TWI511794B - A film pattern forming apparatus, a film pattern forming method, and a device adjusting method - Google Patents
A film pattern forming apparatus, a film pattern forming method, and a device adjusting method Download PDFInfo
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- TWI511794B TWI511794B TW101126637A TW101126637A TWI511794B TW I511794 B TWI511794 B TW I511794B TW 101126637 A TW101126637 A TW 101126637A TW 101126637 A TW101126637 A TW 101126637A TW I511794 B TWI511794 B TW I511794B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
- B05B12/084—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to condition of liquid or other fluent material already sprayed on the target, e.g. coating thickness, weight or pattern
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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Description
本發明係有關一種藉由從噴嘴朝向基板吐出薄膜材料的液滴來形成薄膜圖案之裝置、薄膜圖案的形成方法及裝置的調整方法。The present invention relates to an apparatus for forming a thin film pattern by ejecting droplets of a film material from a nozzle toward a substrate, a method of forming a thin film pattern, and a method of adjusting the apparatus.
對在印刷配線板形成阻焊抗蝕劑圖案之以往的方法進行說明。首先,在表面形成有回路圖案之印刷配線板的整個面塗佈光敏性阻焊抗蝕劑。利用預定的掩模圖案,對阻焊抗蝕劑膜進行曝光之後顯影,藉此形成阻焊抗蝕劑圖案。A conventional method of forming a solder resist pattern on a printed wiring board will be described. First, a photosensitive solder resist is applied to the entire surface of a printed wiring board having a circuit pattern formed on its surface. The solder resist film is exposed and developed using a predetermined mask pattern, thereby forming a solder resist resist pattern.
將阻焊抗蝕劑液滴化,使液滴僅附著於印刷配線板的所期望的區域並使其固化,藉此形成有阻焊抗蝕劑圖案之技術備受矚目。阻焊抗蝕劑的液滴從複數個噴嘴朝向印刷配線板吐出。能夠藉由向附著於印刷配線板的表面之液滴照射紫外線來使液滴固化。A technique in which a solder resist resist is dropletized so that droplets adhere only to a desired region of a printed wiring board and is cured, whereby a technique of forming a solder resist pattern is attracting attention. The droplets of the solder resist are discharged from a plurality of nozzles toward the printed wiring board. The droplets can be solidified by irradiating the droplets attached to the surface of the printed wiring board with ultraviolet rays.
專利文獻1:日本特開2004-104104號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2004-104104
有時因阻焊抗蝕劑等液狀材料而在噴嘴孔產生堵塞等不良情況。若產生噴嘴孔堵塞等不良情況,則不得不停止運轉中的裝置並更換噴頭。期望縮減裝置的運轉停止時間之技術。並且,期望迅速地進行噴嘴孔的不良恢復處理(修復處理)之技術。There is a problem that clogging occurs in the nozzle hole due to a liquid material such as a solder resist. If a problem such as clogging of the nozzle hole occurs, the device in operation must be stopped and the nozzle replaced. A technique for reducing the operation stop time of the device is desired. Further, a technique for promptly performing a defect recovery process (repair process) of the nozzle holes is desired.
基於本發明的一個觀點,提供一種薄膜圖案形成裝置,其具有:載物台,其保持基板;噴嘴單元,與前述基板對置且設置有向前述基板吐出薄膜材料的液滴之複數個噴嘴孔;移動機構,相對於前述噴嘴單元,向該基板的面內方向移動前述基板;第1拍攝裝置,檢測由塗佈於前述基板之薄膜材料形成之薄膜圖案;及控制裝置,前述控制裝置使薄膜材料的液滴從前述噴嘴單元向前述基板吐出,由附著於前述基板之薄膜材料形成檢查圖案,獲取用前述第1拍攝裝置拍攝之前述檢查圖案的圖像資料,藉由分析所獲取之圖像資料來判定前述噴嘴單元的噴嘴孔是否良好。According to one aspect of the present invention, there is provided a thin film pattern forming apparatus comprising: a stage holding a substrate; and a nozzle unit having a plurality of nozzle holes opposed to the substrate and provided with droplets of the film material discharged to the substrate a moving mechanism that moves the substrate in an in-plane direction of the substrate with respect to the nozzle unit; a first imaging device detects a film pattern formed of a film material applied to the substrate; and a control device that controls the film The liquid droplets of the material are ejected from the nozzle unit to the substrate, and an inspection pattern is formed by the film material adhered to the substrate, and image data of the inspection pattern imaged by the first imaging device is acquired, and the acquired image is analyzed. The data is used to determine whether the nozzle holes of the nozzle unit are good.
基於本發明的其他觀點,提供一種薄膜圖案形成方法,前述薄膜圖案形成裝置具有:從具有複數個噴嘴孔之噴嘴單元吐出薄膜材料的液滴來在基板上形成由薄膜材料構成之檢查圖案之製程;藉由觀察前述檢查圖案來判定前述噴嘴孔是否良好之製程;及在停止從判定為不良之前述噴嘴孔吐出薄膜材料之狀態下,從正常的前述噴嘴孔吐出薄膜材料,藉此在基板上形成作為目標之薄膜圖案之製程。According to another aspect of the present invention, there is provided a film pattern forming apparatus comprising: a process of forming a test pattern composed of a film material on a substrate by discharging a film material from a nozzle unit having a plurality of nozzle holes; a process for determining whether the nozzle hole is good by observing the inspection pattern; and discharging the film material from the normal nozzle hole in a state where the film material is discharged from the nozzle hole determined to be defective, thereby being on the substrate A process for forming a target film pattern.
基於本發明的又一其他觀點,提供一種薄膜形成裝置的調整方法,前述薄膜形成裝置具有:載物台,其在保持面保持基板;複數個噴頭,其與保持在前述載物台之基板對置且形成有朝向前述基板吐出薄膜材料的液滴之複數個噴嘴孔;移動機構,使前述載物台與前述噴頭的其中一方相對於另一方向與前述保持面平行的方向移動;及拍攝裝置,能夠相對於前述噴頭移動,並構成為能夠移動至能夠拍攝前述噴嘴孔之位置,前述調整方法具有:將前述拍攝裝置移動至能夠拍攝前述噴頭的位置,並拍攝至少2個前述噴頭之製程;及依拍攝到前述噴頭之圖像,調整複數個前述噴頭的相對位置之製程。According to still another aspect of the present invention, there is provided a method of adjusting a thin film forming apparatus, wherein the thin film forming apparatus has a stage that holds a substrate on a holding surface, and a plurality of heads that are paired with a substrate held on the stage a plurality of nozzle holes for discharging liquid droplets of the film material toward the substrate; and a moving mechanism for moving one of the stage and the head in a direction parallel to the holding surface in the other direction; and an imaging device The movable nozzle is movable to a position capable of capturing the nozzle hole, and the adjustment method includes: moving the imaging device to a position at which the head can be imaged, and photographing at least two of the nozzles; And the process of adjusting the relative positions of the plurality of the aforementioned nozzles according to the image of the nozzle.
能夠藉由進行使判定為不良之噴嘴孔不吐出薄膜材料之控制來防止產生起因於不良噴嘴孔之薄膜圖案不良。並且,即使在產生不良噴嘴孔之狀態下亦能夠藉由進行薄膜圖案的形成來抑制裝置運轉率的下降。It is possible to prevent the film pattern defect caused by the defective nozzle hole from being generated by controlling the nozzle hole which is determined to be defective without discharging the film material. Further, even in a state in which a defective nozzle hole is generated, it is possible to suppress a decrease in the operating rate of the device by forming a thin film pattern.
能夠藉由拍攝至少2個前述噴頭來輕鬆地調整噴頭的相對位置。The relative position of the head can be easily adjusted by taking at least two of the aforementioned nozzles.
第1圖中示出基於實施例1之薄膜形成裝置的概要圖。平板20上藉由移動機構21保持有載物台25。移動機 構21包括X移動機構22、Y移動機構23及θ 旋轉機構24。對將水平面設為XY面、將鉛垂方向設為Z軸之XYZ正交坐標系進行定義。X移動機構22向X軸方向移動Y移動機構23。Y移動機構23向Y方向移動θ 旋轉機構24。θ 旋轉機構24以與Z軸平行的軸為旋轉中心,改變載物台25的旋轉方向的姿勢。載物台25保持作為薄膜形成對象之基板(例如印刷配線板)50。載物台25上例如使用真空卡盤。Fig. 1 is a schematic view showing a thin film forming apparatus according to the first embodiment. The stage 25 is held by the moving mechanism 21 on the flat plate 20. The moving mechanism 21 includes an X moving mechanism 22, a Y moving mechanism 23, and an θ rotating mechanism 24. The XYZ orthogonal coordinate system in which the horizontal plane is the XY plane and the vertical direction is the Z axis is defined. The X moving mechanism 22 moves the Y moving mechanism 23 in the X-axis direction. The Y moving mechanism 23 moves the θ rotation mechanism 24 in the Y direction. The θ rotation mechanism 24 changes the posture of the rotation direction of the stage 25 with the axis parallel to the Z axis as the center of rotation. The stage 25 holds a substrate (for example, a printed wiring board) 50 as a film formation target. A vacuum chuck is used, for example, on the stage 25.
平板20上方藉由支柱30支持有橫樑31。橫樑31上安裝有噴嘴單元支撐機構65及拍攝裝置32。噴嘴單元支撐機構65上支撐有複數個噴嘴單元40。對於噴嘴單元40的結構及配置的詳細內容,將在後面進行說明。拍攝裝置32及噴嘴單元40與保持在載物台25之基板50對置。拍攝裝置32拍攝形成於基板50的表面之配線圖案、對準標記、形成於基板50之薄膜圖案等。拍攝而得到之圖像資料輸入至控制裝置33。每個噴嘴單元40從複數個噴嘴孔朝向基板50以液滴方式吐出紫外線固化型樹脂,例如阻焊抗蝕劑等薄膜材料。吐出之薄膜材料附著於基板50的表面。A beam 31 is supported by the support 30 above the flat plate 20. A nozzle unit support mechanism 65 and an imaging device 32 are attached to the beam 31. A plurality of nozzle units 40 are supported on the nozzle unit support mechanism 65. Details of the structure and arrangement of the nozzle unit 40 will be described later. The imaging device 32 and the nozzle unit 40 are opposed to the substrate 50 held on the stage 25. The imaging device 32 captures a wiring pattern formed on the surface of the substrate 50, an alignment mark, a thin film pattern formed on the substrate 50, and the like. The image data obtained by the shooting is input to the control device 33. Each of the nozzle units 40 discharges an ultraviolet curable resin such as a solder resist or the like from a plurality of nozzle holes toward the substrate 50 in a droplet form. The discharged film material adheres to the surface of the substrate 50.
修復裝置37向噴嘴單元40下方移動,並修理噴嘴單元40的暫時性故障、例如噴嘴孔堵塞等。作為噴嘴孔堵塞的修理方法,例如可舉出凈化、吸引、擦拭等。凈化是指對容納薄膜材料之噴嘴內的空間外加正壓之處理。吸引是指對噴嘴外側的空間外加負壓之處理。擦拭是指用刷子 擦去噴嘴單元40的噴嘴孔開口之表面之處理。當在基板50上形成薄膜時,修復裝置37從噴嘴單元40與基板50之間的空間退避。The repairing device 37 moves below the nozzle unit 40 and repairs a temporary failure of the nozzle unit 40, such as a nozzle hole clogging or the like. Examples of the method of repairing the nozzle hole clogging include purification, suction, wiping, and the like. Purification refers to the treatment of applying a positive pressure to the space within the nozzle containing the film material. Attraction refers to the treatment of applying a negative pressure to the space outside the nozzle. Wiping means using a brush The process of wiping off the surface of the nozzle hole opening of the nozzle unit 40. When a film is formed on the substrate 50, the repairing device 37 retreats from the space between the nozzle unit 40 and the substrate 50.
控制裝置33控制X移動機構22、Y移動機構23、θ 旋轉機構24、載物台25、噴嘴單元40及修復裝置37。控制裝置33包括記憶裝置34。記憶裝置34中記憶有應描繪之薄膜圖案的圖像資料等。The control device 33 controls the X moving mechanism 22, the Y moving mechanism 23, the θ rotation mechanism 24, the stage 25, the nozzle unit 40, and the repairing device 37. The control device 33 includes a memory device 34. Image data or the like of the film pattern to be drawn is stored in the memory device 34.
操作人員透過輸入裝置35向控制裝置33輸入各種指令(command)或控制所需的數值資料。輸入裝置35例如使用鍵盤、觸控面板等。控制裝置33從輸出裝置36對操作人員輸出警報等各種情報。輸出裝置36使用液晶顯示器、發音裝置等。The operator inputs various commands (command) or numerical data required for control to the control device 33 via the input device 35. The input device 35 uses, for example, a keyboard, a touch panel, or the like. The control device 33 outputs various kinds of information such as an alarm to the operator from the output device 36. The output device 36 uses a liquid crystal display, a sounding device, or the like.
第1圖中,以相對於平板20固定噴嘴單元40,且以載物台25移動的方式配置載物台25,但是亦可與其相反地,在平板20固定載物台25,且使噴嘴單元40相對於載物台25移動。或者,亦可構成為向X方向移動噴嘴單元40,向Y方向移動載物台25。在任何情況下,只要使噴嘴單元40及載物台25的其中一方相對於另一方相對地移動即可。In the first drawing, the stage 25 is fixed to the flat plate 20, and the stage 25 is placed so that the stage 25 moves. Alternatively, the stage 25 can be fixed to the flat plate 20, and the nozzle unit can be fixed. 40 moves relative to the stage 25. Alternatively, the nozzle unit 40 may be moved in the X direction and the stage 25 may be moved in the Y direction. In any case, it is only necessary to move one of the nozzle unit 40 and the stage 25 relative to the other.
第2圖A中示出每個噴嘴單元40的立體圖。噴嘴夾具(支撐構件)41的底面安裝有4個噴頭42A~42D。噴頭42A~42D朝向X軸的負方向以該順序排列。每個噴頭42A~42D形成有複數個噴嘴孔45。比噴頭42A更靠外側及比噴頭42D更靠外側分別配置有光源43。光源43對基 板50(第1圖)照射紫外線。紫外線使附著於基板50之紫外線固化型薄膜材料固化。另外,當薄膜材料使用藉由紫外線以外的波長域的光固化之材料時,使用放射能夠固化薄膜材料之波長域的光之光源作為光源43。A perspective view of each nozzle unit 40 is shown in Fig. 2A. Four nozzles 42A to 42D are attached to the bottom surface of the nozzle holder (support member) 41. The heads 42A to 42D are arranged in this order in the negative direction toward the X axis. Each of the heads 42A to 42D is formed with a plurality of nozzle holes 45. The light source 43 is disposed outside the head 42A and outside the head 42D. Light source 43 The plate 50 (Fig. 1) is irradiated with ultraviolet rays. The ultraviolet rays cure the ultraviolet curable film material adhering to the substrate 50. Further, when the film material uses a material which is cured by light in a wavelength range other than ultraviolet rays, a light source which emits light in a wavelength range capable of curing the film material is used as the light source 43.
第2圖B中示出噴頭42A~42D及光源43的仰視圖。噴頭42A的底面(與基板50對置之表面)形成有2列噴嘴列46a、噴嘴列46b。每個噴嘴列46a及噴嘴列46b由向Y軸方向以間距(週期)8P排列之複數個噴嘴孔45構成。噴嘴列46b相對於噴嘴列46a向X軸的負方向偏離,另外,向Y軸的負方向僅偏離間距4P。亦即,噴頭42A的噴嘴孔45在Y方向上,以間距4P等間隔分佈。間距4P例如相當於300dpi的分辨率。A bottom view of the heads 42A to 42D and the light source 43 is shown in Fig. 2B. The bottom surface of the shower head 42A (the surface facing the substrate 50) is formed with two nozzle rows 46a and a nozzle row 46b. Each of the nozzle rows 46a and the nozzle rows 46b is composed of a plurality of nozzle holes 45 arranged at a pitch (period) 8P in the Y-axis direction. The nozzle row 46b is offset from the nozzle row 46a in the negative direction of the X-axis, and is shifted from the negative direction of the Y-axis by only the pitch 4P. That is, the nozzle holes 45 of the head 42A are distributed at equal intervals of the pitch 4P in the Y direction. The pitch 4P is equivalent to, for example, a resolution of 300 dpi.
噴頭42B~42D的結構與噴頭42A的結構相同。噴頭42B、噴頭42C、噴頭42D機械地定位成分別相對於噴頭42A向Y軸的負方向僅偏離2P、P、3P,並安裝於噴頭夾具41(第2圖A)上。比噴頭42A更靠外側及比噴頭42D更靠外側分別配置有光源43。The structures of the heads 42B to 42D are the same as those of the head 42A. The head 42B, the head 42C, and the head 42D are mechanically positioned to be displaced from the head 42A by only 2P, P, and 3P in the negative direction of the Y-axis, and are attached to the head holder 41 (Fig. 2A). The light source 43 is disposed outside the head 42A and outside the head 42D.
如第3圖所示,在與X軸垂直的假想平面56垂直投影噴頭42A~42D的噴嘴孔45之圖像55A~55D以相當於1200dpi的分辨率之間距P向Y方向等間隔排列。因此,能夠藉由從4個噴頭42A~42D吐出液狀材料來在Y軸方向上以1200dpi的分辨率形成薄膜圖案。As shown in Fig. 3, the images 55A to 55D of the nozzle holes 45 of the vertical projection heads 42A to 42D perpendicular to the X-axis are arranged at equal intervals in the Y direction at a resolution corresponding to 1200 dpi. Therefore, the thin film pattern can be formed at a resolution of 1200 dpi in the Y-axis direction by discharging the liquid material from the four heads 42A to 42D.
第4圖中示出應形成於基板50的表面之薄膜圖案(阻焊抗蝕劑)的一例。1片基板50上復式安裝複數個印 刷配線板。與印刷配線板對應之相同形狀的複數個薄膜圖案53向X方向及Y方向以行列狀配置。每個薄膜圖案53具有用於焊接電子組件的開口。銅或銅合金等的導電膜在開口內暴露。FIG. 4 shows an example of a thin film pattern (solder resist) to be formed on the surface of the substrate 50. Multi-printing on a single substrate 50 Brush the wiring board. A plurality of thin film patterns 53 having the same shape corresponding to the printed wiring board are arranged in a matrix in the X direction and the Y direction. Each of the film patterns 53 has an opening for soldering the electronic components. A conductive film of copper or a copper alloy or the like is exposed in the opening.
基板50的邊緣附近劃定未配置薄膜圖案53之環狀的未使用區域52。在被未使用區域52包圍之目標圖案區域51內形成薄膜圖案53。An annular unused region 52 in which the film pattern 53 is not disposed is defined near the edge of the substrate 50. The thin film pattern 53 is formed in the target pattern region 51 surrounded by the unused region 52.
第5圖A中示出噴嘴單元40及噴嘴單元支撐機構65的仰視圖。噴嘴單元支撐機構65上可拆卸地安裝有4個噴嘴單元40。各個噴嘴單元40包括噴頭42A~42D及噴嘴夾具41。以在與X軸垂直的假想平面垂直投影4個噴嘴單元的噴嘴孔之圖像以向Y軸方向等間隔排列之方式調節噴嘴單元40的相對位置。A bottom view of the nozzle unit 40 and the nozzle unit support mechanism 65 is shown in Fig. 5A. Four nozzle units 40 are detachably mounted on the nozzle unit support mechanism 65. Each of the nozzle units 40 includes a head 42A to 42D and a nozzle holder 41. The relative positions of the nozzle units 40 are adjusted such that the images of the nozzle holes of the four nozzle units are vertically projected on the imaginary plane perpendicular to the X-axis at equal intervals in the Y-axis direction.
控制裝置33向驅動器67送出液狀薄膜材料的吐出指令。驅動器67依接收之吐出指令在適當的時刻對規定的噴嘴孔45(第2圖A、第2圖B)送出吐出信號。依記憶於記憶裝置34(第1圖)之圖像資料,一邊向X方向移動基板50,一邊在適當的時刻從規定的噴嘴孔吐出液狀材料,藉此能夠在基板50的表面形成薄膜圖案53(第4圖)。The control device 33 sends a discharge command of the liquid film material to the driver 67. The driver 67 sends a discharge signal to a predetermined nozzle hole 45 (Fig. 2A, Fig. 2B) at an appropriate timing in accordance with the received discharge command. By moving the substrate 50 in the X direction while moving the substrate 50 in the X direction in accordance with the image data stored in the memory device 34 (Fig. 1), a liquid material can be discharged from a predetermined nozzle hole at an appropriate timing, whereby a film pattern can be formed on the surface of the substrate 50. 53 (Fig. 4).
若向X軸的正方向移動基板50,則噴嘴單元40相對於基板50向X軸的負方向移動。向X軸方向移動基板50與相對於基板50向X軸的反方向移動噴嘴單元40是等價的。本說明書中,向X方向移動基板50之動作稱為由 噴嘴單元40掃描基板50。When the substrate 50 is moved in the positive direction of the X-axis, the nozzle unit 40 moves in the negative direction of the X-axis with respect to the substrate 50. Moving the substrate 50 in the X-axis direction is equivalent to moving the nozzle unit 40 in the opposite direction to the X-axis with respect to the substrate 50. In the present specification, the action of moving the substrate 50 in the X direction is called The nozzle unit 40 scans the substrate 50.
