TWI513302B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI513302B
TWI513302B TW100107560A TW100107560A TWI513302B TW I513302 B TWI513302 B TW I513302B TW 100107560 A TW100107560 A TW 100107560A TW 100107560 A TW100107560 A TW 100107560A TW I513302 B TWI513302 B TW I513302B
Authority
TW
Taiwan
Prior art keywords
transistor
sensor
photo sensor
pixel
data
Prior art date
Application number
TW100107560A
Other languages
English (en)
Chinese (zh)
Other versions
TW201206186A (en
Inventor
Yoshiyuki Kurokawa
Takayuki Ikeda
Hikaru Tamura
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW201206186A publication Critical patent/TW201206186A/zh
Application granted granted Critical
Publication of TWI513302B publication Critical patent/TWI513302B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Studio Devices (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Position Input By Displaying (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Camera Bodies And Camera Details Or Accessories (AREA)
  • Indication In Cameras, And Counting Of Exposures (AREA)
  • Liquid Crystal (AREA)
TW100107560A 2010-03-11 2011-03-07 半導體裝置 TWI513302B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010054006 2010-03-11

Publications (2)

Publication Number Publication Date
TW201206186A TW201206186A (en) 2012-02-01
TWI513302B true TWI513302B (zh) 2015-12-11

Family

ID=44559632

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100107560A TWI513302B (zh) 2010-03-11 2011-03-07 半導體裝置

Country Status (5)

Country Link
US (2) US8502902B2 (enExample)
JP (3) JP5890608B2 (enExample)
KR (2) KR101706291B1 (enExample)
TW (1) TWI513302B (enExample)
WO (1) WO2011111530A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10884552B2 (en) 2019-04-15 2021-01-05 Au Optronics Corporation Touch panel with sensor elements

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JP5848586B2 (ja) 2010-11-12 2016-01-27 株式会社半導体エネルギー研究所 入出力装置
JP5774974B2 (ja) 2010-12-22 2015-09-09 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR102021908B1 (ko) * 2011-05-03 2019-09-18 삼성전자주식회사 광터치 스크린 장치 및 그 구동 방법
KR101854187B1 (ko) * 2011-07-28 2018-05-08 삼성전자주식회사 광센싱 장치 및 그 구동 방법, 광센싱 장치를 포함하는 광터치 스크린 장치
JP5270790B1 (ja) 2012-05-30 2013-08-21 富士フイルム株式会社 放射線画像撮影装置、放射線画像撮影システム、放射線画像撮影装置の制御プログラム、及び放射線画像撮影装置の制御方法
CN103855182A (zh) * 2012-11-28 2014-06-11 瀚宇彩晶股份有限公司 有机发光二极管触控显示面板及其电磁式触控显示装置
US10222911B2 (en) * 2013-04-12 2019-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US9817520B2 (en) 2013-05-20 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Imaging panel and imaging device
KR102085274B1 (ko) * 2013-06-21 2020-03-06 삼성디스플레이 주식회사 유기 발광 표시 장치
CN104867964B (zh) * 2015-05-18 2019-02-22 京东方科技集团股份有限公司 阵列基板、其制造方法以及有机发光二极管显示装置
KR102453950B1 (ko) * 2015-09-30 2022-10-17 엘지디스플레이 주식회사 표시장치와 그 구동 방법
US20170170218A1 (en) * 2015-12-09 2017-06-15 Dpix, Llc Top gate metal oxide thin film transistor switching device for imaging applications
CN106529463B (zh) * 2016-10-28 2019-04-23 京东方科技集团股份有限公司 一种指纹识别显示面板、显示装置和指纹识别方法
JP6892577B2 (ja) * 2017-04-28 2021-06-23 天馬微電子有限公司 イメージセンサ及びセンサ装置
KR102430318B1 (ko) * 2017-06-21 2022-08-10 삼성디스플레이 주식회사 표시 장치 및 그의 동작 방법
US10777122B2 (en) * 2017-12-27 2020-09-15 Lg Display Co., Ltd. Electroluminescence display device and driving method thereof
CN108304803B (zh) * 2018-01-31 2021-04-23 京东方科技集团股份有限公司 光检测电路、光检测方法和显示装置
KR102532091B1 (ko) * 2018-11-16 2023-05-15 엘지디스플레이 주식회사 표시 장치
JP7530898B2 (ja) * 2019-07-17 2024-08-08 株式会社半導体エネルギー研究所 表示装置

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Also Published As

Publication number Publication date
JP2011210248A (ja) 2011-10-20
TW201206186A (en) 2012-02-01
WO2011111530A1 (en) 2011-09-15
US10031622B2 (en) 2018-07-24
JP5890608B2 (ja) 2016-03-22
JP2016208527A (ja) 2016-12-08
US8502902B2 (en) 2013-08-06
US20130313412A1 (en) 2013-11-28
US20110221945A1 (en) 2011-09-15
JP2015149071A (ja) 2015-08-20
KR101754382B1 (ko) 2017-07-05
KR101706291B1 (ko) 2017-02-14
KR20170016036A (ko) 2017-02-10
KR20130028076A (ko) 2013-03-18
JP5970095B2 (ja) 2016-08-17
JP6204539B2 (ja) 2017-09-27

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