KR101706291B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101706291B1
KR101706291B1 KR1020127026016A KR20127026016A KR101706291B1 KR 101706291 B1 KR101706291 B1 KR 101706291B1 KR 1020127026016 A KR1020127026016 A KR 1020127026016A KR 20127026016 A KR20127026016 A KR 20127026016A KR 101706291 B1 KR101706291 B1 KR 101706291B1
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KR
South Korea
Prior art keywords
photosensor
transistor
data
pixel
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020127026016A
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English (en)
Korean (ko)
Other versions
KR20130028076A (ko
Inventor
요시유키 쿠로카와
타카유키 이케다
히카루 타무라
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20130028076A publication Critical patent/KR20130028076A/ko
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Publication of KR101706291B1 publication Critical patent/KR101706291B1/ko
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Studio Devices (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Position Input By Displaying (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Camera Bodies And Camera Details Or Accessories (AREA)
  • Indication In Cameras, And Counting Of Exposures (AREA)
  • Liquid Crystal (AREA)
KR1020127026016A 2010-03-11 2011-02-17 반도체 장치 Expired - Fee Related KR101706291B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010054006 2010-03-11
JPJP-P-2010-054006 2010-03-11
PCT/JP2011/054058 WO2011111530A1 (en) 2010-03-11 2011-02-17 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177003173A Division KR101754382B1 (ko) 2010-03-11 2011-02-17 반도체 장치

Publications (2)

Publication Number Publication Date
KR20130028076A KR20130028076A (ko) 2013-03-18
KR101706291B1 true KR101706291B1 (ko) 2017-02-14

Family

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Family Applications (2)

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KR1020127026016A Expired - Fee Related KR101706291B1 (ko) 2010-03-11 2011-02-17 반도체 장치
KR1020177003173A Expired - Fee Related KR101754382B1 (ko) 2010-03-11 2011-02-17 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177003173A Expired - Fee Related KR101754382B1 (ko) 2010-03-11 2011-02-17 반도체 장치

Country Status (5)

Country Link
US (2) US8502902B2 (enExample)
JP (3) JP5890608B2 (enExample)
KR (2) KR101706291B1 (enExample)
TW (1) TWI513302B (enExample)
WO (1) WO2011111530A1 (enExample)

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JP5848586B2 (ja) 2010-11-12 2016-01-27 株式会社半導体エネルギー研究所 入出力装置
JP5774974B2 (ja) 2010-12-22 2015-09-09 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR102021908B1 (ko) * 2011-05-03 2019-09-18 삼성전자주식회사 광터치 스크린 장치 및 그 구동 방법
KR101854187B1 (ko) * 2011-07-28 2018-05-08 삼성전자주식회사 광센싱 장치 및 그 구동 방법, 광센싱 장치를 포함하는 광터치 스크린 장치
JP5270790B1 (ja) 2012-05-30 2013-08-21 富士フイルム株式会社 放射線画像撮影装置、放射線画像撮影システム、放射線画像撮影装置の制御プログラム、及び放射線画像撮影装置の制御方法
CN103855182A (zh) * 2012-11-28 2014-06-11 瀚宇彩晶股份有限公司 有机发光二极管触控显示面板及其电磁式触控显示装置
US10222911B2 (en) * 2013-04-12 2019-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US9817520B2 (en) 2013-05-20 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Imaging panel and imaging device
KR102085274B1 (ko) * 2013-06-21 2020-03-06 삼성디스플레이 주식회사 유기 발광 표시 장치
CN104867964B (zh) * 2015-05-18 2019-02-22 京东方科技集团股份有限公司 阵列基板、其制造方法以及有机发光二极管显示装置
KR102453950B1 (ko) * 2015-09-30 2022-10-17 엘지디스플레이 주식회사 표시장치와 그 구동 방법
US20170170218A1 (en) * 2015-12-09 2017-06-15 Dpix, Llc Top gate metal oxide thin film transistor switching device for imaging applications
CN106529463B (zh) * 2016-10-28 2019-04-23 京东方科技集团股份有限公司 一种指纹识别显示面板、显示装置和指纹识别方法
JP6892577B2 (ja) * 2017-04-28 2021-06-23 天馬微電子有限公司 イメージセンサ及びセンサ装置
KR102430318B1 (ko) * 2017-06-21 2022-08-10 삼성디스플레이 주식회사 표시 장치 및 그의 동작 방법
US10777122B2 (en) * 2017-12-27 2020-09-15 Lg Display Co., Ltd. Electroluminescence display device and driving method thereof
CN108304803B (zh) * 2018-01-31 2021-04-23 京东方科技集团股份有限公司 光检测电路、光检测方法和显示装置
KR102532091B1 (ko) * 2018-11-16 2023-05-15 엘지디스플레이 주식회사 표시 장치
TWI700621B (zh) 2019-04-15 2020-08-01 友達光電股份有限公司 觸控面板
JP7530898B2 (ja) * 2019-07-17 2024-08-08 株式会社半導体エネルギー研究所 表示装置

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JP2008053583A (ja) 2006-08-28 2008-03-06 Nec Corp 半導体受光素子及び半導体光集積素子
JP2009048173A (ja) 2007-08-21 2009-03-05 Korea Advanced Inst Of Sci Technol ディスプレイ駆動装置

Also Published As

Publication number Publication date
JP2011210248A (ja) 2011-10-20
TW201206186A (en) 2012-02-01
WO2011111530A1 (en) 2011-09-15
US10031622B2 (en) 2018-07-24
JP5890608B2 (ja) 2016-03-22
TWI513302B (zh) 2015-12-11
JP2016208527A (ja) 2016-12-08
US8502902B2 (en) 2013-08-06
US20130313412A1 (en) 2013-11-28
US20110221945A1 (en) 2011-09-15
JP2015149071A (ja) 2015-08-20
KR101754382B1 (ko) 2017-07-05
KR20170016036A (ko) 2017-02-10
KR20130028076A (ko) 2013-03-18
JP5970095B2 (ja) 2016-08-17
JP6204539B2 (ja) 2017-09-27

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