噴嘴單元支撐機構65上與噴嘴單元40對應地安裝有感測器66。感測器66檢測噴嘴單元40的裝卸狀態。感測器66的檢測結果被輸入至控制裝置33。感測器66能夠使用機械地探測有無噴嘴單元之感測器、光學地探測有無噴嘴單元之感測器等。可由操作人員從輸入裝置35(第1圖)輸入噴嘴單元40的拆卸狀態來代替用感測器66檢測噴嘴單元40的裝卸狀態。A sensor 66 is mounted on the nozzle unit support mechanism 65 corresponding to the nozzle unit 40. The sensor 66 detects the loading and unloading state of the nozzle unit 40. The detection result of the sensor 66 is input to the control device 33. The sensor 66 can use a sensor that mechanically detects the presence or absence of a nozzle unit, a sensor that optically detects the presence or absence of a nozzle unit, and the like. Instead of using the sensor 66 to detect the detachment state of the nozzle unit 40, the operator can input the detached state of the nozzle unit 40 from the input device 35 (Fig. 1).
第5圖B中示出基於噴嘴單元40之基板50表面的掃描順序(掃描序列)的一例。將1個噴嘴單元40能夠由1次掃描附著薄膜材料之區域稱為單元掃描區域70。藉由1次掃描,在Y方向上以1200dpi的分辨率形成薄膜圖案。另外,若向Y方向挪動噴嘴孔的半間距並進行往復掃描,則能夠以2400dpi的分辨率形成薄膜圖案。此時,1次往復掃描稱為“1次掃描”。An example of the scanning order (scanning sequence) based on the surface of the substrate 50 of the nozzle unit 40 is shown in FIG. A region in which one nozzle unit 40 can be attached to the film material by one scanning is referred to as a unit scanning region 70. The thin film pattern was formed at a resolution of 1200 dpi in the Y direction by one scan. Further, when the half pitch of the nozzle holes is moved in the Y direction and the reciprocal scanning is performed, the film pattern can be formed with a resolution of 2400 dpi. At this time, one reciprocal scan is referred to as "one scan".
藉由4個噴嘴單元40,能夠在第1次掃描中使薄膜材料附著於向Y方向排列之4個單元掃描區域70a。向Y方向偏離噴嘴單元40並進行第2次掃描,藉此能夠使薄膜材料附著於與在第1次掃描中已塗佈液狀材料之4個單元掃描區域70a鄰接之4個單元掃描區域70b。以能夠由1次掃描附著薄膜材料之複數個單元掃描區域劃定之區域稱為“Pass區域71”。當進行單向掃描時,如第5圖B中由箭頭所示,掃描相互鄰接之Pass區域71時的噴嘴單元40的掃描方向成為相互反方向。By the four nozzle units 40, the film material can be attached to the four unit scanning regions 70a arranged in the Y direction in the first scanning. When the nozzle unit 40 is deflected in the Y direction and the second scanning is performed, the film material can be adhered to the four unit scanning regions 70b adjacent to the four unit scanning regions 70a of the liquid material applied in the first scanning. . A region defined by a plurality of unit scanning regions capable of attaching a film material by one scanning is referred to as a "pass region 71". When the one-way scanning is performed, as shown by the arrow in FIG. 5B, the scanning directions of the nozzle units 40 when the adjacent adjacent Pass regions 71 are scanned are opposite to each other.
當能夠由8個單元掃描區域70覆蓋基板50的目標圖案區域51(第4圖)時,能夠藉由2次掃描在目標圖案區域51的整個區域形成薄膜圖案。When the target pattern region 51 (Fig. 4) of the substrate 50 can be covered by the eight unit scanning regions 70, the thin film pattern can be formed in the entire region of the target pattern region 51 by two scanning operations.
第6圖A中示出拆卸4個噴嘴單元40中的1個噴嘴單元之狀態的噴嘴單元支撐機構65及噴嘴單元40的仰視圖。由虛線顯示拆卸之噴嘴單元40。第6圖A中示出拆卸在Y方向上位於端之噴嘴單元40之狀態。從與拆卸之噴嘴單元40對應之感測器66向控制裝置33通知“拆卸狀態”。FIG. 6A is a bottom view showing the nozzle unit supporting mechanism 65 and the nozzle unit 40 in a state in which one of the four nozzle units 40 is removed. The disassembled nozzle unit 40 is shown by a broken line. The state in which the nozzle unit 40 located at the end in the Y direction is removed is shown in Fig. 6A. The "disassembly state" is notified from the sensor 66 corresponding to the disassembled nozzle unit 40 to the control device 33.
第6圖B中示出拆卸1個噴嘴單元40時的掃描順序的一例。若控制裝置33(第6圖A)依來自感測器66(第6圖A)的通知探測已拆卸至少1個噴嘴單元40,則不使用拆卸之噴嘴單元40並計算形成薄膜圖案之掃描順序。由於在第6圖A所示之狀態下僅能使用3個噴嘴單元40,所以1個Pass區域71由3個單元掃描區域70構成。第5圖B所示之例子中,能夠由2次掃描對目標圖案區域51的整個區域進行掃描,但第6圖B所示之例子中,為掃描整個區域不得不進行3次掃描。An example of the scanning sequence when one nozzle unit 40 is removed is shown in FIG. 6B. If the control device 33 (Fig. 6A) detects that the at least one nozzle unit 40 has been detached in response to the notification from the sensor 66 (Fig. 6A), the detached nozzle unit 40 is not used and the scanning sequence for forming the thin film pattern is calculated. . Since only three nozzle units 40 can be used in the state shown in FIG. 6A, one Pass region 71 is composed of three unit scanning regions 70. In the example shown in Fig. 5B, the entire area of the target pattern area 51 can be scanned by two scans. However, in the example shown in Fig. 6B, the scanning of the entire area has to be performed three times.
在第1次掃描中薄膜材料附著之3個單元掃描區域70a、在第2次掃描中薄膜材料附著之3個單元掃描區域70b及在第3次掃描中薄膜材料附著之2個單元掃描區域70c覆蓋目標圖案區域51(第4圖)的整個區域。The three unit scanning regions 70a to which the film material adheres in the first scanning, the three unit scanning regions 70b to which the film material adheres in the second scanning, and the two unit scanning regions 70c to which the film material adheres in the third scanning The entire area of the target pattern area 51 (Fig. 4) is covered.
第7圖A中示出基於控制裝置33(第1圖)之控制順序的流程圖。A flowchart based on the control sequence of the control device 33 (Fig. 1) is shown in Fig. 7A.
步驟S1中,形成檢查圖案。第8圖A中示出檢查圖案60的一例。檢查圖案60設定成從各個噴嘴孔45(第2圖A、第2圖B)吐出之液狀材料不會在基板50的表面相互連續。作為一例,基於從複數個噴嘴列46a、噴嘴列46b(第2圖B)分別吐出之液狀材料之圖案形成於基板50中在X方向上的不同位置。並且,藉由每個噴嘴孔45形成之薄膜材料的圖案為向X方向較長之直線圖案。檢查圖案60形成於基板50的未使用區域52(第4圖)。In step S1, an inspection pattern is formed. An example of the inspection pattern 60 is shown in Fig. 8A. The inspection pattern 60 is set such that the liquid materials discharged from the respective nozzle holes 45 (second FIG. 2, FIG. 2B) are not continuous with each other on the surface of the substrate 50. As an example, a pattern of liquid materials discharged from a plurality of nozzle rows 46a and nozzle rows 46b (second FIG. B) is formed at different positions in the substrate 50 in the X direction. Further, the pattern of the film material formed by each nozzle hole 45 is a straight line pattern that is long in the X direction. The inspection pattern 60 is formed on the unused region 52 of the substrate 50 (Fig. 4).
第7圖A的步驟S2中,用拍攝裝置32(第1圖)拍攝形成之檢查圖案。獲得之圖像資料輸入至控制裝置33(第1圖)。第8圖B中示出形成之檢查圖案61的一例。應形成直線圖案之位置61a未形成有直線圖案。並且,直線圖案61b變得短於本來的長度。直線圖案與噴嘴孔1對1對應,所以能夠藉由進行形成之檢查圖案61的圖像分析來探測不良噴嘴孔。若控制裝置33(第1圖)探測到不良噴嘴孔,則將用於識別不良噴嘴孔之噴嘴識別序號記憶於記憶裝置34(第1圖)。In step S2 of Fig. 7A, the formed inspection pattern is imaged by the imaging device 32 (Fig. 1). The obtained image data is input to the control device 33 (Fig. 1). An example of the inspection pattern 61 formed is shown in Fig. 8B. The position 61a where the straight line pattern should be formed is not formed with a straight line pattern. Further, the linear pattern 61b becomes shorter than the original length. Since the straight line pattern corresponds to the nozzle hole 1 to 1, the defective nozzle hole can be detected by image analysis of the formed inspection pattern 61. When the control device 33 (Fig. 1) detects a defective nozzle hole, the nozzle identification number for identifying the defective nozzle hole is stored in the memory device 34 (Fig. 1).
接著,第7圖A所示之步驟S3中,判定有無不適合使用之噴嘴單元。對於每一噴嘴單元40合計不良噴嘴孔的個數,若不良噴嘴孔的個數超過允許值,則將該噴嘴單元40判定為不適合使用之噴嘴單元(故障噴嘴單元)。該允許值記憶於記憶裝置34(第1圖)。操作人員從輸入裝置35(第1圖)輸入允許值。若輸入允許值,則控制裝置33重寫記憶於記憶裝置34之允許值。Next, in step S3 shown in Fig. 7A, it is determined whether or not there is a nozzle unit that is not suitable for use. When the number of defective nozzle holes is totaled for each nozzle unit 40, and the number of defective nozzle holes exceeds an allowable value, the nozzle unit 40 is determined to be a nozzle unit (faulty nozzle unit) that is not suitable for use. This allowable value is stored in the memory device 34 (Fig. 1). The operator inputs an allowable value from the input device 35 (Fig. 1). If an allowable value is input, the control device 33 rewrites the allowable value stored in the memory device 34.
在已拆卸一部份噴嘴單元時,不會形成與該噴嘴單元對應之檢查圖案。因此,關於拆卸之噴嘴單元,不進行是否適合於使用的判定。When a part of the nozzle unit has been removed, an inspection pattern corresponding to the nozzle unit is not formed. Therefore, regarding the disassembled nozzle unit, the determination as to whether or not it is suitable for use is not performed.
當未檢驗到不適合使用之噴嘴單元40時,步驟S4中形成薄膜圖案。When the nozzle unit 40 which is not suitable for use is not inspected, a film pattern is formed in step S4.
第7圖B中示出步驟S4的詳細流程圖。步驟SA1中,進行是否已拆卸至少一個噴嘴單元的判定。當所有噴嘴單元40均被安裝時,步驟SA2中以通常時的掃描序列(第S圖B)形成薄膜圖案。其中,“通常時的掃描序列”是指無判定為不良之噴嘴時的掃描序列。A detailed flowchart of step S4 is shown in Fig. 7B. In step SA1, a determination is made as to whether or not at least one nozzle unit has been removed. When all of the nozzle units 40 are mounted, a film pattern is formed in the usual scanning sequence (S-B) in step SA2. Here, the "normal scanning sequence" refers to a scanning sequence when no nozzle is determined to be defective.
形成薄膜圖案之前,控制裝置33從記憶裝置34讀出不良噴嘴孔的噴嘴識別序號。控制裝置33向驅動器67發送指令,以便不向不良噴嘴孔送出液狀材料的吐出信號,僅向正常的噴嘴孔發送吐出信號。藉此,形成薄膜圖案時,薄膜材料不會從不良噴嘴孔吐出。薄膜材料不會著落於與不良噴嘴孔對應之位置上,但是著落於其周圍之薄膜材料向面內方向擴展,藉此可避免塗佈泄漏。Before forming the thin film pattern, the control device 33 reads the nozzle identification number of the defective nozzle hole from the memory device 34. The control device 33 sends a command to the driver 67 so that the discharge signal of the liquid material is not sent to the defective nozzle hole, and only the discharge signal is transmitted to the normal nozzle hole. Thereby, when the film pattern is formed, the film material is not discharged from the defective nozzle hole. The film material does not land at a position corresponding to the defective nozzle hole, but the film material that is placed around it expands in the in-plane direction, thereby avoiding coating leakage.
例如,作為目標之薄膜圖案包括藉由1個噴嘴孔形成之細直線狀的圖案時,因1個不良噴嘴孔對薄膜圖案產生致命性的缺陷。這種情況下,步驟S3(第7圖A)中,將不良噴嘴孔的個數的允許值設定成O即可。For example, when the target thin film pattern includes a thin linear pattern formed by one nozzle hole, a defective nozzle hole causes a fatal defect to the thin film pattern. In this case, in step S3 (Fig. 7A), the allowable value of the number of defective nozzle holes may be set to 0.
形成薄膜圖案之後返回到第7圖A的步驟S5。After the film pattern is formed, it returns to step S5 of Fig. 7A.
步驟SA1中,檢驗到已拆卸至少1個噴嘴單元時,步驟SA3中作成用於形成僅以安裝之噴嘴單元40作為目 標之薄膜圖案的掃描序列(例如第6圖B)。另外,對於能夠使用之噴嘴單元40的所有組合,可預先作成掃描序列並記憶於記憶裝置34(第1圖)。In step SA1, when it is checked that at least one nozzle unit has been removed, the step SA3 is made to form the nozzle unit 40 only for mounting. The scanning sequence of the standard film pattern (for example, Figure 6B). Further, all combinations of the nozzle units 40 that can be used can be prepared in advance in a scan sequence and stored in the memory device 34 (Fig. 1).
步驟SA4中,以在步驟SA3中獲得之故障時的掃描序列形成薄膜圖案。形成薄膜圖案之後返回到第7圖A的步驟S5。In step SA4, a thin film pattern is formed with the scan sequence at the time of the failure obtained in step SA3. After the film pattern is formed, it returns to step S5 of Fig. 7A.
第7圖A的步驟S5中,判定有無暫時停止要求。操作人員透過輸入裝置35(第1圖)將暫時停止要求輸入至控制裝置33。記憶裝置34中備有暫時停止要求標誌,輸入暫時停止要求時,該標誌成為“有要求”狀態。例如欲在已拆卸噴嘴單元40之部位安裝新的噴嘴單元40時,操作人員輸入暫時停止要求。In step S5 of Fig. 7A, it is determined whether or not there is a temporary stop request. The operator inputs the temporary stop request to the control device 33 through the input device 35 (Fig. 1). The memory device 34 is provided with a temporary stop request flag, and when a temporary stop request is input, the flag is in a "requested" state. For example, when a new nozzle unit 40 is to be installed at a portion where the nozzle unit 40 has been removed, the operator inputs a temporary stop request.
沒有暫時停止要求時,步驟S6中判定是否結束運行。在另一基板50形成薄膜圖案時,返回到步驟S1,在應重新形成薄膜圖案之基板50的未使用區域52(第4圖)形成檢查圖案。完成所有基板50的處理之後,結束運行。When the request is not temporarily stopped, it is determined in step S6 whether or not the operation is ended. When the thin film pattern is formed on the other substrate 50, the process returns to step S1, and an inspection pattern is formed in the unused region 52 (Fig. 4) of the substrate 50 on which the thin film pattern should be newly formed. After the processing of all the substrates 50 is completed, the operation is ended.
步驟S3中,當判定為具有不適合使用之噴嘴單元時,步驟S7中判定不適合使用之噴嘴單元為暫時性故障或固定性故障。例如,即使進行規定次數、例如5次修復處理,故障亦不恢復時,判定為固定性故障。修復處理的次數為4次以下時,判定為暫時性故障。In step S3, when it is determined that there is a nozzle unit that is not suitable for use, the nozzle unit that is determined to be unsuitable for use in step S7 is a temporary failure or a fixed failure. For example, even if a predetermined number of times, for example, five repair processes are performed, and the failure is not restored, it is determined to be a fixed failure. When the number of repair processes is four or less, it is determined to be a temporary failure.
判定為暫時性故障時,步驟S9中進行修復處理。該修復處理利用修復裝置37(第1圖)進行。修復裝置37 例如用橡膠製刷子拂拭噴嘴面,或者吸引噴嘴孔中堵塞之樹脂。若修復處理結束,則返回到步驟S1。When it is determined that it is a temporary failure, the repair processing is performed in step S9. This repair process is performed by the repair device 37 (Fig. 1). Repair device 37 For example, a rubber brush is used to wipe the nozzle surface or to attract a resin that is clogged in the nozzle hole. If the repair process ends, the process returns to step S1.
當步驟S7中判定為固定性故障時,步驟S10中從輸出裝置36發出故障警報。發出故障警報之後,步驟S11中成為重啟動等待狀態。並且,步驟S5中判定為有暫時停止要求時,步驟S11中亦成為重啟動等待狀態。若成為重啟動等待,則將記憶裝置34的暫時停止要求標誌設為“無要求”狀態。When it is determined in step S7 that it is a fixed failure, a failure alarm is issued from the output device 36 in step S10. After the failure alarm is issued, the restart wait state is reached in step S11. When it is determined in step S5 that there is a temporary stop request, the step S11 also becomes a restart wait state. If it is a restart wait, the temporary stop request flag of the memory device 34 is set to the "no request" state.
第7圖C中示出步驟S11的順序的流程圖。另外,該順序並不是用控制裝置33(第1圖)執行,而是由操作人員介入執行。步驟SB1中,拆卸判定為固定性故障之噴嘴單元40或者在已拆卸噴嘴單元40之部位安裝新的噴嘴單元40。新的噴嘴單元40可以為修理暫且判定為固定性故障之噴嘴單元40者,亦可為未使用的噴嘴單元40。A flowchart of the sequence of step S11 is shown in Fig. 7C. In addition, this sequence is not performed by the control device 33 (Fig. 1), but is performed by the operator. In step SB1, the nozzle unit 40 determined to be a fixed failure is detached or a new nozzle unit 40 is attached to the portion where the nozzle unit 40 has been detached. The new nozzle unit 40 may be a nozzle unit 40 that is temporarily determined to be a fixed failure, or may be an unused nozzle unit 40.
若完成判定為固定性故障之噴嘴單元40的拆卸或者新的噴嘴單元40的安裝,則步驟SB2中,操作人員從輸入裝置35(第1圖)指示控制裝置33重啟動。另外,可進行判定為固定性故障之噴嘴單元40的拆卸與新的噴嘴單元40的安裝雙方。When the disassembly of the nozzle unit 40 determined to be a fixed failure or the installation of the new nozzle unit 40 is completed, the operator instructs the control device 33 to restart from the input device 35 (Fig. 1) in step SB2. Further, both the detachment of the nozzle unit 40 determined to be a fixed failure and the installation of the new nozzle unit 40 can be performed.
若指示重啟動,則返回到第7圖A所示之步驟S1,開始形成檢查圖案。另外,當基板50的未使用區域52的一部份區域已形成有檢查圖案時,在還未形成檢查圖案之區域重新形成檢查圖案。When the restart is instructed, the process returns to step S1 shown in Fig. 7 to start the formation of the inspection pattern. Further, when a portion of the unused region 52 of the substrate 50 has been formed with the inspection pattern, the inspection pattern is newly formed in the region where the inspection pattern has not been formed.
接著,對實施例1的變形例進行說明。上述實施例1中,在步驟S10(第7圖A)中發出故障警報之後成為重啟動等待。若成為重啟動等待,則需要操作人員的介入。變形例中,發出故障警報之後將判定為固定性故障之噴嘴單元40設為不可使用狀態並返回到步驟S1。在步驟S1的檢查圖案形成時及步驟S4的薄膜形成時,不向設為不可使用狀態之噴嘴單元40發送吐出信號。亦即,操作人員不介入亦可繼續進行薄膜的形成處理。當拆卸判定為固定故障之噴嘴單元40時,操作人員從輸入裝置35輸入暫時停止要求即可。Next, a modification of the first embodiment will be described. In the first embodiment described above, after the failure alarm is issued in step S10 (Fig. 7A), the restart waits. If it becomes a restart wait, the intervention of the operator is required. In the modified example, after the failure alarm is issued, the nozzle unit 40 determined to be a fixed failure is set to the unusable state, and the process returns to step S1. When the inspection pattern is formed in step S1 and the film formation in step S4 is performed, the discharge signal is not transmitted to the nozzle unit 40 that is in an unusable state. That is, the operator can continue the film formation process without intervening. When the nozzle unit 40 determined to be a fixed failure is disassembled, the operator inputs a temporary stop request from the input device 35.
接著,對上述實施例1的效果進行說明。Next, the effect of the above embodiment 1 will be described.
第9圖A中示出應形成之薄膜圖案的一部份。薄膜材料附著之區域75內配置有開口76。銅等的導電膜在開口76內暴露。該導電膜上焊接電子組件。A portion of the film pattern to be formed is shown in Fig. 9A. An opening 76 is disposed in the region 75 where the film material adheres. A conductive film of copper or the like is exposed in the opening 76. An electronic component is soldered on the conductive film.
