TWI513804B - 電子材料用研磨液、研磨方法及電子材料的製造方法 - Google Patents

電子材料用研磨液、研磨方法及電子材料的製造方法 Download PDF

Info

Publication number
TWI513804B
TWI513804B TW101123153A TW101123153A TWI513804B TW I513804 B TWI513804 B TW I513804B TW 101123153 A TW101123153 A TW 101123153A TW 101123153 A TW101123153 A TW 101123153A TW I513804 B TWI513804 B TW I513804B
Authority
TW
Taiwan
Prior art keywords
group
acid
salt
polishing
electronic material
Prior art date
Application number
TW101123153A
Other languages
English (en)
Chinese (zh)
Other versions
TW201307543A (zh
Inventor
Shunichiro Yamaguchi
Original Assignee
Sanyo Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Chemical Ind Ltd filed Critical Sanyo Chemical Ind Ltd
Publication of TW201307543A publication Critical patent/TW201307543A/zh
Application granted granted Critical
Publication of TWI513804B publication Critical patent/TWI513804B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW101123153A 2011-06-29 2012-06-28 電子材料用研磨液、研磨方法及電子材料的製造方法 TWI513804B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2011144241 2011-06-29
JP2011146481 2011-06-30
JP2011146486 2011-06-30
JP2011149228 2011-07-05
JP2011149229 2011-07-05
JP2011149227 2011-07-05

Publications (2)

Publication Number Publication Date
TW201307543A TW201307543A (zh) 2013-02-16
TWI513804B true TWI513804B (zh) 2015-12-21

Family

ID=47424171

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101123153A TWI513804B (zh) 2011-06-29 2012-06-28 電子材料用研磨液、研磨方法及電子材料的製造方法

Country Status (4)

Country Link
CN (1) CN103619982B (fr)
MY (1) MY163071A (fr)
TW (1) TWI513804B (fr)
WO (1) WO2013002281A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6408236B2 (ja) * 2014-04-03 2018-10-17 昭和電工株式会社 研磨組成物、及び該研磨組成物を用いた基板の研磨方法
US10640681B1 (en) * 2018-10-20 2020-05-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562719B2 (en) * 2000-08-04 2003-05-13 Hitachi, Ltd. Methods of polishing, interconnect-fabrication, and producing semiconductor devices
JP2006066851A (ja) * 2004-08-30 2006-03-09 Matsumura Sekiyu Kenkyusho:Kk 化学的機械研磨用組成物
US20070167343A1 (en) * 2004-08-31 2007-07-19 Sanyo Chemical Industries, Ltd. Surfactant
JP2009001810A (ja) * 1999-06-23 2009-01-08 Jsr Corp 研磨用組成物および研磨方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4171859B2 (ja) * 1999-06-23 2008-10-29 Jsr株式会社 研磨用組成物および研磨方法
JP2002249762A (ja) * 2001-02-27 2002-09-06 Sanyo Chem Ind Ltd 研磨材用添加剤
JP2004031442A (ja) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004051756A (ja) * 2002-07-19 2004-02-19 Sanyo Chem Ind Ltd Cmpプロセス用研磨組成物
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
JP5437571B2 (ja) * 2006-12-26 2014-03-12 花王株式会社 研磨液キット
JP2008182221A (ja) * 2006-12-28 2008-08-07 Sanyo Chem Ind Ltd 半導体基板用洗浄剤
JP5192952B2 (ja) * 2007-09-14 2013-05-08 三洋化成工業株式会社 磁気ディスク基板用洗浄剤
JP5192953B2 (ja) * 2007-09-14 2013-05-08 三洋化成工業株式会社 磁気ディスク用ガラス基板洗浄剤

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009001810A (ja) * 1999-06-23 2009-01-08 Jsr Corp 研磨用組成物および研磨方法
US6562719B2 (en) * 2000-08-04 2003-05-13 Hitachi, Ltd. Methods of polishing, interconnect-fabrication, and producing semiconductor devices
JP2006066851A (ja) * 2004-08-30 2006-03-09 Matsumura Sekiyu Kenkyusho:Kk 化学的機械研磨用組成物
US20070167343A1 (en) * 2004-08-31 2007-07-19 Sanyo Chemical Industries, Ltd. Surfactant

Also Published As

Publication number Publication date
MY163071A (en) 2017-08-15
CN103619982B (zh) 2015-09-30
TW201307543A (zh) 2013-02-16
CN103619982A (zh) 2014-03-05
WO2013002281A1 (fr) 2013-01-03

Similar Documents

Publication Publication Date Title
JP2014141667A (ja) 電子材料用研磨液
KR100985328B1 (ko) 화학적 기계적 평탄화를 위한 유기 입자를 포함하는 연마조성물
EP2029689B1 (fr) Composition polissante contenant une polyether amine
JP6973620B2 (ja) 研磨液、研磨液セット及び研磨方法
KR20080108598A (ko) 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및화학 기계 연마용 수계 분산체를 제조하기 위한 키트
WO2013086775A1 (fr) Bouillie de polissage mécanique-chimique pour métal et application de celle-ci
CN106663619A (zh) 硅晶圆研磨用组合物
KR20170097090A (ko) Sti 웨이퍼 연마에서 감소된 디싱을 나타내는 cmp 조성물
US20180244532A1 (en) Increased wetting of colloidal silica as a polishing slurry
CN111919286A (zh) 镓化合物系半导体基板研磨用组合物
JP2012054281A (ja) 研磨用組成物
JP2007318072A (ja) 研磨液組成物
JP5711589B2 (ja) 磁気ディスク基板用洗浄剤
KR20070100122A (ko) 반도체 웨이퍼 연마용 에칭액 조성물, 그것을 이용한연마용 조성물의 제조방법, 및 연마가공방법
TWI513804B (zh) 電子材料用研磨液、研磨方法及電子材料的製造方法
TW202231803A (zh) 研磨液及研磨方法
JP2015053101A (ja) 電子材料用研磨材及び研磨液
JP5575837B2 (ja) 電子材料用研磨液
JP2014142987A (ja) 電子材料用研磨液
JP2014125628A (ja) 電子材料用研磨液
JP2014141668A (ja) 電子材料用洗浄剤
CN103834305A (zh) 一种化学机械抛光液
KR20170012415A (ko) 높은 제거 속도 및 낮은 결함성을 갖는, 폴리실리콘 및 질화물에 비해 산화물에 대해 선택적인 cmp 조성물
JP2014124760A (ja) 電子材料用研磨液
JP2020500419A (ja) 改善されたディッシングおよびパターン選択性を有する酸化物および窒化物選択性のcmp組成物

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees