TWI515339B - 用於銅後化學機械平坦化之含水清洗組合物 - Google Patents

用於銅後化學機械平坦化之含水清洗組合物 Download PDF

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Publication number
TWI515339B
TWI515339B TW103109382A TW103109382A TWI515339B TW I515339 B TWI515339 B TW I515339B TW 103109382 A TW103109382 A TW 103109382A TW 103109382 A TW103109382 A TW 103109382A TW I515339 B TWI515339 B TW I515339B
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Taiwan
Prior art keywords
acid
ppm
cleaning composition
concentration
aqueous cleaning
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TW103109382A
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English (en)
Chinese (zh)
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TW201435145A (zh
Inventor
柯政遠
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卡博特微電子公司
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/361—Phosphonates, phosphinates or phosphonites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/364—Organic compounds containing phosphorus containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/365—Organic compounds containing phosphorus containing carboxyl groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW103109382A 2013-03-15 2014-03-14 用於銅後化學機械平坦化之含水清洗組合物 TWI515339B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361793073P 2013-03-15 2013-03-15

Publications (2)

Publication Number Publication Date
TW201435145A TW201435145A (zh) 2014-09-16
TWI515339B true TWI515339B (zh) 2016-01-01

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Family Applications (1)

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TW103109382A TWI515339B (zh) 2013-03-15 2014-03-14 用於銅後化學機械平坦化之含水清洗組合物

Country Status (7)