第9圖B中示出在存在不良噴嘴孔之狀態下亦對不良噴嘴孔發送吐出信號來形成之薄膜圖案的一例。開口76內附著有稱為輔體(satellite)77之絕緣膜。輔體77藉由從不良噴嘴孔在異常時刻吐出之薄膜材料或朝向與正常方向不同之方向吐出之薄膜材料附著而形成。形成有輔體77之開口76因難以融合焊接而易產生焊接不良。FIG. 9B shows an example of a thin film pattern formed by transmitting a discharge signal to a defective nozzle hole in the presence of a defective nozzle hole. An insulating film called a saddle 77 is attached to the opening 76. The auxiliary body 77 is formed by adhering a film material discharged from an abnormal nozzle hole at an abnormal time or to a film material discharged in a direction different from the normal direction. The opening 76 in which the auxiliary body 77 is formed is liable to cause welding failure due to difficulty in fusion welding.
實施例1中,由於不向不良噴嘴孔發送吐出信號,所以能夠防止產生輔體77。存在不良噴嘴孔時,由於繼續進行薄膜材料的吐出,所以亦能夠抑制裝置的運轉率下降。In the first embodiment, since the discharge signal is not transmitted to the defective nozzle hole, the auxiliary body 77 can be prevented from being generated. When there is a defective nozzle hole, since the discharge of the film material is continued, it is also possible to suppress a decrease in the operation rate of the device.
另外,在不輸入吐出信號之狀態下亦有時產生如薄膜材料從噴嘴孔垂落之類的不良。若產生這種不良情況,則即使不向不良噴嘴孔發送吐出信號亦可導致形成輔體77。如此,導致薄膜材料垂落之類的不良情況可由檢查圖案的形狀判定。當依檢查圖案的形狀判斷為已產生如即使不發送吐出信號亦導致形成輔體之類的不良情況時,步驟S3(第7圖A)中與不良噴嘴孔的個數無關地判定為有不適合使用之噴嘴單元,並執行步驟S7的處理。Further, a defect such as a film material falling from the nozzle hole may occur in a state where the discharge signal is not input. If such a problem occurs, the auxiliary body 77 can be formed even if the discharge signal is not sent to the defective nozzle hole. Thus, a defect such as a drooping of the film material can be determined by the shape of the inspection pattern. When it is determined that the shape of the inspection pattern has occurred, such as a failure to form an auxiliary body even if the ejection signal is not transmitted, it is determined that the number of defective nozzle holes is unsuitable irrespective of the number of defective nozzle holes in step S3 (Fig. 7A). The nozzle unit is used, and the processing of step S7 is performed.
並且,實施例1中,即使在拆卸一部份噴嘴單元40之狀態下亦能夠使用剩餘的噴嘴單元40繼續吐出薄膜材料。因此,能夠提高薄膜圖案形成裝置的運轉率。Further, in the first embodiment, the remaining nozzle unit 40 can continue to discharge the film material even in a state in which a part of the nozzle unit 40 is detached. Therefore, the operation rate of the thin film pattern forming apparatus can be improved.
上述實施例1中,對於每一形成薄膜圖案之基板50形成檢查圖案並檢查噴嘴是否良好。亦可對於每一基板50的輥形成檢查圖案檢查噴嘴孔是否良好,來代替對於每一基板50檢查噴嘴孔是否良好。In the above-described Embodiment 1, an inspection pattern is formed for each substrate 50 on which the thin film pattern is formed and it is checked whether the nozzle is good. It is also possible to check whether the nozzle holes are good for the inspection pattern of the rolls of each of the substrates 50, instead of checking whether the nozzle holes are good for each of the substrates 50.
第10圖中示出基於實施例2之薄膜形成裝置的概要圖。載物台25上安裝有拍攝裝置80。藉由移動載物台25並將拍攝裝置80配置在噴嘴單元40的正下方,藉此能夠用拍攝裝置80拍攝噴嘴單元40的複數個噴嘴孔中的一部份噴嘴孔。其他結構與第1圖所示之基於實施例1之薄膜形成裝置的結構相同。另外,實施例1中,在噴嘴單元支撐機構65上安裝有複數個噴嘴單元40。實施例2的說明 中,對在噴嘴單元支撐機構65上安裝有1個噴嘴單元40之例子進行說明。另外,實施例2中亦與實施例1相同地,可在噴嘴單元支撐機構65上安裝複數個噴嘴單元40。以下,對與實施例1相同的結構省略說明。Fig. 10 is a schematic view showing a film forming apparatus based on Example 2. An imaging device 80 is mounted on the stage 25. By moving the stage 25 and disposing the imaging device 80 directly under the nozzle unit 40, a part of the plurality of nozzle holes of the nozzle unit 40 can be imaged by the imaging device 80. The other structure is the same as that of the film forming apparatus according to the first embodiment shown in Fig. 1. Further, in the first embodiment, a plurality of nozzle units 40 are attached to the nozzle unit supporting mechanism 65. Description of Embodiment 2 In the example, an example in which one nozzle unit 40 is attached to the nozzle unit support mechanism 65 will be described. Further, in the second embodiment, as in the first embodiment, a plurality of nozzle units 40 can be attached to the nozzle unit supporting mechanism 65. Hereinafter, the same configurations as those of the first embodiment will be omitted.
第11圖中示出基於實施例2之薄膜形成裝置的載物台25、噴嘴單元40、噴嘴單元支撐機構65的立體圖。載物台25的保持面上保持有基板50。基板50的上方支撐有噴嘴單元40。噴嘴單元40包括噴嘴夾具41及固定於噴嘴夾具41之複數個噴頭42。噴頭42的與基板50對置之面設置有複數個噴嘴孔。Fig. 11 is a perspective view showing the stage 25, the nozzle unit 40, and the nozzle unit supporting mechanism 65 of the film forming apparatus of the second embodiment. The substrate 50 is held on the holding surface of the stage 25. A nozzle unit 40 is supported above the substrate 50. The nozzle unit 40 includes a nozzle holder 41 and a plurality of heads 42 fixed to the nozzle holder 41. A plurality of nozzle holes are provided on the surface of the head 42 opposite to the substrate 50.
噴嘴單元支撐機構65包括測角儀47及昇降機構48。測角儀47能夠在一定角度範圍內以與Z軸平行的軸作為旋轉中心旋轉噴嘴單元40。昇降機構48向Z方向移動噴嘴單元40。The nozzle unit support mechanism 65 includes a goniometer 47 and a lifting mechanism 48. The goniometer 47 is capable of rotating the nozzle unit 40 as a center of rotation with an axis parallel to the Z axis within a certain angular range. The lifting mechanism 48 moves the nozzle unit 40 in the Z direction.
載物台25的邊緣安裝有拍攝裝置80。拍攝裝置80使用例如CCD照相機等。移動載物台25並將拍攝裝置80配置在噴嘴單元40的正下方,藉此能夠拍攝一部份噴嘴孔。藉由控制裝置33控制拍攝裝置80,並向控制裝置33輸入拍攝之圖像資料。另外,作為拍攝裝置80可使用線性感測器。當利用線性感測器時,控制裝置33一邊移動載物台25一邊獲取複數條一維圖像。能夠合成獲取之複數條一維圖像來生成二維圖像。An imaging device 80 is attached to the edge of the stage 25. The imaging device 80 uses, for example, a CCD camera or the like. The stage 25 is moved and the imaging device 80 is disposed directly under the nozzle unit 40, whereby a part of the nozzle holes can be captured. The photographing device 80 is controlled by the control device 33, and the photographed image data is input to the control device 33. In addition, as the imaging device 80, a line sensor can be used. When the line sensor is used, the control device 33 acquires a plurality of one-dimensional images while moving the stage 25. A plurality of acquired one-dimensional images can be synthesized to generate a two-dimensional image.
照明裝置81照明拍攝範圍內的噴嘴孔。作為照明方法,可採用例如同軸落射照明。照明光僅包含不使液狀薄 膜材料固化之波長域,而不包含使薄膜材料固化之紫外域的波長。The illumination device 81 illuminates the nozzle holes in the shooting range. As the illumination method, for example, coaxial epi-illumination can be employed. Illumination light only contains no liquid thin The wavelength domain in which the film material cures, without the wavelength of the ultraviolet region that cures the film material.
載物台25上進一步安裝有修復裝置37。向噴嘴單元40的下方移動修復裝置37,藉此恢復噴嘴孔的堵塞等。藉由控制裝置33控制修復裝置37。作為噴嘴孔堵塞的恢復方法,例如可舉出凈化、吸引、擦拭等。A repairing device 37 is further mounted on the stage 25. The repairing device 37 is moved below the nozzle unit 40, thereby clogging the nozzle holes and the like. The repairing device 37 is controlled by the control device 33. Examples of the method of recovering the nozzle hole clogging include purification, suction, wiping, and the like.
若進行凈化,則從噴嘴孔流出液狀薄膜材料。修復裝置37上配置有接受從噴嘴孔流出之薄膜材料之托盤。修復裝置37中容納有向噴嘴孔外加負壓之吸引裝置。另外,修復裝置37中具備有用於拂拭噴頭42的刷子。When purifying, the liquid film material flows out from the nozzle holes. The repairing device 37 is provided with a tray that receives the film material flowing out of the nozzle holes. The repairing device 37 houses a suction device that applies a negative pressure to the nozzle hole. Further, the repairing device 37 is provided with a brush for wiping the head 42.
第12圖A中示出形成於基板50上之薄膜圖案53的俯視圖。例如薄膜圖案53由以行列狀配置之複數個全等的圖案構成。形成之薄膜圖案53的圖像資料記憶於控制裝置33(第10圖)。若在一部份噴嘴孔45(第2圖A、第2圖B)產生噴嘴孔堵塞等不良情況,則如第12圖B所示,出現與X方向平行的直線狀的不良部位38。A plan view of the thin film pattern 53 formed on the substrate 50 is shown in Fig. 12A. For example, the thin film pattern 53 is composed of a plurality of congruent patterns arranged in a matrix. The image data of the formed thin film pattern 53 is stored in the control device 33 (Fig. 10). When a problem occurs such as clogging of the nozzle hole in a part of the nozzle holes 45 (Fig. 2A and Fig. 2B), as shown in Fig. 12B, a linear defective portion 38 parallel to the X direction appears.
第13圖中示出基於實施例2之薄膜形成裝置的修理方法的流程圖。如第12圖B所示,若在形成之薄膜圖案53出現不良部位38,則步驟SC1中由不良部位38的位置推斷認為不良之噴嘴孔45(第2圖A、第2圖B)的Y方向的位置。但是,雖然僅由不良部位38的位置能夠將認為不良之噴嘴孔的位置限制在一定區域內,但很難特定產生不良之噴嘴孔45(不良噴嘴孔)。將推斷為存在不良噴嘴孔之區域稱為“可疑區域”。可疑區域中包含複數 個噴嘴孔。並且,亦很難特定不良噴嘴孔45所屬之噴頭42,所以對每個噴頭42定義可疑區域。Fig. 13 is a flow chart showing a repair method of the thin film forming apparatus of the second embodiment. As shown in Fig. 12B, when the defective portion 38 appears in the formed thin film pattern 53, the Y of the nozzle hole 45 (Fig. 2, Fig. 2B) which is considered to be defective is estimated from the position of the defective portion 38 in step SC1. The position of the direction. However, although the position of the nozzle hole which is considered to be defective can be restricted to a certain area only by the position of the defective portion 38, it is difficult to specify the nozzle hole 45 (poor nozzle hole) which is defective. The area inferred to have a defective nozzle hole is referred to as a "suspicious area". Suspicious area contains plural Nozzle holes. Further, it is also difficult to specify the head 42 to which the defective nozzle hole 45 belongs, so that a suspicious area is defined for each head 42.
步驟SC2中,用拍攝裝置80(第10圖、第11圖)拍攝各個噴頭42的可疑區域。具體而言,操作人員從輸入裝置35(第10圖)輸入可疑區域的Y方向的位置情報。該位置情報可以為以第2圖B所示之噴頭42為基準之位置情報,亦可以為以第12圖B所示之基板50為基準之位置情報。當輸入以基板50為基準之位置情報時,控制裝置33(第10圖)從以基板50為基準之位置情報轉換成以噴頭42為基準之位置情報。如第14圖所示,控制裝置33移動載物台25,並將拍攝裝置80移動至各個噴頭42的可疑區域正下方。In step SC2, the suspicious area of each of the heads 42 is imaged by the imaging device 80 (Fig. 10, Fig. 11). Specifically, the operator inputs the position information in the Y direction of the suspicious area from the input device 35 (Fig. 10). The position information may be position information based on the head 42 shown in FIG. 2B, or may be position information based on the substrate 50 shown in FIG. 12B. When the position information based on the substrate 50 is input, the control device 33 (Fig. 10) converts the position information based on the substrate 50 into position information based on the head 42. As shown in Fig. 14, the control device 33 moves the stage 25 and moves the imaging device 80 directly below the suspicious area of each of the heads 42.
另外,亦可採用自動檢測可疑區域的位置之方法來代替操作人員輸入可疑區域的位置情報。接著,對自動檢測可疑區域的位置之方法進行說明。首先,在基板50上形成薄膜圖案53(第12圖A)之後用拍攝裝置32(第10圖)拍攝薄膜圖案53。藉由自動分析拍攝之圖像來判定是否存在不良部位38(第12圖B)。當檢測到不良部位38時依不良部位38的位置計算可疑區域的位置。In addition, the method of automatically detecting the position of the suspicious area may be used instead of the operator inputting the location information of the suspicious area. Next, a method of automatically detecting the position of the suspicious area will be described. First, after the thin film pattern 53 (Fig. 12A) is formed on the substrate 50, the thin film pattern 53 is imaged by the imaging device 32 (Fig. 10). Whether or not the defective portion 38 is present is determined by automatically analyzing the captured image (Fig. 12B). When the defective portion 38 is detected, the position of the suspicious region is calculated based on the position of the defective portion 38.
第15圖中示出噴嘴孔45與拍攝裝置80(第14圖)的拍攝範圍82的位置關係。例如,在拍攝範圍82內容納屬於1個噴頭42之3~4個噴嘴孔45。能夠藉由向X方向移動載物台25(第14圖)來使4個噴頭42的可疑區域依次容納於拍攝範圍82內並進行拍攝。控制裝置33在 輸出裝置36顯示拍攝之圖像。Fig. 15 shows the positional relationship between the nozzle hole 45 and the imaging range 82 of the imaging device 80 (Fig. 14). For example, three to four nozzle holes 45 belonging to one head 42 are accommodated in the imaging range 82. By moving the stage 25 (Fig. 14) in the X direction, the suspicious regions of the four heads 42 can be sequentially accommodated in the imaging range 82 and imaged. Control device 33 is The output device 36 displays the captured image.
步驟SC3中,操作人員藉由觀察顯示於輸出裝置36之圖像來特定不良噴嘴孔及存在不良噴嘴孔之噴頭42。步驟S4中,操作人員判定不良噴嘴孔45是否可恢復。例如,當氣泡滯留在不良噴嘴孔45內時、微小異物殘置於不良噴嘴孔45內時等,判定不良噴嘴孔45可恢復。當薄膜材料在不良噴嘴孔45內固化時、不良噴嘴孔45變形時等,判定不良噴嘴孔不能恢復。In step SC3, the operator specifies the defective nozzle hole and the head 42 having the defective nozzle hole by observing the image displayed on the output device 36. In step S4, the operator determines whether or not the defective nozzle hole 45 is recoverable. For example, when the air bubbles remain in the defective nozzle hole 45 and the minute foreign matter remains in the defective nozzle hole 45, it is determined that the defective nozzle hole 45 can be recovered. When the film material is solidified in the defective nozzle hole 45, the defective nozzle hole 45 is deformed, or the like, it is determined that the defective nozzle hole cannot be recovered.
當判定不良噴嘴孔45能夠恢復時,步驟SC9中將不良噴嘴孔45所屬之噴頭42更換成新的噴頭。當在步驟SC4中判定為能夠恢復的不良時,步驟SC5中操作人員從輸入裝置35輸入特定不良噴嘴孔45之情報及執行修復處理之指令。特定不良噴嘴孔45之情報包括特定噴頭42之情報及特定噴頭42內的噴嘴孔45之情報。When it is determined that the defective nozzle hole 45 can be restored, the head 42 to which the defective nozzle hole 45 belongs is replaced with a new head in step SC9. When it is determined in step SC4 that the recovery is impossible, the operator inputs the information of the specific defective nozzle hole 45 and the instruction to execute the repair process from the input device 35 in step SC5. The information for the particular defective nozzle aperture 45 includes information for the particular nozzle 42 and information for the nozzle aperture 45 within the particular nozzle 42.
步驟SC6中,控制裝置33(第10圖)對不良噴嘴孔45進行修復處理。具體而言,將修復裝置37(第11圖)移動至不良噴嘴孔45的正下方。之後,進行吸引、擦拭、凈化等。吸引僅對不良噴嘴孔45或對其附近的噴嘴孔進行。擦拭及凈化對不良噴嘴孔45所屬之噴頭42進行。In step SC6, the control device 33 (Fig. 10) performs a repair process on the defective nozzle hole 45. Specifically, the repairing device 37 (Fig. 11) is moved directly below the defective nozzle hole 45. After that, suction, wiping, purification, and the like are performed. The suction is performed only on the defective nozzle hole 45 or the nozzle hole in the vicinity thereof. Wiping and purging is performed on the head 42 to which the defective nozzle hole 45 belongs.
若修復處理結束,則步驟SC7中用拍攝裝置80(第14圖)拍攝修復處理後的噴嘴孔45。控制裝置33將獲取之圖像顯示於輸出裝置36(第10圖)。步驟SC8中,操作人員藉由觀察顯示於輸出裝置36之圖像來判定噴嘴孔45的不良是否已恢復。當判定不良已恢復時,結束修復 處理。當判定未恢復不良時,步驟S9中,將包括不良噴嘴孔45之噴頭42更換成新的噴頭。When the repair process is completed, the nozzle hole 45 after the repair process is imaged by the image pickup device 80 (Fig. 14) in step SC7. The control device 33 displays the acquired image on the output device 36 (Fig. 10). In step SC8, the operator determines whether or not the defect of the nozzle hole 45 has been restored by observing the image displayed on the output device 36. End the repair when the judgment is recovered deal with. When it is determined that the failure is not restored, in step S9, the head 42 including the defective nozzle hole 45 is replaced with a new head.
上述實施例2中,無需從噴嘴夾具41拆卸噴頭42就能夠用拍攝裝置80(第10圖、第11圖)觀察噴嘴孔45(第15圖)。因此,當在薄膜圖案53出現不良部位38(第12圖B)時,能夠輕鬆地特定不良噴嘴孔的狀態及位置。藉此,能夠縮短修復處理的時間。In the second embodiment described above, the nozzle hole 45 (Fig. 15) can be observed by the imaging device 80 (Fig. 10, Fig. 11) without removing the head 42 from the nozzle jig 41. Therefore, when the defective portion 38 (Fig. 12B) appears in the film pattern 53, the state and position of the defective nozzle hole can be easily specified. Thereby, the time for the repair process can be shortened.
並且,在步驟SC6(第13圖)中進行之擦拭亦有時使不良噴嘴孔45恢復,但是相反地,亦可成為堵塞正常噴嘴孔45之主要原因。實施例2中,僅對不良噴嘴孔45所屬之噴頭42進行擦拭,而對正常的噴頭42不進行擦拭。因此,能夠防止起因於擦拭之不良產生。Further, the wiping performed in step SC6 (Fig. 13) may restore the defective nozzle hole 45, but conversely, it may be a cause of clogging the normal nozzle hole 45. In the second embodiment, only the head 42 to which the defective nozzle hole 45 belongs is wiped, and the normal head 42 is not wiped. Therefore, it is possible to prevent the occurrence of defects due to wiping.
上述實施例2中,步驟SC3(第13圖)中操作人員藉由觀察噴嘴孔的圖像來特定產生不良之噴嘴孔45。亦可藉由由控制裝置33(第10圖)進行自動圖像分析而無需操作人員介入來特定產生不良之噴嘴孔45且判定是否能夠恢復。蓄積各種不良噴嘴孔的圖像資料及是否能夠恢復的情報,藉此能夠進行圖像的自動分析。In the above-described second embodiment, the operator in step SC3 (Fig. 13) specifies the nozzle hole 45 which is defective by observing the image of the nozzle hole. It is also possible to perform automatic image analysis by the control device 33 (Fig. 10) without specifying an operator's intervention to specify a defective nozzle hole 45 and determine whether or not it is possible to recover. Automatic analysis of images can be performed by accumulating image data of various defective nozzle holes and information on whether or not it is possible to recover.
並且,上述實施例2中,為了特定產生不良之噴嘴孔45而使用拍攝裝置80(第10圖、第11圖)。可將拍攝裝置80設為更低倍率來實現噴頭42的更寬表面的觀察。藉此,能夠觀察噴頭42表面的污染狀態。Further, in the second embodiment described above, the imaging device 80 (Fig. 10, Fig. 11) is used to specify the nozzle hole 45 in which the defect has occurred. The observation of the wider surface of the head 42 can be achieved by setting the camera 80 to a lower magnification. Thereby, the state of contamination of the surface of the head 42 can be observed.
