스이 | 구리 나노트윈 전착용 조성물 |
| CN116284745B (zh) * | 2023-02-21 | 2026-06-30 | 深圳市励高表面处理材料有限公司 | 一种半导体镀铜填孔剂及其制备方法与应用 |
| KR20260046113A (ko) | 2023-08-03 | 2026-04-06 | 바스프 에스이 | 금속 시드 상의 구리 전기도금을 위한 조성물 |
| WO2026003954A1 (ja) * | 2024-06-25 | 2026-01-02 | Ykk株式会社 | 硫酸銅めっき液 |
| JP7787368B1 (ja) * | 2024-06-25 | 2025-12-16 | Ykk株式会社 | 硫酸銅めっき液 |
| WO2026037751A1 (en) | 2024-08-16 | 2026-02-19 | Basf Se | Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB602591A (en) * | 1945-02-12 | 1948-05-31 | Du Pont | Improvements in or relating to the electro-deposition of metals |
| GB1221688A (en) * | 1968-03-09 | 1971-02-03 | Geigy Uk Ltd | Tin electroplating bath and process |
| GB2064585B (en) * | 1979-11-19 | 1983-11-09 | Enthone | Acid zinc electro plating solutions and methods utilizing ethoxylated/propoxylated polyhydric alcohols |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| SU1035097A1 (ru) * | 1981-07-20 | 1983-08-15 | Днепропетровский Ордена Трудового Красного Знамени Государственный Университет Им.300-Летия Воссоединения Украины С Россией | Электролит меднени |
| US4430490A (en) * | 1982-08-10 | 1984-02-07 | Ppg Industries, Inc. | Polyether polyols and their method of preparation |
| JPS59182986A (ja) * | 1983-04-01 | 1984-10-17 | Keigo Obata | スズ、鉛及びすず−鉛合金メツキ浴 |
| JPS62182295A (ja) * | 1985-08-07 | 1987-08-10 | Daiwa Tokushu Kk | 銅メツキ浴組成物 |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| JPH0641581A (ja) * | 1992-07-23 | 1994-02-15 | Seiko Epson Corp | コンタクトレンズ用親水性洗浄剤 |
| JP3244866B2 (ja) * | 1993-05-25 | 2002-01-07 | 株式会社大和化成研究所 | すず−鉛合金めっき浴 |
| EP1197587B1 (en) | 2000-10-13 | 2006-09-20 | Shipley Co. L.L.C. | Seed layer repair and electroplating bath |
| US6776893B1 (en) | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
| EP1422320A1 (en) * | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| WO2004050559A1 (ja) | 2002-12-03 | 2004-06-17 | Asahi Kasei Kabushiki Kaisha | 酸化銅超微粒子 |
| US20050133376A1 (en) * | 2003-12-19 | 2005-06-23 | Opaskar Vincent C. | Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom |
| US20050199507A1 (en) * | 2004-03-09 | 2005-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical structures and compositions of ECP additives to reduce pit defects |
| EP1819848A1 (en) * | 2004-11-29 | 2007-08-22 | Technic, Incorporated | Near neutral ph tin electroplating solution |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2282682C1 (ru) * | 2005-04-28 | 2006-08-27 | Российский химико-технологический университет им. Д.И. Менделеева | Электролит и способ меднения |
| US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
| JP2008266722A (ja) * | 2007-04-20 | 2008-11-06 | Ebara Udylite Kk | パルス銅めっき浴用添加剤およびこれを用いたパルス銅めっき浴 |
| WO2011012462A2 (en) * | 2009-07-30 | 2011-02-03 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
-
2010
- 2010-07-19 JP JP2012522097A patent/JP5775077B2/ja active Active
- 2010-07-19 MY MYPI2012000018A patent/MY160150A/en unknown
- 2010-07-19 EP EP10734120.8A patent/EP2459779B1/en active Active
- 2010-07-19 SG SG10201404301WA patent/SG10201404301WA/en unknown
- 2010-07-19 CN CN201080033648.9A patent/CN102471910B/zh active Active
- 2010-07-19 WO PCT/EP2010/060375 patent/WO2011012475A1/en not_active Ceased
- 2010-07-19 SG SG2011097185A patent/SG177418A1/en unknown
- 2010-07-19 US US13/384,732 patent/US9617647B2/en active Active
- 2010-07-19 RU RU2012107130/02A patent/RU2539895C2/ru not_active IP Right Cessation
- 2010-07-19 KR KR1020127001758A patent/KR101738708B1/ko active Active
- 2010-07-30 TW TW099125505A patent/TWI515341B/zh active
-
2011
- 2011-12-27 IL IL217234A patent/IL217234A/en active IP Right Grant
-
2015
- 2015-07-01 JP JP2015132392A patent/JP6117284B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| SG10201404301WA (en) | 2014-09-26 |
| RU2012107130A (ru) | 2013-09-10 |
| RU2539895C2 (ru) | 2015-01-27 |
| TWI515341B (zh) | 2016-01-01 |
| JP5775077B2 (ja) | 2015-09-09 |
| IL217234A (en) | 2016-05-31 |
| SG177418A1 (en) | 2012-02-28 |
| US20120118750A1 (en) | 2012-05-17 |
| US9617647B2 (en) | 2017-04-11 |
| IL217234A0 (en) | 2012-02-29 |
| WO2011012475A1 (en) | 2011-02-03 |
| TW201111558A (en) | 2011-04-01 |
| CN102471910B (zh) | 2016-01-20 |
| JP6117284B2 (ja) | 2017-04-19 |
| EP2459779A1 (en) | 2012-06-06 |
| KR101738708B1 (ko) | 2017-05-22 |
| CN102471910A (zh) | 2012-05-23 |
| KR20120049237A (ko) | 2012-05-16 |
| JP2013500395A (ja) | 2013-01-07 |
| JP2016029210A (ja) | 2016-03-03 |
| EP2459779B1 (en) | 2015-09-09 |
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