Country Link
US (1) US20140264151A1 (enExample)
EP (1) EP2971248B1 (enExample)
JP (1) JP6751015B2 (enExample)
KR (1) KR102237745B1 (enExample)
CN (1) CN105264117B (enExample)
TW (1) TWI515339B (enExample)
WO (1) WO2014151361A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106661518B (zh) * 2014-07-18 2020-01-14 嘉柏微电子材料股份公司 在cmp后使用的清洁组合物及其相关方法
TWI726859B (zh) * 2015-01-05 2021-05-11 美商恩特葛瑞斯股份有限公司 後化學機械拋光配方及使用之方法
US9490142B2 (en) * 2015-04-09 2016-11-08 Qualsig Inc. Cu-low K cleaning and protection compositions
US20160304815A1 (en) * 2015-04-20 2016-10-20 Intermolecular, Inc. Methods and chemical solutions for cleaning photomasks using quaternary ammonium hydroxides
CN110023477A (zh) * 2016-11-25 2019-07-16 恩特格里斯公司 用于去除蚀刻后残留物的清洁组合物
CN119286600A (zh) * 2017-01-18 2025-01-10 恩特格里斯公司 用于从表面去除氧化铈粒子的组合物和方法
TWI703210B (zh) * 2017-04-11 2020-09-01 美商恩特葛瑞斯股份有限公司 化學機械研磨後調配物及使用方法
US11446708B2 (en) * 2017-12-04 2022-09-20 Entegris, Inc. Compositions and methods for reducing interaction between abrasive particles and a cleaning brush
US11639464B2 (en) * 2018-12-07 2023-05-02 Halliburton Energy Services, Inc. Controlling the formation of polymer-metal complexes in wellbore operations
JP7544027B2 (ja) * 2019-02-19 2024-09-03 三菱ケミカル株式会社 セリウム化合物除去用洗浄液、洗浄方法及び半導体ウェハの製造方法
WO2021131451A1 (ja) * 2019-12-26 2021-07-01 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄方法、洗浄液
WO2021131452A1 (ja) * 2019-12-26 2021-07-01 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液、洗浄方法
US11584900B2 (en) 2020-05-14 2023-02-21 Corrosion Innovations, Llc Method for removing one or more of: coating, corrosion, salt from a surface
CN112663065A (zh) * 2020-11-24 2021-04-16 苏州美源达环保科技股份有限公司 一种碱性蚀刻液的再生循环利用方法
CN113774390B (zh) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
JP7756561B2 (ja) 2021-12-28 2025-10-20 東京応化工業株式会社 洗浄液、及び基板の洗浄方法
EP4709519A1 (en) * 2023-05-11 2026-03-18 CCI North America Corporation Pre-treated ion exchange resin for alternative energy power source heat transfer systems with low conductivity coolant requirements
KR20260020954A (ko) * 2023-06-05 2026-02-12 다우 글로벌 테크놀로지스 엘엘씨 N-치환 피페라진을 사용한 세정 조성물
WO2026164087A1 (ja) * 2025-01-30 2026-08-06 Jsr株式会社 半導体洗浄用組成物および洗浄方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2119722A1 (en) * 1993-03-17 1994-09-18 Edward A. Rodzewich Non-toxic organic corrosion inhibitor
US5733270A (en) * 1995-06-07 1998-03-31 Baxter International Inc. Method and device for precise release of an antimicrobial agent
US5716546A (en) * 1996-10-23 1998-02-10 Osram Sylvania Inc. Reduction of lag in yttrium tantalate x-ray phosphors
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US5756218A (en) * 1997-01-09 1998-05-26 Sandia Corporation Corrosion protective coating for metallic materials
AU2962400A (en) * 1999-02-05 2000-08-25 Betzdearborn Inc. Cleaner composition and method of use thereof
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US20100009540A1 (en) * 2002-09-25 2010-01-14 Asahi Glass Company Limited Polishing compound, its production process and polishing method
JPWO2004100242A1 (ja) * 2003-05-09 2006-07-13 三洋化成工業株式会社 Ｃｍｐプロセス用研磨液及び研磨方法
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050170650A1 (en) * 2004-01-26 2005-08-04 Hongbin Fang Electroless palladium nitrate activation prior to cobalt-alloy deposition
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20090011972A1 (en) * 2004-12-28 2009-01-08 Sanyo Chemical Industries, Ltd. Surfactant for Fine-Bubble Formation
TWI282363B (en) 2005-05-19 2007-06-11 Epoch Material Co Ltd Aqueous cleaning composition for semiconductor copper processing
WO2007070715A2 (en) * 2005-12-15 2007-06-21 Ashland Licensing And Intellectual Property Llc Cleaning and polishing composition for metallic surfaces
CN101410503A (zh) * 2006-03-27 2009-04-15 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的改良碱性溶液
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US7531431B2 (en) * 2006-05-19 2009-05-12 Cree, Inc. Methods for reducing contamination of semiconductor devices and materials during wafer processing
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US20080241276A1 (en) * 2006-10-31 2008-10-02 The Procter & Gamble Company Portable bio-chemical decontaminant system and method of using the same
US9255227B2 (en) * 2006-12-13 2016-02-09 Haldor Topsoe A/S Process for the synthesis of hydrocarbon constituents of gasoline
US8076155B2 (en) * 2007-06-05 2011-12-13 Ecolab Usa Inc. Wide range kinetic determination of peracid and/or peroxide concentrations
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US7919446B1 (en) * 2007-12-28 2011-04-05 Intermolecular, Inc. Post-CMP cleaning compositions and methods of using same
JP2009194049A (ja) * 2008-02-13 2009-08-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2009212383A (ja) * 2008-03-05 2009-09-17 Sanyo Chem Ind Ltd 洗浄剤組成物及び半導体基板の製造方法
US20100006511A1 (en) * 2008-07-11 2010-01-14 Walterick Jr Gerald C Treatment additives and methods for treating an aqueous medium
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
KR20110127244A (ko) * 2009-03-11 2011-11-24 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 상의 잔류물을 제거하기 위한 세정 조성물
US8557125B2 (en) * 2010-06-07 2013-10-15 General Electric Company Treatment additives, methods for making and methods for clarifying aqueous media
EP2585490B1 (en) * 2010-08-02 2014-07-02 Dow Global Technologies LLC Compositions and method of inhibiting polymerization of vinyl-aryl monomers
JPWO2012073909A1 (ja) * 2010-11-29 2014-05-19 和光純薬工業株式会社 銅配線用基板洗浄剤及び銅配線半導体基板の洗浄方法
US9714374B2 (en) * 2011-07-15 2017-07-25 Exxonmobil Upstream Research Company Protecting a fluid stream from fouling
DE112012004431B4 (de) * 2011-10-24 2025-12-31 Fujimi Incorporated Zusammensetzung zu Polierzwecken, Polierverfahren unter Verwendung derselben und Verfahren zur Herstellung eines Substrates

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Publication number Publication date
JP6751015B2 (ja) 2020-09-02
WO2014151361A1 (en) 2014-09-25
KR102237745B1 (ko) 2021-04-09
CN105264117B (zh) 2018-11-27
EP2971248A4 (en) 2016-12-14
EP2971248B1 (en) 2021-10-13
EP2971248A1 (en) 2016-01-20
TW201435145A (zh) 2014-09-16
JP2016519423A (ja) 2016-06-30
KR20150127278A (ko) 2015-11-16
US20140264151A1 (en) 2014-09-18
CN105264117A (zh) 2016-01-20

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