上述實施例2中,如第11圖所示,將拍攝裝置80及修復裝置37安裝於基板50用載物台25上,但是除了基 板50用載物台25之外,還可配置拍攝裝置80及修復裝置37用載物台。藉此,能夠減輕基板50用載物台25的重量。並且,可構成為將拍攝裝置80及修復裝置37固定於平板20(第1圖),並將噴嘴單元40移動至拍攝裝置80或修復裝置37的上方。In the second embodiment described above, as shown in FIG. 11, the imaging device 80 and the repairing device 37 are mounted on the stage 50 for the substrate 50, except for the base. In addition to the stage 25 for the board 50, the stage for the imaging device 80 and the repairing device 37 may be disposed. Thereby, the weight of the stage 25 for the substrate 50 can be reduced. Further, the imaging device 80 and the repairing device 37 may be fixed to the flat plate 20 (first drawing), and the nozzle unit 40 may be moved above the imaging device 80 or the repairing device 37.
接著,參閱第16圖,對基於實施例2的變形例之薄膜形成裝置的調整方法進行說明。該調整方法中,在第11圖所示之噴嘴夾具41上安裝複數個噴頭42之後調整複數個噴頭42的相對位置。Next, a method of adjusting the film forming apparatus according to the modification of the second embodiment will be described with reference to Fig. 16. In this adjustment method, a plurality of heads 42 are attached to the nozzle holder 41 shown in Fig. 11, and the relative positions of the plurality of heads 42 are adjusted.
如第16圖所示,以1個噴頭42的成為基準之噴嘴孔(以下稱為“基準噴嘴孔”)55r包含於拍攝裝置80的拍攝範圍82內之方式移動拍攝裝置80並獲取圖像。同樣地,拍攝另一噴頭42的基準噴嘴孔45r。As shown in FIG. 16, the imaging device 80 is moved and the image is acquired such that the nozzle hole (hereinafter referred to as "reference nozzle hole") 55r serving as the reference of the one head 42 is included in the imaging range 82 of the imaging device 80. Similarly, the reference nozzle hole 45r of the other head 42 is taken.
藉由分析拍攝之圖像來求出複數個噴頭42的基準噴嘴孔45r的相對位置關係。依計算結果,調整噴頭42的相對位置,以便基準噴嘴孔45r配置於作為目標之位置。噴頭42位置的微調能夠藉由微調螺栓等進行。The relative positional relationship of the reference nozzle holes 45r of the plurality of heads 42 is obtained by analyzing the captured images. According to the calculation result, the relative position of the head 42 is adjusted so that the reference nozzle hole 45r is disposed at the target position. The fine adjustment of the position of the head 42 can be performed by fine-tuning a bolt or the like.
如第17圖所示,可將相互鄰接之2個噴頭42的邊緣(edge)配置於可拍攝範圍52內,並拍攝噴頭42的邊緣。能夠藉由分析拍攝之圖像來檢測噴頭42的邊緣,並求出複數個噴頭42的相對位置關係。As shown in Fig. 17, the edges of the two heads 42 adjacent to each other can be placed in the image captureable range 52, and the edge of the head 42 can be photographed. The edge of the head 42 can be detected by analyzing the captured image, and the relative positional relationship of the plurality of heads 42 can be determined.
第18圖示出基於實施例3之包括液滴吐出裝置之薄 膜形成裝置171的概要圖。薄膜形成裝置171包括配置於筐體118內部之對準站102、檢查成膜站103、基板反轉站104、對準站105、檢查成膜站106、紫外線照射裝置108及提昇器111~114。並且,薄膜形成裝置171的筐體118上設置有基板搬入口101及基板搬出口107。薄膜形成裝置171為了在作為例如矩形狀的印刷配線板之基板121~127的表面及背面形成阻焊抗蝕劑等薄膜圖案而使用。薄膜形成裝置171包括輸送帶115、輸送帶116及控制裝置120。基板121~127從筐體118的外部至內部的移動藉由輸送帶115進行。基板121~127在筐體118的內部中的輸送利用提昇器111~114進行。輸送帶116將基板121~127從筐體118內搬出至筐體118的外部。藉由控制裝置120控制筐體118的內部的各種設備的動作及輸送帶115、輸送帶116的動作。控制裝置120包括記憶裝置120a。輸送至筐體118的內部之基板121~127的表面朝向附圖的上方向(Z軸正方向)。Figure 18 shows a thin film including a droplet discharge device based on Embodiment 3. A schematic view of the film forming apparatus 171. The film forming apparatus 171 includes an alignment station 102 disposed inside the casing 118, an inspection film formation station 103, a substrate reversing station 104, an alignment station 105, an inspection film formation station 106, an ultraviolet irradiation device 108, and lifters 111 to 114. . Further, the casing 118 of the film forming apparatus 171 is provided with a substrate transfer port 101 and a substrate transfer port 107. The film forming apparatus 171 is used to form a film pattern such as a solder resist on the front and back surfaces of the substrates 121 to 127 which are, for example, rectangular printed wiring boards. The film forming apparatus 171 includes a conveyor belt 115, a conveyor belt 116, and a control device 120. The movement of the substrates 121 to 127 from the outside to the inside of the casing 118 is performed by the conveyor belt 115. The conveyance of the substrates 121 to 127 in the inside of the casing 118 is performed by the lifters 111 to 114. The conveyor belt 116 carries the substrates 121 to 127 from the inside of the casing 118 to the outside of the casing 118. The operation of the various devices inside the casing 118 and the operation of the conveyor belt 115 and the conveyor belt 116 are controlled by the control device 120. Control device 120 includes a memory device 120a. The surfaces of the substrates 121 to 127 which are conveyed to the inside of the casing 118 are directed in the upward direction of the drawing (the positive direction of the Z-axis).
本說明書中,劃分以鉛垂上方設為Z軸正方向之右手系的正交坐標系。以下說明中,從對準站102到檢查成膜站106的5個站依次朝向Y軸正方向配置,通過基板搬入口101搬入筐體118內之基板121~127經由各站102~106,整體朝向Y軸正方向輸送,並通過基板搬出口107向筐體118的外部搬出。In the present specification, the orthogonal coordinate system of the right-handed system in which the vertical direction is the Z-axis positive direction is divided. In the following description, the five stations from the alignment station 102 to the inspection film formation station 106 are sequentially arranged in the positive direction of the Y-axis, and the substrates 121 to 127 carried in the casing 118 through the substrate transfer inlet 101 are passed through the respective stations 102 to 106. The conveyance is carried in the positive direction of the Y-axis, and is carried out to the outside of the casing 118 through the substrate discharge port 107.
薄膜形成裝置171中,由對準站102、檢查成膜站103、基板反轉站104、對準站105、檢查成膜站106的各 站並行進行處理。因此,能夠實現生產效率的提高。In the thin film forming apparatus 171, each of the alignment station 102, the inspection film formation station 103, the substrate inversion station 104, the alignment station 105, and the inspection film formation station 106 The stations process in parallel. Therefore, it is possible to achieve an increase in production efficiency.
參閱第19圖A~第19圖C,對對準站102進行說明。第19圖A顯示儲存於對準站102之對準裝置的概要圖。對準裝置包括從底座131側依次配置於底座(基座)131上之X載物台132、θ 載物台133、卡盤板134。卡盤板134藉由提昇器111吸附保持輸送至對準站102之基板122。The alignment station 102 will be described with reference to Figs. 19A to 19C. Figure 19A shows an overview of the alignment device stored at the alignment station 102. The alignment device includes an X stage 132, a θ stage 133, and a chuck plate 134 which are disposed on the base (base) 131 in this order from the base 131 side. The chuck plate 134 is adsorbed and held by the lifter 111 to the substrate 122 of the alignment station 102.
X載物台132能夠向X軸方向移動被保持之基板122。θ 載物台133能夠在與XY平面平行的面內圍繞與Z軸平行的旋轉軸的周圍旋轉被保持之基板122。X載物台132、θ 載物台133及卡盤板134構成保持基板122並在對準站102內移動之移動載物台。基於卡盤板134之基板122的吸附、基於X載物台132及θ 載物台133之基板122的移動藉由控制裝置120控制。The X stage 132 is capable of moving the held substrate 122 in the X-axis direction. The θ stage 133 is capable of rotating the held substrate 122 around the rotation axis parallel to the Z axis in a plane parallel to the XY plane. The X stage 132, the θ stage 133, and the chuck plate 134 constitute a moving stage that holds the substrate 122 and moves inside the alignment station 102. The adsorption of the substrate 122 based on the chuck plate 134 and the movement of the substrate 122 based on the X stage 132 and the θ stage 133 are controlled by the control device 120.
並且,對準裝置包括CCD照相機135~138。CCD照相機135~138拍攝形成於保持在卡盤板134之基板122上之對準標誌。基於CCD照相機135~138之拍攝藉由控制裝置120控制。並且,藉由CCD照相機135~138獲得之圖像資料(檢測結果)發送至控制裝置120。Also, the alignment device includes CCD cameras 135 to 138. The CCD cameras 135 to 138 take an alignment mark formed on the substrate 122 held on the chuck plate 134. The shooting based on the CCD cameras 135 to 138 is controlled by the control device 120. Further, the image data (detection result) obtained by the CCD cameras 135 to 138 is transmitted to the control device 120.
第19圖B顯示輸送至對準站102並吸附保持於卡盤板134之基板122的俯視圖。例如,在基板122的表面的四角形成對準標誌122a~122d。FIG. 19B shows a plan view of the substrate 122 transported to the alignment station 102 and adsorbed and held on the chuck plate 134. For example, alignment marks 122a to 122d are formed at four corners of the surface of the substrate 122.
藉由提昇器111載置於卡盤板134上之基板122在吸附保持於卡盤板134之狀態下藉由X載物台132的驅動 在對準站102內向X軸的正方向移動。第19圖B中括號內示出移動之後的基板122。The substrate 122 placed on the chuck plate 134 by the lifter 111 is driven by the X stage 132 while being adsorbed and held by the chuck plate 134. Moving in the positive direction of the X-axis within the alignment station 102. The substrate 122 after the movement is shown in parentheses in Fig. 19B.
CCD照相機135~138配置於向X軸正方向移動之後的卡盤板134的上方。各CCD照相機135~138分別配置在能夠拍攝對準標誌122a~122d之位置。基板122藉由X載物台132移動至CCD照相機135~138的下方,CCD照相機135~138拍攝形成於基板122之對準標誌122a~122d。拍攝到之圖像資料發送至控制裝置120。The CCD cameras 135 to 138 are disposed above the chuck plate 134 after moving in the positive X-axis direction. Each of the CCD cameras 135 to 138 is disposed at a position where the alignment marks 122a to 122d can be photographed. The substrate 122 is moved below the CCD cameras 135 to 138 by the X stage 132, and the CCD cameras 135 to 138 image the alignment marks 122a to 122d formed on the substrate 122. The captured image data is sent to the control device 120.
控制裝置120處理藉由CCD照相機135~138獲取之圖像資料,掌握基板122的位置及XY平面內(基板122的面內)方向上的姿勢(方向)。之後,例如校正(變更)基板122在XY平面內方向上的姿勢(θ 校正)。The control device 120 processes the image data acquired by the CCD cameras 135 to 138, and grasps the position of the substrate 122 and the posture (direction) in the XY plane (in-plane direction of the substrate 122). Thereafter, for example, the posture of the substrate 122 in the XY plane direction ( θ correction) is corrected (changed).
第19圖B中示出在基板122的XY平面內向逆時針方向只位置偏離角度α之情況作為一例。此時,例如連結形成有對準標誌122a之頂點與形成有對準標誌122d之頂點之邊以後者的頂點為基準從Y軸的正方向向逆時針方向只傾斜角度α。控制裝置120依藉由CCD照相機135~138獲取之圖像資料掌握該位置偏離。控制裝置120藉由將θ 載物台133向順時針方向只旋轉角度α來修正該位置偏離。修正結果,矩形狀的基板122的各邊與X軸或Y軸平行。FIG. 19B shows an example in which the position is shifted from the angle α in the counterclockwise direction in the XY plane of the substrate 122 as an example. At this time, for example, the apex of the alignment mark 122a and the apex of the alignment mark 122d are connected to each other, and the apex of the latter is inclined by the angle α from the positive direction of the Y-axis to the counterclockwise direction. The control device 120 grasps the positional deviation based on the image data acquired by the CCD cameras 135 to 138. The control device 120 corrects the positional deviation by rotating the θ stage 133 only by the angle α in the clockwise direction. As a result of the correction, each side of the rectangular substrate 122 is parallel to the X-axis or the Y-axis.
如第19圖C所示,進行基板122的θ 校正之後,控制裝置120驅動X載物台132,並向X軸的負方向移動基板122。基板122的移動距離與例如在第19圖B所示之 製程中向X軸的正方向移動基板122之距離相等。As shown in FIG. 19C, after the θ correction of the substrate 122 is performed, the control device 120 drives the X stage 132 and moves the substrate 122 in the negative direction of the X-axis. The moving distance of the substrate 122 is equal to the distance of the substrate 122 moving in the positive direction of the X-axis, for example, in the process shown in FIG. 19B.
第19圖C的括號內示出向X軸的負方向移動之後的基板122。被實施θ 校正之基板122藉由提昇器111輸送至檢查成膜站103。提昇器111將藉由θ 載物台133的旋轉變更基板面內方向上的方向之基板122維持其方向來輸送至檢查成膜站103的載物台上。The substrate 122 after moving in the negative direction of the X-axis is shown in parentheses in Fig. 19C. The substrate 122 subjected to the θ correction is transported to the inspection film forming station 103 by the lifter 111. The lifter 111 conveys the direction of the substrate 122 in the direction in which the surface of the substrate is changed by the rotation of the θ stage 133 to the stage of the inspection film formation station 103.
由於已在對準站102完成θ 校正,所以無需在檢查成膜站103中進行基板122的位置校正就能夠開始向基板122表面形成薄膜圖案。例如,與在檢查成膜站103進行θ 校正之後形成薄膜圖案之情況相比,能夠縮短檢查成膜站103中的處理時間,甚至能夠實現縮短間隔時間以及提高生產效率。Since the θ correction has been completed at the alignment station 102, it is not necessary to form the film pattern on the surface of the substrate 122 without performing the positional correction of the substrate 122 in the inspection film formation station 103. For example, compared with the case where the thin film pattern is formed after the θ correction is performed by the film forming station 103, the processing time in the film forming station 103 can be shortened, and even the interval time can be shortened and the production efficiency can be improved.
另外,基板122上通常產生伸長應變,並在進行薄膜圖案的形成時刻基板122的尺寸與設計值不同。控制裝置120依在對準站102使用CCD照相機135~138獲取之圖像資料測定基板122的尺寸。在檢查成膜站103中在基板122上進行薄膜圖案的形成時,依測定之尺寸生成用於形成薄膜圖案的光柵格式的圖像資料。生成之圖像資料儲存於控制裝置120的記憶裝置120a。關於該順序在以下檢查成膜站103的說明中進行詳細敘述。Further, elongation strain is generally generated on the substrate 122, and the size of the substrate 122 is different from the design value at the time of forming the thin film pattern. The control device 120 measures the size of the substrate 122 in accordance with the image data acquired by the alignment station 102 using the CCD cameras 135 to 138. When the formation of the thin film pattern is performed on the substrate 122 in the inspection film formation station 103, image data of a raster format for forming a thin film pattern is generated in accordance with the measured size. The generated image data is stored in the memory device 120a of the control device 120. This sequence will be described in detail in the following description of the film formation station 103.
第20圖A及第20圖B顯示儲存於檢查成膜站103之液滴吐出裝置170的一部份的概要圖。如第20圖A所示,液滴吐出裝置170包括設置於與XY平面(水平面)平行的面內之底座141及從底座141側依次配置於底座 141上之Y載物台143、X載物台144、卡盤板145。卡盤板145藉由提昇器111吸附保持輸送至檢查成膜站103之基板123。20A and 20B show schematic views of a part of the droplet discharge device 170 stored in the inspection film formation station 103. As shown in FIG. 20A, the droplet discharge device 170 includes a base 141 provided in a plane parallel to the XY plane (horizontal plane) and arranged in order from the base 141 side. Y stage 143, X stage 144, and chuck plate 145 on 141. The chuck plate 145 is adsorbed and held by the lifter 111 to the substrate 123 of the inspection film forming station 103.
Y載物台143能夠向Y軸方向移動被保持之基板123。X載物台144能夠向X軸方向移動被保持之基板123。Y載物台143、X載物台144及卡盤板145構成配置於底座141上、保持基板123並在檢查成膜站103內移動基板123之移動載物台。基板123基於卡盤板145之吸附、基板123基於Y載物台143及X載物台144之移動接受控制裝置120的指令來進行。The Y stage 143 can move the held substrate 123 in the Y-axis direction. The X stage 144 is capable of moving the held substrate 123 in the X-axis direction. The Y stage 143, the X stage 144, and the chuck plate 145 constitute a moving stage disposed on the base 141, holding the substrate 123, and moving the substrate 123 in the inspection film formation station 103. The substrate 123 is carried out based on the adsorption of the chuck plate 145 and the substrate 123 is commanded by the movement control device 120 based on the movement of the Y stage 143 and the X stage 144.
另外,Y載物台143、X載物台144及卡盤板145可按此順序配置於上下方向,亦可使用具有Y載物台143、X載物台144、卡盤板145的功能之高功能載物台來實現移動載物台。Further, the Y stage 143, the X stage 144, and the chuck plate 145 may be arranged in the vertical direction in this order, and the function of the Y stage 143, the X stage 144, and the chuck plate 145 may be used. A high-performance stage for moving the stage.
噴嘴單元147a~147f可配置於卡盤板145的上方。噴嘴單元147a~147f藉由框架142固定於底座141。框架142包括固定於底座141之支柱142a、支柱142b及支撐於支柱142a、支柱142b之橫樑142c。The nozzle units 147a to 147f may be disposed above the chuck plate 145. The nozzle units 147a to 147f are fixed to the base 141 by a frame 142. The frame 142 includes a pillar 142a fixed to the base 141, a pillar 142b, and a beam 142c supported by the pillar 142a and the pillar 142b.
噴嘴單元147a~147f透過連結構件146保持於框架142的橫樑142c上。噴嘴單元147a~147f分別包括複數個噴頭及紫外光源。噴頭朝向保持於移動載物台之基板123的表面吐出例如紫外線固化型薄膜材料的液滴。一邊向X軸方向移動基板123一邊進行薄膜材料的吐出。藉由被吐出之薄膜材料在基板123的表面上形成薄膜圖案, 例如阻焊抗蝕劑的圖案。形成於基板123的表面之薄膜圖案藉由從紫外光源射出之紫外線固化(臨時固化)。The nozzle units 147a to 147f are held by the connecting member 146 on the beam 142c of the frame 142. The nozzle units 147a-147f respectively include a plurality of nozzles and an ultraviolet light source. The head discharges, for example, droplets of the ultraviolet curable film material toward the surface of the substrate 123 held on the moving stage. The film material is discharged while moving the substrate 123 in the X-axis direction. Forming a thin film pattern on the surface of the substrate 123 by the discharged film material, For example, a pattern of a solder resist. The film pattern formed on the surface of the substrate 123 is cured (temporarily cured) by ultraviolet rays emitted from an ultraviolet light source.
控制裝置120的記憶裝置120a中記憶有形成於基板123上之薄膜圖案的圖像資料(格伯資料)或顯示基板123基於移動載物台之移動量與來自噴頭的薄膜材料的吐出時期的關係(吐出定時)的資料。這些為設計時的資料(初始值)。控制裝置120由這些資料依在對準站102拍攝之基板123的圖像資料生成光柵格式的圖像資料(控制資料)。例如,控制裝置120由在對準站102拍攝之圖像資料計算基板123的X方向、Y方向的伸長應變。在Y方向上依基板123的Y方向的伸長應變校正著落薄膜材料的液滴之位置的坐標(格伯資料的校正)。在X方向上依基板123的X方向的伸長應變校正基板123基於X載物台144之移動量與來自噴頭的薄膜材料的吐出時期的關係(吐出定時)。如此,藉由校正預先記憶於記憶裝置120a之資料來獲得之控制資料保存於記憶裝置120a中。另外,在基板123的X方向上亦校正著落薄膜材料之位置的坐標而不是吐出定時(格伯資料的校正)。The image data (Gerber data) of the thin film pattern formed on the substrate 123 or the display substrate 123 is stored in the memory device 120a of the control device 120 based on the amount of movement of the moving stage and the discharge time of the film material from the head. (spit timing) information. These are the design data (initial values). The control device 120 generates image data (control data) in a raster format from the image data of the substrate 123 photographed by the alignment station 102 from these data. For example, the control device 120 calculates the elongation strain in the X direction and the Y direction of the substrate 123 from the image data captured by the alignment station 102. The coordinates of the position of the droplets of the falling film material (correction of the Gerber data) are corrected in the Y direction according to the elongation strain in the Y direction of the substrate 123. In the X direction, the elongation strain correction substrate 123 in the X direction of the substrate 123 is based on the relationship between the amount of movement of the X stage 144 and the discharge timing of the film material from the head (discharge timing). Thus, the control data obtained by correcting the data previously stored in the memory device 120a is stored in the memory device 120a. Further, the coordinates of the position of the falling film material are corrected in the X direction of the substrate 123 instead of the discharge timing (correction of the Gerber data).
