KR101738708B1 - 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 - Google Patents

서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 Download PDF

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KR101738708B1
KR101738708B1 KR1020127001758A KR20127001758A KR101738708B1 KR 101738708 B1 KR101738708 B1 KR 101738708B1 KR 1020127001758 A KR1020127001758 A KR 1020127001758A KR 20127001758 A KR20127001758 A KR 20127001758A KR 101738708 B1 KR101738708 B1 KR 101738708B1
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South Korea
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copper
composition
alkylene oxide
substrate
oxide
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KR20120049237A (ko
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코르넬리아 뢰거-괴페르트
로만 베네딕트 레테르
디터 마이어
알렉산드라 하크
샤를로테 엠네트
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Paints Or Removers (AREA)
KR1020127001758A 2009-07-30 2010-07-19 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 Active KR101738708B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30
US61/229,809 2009-07-30
PCT/EP2010/060375 WO2011012475A1 (en) 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20120049237A KR20120049237A (ko) 2012-05-16
KR101738708B1 true KR101738708B1 (ko) 2017-05-22

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KR1020127001758A Active KR101738708B1 (ko) 2009-07-30 2010-07-19 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물

Country Status (11)

Country Link
US (1) US9617647B2 (cg-RX-API-DMAC10.html)
EP (1) EP2459779B1 (cg-RX-API-DMAC10.html)
JP (2) JP5775077B2 (cg-RX-API-DMAC10.html)
KR (1) KR101738708B1 (cg-RX-API-DMAC10.html)
CN (1) CN102471910B (cg-RX-API-DMAC10.html)
IL (1) IL217234A (cg-RX-API-DMAC10.html)
MY (1) MY160150A (cg-RX-API-DMAC10.html)
RU (1) RU2539895C2 (cg-RX-API-DMAC10.html)
SG (2) SG10201404301WA (cg-RX-API-DMAC10.html)
TW (1) TWI515341B (cg-RX-API-DMAC10.html)
WO (1) WO2011012475A1 (cg-RX-API-DMAC10.html)

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EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
RU2013158459A (ru) 2011-06-01 2015-07-20 Басф Се Композиция для электроосаждения металла, содержащая добавку для заполнения снизу вверх переходных отверстий в кремнии и межсоединительных элементов
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
JP6411354B2 (ja) 2012-11-09 2018-10-24 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 平坦化剤を含む金属電気めっきのための組成物
EP3141633B1 (en) 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
CN120776404A (zh) * 2017-11-20 2025-10-14 巴斯夫欧洲公司 用于电镀钴的包含流平剂的组合物
ES2881029T3 (es) * 2018-01-09 2021-11-26 Atotech Deutschland Gmbh Aditivo de ureileno, su uso y un método para su preparación
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
IL296980A (en) 2020-04-03 2022-12-01 Basf Se The composition for electrodeposition of copper bumps containing a polyaminoamide compensator
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
JP7781850B2 (ja) 2020-07-13 2025-12-08 ビーエーエスエフ ソシエタス・ヨーロピア コバルトシード上の銅電気メッキ用組成物
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
CN116284745B (zh) * 2023-02-21 2026-06-30 深圳市励高表面处理材料有限公司 一种半导体镀铜填孔剂及其制备方法与应用
KR20260046113A (ko) 2023-08-03 2026-04-06 바스프 에스이 금속 시드 상의 구리 전기도금을 위한 조성물
WO2026003954A1 (ja) * 2024-06-25 2026-01-02 Ykk株式会社 硫酸銅めっき液
JP7787368B1 (ja) * 2024-06-25 2025-12-16 Ykk株式会社 硫酸銅めっき液
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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US20060098065A1 (en) 2002-12-03 2006-05-11 Mutsuhiro Maruyama Copper oxide ultrafine particle
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WO2002103751A2 (en) 2000-11-20 2002-12-27 Enthone Inc. Electroplating chemistry for the cu filling of submicron features of vlsi/ulsi interconnect
US20060098065A1 (en) 2002-12-03 2006-05-11 Mutsuhiro Maruyama Copper oxide ultrafine particle
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method

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Publication number Publication date
SG10201404301WA (en) 2014-09-26
RU2012107130A (ru) 2013-09-10
RU2539895C2 (ru) 2015-01-27
TWI515341B (zh) 2016-01-01
JP5775077B2 (ja) 2015-09-09
IL217234A (en) 2016-05-31
SG177418A1 (en) 2012-02-28
US20120118750A1 (en) 2012-05-17
US9617647B2 (en) 2017-04-11
IL217234A0 (en) 2012-02-29
MY160150A (en) 2017-02-28
WO2011012475A1 (en) 2011-02-03
TW201111558A (en) 2011-04-01
CN102471910B (zh) 2016-01-20
JP6117284B2 (ja) 2017-04-19
EP2459779A1 (en) 2012-06-06
CN102471910A (zh) 2012-05-23
KR20120049237A (ko) 2012-05-16
JP2013500395A (ja) 2013-01-07
JP2016029210A (ja) 2016-03-03
EP2459779B1 (en) 2015-09-09

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