參閱第28圖A及第28圖B,對格伯資料的校正的一例進行說明。第28圖A及第28圖B顯示由排列成行方向及列方向之複數個像元構成之光柵格式的圖像資料。兩圖中將應塗佈阻焊抗蝕劑之區域的像元塗黑來顯示。An example of the correction of the Gerber data will be described with reference to FIGS. 28A and 28B. Fig. 28A and Fig. 28B show image data of a raster format composed of a plurality of pixels arranged in a row direction and a column direction. In both figures, the pixels of the area where the solder resist should be applied are blacked out for display.
第28圖A顯示著落薄膜材料之位置的設計值(初始值)。用實線描繪之圓的外側的像元作為應塗佈薄膜材料 之區域記憶於記憶裝置20a中。Fig. 28A shows the design value (initial value) of the position of the landing film material. The pixel on the outer side of the circle depicted by the solid line is used as the film material to be coated The area is memorized in the memory device 20a.
例如,假設X方向的長度為lX 、Y方向的長度為lY 之矩形狀的基板123的X方向的伸長度為△X、Y方向的伸長度為△Y。若在整個基板123上均勻地產生伸長度,則在X方向、Y方向上每單位長度的伸長度成為△X/lX 、△Y/lY 。第28圖A的圓周及內部(未塗佈薄膜材料之區域)依應變量擴大。亦即,在基板123上,由於應塗佈薄膜材料之位置變化,因此控制裝置120校正應塗佈薄膜材料之位置的坐標(像元)。For example, assume the X-direction length L X, Y longitudinal direction is the X-direction elongation L of the rectangular substrate 123 of the Y △ X, Y-direction elongation of △ Y. When the elongation is uniformly generated over the entire substrate 123, the elongation per unit length in the X direction and the Y direction is ΔX/l X and ΔY/l Y . The circumference and the inside of the Fig. 28A (the area of the uncoated film material) are expanded in accordance with the variables. That is, on the substrate 123, since the position of the film material to be coated changes, the control device 120 corrects the coordinates (pixels) of the position at which the film material should be applied.
在第28圖B中示出校正後的光柵格式的圖像資料。例如在第28圖B中用實線描繪之圓周外側的像元成為校正後的應塗佈薄膜材料之區域。在第28圖A中用實線描繪之圓周在第28圖B中作為參閱用虛線顯示。例如,第28圖B中示出之圖像資料作為薄膜圖案形成時的控制資料重新記憶在記憶裝置120a中。The image data of the corrected raster format is shown in Fig. 28B. For example, the pixel on the outer side of the circumference, which is depicted by a solid line in Fig. 28B, becomes the region of the film material to be coated after correction. The circle drawn by the solid line in Fig. 28A is shown by a broken line in Fig. 28B as a reference. For example, the image data shown in Fig. 28B is re-stored in the memory device 120a as control data at the time of film pattern formation.
控制裝置120依保存在記憶裝置120a之控制資料,控制薄膜材料從噴嘴單元147a~147f吐出及基板123基於移動載物台移動,以便薄膜材料塗佈於基板123上的預定區域。基板123一邊沿X軸方向移動一邊在噴嘴單元147a~147f的鉛垂下方(Z軸負方向)被塗佈薄膜材料。The control device 120 controls the film material to be ejected from the nozzle units 147a to 147f and the substrate 123 to move based on the moving stage in accordance with the control data stored in the memory device 120a, so that the film material is applied to a predetermined region on the substrate 123. The substrate 123 is coated with a film material vertically below the nozzle units 147a to 147f (in the Z-axis negative direction) while moving in the X-axis direction.
在第20圖B中示出液滴吐出裝置170的噴嘴單元147a~147f的附近。噴嘴單元147a~147f為例如結構相同的噴嘴單元,沿Y軸方向以等間隔固定於連結構件146。連結構件146能夠向Z軸方向移動地安裝於框架142的 橫樑142c上。如此,噴嘴單元147a~147f以能夠調整與基板123之間的距離的方式保持於框架142。藉由控制裝置120控制噴嘴單元147a~147f基於連結構件146向Z軸方向的移動。另外,噴嘴單元147a~147f可不透過連結構件146而直接固定於框架142的橫樑142c上。The vicinity of the nozzle units 147a to 147f of the droplet discharge device 170 is shown in Fig. 20B. The nozzle units 147a to 147f are, for example, nozzle units having the same configuration, and are fixed to the coupling member 146 at equal intervals in the Y-axis direction. The joint member 146 is movably attached to the frame 142 in the Z-axis direction. On the beam 142c. In this manner, the nozzle units 147a to 147f are held by the frame 142 so as to be able to adjust the distance from the substrate 123. The nozzle units 147a to 147f are controlled by the control device 120 to move in the Z-axis direction based on the joint member 146. Further, the nozzle units 147a to 147f can be directly fixed to the beam 142c of the frame 142 without passing through the joint member 146.
在第21圖A中示出噴嘴單元147a的概要圖。噴嘴單元147a包含在噴嘴夾具47ac 上沿X軸方向交替組裝之噴頭147a1 ~147a4 及紫外光源147a5 ~147a9 。各噴頭147a1 ~147a4 具備在X軸方向上隔開間隔配置之2列噴嘴列。各噴嘴列包括沿Y軸方向排列之複數個例如192個噴嘴孔。各噴嘴列沿Y軸方向之長度例如為約30mm。從各噴嘴孔吐出紫外線固化型薄膜材料的液滴。A schematic view of the nozzle unit 147a is shown in Fig. 21A. The nozzle unit 147a includes nozzles 147a 1 to 147a 4 and ultraviolet light sources 147a 5 to 147a 9 which are alternately assembled in the X-axis direction on the nozzle holder 47a c . Each of the heads 147a 1 to 147a 4 includes two rows of nozzle rows arranged at intervals in the X-axis direction. Each nozzle row includes a plurality of, for example, 192 nozzle holes arranged in the Y-axis direction. The length of each nozzle row in the Y-axis direction is, for example, about 30 mm. Droplets of the ultraviolet curable film material are discharged from the respective nozzle holes.
紫外光源147a5 ~147a9 例如包含發光二極體(LED)而構成,發出紫外區域波長的光。從噴頭147a1 ~147a4 的各噴嘴孔吐出至基板123之紫外線固化型薄膜材料藉由從紫外光源147a5 ~147a9 發出之光固化(臨時固化)。藉由控制裝置120控制從紫外光源147a5 ~147a9 射出紫外光。The ultraviolet light sources 147a 5 to 147a 9 are, for example, composed of a light emitting diode (LED), and emit light of a wavelength in the ultraviolet region. The ultraviolet curable film material discharged from the nozzle holes of the heads 147a 1 to 147a 4 to the substrate 123 is cured (temporarily cured) by light emitted from the ultraviolet light sources 147a 5 to 147a 9 . The ultraviolet light is emitted from the ultraviolet light sources 147a 5 to 147a 9 by the control device 120.
第21圖B中示出噴嘴單元147a(噴頭147a1 ~147a4 )的液滴吐出面的仰視圖。第21圖B中省略紫外光源147a5 ~147a9 的記載。在移動載物台上對置配置噴頭147a1 ~147a4 。Fig. 21B shows a bottom view of the droplet discharge surface of the nozzle unit 147a (heads 147a 1 to 147a 4 ). The description of the ultraviolet light sources 147a 5 to 147a 9 is omitted in Fig. 21B. The heads 147a 1 to 147a 4 are disposed opposite to each other on the moving stage.
噴頭147a1 ~147a4 的1個噴嘴列的噴嘴孔沿Y軸方向以160μm週期配置。在各噴頭147a1 ~147a4 中,X軸 的正側的噴嘴列以噴嘴孔的位置相對X軸的負側的噴嘴列向Y軸正方向偏離80μm的方式形成。因此,各噴頭147a1 ~147a4 包含在Y軸方向上以80μm間隔交錯排列之384個噴嘴孔,關於Y軸方向具有約300dpi的分辨率。各噴嘴孔包含壓電元件而構成,依外加電壓吐出薄膜材料。接收控制裝置120的指令進行薄膜材料的吐出(電壓的外加)。另外,在實施例3中,噴嘴列為2列,但是噴嘴列可設為1列,亦可設為3列以上。The nozzle holes of one nozzle row of the heads 147a 1 to 147a 4 are arranged in a period of 160 μm in the Y-axis direction. In each of the heads 147a 1 to 147a 4 , the nozzle row on the positive side of the X-axis is formed such that the position of the nozzle hole is shifted by 80 μm in the positive direction of the Y-axis with respect to the nozzle row on the negative side of the X-axis. Therefore, each of the heads 147a 1 to 147a 4 includes 384 nozzle holes staggered at intervals of 80 μm in the Y-axis direction, and has a resolution of about 300 dpi with respect to the Y-axis direction. Each nozzle hole is composed of a piezoelectric element, and the film material is discharged by applying a voltage. The command of the control device 120 receives the discharge of the film material (addition of voltage). Further, in the third embodiment, the number of nozzle rows is two, but the number of nozzle rows may be one or three or more.
噴頭147a1 ~147a4 一邊依次向Y軸的正方向偏離相對位置,一邊整體沿X軸方向配置。噴頭147a2 配置成相對噴頭147a1 向Y軸正方向側僅偏離20μ m。同樣道理,噴頭147a3 、噴頭147a4 配置成分別相對噴頭147a2 、噴頭147a3 向Y軸的正方向側僅偏離20μ m。結果,噴嘴單元147a具備在Y軸方向上以20μ m間隔(約1200dpi的高分辨率)配置之噴嘴孔。The heads 147a 1 to 147a 4 are arranged in the X-axis direction as a whole while being sequentially displaced from the relative position in the positive direction of the Y-axis. The head 147a 2 is disposed to be offset from the head 147a 1 by only 20 μm toward the positive side of the Y-axis. By the same token, the head 147a 3 and the head 147a 4 are disposed to be offset from the head 147a 2 and the head 147a 3 by only 20 μm toward the positive side of the Y-axis. As a result, the nozzle unit 147a is provided with nozzle holes arranged at intervals of 20 μm (high resolution of about 1200 dpi) in the Y-axis direction.
第21圖C中示出噴嘴單元147a~147f的概要俯視圖。如前述,各噴嘴單元147a~147f能夠使液滴著落在沿Y軸方向之約30mm的範圍內。並且,沿Y軸方向以等間隔配置。相鄰之噴嘴單元147a~147f之間的距離例如為約60mm。A schematic plan view of the nozzle units 147a to 147f is shown in Fig. 21C. As described above, each of the nozzle units 147a to 147f can cause the liquid droplets to land in a range of about 30 mm in the Y-axis direction. Further, they are arranged at equal intervals along the Y-axis direction. The distance between adjacent nozzle units 147a to 147f is, for example, about 60 mm.
在檢查成膜站103中,將由提昇器111輸送之基板123保持於移動載物台(卡盤板145)上之後,例如一邊使其向X軸的正方向移動,一邊朝向各噴嘴單元147a~147f下方的沿X軸方向之奇數列像元(在第21圖C中附 加圓形記號之像元)中的吐出目標位置(阻焊抗蝕劑形成目標位置),從噴嘴單元147a~147f吐出薄膜材料。若結束向奇數列像元中的目標位置吐出,則在Y載物台143向Y軸正方向使基板123例如僅移動10μm之後,接著一邊使基板123向X軸的正方向移動,一邊朝向各噴嘴單元147a~147f下方的沿X軸方向之偶數列像元(在第21圖C中附加叉形記號之像元)中的吐出目標位置,從噴嘴單元147a~147f吐出薄膜材料。能夠藉由在沿X軸方向之去路和回路上朝向奇數列像元與偶數列像元的目標位置吐出液滴,從而實現約2400dpi的高分辨率下的描繪。In the inspection film formation station 103, after the substrate 123 conveyed by the lifter 111 is held on the moving stage (chuck plate 145), for example, while moving in the positive direction of the X-axis, it faces the respective nozzle units 147a. Odd columns of pixels along the X-axis below 147f (attached in Figure 21C) The discharge target position (the target position of the solder resist formation) in the pixel of the circular mark is discharged, and the film material is discharged from the nozzle units 147a to 147f. When the Y-substrate 143 is moved to the target position of the odd-numbered column, the substrate 123 is moved by 10 μm in the positive direction of the Y-axis, and then the substrate 123 is moved in the positive direction of the X-axis. The discharge target position in the even-numbered column elements (the pixels in which the cross-shaped symbols are added in FIG. 21C) in the X-axis direction below the nozzle units 147a to 147f discharges the film material from the nozzle units 147a to 147f. It is possible to discharge a droplet at a target position of an odd column pixel and an even column pixel on the path and the loop in the X-axis direction, thereby realizing rendering at a high resolution of about 2400 dpi.
結束向偶數列像元吐出液滴後,驅動Y載物台143,使基板123向Y軸的正方向移動約30mm。之後,藉由X載物台144使基板123在X軸方向上往返,在去路和回路上分別向奇數列像元和偶數列像元著落薄膜材料。After the discharge of the droplets to the even-numbered column elements is completed, the Y stage 143 is driven to move the substrate 123 in the positive direction of the Y-axis by about 30 mm. Thereafter, the substrate 123 is reciprocated in the X-axis direction by the X stage 144, and the thin film material is deposited on the outward path and the loop to the odd column pixels and the even column pixels, respectively.
此外,再次進行同樣的處理,由沿X軸方向之總計3次往返完成薄膜圖案在基板123的表面上的形成。Further, the same processing is performed again, and the formation of the thin film pattern on the surface of the substrate 123 is completed by a total of three round trips in the X-axis direction.
基於第20圖A~第21圖C所示之實施例3之液滴吐出裝置具備6個噴嘴單元147a~147f。噴嘴單元的數量不限於6個。噴嘴單元的個數例如可以為1個。The droplet discharge device according to the third embodiment shown in Figs. 20A to 21C has six nozzle units 147a to 147f. The number of nozzle units is not limited to six. The number of nozzle units may be, for example, one.
在第22圖A~第22圖D中示出容納於基板反轉站104之基板反轉裝置150及紫外線照射裝置(阻焊抗蝕劑固化裝置)160之概要圖。如第22圖A所示,基板反轉裝置150包含基板保持器151及支撐構件152。基板保持器151具有沿長方形的外周除去1個短邊的3個邊之形狀 。藉由提昇器112(第18圖)輸送於基板反轉站104之基板121~127保持於基板保持器151。棒狀支撐構件152支撐基板保持器151。支撐構件152配置在與基板保持器151劃分之平面相同的平面內,其延伸方向與基板保持器151的2個臂部份的延伸方向平行。基板保持器151能夠以支撐構件152為旋轉中心旋轉。基板保持器151基於支撐構件152的旋轉藉由控制裝置120控制。A schematic view of the substrate inverting device 150 and the ultraviolet irradiation device (solder resist resist curing device) 160 housed in the substrate inversion station 104 is shown in FIGS. 22A to 22D. As shown in FIG. 22A, the substrate inverting device 150 includes a substrate holder 151 and a support member 152. The substrate holder 151 has a shape in which three sides of one short side are removed along the outer circumference of the rectangle . The substrates 121 to 127 which are transported to the substrate inversion station 104 by the lifter 112 (Fig. 18) are held by the substrate holder 151. The rod-shaped support member 152 supports the substrate holder 151. The support member 152 is disposed in the same plane as the plane in which the substrate holder 151 is divided, and extends in a direction parallel to the extending direction of the two arm portions of the substrate holder 151. The substrate holder 151 is rotatable about the support member 152 as a center of rotation. The substrate holder 151 is controlled by the control device 120 based on the rotation of the support member 152.
紫外線照射裝置160包含支撐構件161及紫外光源162。支撐構件161例如向與基板反轉裝置150的支撐構件152的延伸方向平行之方向延伸。紫外光源162例如包含燈或LED而構成,發出紫外區域波長的光。紫外光源162能夠以高於噴嘴單元147a(第21圖A)中所含之紫外光源147a5 ~147a9 (第21圖A)之輸出發出紫外光。紫外光的波長可設為與從噴嘴單元的紫外光源147a5 ~147a9 射出之紫外光的波長相等,亦可設為不同。The ultraviolet irradiation device 160 includes a support member 161 and an ultraviolet light source 162. The support member 161 extends, for example, in a direction parallel to the extending direction of the support member 152 of the substrate inverting device 150. The ultraviolet light source 162 is composed of, for example, a lamp or an LED and emits light of a wavelength in the ultraviolet region. The ultraviolet light source 162 can emit ultraviolet light at an output higher than the ultraviolet light sources 147a 5 to 147a 9 (Fig. 21A) included in the nozzle unit 147a (Fig. 21A). The wavelength of the ultraviolet light may be set to be equal to or different from the wavelength of the ultraviolet light emitted from the ultraviolet light sources 147a 5 to 147a 9 of the nozzle unit.
紫外光源162以能夠在其延伸方向移動的方式支撐於支撐構件161。藉由控制裝置120控制從紫外光源162射出紫外光及紫外光源162沿支撐構件161移動。The ultraviolet light source 162 is supported by the support member 161 in such a manner as to be movable in the extending direction thereof. The ultraviolet light from the ultraviolet light source 162 and the ultraviolet light source 162 are controlled to move along the support member 161 by the control device 120.
如第22圖B所示,在檢查成膜站103(第18圖)中在表面上形成有薄膜圖案之基板124藉由提昇器112輸送於基板反轉站104。基板124藉由提昇器112在基板保持器151上直接載置成例如基板124的表面(形成有薄膜圖案之面)朝上(Z軸正方向)。基板保持器151藉由進行吸附、按壓、夾緊等來固定保持基板124。亦即,基板 124保持成不會相對於基板保持器151相對移動。基板124基於基板保持器151之固定保持及其解除藉由控制裝置120控制。As shown in Fig. 22B, in the inspection film formation station 103 (Fig. 18), the substrate 124 on which the film pattern is formed on the surface is transported to the substrate inversion station 104 by the lifter 112. The substrate 124 is directly placed on the substrate holder 151 by the lifter 112 so that, for example, the surface of the substrate 124 (the surface on which the thin film pattern is formed) faces upward (the positive direction of the Z axis). The substrate holder 151 fixes the holding substrate 124 by suction, pressing, clamping, or the like. That is, the substrate The 124 is held so as not to move relative to the substrate holder 151. The substrate 124 is controlled by the control device 120 based on the fixed holding of the substrate holder 151 and its release.
如第22圖C所示,一邊從紫外光源162射出紫外光,一邊使紫外光源162沿支撐構件161移動。基板反轉裝置150及紫外線照射裝置160配置成當使紫外光源162沿支撐構件161移動時,紫外光源162通過保持在基板保持器151之基板124的上方,從紫外光源162射出之紫外光至少被照射於基板124的薄膜圖案形成區域,例如基板124的整個表面。從紫外光源162射出之紫外光例如以1000mJ/cm2 的能量密度照射於基板124的整個表面。藉由紫外光的照射進行形成於基板124的表面之薄膜圖案的正式固化。基板124的表面的薄膜圖案藉由正式固化被固化至其內部。在正式固化中,紫外光以臨時固化中更強的能量密度照射於基板124。另外,在檢查成膜站103中進行之臨時固化使薄膜圖案的表層部固化,但薄膜圖案的內部仍未固化。能夠藉由固化表層部來防止薄膜材料向面內方向擴展。As shown in Fig. 22C, the ultraviolet light source 162 is moved along the support member 161 while emitting ultraviolet light from the ultraviolet light source 162. The substrate inverting device 150 and the ultraviolet irradiation device 160 are disposed such that when the ultraviolet light source 162 is moved along the supporting member 161, the ultraviolet light source 162 is held by the substrate 124 of the substrate holder 151, and the ultraviolet light emitted from the ultraviolet light source 162 is at least A thin film pattern forming region, such as the entire surface of the substrate 124, is irradiated onto the substrate 124. The ultraviolet light emitted from the ultraviolet light source 162 is irradiated onto the entire surface of the substrate 124, for example, at an energy density of 1000 mJ/cm 2 . The solidification of the film pattern formed on the surface of the substrate 124 is performed by irradiation of ultraviolet light. The film pattern of the surface of the substrate 124 is cured to its inside by formal curing. In the formal curing, the ultraviolet light is irradiated onto the substrate 124 with a stronger energy density in the temporary curing. Further, the surface layer portion of the film pattern was cured by the temporary curing performed in the inspection film formation station 103, but the inside of the film pattern was not cured. The film material can be prevented from expanding in the in-plane direction by curing the surface layer portion.
如第22圖D所示,照射紫外光來使基板124的表面的薄膜圖案正式固化後,以支撐構件152為旋轉中心使基板保持器151旋轉180°。藉此,反轉保持於基板保持器151之基板124的表裏。表裏被反轉之基板124直接以表裏被反轉之狀態藉由提昇器113輸送於對準站105,接著輸送於檢查成膜站106。在進行基於提昇器113之輸送之 前,解除基板124基於基板保持器151之保持。As shown in FIG. 22D, after the ultraviolet light is irradiated to formally cure the film pattern on the surface of the substrate 124, the substrate holder 151 is rotated by 180° with the support member 152 as a center of rotation. Thereby, the front and back of the substrate 124 held by the substrate holder 151 are reversed. The substrate 124 which is reversed in the table is directly conveyed to the alignment station 105 by the lifter 113 in a state where the surface is reversed, and then transported to the inspection film forming station 106. In the delivery based on the lifter 113 Before, the release substrate 124 is held based on the substrate holder 151.
參閱第23圖A~第23圖F對基板保持器151的結構進行說明。第23圖A、第23圖C及第23圖E顯示基板保持器151的概要俯視圖,第23圖B、第23圖D及第23圖F顯示基板保持器151的概要主視圖。The structure of the substrate holder 151 will be described with reference to FIGS. 23A to 23F. 23A, 23C, and 23E show a schematic plan view of the substrate holder 151, and FIG. 23B, FIG. 23D, and FIG. 23F show a schematic front view of the substrate holder 151.
第23圖A及第23圖B所示之結構例中,基板保持器151在2條臂的表面具備真空吸附墊153。第23圖A及第23圖B中示出在2個臂的表面形成有複數個真空吸附墊153之例子。提昇器112(第18圖)輸送基板124且載置於形成有真空吸附墊153之表面上。基板124藉由來自真空吸附墊153的吸引力吸附保持於基板保持器151。In the configuration example shown in FIGS. 23A and 23B, the substrate holder 151 is provided with a vacuum suction pad 153 on the surface of the two arms. FIGS. 23A and 23B show an example in which a plurality of vacuum suction pads 153 are formed on the surfaces of the two arms. The lifter 112 (Fig. 18) transports the substrate 124 and is placed on the surface on which the vacuum adsorption pad 153 is formed. The substrate 124 is adsorbed and held by the substrate holder 151 by the attraction force from the vacuum adsorption pad 153.
第23圖C及第23圖D所示之結構例中,基板保持器151以分別沿2個臂的方式配置有按壓輥154。提昇器112將基板124放置於基板保持器151上之後,按壓輥154朝向基板124的邊緣移動。藉由基板124的邊緣被按壓輥154按壓,基板124保持於基板保持器151。In the configuration example shown in FIGS. 23C and 23D, the substrate holder 151 has the pressing roller 154 disposed along each of the two arms. After the lifter 112 places the substrate 124 on the substrate holder 151, the pressing roller 154 moves toward the edge of the substrate 124. The substrate 124 is held by the substrate holder 151 by the edge of the substrate 124 being pressed by the pressing roller 154.
第23圖E及第23圖F所示之結構例中,基板保持器151具備夾具機構155。第23圖E及第23圖F所示之夾具機構155具有沿基板保持器151的2個臂部份的長邊方向之豎起部份。藉由豎起部份的一部份(夾具頭)倒向內側(例如彎曲90°)來固定放置於基板保持器151上之基板124的端部。In the configuration example shown in FIGS. 23E and 23F, the substrate holder 151 is provided with a jig mechanism 155. The jig mechanism 155 shown in Figs. 23A and 23F has a erected portion along the longitudinal direction of the two arm portions of the substrate holder 151. The end portion of the substrate 124 placed on the substrate holder 151 is fixed by a portion (the jig head) of the erected portion being inverted to the inner side (for example, bent by 90).
第23圖A~第23圖F所示之基板保持器151藉由吸 附、按壓、夾入基板124中未形成有薄膜圖案的部份來固定保持基板124。The substrate holder 151 shown in FIGS. 23A to 23D is sucked by suction A portion of the substrate 124 in which the thin film pattern is not formed is attached, pressed, and sandwiched to fix the holding substrate 124.
上述例子中,照射紫外光正式固化基板124的表面的薄膜圖案之後,旋轉基板保持器151並反轉基板124的表裏。作為其他順序,可反轉基板124的表裏之後,從Z軸負方向側對基板124的表面照射紫外光來進行正式固化。並且,可同時並行進行基於紫外光的照射之正式固化與基板124基於基板保持器151的旋轉之表裏反轉。此時,採用例如為了對旋轉中的基板124的表面照射規定強度的紫外光與基板124的旋轉同步旋轉移動紫外光源162等結構。能夠藉由在反轉表裏之期間進行正式固化來縮短基板反轉站104中的處理時間。In the above example, after the ultraviolet light is used to form the thin film pattern on the surface of the substrate 124, the substrate holder 151 is rotated and the front and back of the substrate 124 are reversed. In the other order, after the front and back of the substrate 124 are reversed, the surface of the substrate 124 is irradiated with ultraviolet light from the negative side of the Z-axis to be formally cured. Further, the main curing by the ultraviolet light irradiation and the front and back rotation of the substrate 124 based on the rotation of the substrate holder 151 can be simultaneously performed in parallel. At this time, for example, in order to irradiate the surface of the rotating substrate 124 with ultraviolet light having a predetermined intensity, the ultraviolet light source 162 is rotated in synchronization with the rotation of the substrate 124. The processing time in the substrate inversion station 104 can be shortened by performing the main curing during the inversion table.
進行表面的薄膜圖案的正式固化及表裏的反轉之基板124藉由提昇器113(第18圖)輸送到對準站105。The substrate 124 on which the film pattern of the surface is completely cured and the front surface is reversed is transported to the alignment station 105 by the lifter 113 (Fig. 18).
對準站105具備與對準站102相同的結構和功能。由CCD照相機檢測形成於基板124的背面之對準標誌並進行θ 校正。並且,由圖像資料測量在表面形成薄膜圖案之基板124的大小,並生成重新在基板124的背面形成薄膜圖案時所用的控制資料。The alignment station 105 has the same structure and function as the alignment station 102. The alignment mark formed on the back surface of the substrate 124 is detected by a CCD camera and θ correction is performed. Further, the size of the substrate 124 on which the thin film pattern is formed on the surface is measured from the image data, and control information for re-forming the thin film pattern on the back surface of the substrate 124 is generated.
提昇器113將藉由對準站105所包含之θ 載物台的旋轉變更基板面內方向上的方向之基板124維持其方向來輸送至檢查成膜站106的載物台上。The lifter 113 conveys the direction of the substrate 124 in the direction in which the substrate is in the in-plane direction by the rotation of the θ stage included in the alignment station 105, and transports it to the stage of the inspection film formation station 106.
檢查成膜站106具備與檢查成膜站103相同的結構與功能。檢查成膜站106中依背面用的控制資料在基板124 的背面形成薄膜圖案。The inspection film formation station 106 has the same structure and function as the inspection film formation station 103. Checking the control data for the back surface of the film forming station 106 on the substrate 124 The back side forms a film pattern.
另外,背面用的控制資料可依在對準站102中獲取之圖像資料作成。此時,在對準站105中獲取之圖像資料例如僅使用於θ 校正。In addition, the control data for the back surface can be created based on the image data acquired in the alignment station 102. At this time, the image data acquired in the alignment station 105 is used, for example, only for θ correction.
由於在對準站105進行基板124的θ 校正,所以無需在檢查成膜站106中進行θ 校正。因此,無需相對於輸送至檢查成膜站106之基板124進行對位就能夠開始在背面形成薄膜圖案。因此,能夠縮短檢查成膜站106中的處理時間,甚至能夠實現縮短間歇時間並提高生產效率。Since the θ correction of the substrate 124 is performed at the alignment station 105, it is not necessary to perform θ correction in the inspection film formation station 106. Therefore, it is not necessary to form a thin film pattern on the back surface with respect to the alignment with the substrate 124 transported to the inspection film forming station 106. Therefore, it is possible to shorten the processing time in the inspection film forming station 106, and it is even possible to shorten the intermittent time and improve the production efficiency.
基板121~127在背面形成薄膜圖案之後,藉由提昇器114(第18圖)輸送至輸送帶116。之後,基板121~127藉由輸送帶116從搬出口107向筐體118的外部搬出。在載置於輸送帶116上之狀態下,藉由紫外線照射裝置108對基板121~127的整個背面照射紫外線,並進行形成於基板121~127的背面之薄膜圖案的正式固化。紫外線照射裝置108能夠以通過載置於輸送帶116上之基板121~127的上方的方式在筐體118內移動。紫外線照射裝置108一邊通過基板121~127的上方,一邊對基板121~127的背面照射紫外線。或者,可在筐體118內固定配置紫外線照射裝置108,例如使基板121~127通過輸送帶116在紫外線照射裝置108的下方移動。當基板121~127通過紫外線照射裝置108的下方時,進行向基板121~127的紫外線照射。向基板121~127的紫外線照射藉由控制裝置120控制。The substrates 121 to 127 are formed on the back surface and then transported to the conveyor belt 116 by the lifter 114 (Fig. 18). Thereafter, the substrates 121 to 127 are carried out from the outlet 107 to the outside of the casing 118 by the conveyor belt 116. In the state of being placed on the conveyor belt 116, the entire back surface of the substrates 121 to 127 is irradiated with ultraviolet rays by the ultraviolet irradiation device 108, and the film pattern formed on the back surfaces of the substrates 121 to 127 is completely cured. The ultraviolet irradiation device 108 can move in the casing 118 so as to be placed above the substrates 121 to 127 placed on the conveyor belt 116. The ultraviolet irradiation device 108 irradiates the back surfaces of the substrates 121 to 127 with ultraviolet rays while passing over the substrates 121 to 127. Alternatively, the ultraviolet irradiation device 108 may be fixedly disposed in the casing 118, and for example, the substrates 121 to 127 may be moved below the ultraviolet irradiation device 108 by the conveyor belt 116. When the substrates 121 to 127 pass under the ultraviolet irradiation device 108, ultraviolet irradiation to the substrates 121 to 127 is performed. The ultraviolet irradiation to the substrates 121 to 127 is controlled by the control device 120.
在薄膜形成裝置171中,結束在檢查成膜站103中向基板124表面形成薄膜圖案之後到將基板124載置於檢查成膜站106的載物台上為止期間,在基板反轉站104中正式固化形成於基板124表面之薄膜圖案。在檢查成膜站103中形成於基板124的表面上之薄膜圖案不與任何部位接觸就在基板反轉站104正式固化。In the film forming apparatus 171, the film formation apparatus 171 finishes the formation of the thin film pattern on the surface of the substrate 124 in the inspection film formation station 103 until the substrate 124 is placed on the stage of the inspection film formation station 106, in the substrate inversion station 104. The film pattern formed on the surface of the substrate 124 is formally cured. The film pattern formed on the surface of the substrate 124 in the film forming station 103 is inspected and solidified at the substrate inversion station 104 without coming into contact with any portion.
由於未進行正式固化之基板124未完全固化薄膜圖案的內部區域,所以產生黏著性(發黏感)。若在未實施基板124表面的薄膜圖案的正式固化之狀態下形成基板124背面的薄膜圖案,則例如在基於提昇器113處理基板124時或者在檢查成膜站106中向基板124背面形成薄膜圖案時,有時在表面的薄膜圖案上留有傷痕等。並且,還有時因黏著性而在各種處理中產生不良情況。Since the substrate 124 which has not been substantially cured does not completely cure the inner region of the film pattern, adhesiveness (stickiness) is generated. When the thin film pattern on the back surface of the substrate 124 is formed in a state where the thin film pattern on the surface of the substrate 124 is not formed, the thin film pattern is formed on the back surface of the substrate 124, for example, when the substrate 124 is processed based on the lifter 113 or in the inspection film forming station 106. At the time, there are sometimes scratches and the like on the film pattern of the surface. Further, there are cases where defects occur in various processes due to adhesion.
結束向基板124的表面形成薄膜圖案之後到將基板124載置於檢查成膜站106的載物台上為止期間正式固化形成於基板124的表面之薄膜圖案,藉此能夠防止基板124的表面的薄膜圖案上留有傷痕。因此,能夠形成高品質的薄膜圖案。After the film pattern is formed on the surface of the substrate 124 and the substrate 124 is placed on the stage of the inspection film formation station 106, the film pattern formed on the surface of the substrate 124 is completely cured, whereby the surface of the substrate 124 can be prevented. There are scratches on the film pattern. Therefore, a high quality film pattern can be formed.
並且,由於藉由從紫外線照射裝置108放射之紫外線進行基板124背面的薄膜圖案的正式固化,所以能夠防止搬出至筐體118的外部之後基板124背面的薄膜圖案上留有傷痕。Further, since the film pattern on the back surface of the substrate 124 is completely cured by the ultraviolet rays radiated from the ultraviolet irradiation device 108, it is possible to prevent the film pattern from being left on the back surface of the substrate 124 after being carried out to the outside of the casing 118.
參閱第24圖A~第24圖G,對配置於檢查成膜站103、檢查成膜站106之液滴吐出裝置170的檢查功能進 行說明。基於實施例3之液滴吐出裝置170不僅具有薄膜形成功能,還具有檢查是否適當地進行液滴從噴嘴孔的吐出之檢查功能。Referring to Figs. 24A to 24G, the inspection function of the droplet discharge device 170 disposed at the inspection film formation station 103 and the inspection film formation station 106 is performed. Line description. The droplet discharge device 170 according to the third embodiment has not only a film forming function but also an inspection function for checking whether or not the discharge of droplets from the nozzle holes is appropriately performed.
第24圖A中示出基於實施例3之液滴吐出裝置170的一部份的立體圖。基於實施例3之液滴吐出裝置170包括朝向基板121~127吐出薄膜材料的液滴之吐出部180及配置於比吐出部180更靠X軸的正側之檢查部181。檢查部181具備例如與吐出部180的框架142相同結構的框架182。亦即,框架182由向Z軸方向固定在底座141之2根支柱及沿著Y軸方向架設於2根支柱之間的橫樑構成。框架182的橫樑上例如以與移動載物台對置的方式支撐有線性感測器167。線性感測器167能夠藉由導引件向Y軸方向引導,並藉由直線馬達向Y軸方向移動。A perspective view of a portion of the droplet discharge device 170 according to the third embodiment is shown in Fig. 24A. The droplet discharge device 170 according to the third embodiment includes a discharge portion 180 that discharges droplets of the film material toward the substrates 121 to 127, and an inspection portion 181 that is disposed on the positive side of the X-axis of the discharge portion 180. The inspection unit 181 includes, for example, a frame 182 having the same structure as the frame 142 of the discharge unit 180. That is, the frame 182 is composed of two pillars that are fixed to the base 141 in the Z-axis direction and a beam that is spanned between the two pillars along the Y-axis direction. The wire sensor 167 is supported on the beam of the frame 182, for example, in opposition to the moving stage. The line sensor 167 can be guided in the Y-axis direction by the guide and moved in the Y-axis direction by the linear motor.
線性感測器167包括排列在一方向、例如35mm範圍之7500個發光二極體。保持在發光二極體145之基板121~127藉由線性感測器167拍攝(檢測)。線性感測器167中,發光二極體的排列方向與X軸方向平行。線性感測器167藉由控制裝置120控制。因此,基於線性感測器167之拍攝或線性感測器167的移動接受控制裝置120的指令來進行。The line sensor 167 includes 7500 light emitting diodes arranged in a direction, for example, 35 mm. The substrates 121 to 127 held by the light-emitting diode 145 are photographed (detected) by the line sensor 167. In the line sensor 167, the arrangement direction of the light emitting diodes is parallel to the X-axis direction. The line sensor 167 is controlled by the control device 120. Therefore, the shooting based on the line sensor 167 or the movement of the line sensor 167 is accepted by the instruction of the control device 120.
例如由吐出部180將薄膜材料塗佈於基板121~127之後,基板121~127在吸附保持於卡盤板145的狀態下,藉由X載物台144向檢查部181移動。吐出部180及檢查部181的位置、例如噴嘴單元147a~147f及線性感 測器167的X軸方向的位置記憶於記憶裝置120a中,控制裝置120依記憶於記憶裝置120a中之檢查部181的位置資料向檢查部181移動基板121~127。第24圖A中示出藉由移動載物台移動至檢查部181的框架182的下方之基板123。After the film material is applied to the substrates 121 to 127 by the discharge unit 180, the substrates 121 to 127 are moved to the inspection unit 181 by the X stage 144 while being held by the chuck plate 145. The positions of the discharge unit 180 and the inspection unit 181, for example, the nozzle units 147a to 147f and the line sexy The position of the detector 167 in the X-axis direction is stored in the memory device 120a, and the control device 120 moves the substrates 121 to 127 to the inspection unit 181 in accordance with the position data of the inspection unit 181 stored in the memory device 120a. FIG. 24A shows a substrate 123 that is moved to the lower side of the frame 182 of the inspection portion 181 by moving the stage.
若基板123向檢查部181移動,則檢查吐出部180中薄膜材料的吐出結果(著落痕跡)。若藉由吐出結果的檢查例如可知噴嘴孔中發生堵塞、產生不良程度的塗佈遺漏,則需要對基板123進行修復處理及基板123中發生遺漏之部位記憶於記憶裝置120a中。並且,藉由控制裝置120通知薄膜形成裝置的操作人員噴嘴孔被堵塞。藉此,能夠在向下一個應進行處理之基板122塗佈薄膜材料之前進行消除噴嘴孔堵塞之維護。When the substrate 123 moves to the inspection portion 181, the discharge result (landing mark) of the film material in the discharge portion 180 is inspected. When the inspection of the discharge result is, for example, the occurrence of clogging in the nozzle hole and the occurrence of a defect in the coating hole, it is necessary to repair the substrate 123 and store the missing portion of the substrate 123 in the memory device 120a. Further, the control device 120 notifies the operator of the film forming device that the nozzle hole is blocked. Thereby, it is possible to perform maintenance for eliminating clogging of the nozzle holes before applying the film material to the substrate 122 to be processed.
作為一例,線性感測器167一邊沿著Y軸方向在基板123的上方移動,一邊拍攝形成於基板123之薄膜圖案(塗佈結果),並將拍攝之圖像資料發送至控制裝置120。控制裝置120檢測例如圓形圖案的邊緣或者未進行薄膜材料的塗佈而遺漏之線,並將檢測結果記憶於記憶裝置120a中。可藉由記憶之資料得到薄膜圖案形成於基板123的良否判定(合格否判定),亦可在之後進行修復處理時利用其資料。As an example, the line sensor 167 picks up a thin film pattern (coating result) formed on the substrate 123 while moving over the substrate 123 in the Y-axis direction, and transmits the captured image data to the control device 120. The control device 120 detects, for example, the edge of the circular pattern or the line missing without applying the coating of the film material, and memorizes the detection result in the memory device 120a. The quality of the thin film pattern formed on the substrate 123 can be determined by the memory data (qualification determination), and the data can be used later when the repair process is performed.
接著,對實施例4進行說明。以下對與實施例3的不 同點進行說明,對相同的結構省略說明。關於薄膜圖案形成於基板121~127之結果能夠如上述實施例3檢測,但是除此之外還有檢測噴嘴孔堵塞之方法。實施例4中,例如利用檢查用板進行是否適當地進行液滴從噴嘴孔的吐出之檢查。Next, the fourth embodiment will be described. The following does not correspond to the embodiment 3 The same points will be described, and the description of the same structures will be omitted. The result of the formation of the thin film pattern on the substrates 121 to 127 can be detected as in the above-described third embodiment, but there is also a method of detecting the clogging of the nozzle holes. In the fourth embodiment, for example, whether or not the discharge of the liquid droplets from the nozzle holes is appropriately performed is performed by the inspection plate.
第24圖B中示出檢查用板128的俯視圖。檢查用板128包括例如環氧樹脂膜及形成於其表面之銅箔,並具有在一方向上較長之平面形狀。檢查用板128的長邊方向的長度例如為550mm左右,寬度例如為十數mm。亦可以不使用環氧樹脂膜,僅由銅箔形成檢查用板128。A plan view of the inspection plate 128 is shown in Fig. 24B. The inspection plate 128 includes, for example, an epoxy resin film and a copper foil formed on the surface thereof, and has a planar shape that is long in one direction. The length of the inspection plate 128 in the longitudinal direction is, for example, about 550 mm, and the width is, for example, ten or more mm. It is also possible to form the inspection sheet 128 only from the copper foil without using an epoxy resin film.
使銅箔形成面朝向上方(Z軸正方向)例如以長邊方向與Y軸方向平行的方式將檢查用板128吸附保持於卡盤板145。載物台上的保持檢查用板128之位置為噴嘴單元147a~147f的下方。The inspection sheet 128 is adsorbed and held by the chuck plate 145 such that the copper foil forming surface faces upward (the Z-axis positive direction), for example, so that the longitudinal direction is parallel to the Y-axis direction. The position of the holding inspection plate 128 on the stage is below the nozzle units 147a to 147f.
控制裝置120驅動X載物台144,一邊使檢查用板128向X軸方向、例如X軸的負方向移動,一邊發出從噴嘴單元147a~147f的所有噴嘴孔一同朝向檢查用板128吐出(檢查用吐出)薄膜材料之指令。薄膜材料在例如檢查用板128向X軸的負方向移動1mm期間被連續吐出。The control device 120 drives the X stage 144, and simultaneously ejects all the nozzle holes from the nozzle units 147a to 147f toward the inspection plate 128 while moving the inspection plate 128 in the X-axis direction, for example, in the negative direction of the X-axis (checking Use the instructions to spit out the film material. The film material is continuously discharged while, for example, the inspection plate 128 is moved by 1 mm in the negative direction of the X-axis.
第24圖B中用短實線顯示附著於檢查用板128之薄膜材料的圖案(著落痕跡)。附圖左側為從噴嘴單元147a的噴嘴孔吐出之薄膜材料的著落痕跡,附圖右側為從噴嘴單元147f的噴嘴孔吐出之薄膜材料的著落痕跡。省略位於其中間並從噴嘴單元147b~147e的噴嘴孔吐出 之薄膜材料的著落痕跡的記載。In Fig. 24B, the pattern (landing mark) of the film material attached to the inspection plate 128 is indicated by a short solid line. The left side of the drawing is a trace of the film material discharged from the nozzle hole of the nozzle unit 147a, and the right side of the drawing is a trace of the film material discharged from the nozzle hole of the nozzle unit 147f. Omission is made in the middle and is discharged from the nozzle holes of the nozzle units 147b to 147e A description of the traces of the film material.
藉由例如從無噴嘴孔堵塞的正常的各個噴嘴孔吐出之薄膜材料形成在X軸方向上1mm長度的線狀著落痕跡。著落痕跡與第21圖B所示之噴嘴孔的配置對應而分佈。亦即,各個噴嘴單元147a~147f上形成向Y軸方向以等間隔排列複數個著落痕跡之著落痕跡的8條列。著落痕跡的8條列在X軸方向上排列。A linear landing mark having a length of 1 mm in the X-axis direction is formed by, for example, a film material discharged from a normal nozzle hole blocked by a nozzle hole. The landing marks are distributed corresponding to the arrangement of the nozzle holes shown in FIG. 21B. In other words, each of the nozzle units 147a to 147f is formed with eight columns in which the landing marks of the plurality of landing marks are arranged at equal intervals in the Y-axis direction. The eight columns of the landing marks are arranged in the X-axis direction.
第24圖C中顯示吸附保持於卡盤板145之檢查用板128的俯視圖。形成有著落痕跡之檢查用板128在吸附保持於卡盤板145之狀態下,藉由X載物台144的驅動在檢查成膜站103、檢查成膜站106內向X軸的負方向移動至檢查部181。第24圖C中括號內示出移動後的檢查用板128。A plan view of the inspection plate 128 adsorbed and held on the chuck plate 145 is shown in Fig. 24C. The inspection plate 128 having the falling marks is moved in the negative direction of the X-axis in the inspection film formation station 103 and the inspection film formation station 106 by the driving of the X stage 144 while being adsorbed and held by the chuck plate 145. Inspection unit 181. The moving inspection plate 128 is shown in parentheses in Fig. 24C.
檢查用板128與線性感測器167關於X軸方向對位。檢查用板128配置於能夠藉由X載物台144移動線性感測器167的位置的下方。The inspection plate 128 is aligned with the line sensor 167 with respect to the X-axis direction. The inspection plate 128 is disposed below the position at which the line sensor 167 can be moved by the X stage 144.
如第24圖D所示,線性感測器167一邊向Y軸方向、本圖所示之例子中Y軸的負方向在包括從檢查用板128的長邊方向的其中一方的端部到另一方的端部之範圍內例如以恒定速度移動,一邊拍攝檢查用板128的銅箔表面。藉此,獲取包括薄膜材料的著落痕跡之圖像資料。As shown in Fig. 24D, the line sensor 167 is in the Y-axis direction and the negative direction of the Y-axis in the example shown in the figure, including one end from the longitudinal direction of the inspection plate 128 to the other. The surface of the copper foil of the inspection plate 128 is photographed while moving at a constant speed within the range of one end. Thereby, image data including the traces of the film material is obtained.
如第24圖E所示,藉由線性感測器167對至少能夠形成檢查用著落痕跡之範圍、例如檢查用板128的銅箔整個表面進行拍攝。沿Y軸方向之所有著落痕跡由1次掃 描統一檢測。As shown in Fig. 24E, the line sensor 167 photographs the entire surface of the copper foil which can form at least the range of the inspection landing mark, for example, the inspection plate 128. All traces along the Y-axis are scanned by 1 sweep Describe unified detection.
另外,檢查用板128不必保持成其長邊方向準確地與Y軸方向平行,亦可不必保持成線性感測器167的移動方向準確地與Y軸方向平行。但是,線狀著落痕跡的各個長邊方向與線性感測器167的移動方向為正交關係為較佳。如此能夠縮短能夠基於線性感測器167拍攝之寬度(本例中為35mm)。並且,即使為搭載多於實施例3的噴嘴單元之情況,亦與噴嘴單元的個數無關,能夠以1個線性感測器167的1次掃描拍攝著落痕跡。Further, the inspection plate 128 does not have to be kept so that its longitudinal direction is accurately parallel to the Y-axis direction, and it is not necessary to keep the moving direction of the line-shaped sensor 167 accurately parallel to the Y-axis direction. However, it is preferable that the longitudinal direction of each of the linear landing marks is orthogonal to the moving direction of the line sensor 167. This makes it possible to shorten the width (35 mm in this example) that can be taken based on the line sensor 167. Further, even when more than the nozzle unit of the third embodiment is mounted, regardless of the number of nozzle units, the landing trace can be imaged by one scan of the one line sensor 167.
另外,本例中,向Y軸的負方向移動線性感測器167,但是亦可藉由Y載物台143向Y軸的正方向移動檢查用板128。線性感測器167與檢查用板128(或者保持檢查用板128之載物台)相對移動成能夠拍攝能夠形成1mm長度的線狀著落痕跡之檢查用板128上的範圍即可。Further, in this example, the wire sensor 167 is moved in the negative direction of the Y-axis, but the inspection plate 128 may be moved in the positive direction of the Y-axis by the Y stage 143. The line sensor 167 may be moved relative to the inspection plate 128 (or the stage holding the inspection plate 128) so as to be capable of capturing a range of the inspection plate 128 capable of forming a linear landing mark having a length of 1 mm.
並且,本例採用將線性感測器167配置於比框架142更靠X軸正側之結構,但是線性感測器167例如可在框架142上保持成能夠向Y軸方向移動。Further, in this example, the wire sensor 167 is disposed on the positive side of the X-axis of the frame 142, but the wire sensor 167 can be held on the frame 142 so as to be movable in the Y-axis direction.
由線性感測器167拍攝之圖像資料發送至控制裝置120。The image data taken by the line sensor 167 is sent to the control device 120.
控制裝置120依藉由線性感測器167獲取之圖像資料(檢測結果),具體而言依檢查用板128上的著落痕跡判定是否適當地進行液滴從噴嘴單元147a~147f的各噴嘴孔的吐出(例如檢測吐出不良)。作為一例,檢測未在應 形成著落痕跡之位置檢測到著落痕跡之情況(著落痕跡的遺漏)或著落痕跡掠過之情況(不充份的著落痕跡)。由檢測這些不良之位置特定認為不良之噴嘴孔。控制裝置120通知用戶未適當地進行液滴的吐出之噴嘴孔。作為吐出不良的原因,例如可以認為噴嘴孔堵塞。The control device 120 determines whether or not the droplets are appropriately ejected from the nozzle holes of the nozzle units 147a to 147f based on the image data (detection result) acquired by the line sensor 167, specifically, the landing marks on the inspection plate 128. Spit (for example, detecting poor discharge). As an example, the test is not in response The position where the landing mark is formed detects the presence of the landing mark (the omission of the landing mark) or the case where the landing mark passes (there is no sufficient landing mark). A nozzle hole that is considered to be defective by detecting these defective positions. The control device 120 notifies the user that the nozzle hole for discharging the liquid droplet is not properly performed. As a cause of poor discharge, for example, it is considered that the nozzle holes are clogged.
接受通知的用戶能夠依通知內容或用戶側的情況進行例如改善噴嘴孔堵塞等措施。The user who receives the notification can perform measures such as improving the nozzle hole clogging according to the notification content or the user side.
本例中,並未向Y軸方向移動載物台(未向Y軸方向改變噴頭與載物台的相對位置),僅向X軸方向連續塗佈規定長度的薄膜材料,例如僅塗佈1mm。關於Y軸方向,由於來自複數個噴嘴孔的著落痕跡不相互重疊而相互隔著一定程度的距離配置,所以能夠高精確度地檢測噴嘴孔的堵塞。例如當噴嘴孔堵塞時,由於未形成1mm的著落痕跡,所以能夠輕鬆地明確哪個噴嘴孔堵塞。In this example, the stage is not moved in the Y-axis direction (the relative position of the head and the stage is not changed in the Y-axis direction), and only a film material of a predetermined length is continuously applied in the X-axis direction, for example, only 1 mm is applied. . In the Y-axis direction, since the landing marks from the plurality of nozzle holes are not overlapped with each other and are disposed at a certain distance from each other, the clogging of the nozzle holes can be detected with high accuracy. For example, when the nozzle hole is clogged, since 1 mm of the landing mark is not formed, it is possible to easily clarify which nozzle hole is clogged.
另外,並非以線狀塗佈薄膜材料,而是可以塗佈成著落痕跡呈點狀。但是,能夠藉由以線狀塗佈來檢測線的粗細。當著落痕跡比正常寬度細時,能夠判定為噴嘴孔雖未完全堵塞,但是產生局部堵塞,且薄膜材料的吐出量變少。控制裝置120能夠例如將著落痕跡的寬度與閾值相比較而小於閾值時判定為吐出不良。Further, the film material is not applied in a line shape, but may be applied so that the landing marks are in a dot shape. However, the thickness of the wire can be detected by linear coating. When the landing mark is thinner than the normal width, it can be determined that the nozzle hole is not completely blocked, but partial clogging occurs, and the discharge amount of the film material is reduced. The control device 120 can determine, for example, that the discharge defect is compared with the threshold value and is smaller than the threshold value.
當鄰接之n個、例如2個或3個噴嘴孔不良時,不進行改善噴嘴孔堵塞之措施就在基板121~127上形成薄膜圖案,則由於未著落薄膜材料的像元相連,所以如第24圖F所示,導致薄膜圖案上形成槽。這種基板121~127 還能夠不滿足作為產品的品質而設為規格外。另外,當鄰接之2個以上的噴嘴孔不良時,可特別設定基於控制裝置120之通知方式。When n adjacent, for example, two or three nozzle holes are defective, a thin film pattern is formed on the substrates 121 to 127 without improving the nozzle hole clogging, and since the pixels of the film material are not connected, the first 24, shown in Figure F, results in the formation of grooves in the film pattern. Such a substrate 121~127 It can also be set as a specification without satisfying the quality of the product. Further, when two or more adjacent nozzle holes are defective, a notification method based on the control device 120 can be specifically set.
在基於控制裝置120控制的前提下,每次結束對例如規定片數、作為一例對100片基板形成薄膜圖案之處理時實施實施例4的檢查。可按批量進行,亦可必須在開始對1片基板形成薄膜圖案之處理之前進行。On the premise of the control by the control device 120, the inspection of the fourth embodiment is performed every time the processing for forming a thin film pattern on a 100-piece substrate, for example, is completed. It may be carried out in batches or before starting the process of forming a film pattern on one substrate.
依基於實施例4之檢查方法的判定結果,能夠為了適當地進行液滴從各噴嘴孔之吐出而採取措施。因此,若依基於實施例4之液滴吐出裝置,能夠利用簡易的結構以高效率檢查液滴吐出是否良好,並進行高品質的薄膜圖案形成。According to the determination result of the inspection method according to the fourth embodiment, it is possible to take measures for appropriately discharging the liquid droplets from the respective nozzle holes. Therefore, according to the droplet discharge device of the fourth embodiment, it is possible to check whether or not the droplet discharge is good with high efficiency with a simple configuration, and to perform high-quality film pattern formation.
接著,對實施例5進行說明。以下,對與實施例4的不同點進行說明,對相同的結構省略說明。實施例4中,利用檢查用板128判定液滴從噴嘴孔的吐出是否良好,但是亦可利用形成薄膜圖案之基板進行噴嘴孔堵塞的檢查。Next, the fifth embodiment will be described. Hereinafter, differences from the fourth embodiment will be described, and the description of the same configurations will be omitted. In the fourth embodiment, it is determined whether or not the discharge of the liquid droplets from the nozzle holes is good by the inspection plate 128. However, the inspection of the nozzle hole clogging may be performed by the substrate on which the thin film pattern is formed.
如第24圖G所示,形成薄膜圖案之基板129上設置薄膜圖案形成區域129a及檢查區域129b。薄膜圖案形成於薄膜圖案形成區域129a內。第24圖G所示之例子中,基板129上以5行4列劃分20個薄膜圖案形成區域129a。薄膜圖案形成區域129a各自的沿Y軸方向之長度例如為約30mm。檢查區域129b劃分為基板129的X軸方向 的端部。檢查區域129b的平面形狀例如為長方形,Y軸方向及X軸方向的尺寸分別為十數mm及約30mm。As shown in Fig. 24G, the thin film pattern forming region 129a and the inspection region 129b are provided on the substrate 129 on which the thin film pattern is formed. The thin film pattern is formed in the thin film pattern formation region 129a. In the example shown in Fig. 24G, 20 thin film pattern formation regions 129a are divided in five rows and four columns on the substrate 129. The length of each of the thin film pattern formation regions 129a in the Y-axis direction is, for example, about 30 mm. The inspection region 129b is divided into the X-axis direction of the substrate 129 The end. The planar shape of the inspection region 129b is, for example, a rectangle, and the dimensions in the Y-axis direction and the X-axis direction are ten mm and about 30 mm, respectively.
第24圖G所示之薄膜圖案形成區域129a上利用噴嘴單元數例如不是6個而是1個、作為一例僅具備噴嘴單元147a之液滴吐出裝置形成薄膜圖案。一邊向X軸方向往返1次基板129,一邊朝向基板129吐出薄膜材料,並在左端列的5個薄膜圖案形成區域129a形成薄膜圖案。向Y軸的正方向移動基板129約30mm之後,再一邊向X軸方向往返1次基板129,一邊朝向基板129吐出薄膜材料,從而在從左第2列的薄膜圖案形成區域129a形成薄膜圖案。反復這些操作,在所有薄膜圖案形成區域129a中形成薄膜圖案。In the film pattern forming region 129a shown in FIG. 24, for example, the number of nozzle units is not six, but one, and the droplet discharge device having only the nozzle unit 147a as an example forms a thin film pattern. The substrate 129 is retracted once in the X-axis direction, and the thin film material is discharged toward the substrate 129, and a thin film pattern is formed in the five thin film pattern forming regions 129a in the left end row. After the substrate 129 is moved about 30 mm in the positive direction of the Y-axis, the substrate 129 is retracted once in the X-axis direction, and the film material is discharged toward the substrate 129 to form a thin film pattern in the thin film pattern formation region 129a from the left second column. By repeating these operations, a film pattern is formed in all of the film pattern forming regions 129a.
在向薄膜圖案形成區域129a塗佈薄膜材料之前,從噴嘴單元147a的各個噴嘴孔一同向檢查區域129b吐出薄膜材料。一邊向X軸方向移動基板,一邊進行薄膜材料的吐出,形成與例如在第24圖B所示之實施例4中形成之著落痕跡相同的著落痕跡。之後,與實施例4相同,由線性感測器167向Y軸方向的1次掃描判定液滴從噴嘴孔的吐出是否良好。Before the film material is applied to the film pattern forming region 129a, the film material is discharged from the nozzle holes of the nozzle unit 147a to the inspection region 129b. When the substrate is moved in the X-axis direction, the film material is discharged, and the same landing marks as the landing marks formed in the fourth embodiment shown in Fig. 24B are formed. Thereafter, in the same manner as in the fourth embodiment, it is determined whether or not the discharge of the liquid droplets from the nozzle holes is good by one scan of the line sensor 167 in the Y-axis direction.
或者,可以在向檢查區域129b吐出薄膜材料之後,不進行液滴吐出是否良好的檢查就在薄膜圖案形成區域129a形成薄膜圖案。此時,吐出至檢查區域129b之薄膜材料用於每個基板的履歷管理。亦即,依需要,之後能夠由線性感測器167檢測著落痕跡,並利用於基板129的薄 膜圖案的評價。Alternatively, after the film material is discharged into the inspection region 129b, the film pattern can be formed in the film pattern formation region 129a without performing inspection for whether or not the droplet discharge is good. At this time, the film material discharged to the inspection region 129b is used for history management of each substrate. That is, the landing traces can be detected by the line sensor 167 as needed, and used for thinning of the substrate 129. Evaluation of the film pattern.
當基板129上設置檢查區域129b並檢測檢查區域129b中的著落痕跡時,記憶裝置120a中記憶有基板129上檢查區域129b的位置。控制裝置120依記憶於記憶裝置120a之檢查區域129b的位置資料控制基板129基於移動載物台之移動及薄膜材料從噴頭的吐出,並在檢查區域129b吐出薄膜材料。之後,向線性感測器167的下方移動基板129,並檢測形成於檢查區域129b之薄膜材料的著落痕跡。When the inspection region 129b is provided on the substrate 129 and the landing marks in the inspection region 129b are detected, the position of the inspection region 129b on the substrate 129 is memorized in the memory device 120a. The control device 120 controls the substrate 129 to discharge the film material in the inspection region 129b based on the movement of the moving stage and the discharge of the film material from the head according to the position data stored in the inspection area 129b of the memory device 120a. Thereafter, the substrate 129 is moved below the line sensor 167, and the landing marks of the film material formed in the inspection region 129b are detected.
由於在形成薄膜圖案之基板129的表面設置檢查區域129b,因此無需檢查用板128。因此,能夠提高性價比。Since the inspection region 129b is provided on the surface of the substrate 129 on which the thin film pattern is formed, the inspection plate 128 is not required. Therefore, the cost performance can be improved.
另外,可在將薄膜圖案形成於薄膜圖案形成區域129a時的載物台向X軸方向的往返動作的範圍內設置線性感測器167。此時,無需檢查部181(第24圖A),從而能夠縮小薄膜形成裝置的設置面積(覆蓋區)。並且,由於能夠縮減用於向檢查部181移動基板129來檢查的時間,所以能夠進一步提高生產效率。In addition, the line sensor 167 can be provided in a range in which the stage of the thin film pattern is formed in the thin film pattern forming region 129a in the X-axis direction. At this time, the inspection portion 181 (FIG. 24A) is not required, and the installation area (coverage area) of the film forming apparatus can be reduced. Further, since the time for inspection by moving the substrate 129 to the inspection unit 181 can be reduced, the production efficiency can be further improved.
實施例5中示出噴嘴單元的個數為1個的液滴吐出裝置,但是即使使用具備6個噴嘴單元之液滴吐出裝置亦能夠以相同的順序進行檢查。In the fifth embodiment, the droplet discharge device having the number of nozzle units is one. However, even when the droplet discharge device having six nozzle units is used, the inspection can be performed in the same order.
接著,對實施例6進行說明。以下,對與實施例3的不同點進行說明,對相同的結構省略說明。還能夠從噴嘴 孔吐出薄膜材料,檢測被形成之著落痕跡,利用於校正噴頭之間或噴嘴單元之間的相對位置。Next, the sixth embodiment will be described. Hereinafter, differences from the third embodiment will be described, and the description of the same configurations will be omitted. Also able to get from the nozzle The holes eject the film material and detect the marks of the formation that are formed to correct the relative position between the nozzles or between the nozzle units.
第25圖A中示出從噴頭#1、噴頭#2的噴嘴孔吐出之薄膜材料的著落痕跡(#1)、著落痕跡(#2)的概要圖。在以虛線描繪之各矩形內部,2列著落痕跡向Y軸方向延伸。第25圖B中放大示出來自噴頭#1、噴頭#2的薄膜材料的著落痕跡(#1)、著落痕跡(#2)。各薄膜材料的著落痕跡例如具有在X軸方向上1mm長度的線狀形狀。來自噴頭#1、噴頭#2的薄膜材料的著落痕跡(#1)、著落痕跡(#2)例如由線性感測器167的沿Y軸方向之1次掃描檢測。Fig. 25A is a schematic view showing a landing mark (#1) and a landing mark (#2) of the film material discharged from the nozzle holes of the head #1 and the head #2. Inside each of the rectangles drawn by the broken lines, the two rows of landing marks extend in the Y-axis direction. In Fig. 25B, the landing trace (#1) and the landing trace (#2) of the film material from the head #1 and the head #2 are shown enlarged. The landing marks of the respective film materials have, for example, a linear shape having a length of 1 mm in the X-axis direction. The landing trace (#1) and the landing trace (#2) of the film material from the head #1 and the head #2 are detected by, for example, one scan of the line sensor 167 in the Y-axis direction.
控制裝置120由藉由線性感測器167獲取之圖像資料計算例如著落痕跡(#1)的左上著落痕跡(位於X軸的正側列的最靠Y軸負側之薄膜材料的著落痕跡)與著落痕跡(#2)的左上著落痕跡之間的沿X軸方向之距離。並且,計算著落痕跡(#1)的右下著落痕跡與著落痕跡(#2)的右下著落痕跡之間的沿X軸方向之距離。計算這些距離的平均值l△X 。The control device 120 calculates, for example, the left upper landing mark of the landing mark (#1) from the image data acquired by the line sensor 167 (the landing mark of the film material on the negative side of the Y-axis which is the most positive side of the X-axis) The distance in the X-axis direction from the left upper landing mark of the landing mark (#2). Then, the distance in the X-axis direction between the right lower landing mark of the landing mark (#1) and the right lower landing mark of the landing mark (#2) is calculated. Calculate the average value of these distances l ΔX .
噴嘴單元的製造中,例如噴頭#1與噴頭#2組裝於噴嘴夾具上,以便沿X軸方向之相互間的距離(配置間隔)成為20μm。組裝時,工作人員一邊測量噴頭的組裝位置與複數個噴頭之間距離,一邊謹慎地進行位置調整。因此,需要較長的工作時間。In the manufacture of the nozzle unit, for example, the head #1 and the head #2 are assembled to the nozzle holder so that the distance (arrangement interval) between them in the X-axis direction is 20 μm. During assembly, the staff carefully adjusts the position while measuring the distance between the assembly position of the nozzle and the plurality of nozzles. Therefore, it takes a long working time.
實施例6中,組裝噴頭#1、噴頭#2之後,能夠由平 均值l△X 與噴頭#1、噴頭#2的X軸方向的尺寸求出噴頭#1、噴頭#2之間的沿X軸方向之距離(配置間隔)。因此,無需實際測量噴頭#1、噴頭#2之間的距離,就能夠依吐出結果校正噴頭#1、噴頭#2之間的偏離。因此,例如能夠縮短噴頭組裝工作的時間。In the sixth embodiment, after assembling the head #1 and the head #2, the edge X between the head #1 and the head #2 can be obtained from the average value l ΔX and the size of the head #1 and the head #2 in the X-axis direction. Distance in the direction of the axis (configuration interval). Therefore, it is possible to correct the deviation between the head #1 and the head #2 in accordance with the discharge result without actually measuring the distance between the head #1 and the head #2. Therefore, for example, the time for assembling the head can be shortened.
關於Y軸方向的位置偏離亦能夠相同地進行校正。噴頭#1、噴頭#2例如以在Y軸方向上僅偏離20μm的方式組裝於噴嘴夾具上。藉此計算著落痕跡(#1)的左上點與著落痕跡(#2)的左上點之間的沿Y軸方向之距離及著落痕跡(#1)的右下點與著落痕跡(#2)的右下點之間的沿Y軸方向的距離。計算這些距離的平均值l△Y 。作為一例,當平均值l△Y 為21μm時,使噴頭#1、噴頭#2之間的沿Y軸方向之組裝偏離僅減小1μm即可。The positional deviation in the Y-axis direction can also be corrected in the same manner. The head #1 and the head #2 are assembled to the nozzle holder, for example, so as to be shifted by only 20 μm in the Y-axis direction. Thereby, the distance in the Y-axis direction between the upper left point of the landing mark (#1) and the upper left point of the landing mark (#2) and the lower right point and the landing mark (#2) of the landing mark (#1) are calculated. The distance along the Y-axis between the lower right points. Calculate the average value of these distances l ΔY . As an example, when the average value l ΔY is 21 μm, the assembly deviation in the Y-axis direction between the head #1 and the head #2 may be reduced by only 1 μm.
另外,關於X軸方向的偏離,可再調整噴頭的組裝位置,但是還能夠藉由控制薄膜材料從噴嘴孔之吐出定時來校正偏離量。因此,可將例如計算之平均值l△X 或者噴頭#1、噴頭#2之間的沿X軸方向之距離(配置間隔)記憶於記憶裝置120a中。Further, with respect to the deviation in the X-axis direction, the assembly position of the head can be adjusted, but it is also possible to correct the amount of deviation by controlling the discharge timing of the film material from the nozzle holes. Therefore, for example, the calculated average value l ΔX or the distance (arrangement interval) in the X-axis direction between the head #1 and the head #2 can be memorized in the memory device 120a.
接著,對實施例7進行說明。以下對與實施例6的不同點進行說明,對相同的結構省略說明。Next, a description will be given of the seventh embodiment. Differences from the sixth embodiment will be described below, and the description of the same configurations will be omitted.
第25圖C中示出薄膜材料的塗佈結果。第25圖C中用實線顯示來自噴嘴孔之薄膜材料的著落痕跡,用虛線 顯示薄膜材料的著落的基準位置。薄膜材料的著落痕跡(此時例如為來自各噴嘴孔之吐出開始點)以線性感測器167的沿Y軸方向之1次掃描檢測。The coating result of the film material is shown in Fig. 25C. In Figure 25, the solid line shows the trace of the film material from the nozzle hole, with a dotted line The reference position of the landing of the film material is displayed. The landing marks of the film material (in this case, for example, the discharge start points from the respective nozzle holes) are detected by one scan of the line sensor 167 in the Y-axis direction.
藉由檢測例如複數個薄膜材料的著落痕跡的從基準位置之偏離(X軸方向的偏離△X,Y軸方向的偏離△Y),藉此能夠檢測在噴頭的組裝上具有θ 方向的偏離(△θ )。By detecting, for example, the deviation from the reference position of the landing marks of the plurality of film materials (deviation ΔX in the X-axis direction, deviation ΔY in the Y-axis direction), it is possible to detect the deviation in the θ direction in the assembly of the head ( △ θ ).
並且,在組裝於噴嘴夾具之前噴頭上形成有複數個噴嘴孔,但是在噴頭上形成噴嘴孔之製造過程中,在噴嘴孔的形成位置有可能發生細微偏離。此時,由塗佈結果關於例如N個著落痕跡檢測△Y,計算整體平均值。向θ 方向旋轉校正噴頭的組裝,以使平均值變為最小。或者,能夠進行薄膜材料從噴嘴孔的吐出定時的控制,以便得到相同的效果。Further, a plurality of nozzle holes are formed in the head before being assembled in the nozzle holder, but in the manufacturing process of forming the nozzle holes in the head, slight deviation may occur at the position at which the nozzle holes are formed. At this time, the overall average value is calculated from the coating result with respect to, for example, N landing marks. The assembly of the correction head is rotated in the θ direction to minimize the average value. Alternatively, it is possible to control the discharge timing of the film material from the nozzle holes to obtain the same effect.
亦能夠校正噴頭間的θ 方向的相對位置的偏離。It is also possible to correct the deviation of the relative position in the θ direction between the heads.
第26圖中示出基於實施例8之薄膜形成裝置172的概要圖。以下,對與實施例3的不同點進行說明,對相同的結構省略說明。薄膜形成裝置172中,對準站102、對準站105不包括進行θ 校正之對準裝置,並且檢查成膜站103、檢查成膜站106的液滴吐出裝置包括θ 載物台149及CCD照相機163~166。Fig. 26 is a schematic view showing a film forming apparatus 172 according to the eighth embodiment. Hereinafter, differences from the third embodiment will be described, and the description of the same configurations will be omitted. In the film forming apparatus 172, the alignment station 102 and the alignment station 105 do not include an alignment device that performs θ correction, and the film deposition station 103 and the droplet discharge device that inspects the film formation station 106 include the θ stage 149 and the CCD. Cameras 163~166.
薄膜形成裝置172的對準站102、對準站105上配置 作為進行不隨θ 校正之簡單對準之對準裝置之臨時放置台148。基板121~127藉由提昇器111、提昇器113載置於對準站102、對準站105的臨時放置台148上,被實施向固定銷之緊壓等簡單對準之後,輸送至檢查成膜站103、檢查成膜站106。The alignment station 102 of the film forming apparatus 172 and the alignment station 105 are disposed as a temporary placement stage 148 as an alignment means for performing simple alignment without θ correction. The substrates 121 to 127 are placed on the temporary positioning table 148 of the alignment station 102 and the alignment station 105 by the lifter 111 and the lifter 113, and are simply aligned with the pressing force of the fixing pin, etc., and then transported to the inspection. The membrane station 103 checks the film formation station 106.
檢查成膜站103、檢查成膜站106的液滴吐出裝置在例如X載物台144與卡盤板145之間包括θ 載物台149。θ 載物台149在與XY平面平行之面內能夠在與Z軸平行之旋轉軸的周圍旋轉保持於卡盤板145之基板121~127。並且,液滴吐出裝置包括檢測形成於基板121~127的表裏面之對準標誌之CCD照相機163~166。The droplet discharge device that inspects the film formation station 103 and inspects the film formation station 106 includes, for example, a θ stage 149 between the X stage 144 and the chuck plate 145. The θ stage 149 is rotatable and held by the substrates 121 to 127 of the chuck plate 145 around the rotation axis parallel to the Z axis in a plane parallel to the XY plane. Further, the droplet discharge device includes CCD cameras 163 to 166 that detect alignment marks formed on the front surface of the substrates 121 to 127.
輸送至檢查成膜站103、檢查成膜站106之基板121~127吸附保持於卡盤板145,藉由CCD照相機163~166檢測表裏面的對準標誌。檢測結果(拍攝之圖像資料)發送至控制裝置120。The substrates 121 to 127 which are transported to the inspection film formation station 103 and the inspection film formation station 106 are adsorbed and held by the chuck plate 145, and the alignment marks on the inside of the watch are detected by the CCD cameras 163 to 166. The detection result (photographed image data) is sent to the control device 120.
控制裝置120處理檢測結果,並計算基板121~127的位置及基板面內方向上的姿勢(方向)。之後,藉由例如驅動θ 載物台149來校正(θ 校正)基板121~127在基板面內方向上之姿勢。並且,控制裝置120依CCD照相機163~166的檢測結果計算基板121~127的尺寸。依計算之尺寸生成用於形成薄膜材料之控制資料。The control device 120 processes the detection result, and calculates the position of the substrates 121 to 127 and the posture (direction) in the in-plane direction of the substrate. Thereafter, the posture of the substrates 121 to 127 in the in-plane direction of the substrate is corrected ( θ- corrected) by, for example, driving the θ stage 149. Further, the control device 120 calculates the sizes of the substrates 121 to 127 based on the detection results of the CCD cameras 163 to 166. Control data for forming the film material is generated based on the calculated dimensions.
薄膜形成裝置172中,不在對準站102、對準站105進行基板121~127的θ 校正,而是在檢查成膜站103、檢查成膜站106使用θ 載物台149進行基板121~127的θ 校正。之後,依生成之控制資料在基板121~127上形成薄膜圖案。A thin film forming apparatus 172, 102 is not in alignment station, an alignment station 105 for correcting θ substrate 121 to 127, but 103, forming station 106 checks θ stage 149 using the substrate 121 to 127 for forming the inspection station θ correction. Thereafter, a thin film pattern is formed on the substrates 121 to 127 in accordance with the generated control data.
另外,實施例8中,亦能夠在例如規定片數的基板處理結束之後使用線性感測器167檢查是否適當地進行來自噴嘴單元147a~147f的各噴嘴孔之液滴的吐出。Further, in the eighth embodiment, for example, after the completion of the substrate processing of the predetermined number of sheets, the line sensor 167 can be used to check whether or not the discharge of the liquid droplets from the nozzle holes of the nozzle units 147a to 147f is appropriately performed.
實施例8中,亦在檢查成膜站103於基板121~127上形成薄膜圖案之後,在檢查成膜站106的載物台上載置表裏反轉之基板121~127為止之期間,在基板反轉站104中,使形成於基板121~127表面之薄膜圖案正式固化。藉此,能夠防止傷痕附在基板121~127表面的薄膜圖案。因此能夠形成高品質的薄膜圖案。In the eighth embodiment, after the film formation station 103 is formed on the substrates 121 to 127, the substrate is reversed during the inspection of the substrate 121 to 127 in which the substrate of the film formation station 106 is inverted. In the transfer station 104, the film patterns formed on the surfaces of the substrates 121 to 127 are formally cured. Thereby, it is possible to prevent the film pattern in which the scratches are attached to the surfaces of the substrates 121 to 127. Therefore, a high quality film pattern can be formed.
並且,由於藉由從紫外線照射裝置108射出之紫外線進行基板121~127背面的薄膜圖案的正式固化,所以能夠防止搬出至筐體118的外部之後,傷痕附在基板121~127的背面薄膜圖案。Further, since the thin film pattern on the back surfaces of the substrates 121 to 127 is completely cured by the ultraviolet rays emitted from the ultraviolet irradiation device 108, it is possible to prevent the scratches from being attached to the outer surface of the casing 118, and the flaws are attached to the back surface film patterns of the substrates 121 to 127.
另外,基於實施例8之薄膜形成裝置亦與實施例3相同,能夠利用簡單的結構有效地檢查是否已適當地進行來自噴嘴單元147a~147f的各噴嘴孔之液滴的吐出,並形成高品質的薄膜圖案。Further, in the film forming apparatus according to the eighth embodiment, as in the third embodiment, it is possible to effectively check whether or not the discharge of the liquid droplets from the nozzle holes of the nozzle units 147a to 147f has been appropriately performed with a simple structure, and to form a high quality. Film pattern.
第27圖中示出基於實施例9之薄膜形成裝置173的概要圖。以下對與實施例3的不同點進行說明,對相同的結構省略說明。薄膜形成裝置173不包括基板反轉站104 、對準站105、檢查成膜站106及提昇器112、提昇器113,這一點與基於實施例3之薄膜形成裝置171不同。基於實施例3及實施例8之薄膜形成裝置171、薄膜形成裝置172能夠在基板121~127的兩面形成薄膜圖案,但是基於實施例9之薄膜形成裝置173只在基板121~124的單面、例如表面形成薄膜圖案。Fig. 27 is a schematic view showing a film forming apparatus 173 based on Embodiment 9. Differences from the third embodiment will be described below, and the description of the same configurations will be omitted. The thin film forming device 173 does not include the substrate inversion station 104 The alignment station 105, the film formation station 106, the lifter 112, and the lifter 113 are different from the film forming apparatus 171 according to the third embodiment. The thin film forming apparatus 171 and the thin film forming apparatus 172 of the third embodiment and the eighth embodiment can form a thin film pattern on both surfaces of the substrates 121 to 127. However, the thin film forming apparatus 173 according to the ninth embodiment has only one side of the substrates 121 to 124. For example, the surface forms a thin film pattern.
基於實施例9之薄膜形成裝置173中,在對準站102與檢查成膜站103中並行進行處理。亦即,在對準站102進行形成於基板122的表面之對準標誌的檢測及基板122的對準,在此期間,檢查成膜站103中在基板123的表面形成薄膜圖案。在該期間,例如輸送帶115將未形成薄膜圖案之基板121搬入至筐體118內。對表面的薄膜圖案形成結束之基板124藉由提昇器114輸送至輸送帶116。在基板124載置於輸送帶116上之狀態下,藉由從紫外線照射裝置108射出之紫外線進行形成於基板124的表面之薄膜圖案的正式固化。之後,藉由輸送帶116基板124從搬出口107搬出至筐體118的外部。In the film forming apparatus 173 based on Embodiment 9, processing is performed in parallel in the alignment station 102 and the inspection film forming station 103. That is, the alignment mark 102 performs the detection of the alignment mark formed on the surface of the substrate 122 and the alignment of the substrate 122. During this period, the film formation station 103 is inspected to form a thin film pattern on the surface of the substrate 123. During this period, for example, the conveyor belt 115 carries the substrate 121 on which the thin film pattern is not formed into the casing 118. The substrate 124 on which the film pattern formation of the surface is completed is transported to the conveyor belt 116 by the lifter 114. In a state where the substrate 124 is placed on the conveyor belt 116, the film pattern formed on the surface of the substrate 124 is officially cured by the ultraviolet rays emitted from the ultraviolet irradiation device 108. Thereafter, the substrate 124 of the conveyor belt 116 is carried out from the delivery port 107 to the outside of the casing 118.
實施例9中,容納於檢查成膜站103之液滴吐出裝置亦能夠利用簡單的結構有效地檢查是否已適當地進行來自噴嘴單元147a~147f的各噴嘴孔的液滴的吐出,並形成高品質的薄膜圖案。In the ninth embodiment, the liquid droplet discharging device accommodated in the inspection film forming station 103 can effectively check whether or not the discharge of the liquid droplets from the nozzle holes of the nozzle units 147a to 147f is appropriately performed with a simple configuration, and the formation is high. Quality film pattern.
以上依實施例對本發明進行了說明,但是本發明不限於這些實施例。對於本領域技術人員來講,例如能夠進行各種變更、改良及組合等是應該理解的。The invention has been described above by way of examples, but the invention is not limited to the embodiments. It will be understood by those skilled in the art that various modifications, improvements, combinations, etc. can be made.
例如,實施例中,僅藉由載物台進行基板相對於噴嘴單元之移動(XY平面內的移動)。作為其他結構例,例如可以使框架能夠向X軸方向移動,且能夠使噴嘴單元相對於框架向Y軸方向及Z軸方向移動。噴嘴單元與基板相對地移動即可。但是,在XY平面內僅移動基板之結構比向XY平面方向移動噴嘴單元之結構能夠高精確度地形成薄膜圖案。For example, in the embodiment, the movement of the substrate relative to the nozzle unit (movement in the XY plane) is performed only by the stage. As another configuration example, for example, the frame can be moved in the X-axis direction, and the nozzle unit can be moved in the Y-axis direction and the Z-axis direction with respect to the frame. The nozzle unit may be moved relative to the substrate. However, the structure in which only the substrate is moved in the XY plane can form a thin film pattern with higher precision than the structure in which the nozzle unit is moved in the XY plane direction.
並且,實施例中,在印刷配線板上形成由阻焊抗蝕劑構成之薄膜圖案,但是基於上述實施例之薄膜形成裝置在例如觸控面板的製造中能夠利用於在玻璃基板上形成絕緣膜之用途中。Further, in the embodiment, the thin film pattern composed of the solder resist is formed on the printed wiring board, but the thin film forming apparatus according to the above embodiment can be utilized for forming an insulating film on the glass substrate in the manufacture of, for example, a touch panel. In use.
另外,實施例中,使用1個線性感測器進行薄膜材料的著落痕跡的檢測,但是亦可沿著X軸方向排列複數個線性感測器並進行檢測,以便發光二極體的排列方向成為X軸方向。藉由使用複數個線性感測器,即使在著落痕跡向X軸方向較長的情況下,亦能夠以1次掃描進行檢測。Further, in the embodiment, the detection of the landing marks of the film material is performed using one line sensor, but a plurality of line sensors may be arranged along the X-axis direction and detected so that the arrangement direction of the light-emitting diodes becomes X-axis direction. By using a plurality of line sensors, even when the landing marks are long in the X-axis direction, the detection can be performed in one scan.
20‧‧‧平板20‧‧‧ tablet
21‧‧‧移動機構21‧‧‧Mobile agencies
22‧‧‧X移動機構22‧‧‧X mobile agency
23‧‧‧Y移動機構23‧‧‧Y mobile agency
24‧‧‧θ旋轉機構24‧‧‧θ rotating mechanism
25‧‧‧載物台25‧‧‧stage
30‧‧‧支柱30‧‧‧ pillar
31‧‧‧橫樑31‧‧‧ beams
32‧‧‧拍攝裝置32‧‧‧Photographing device
33‧‧‧控制裝置33‧‧‧Control device
34‧‧‧記憶裝置34‧‧‧ memory device
35‧‧‧輸入裝置35‧‧‧ Input device
36‧‧‧輸出裝置36‧‧‧Output device
37‧‧‧修復裝置37‧‧‧Repair device
38‧‧‧不良部位38‧‧‧Poor parts
40‧‧‧噴嘴單元40‧‧‧Nozzle unit
41‧‧‧噴嘴夾具(支撐構件)41‧‧‧Nozzle fixture (support member)
42、42A~42D‧‧‧噴頭42, 42A~42D‧‧‧ nozzle
43‧‧‧光源43‧‧‧Light source
45‧‧‧噴嘴孔45‧‧‧Nozzle hole
45r‧‧‧成為基準之噴嘴孔45r‧‧‧The nozzle hole to be the reference
46、46a、46b‧‧‧噴嘴列46, 46a, 46b‧‧‧ nozzle column
47‧‧‧測角儀47‧‧‧Gyrometer
48‧‧‧昇降機構48‧‧‧ Lifting mechanism
50‧‧‧基板50‧‧‧Substrate
51‧‧‧目標圖案區域51‧‧‧Target pattern area
52‧‧‧未使用區域52‧‧‧Unused area
53‧‧‧薄膜圖案53‧‧‧film pattern
55A~55D‧‧‧噴嘴孔的圖像Image of 55A~55D‧‧‧ nozzle hole
56‧‧‧與X軸垂直的假想平面56‧‧‧Imaginary plane perpendicular to the X-axis
60‧‧‧設計上的檢查圖案60‧‧‧ Design inspection pattern
61‧‧‧形成之檢查圖案61‧‧‧Inspected pattern formed
65‧‧‧噴嘴單元支撐機構65‧‧‧Nozzle unit support mechanism
66‧‧‧感測器66‧‧‧Sensor
67‧‧‧驅動器67‧‧‧ drive
70‧‧‧單元掃描區域70‧‧‧ unit scanning area
71‧‧‧Pass區域71‧‧‧Pass area
75‧‧‧塗佈有液狀材料之區域75‧‧‧A region coated with liquid material
76‧‧‧開口76‧‧‧ openings
77‧‧‧輔體77‧‧‧Auxiliary
80‧‧‧拍攝裝置80‧‧‧Photographing device
81‧‧‧照明裝置81‧‧‧Lighting device
82‧‧‧拍攝範圍82‧‧‧ Shooting range
101‧‧‧基板搬入口101‧‧‧Substrate entrance
102‧‧‧對準站102‧‧‧Alignment station
103‧‧‧檢查成膜站103‧‧‧Check film formation station
104‧‧‧基板反轉站104‧‧‧Substrate reversal station
105‧‧‧對準站105‧‧‧Alignment station
106‧‧‧檢查成膜站106‧‧‧Check film formation station
107‧‧‧基板搬出口107‧‧‧Substrate removal
111~114‧‧‧提昇器111~114‧‧‧ Lifter
115、116‧‧‧輸送帶115, 116‧‧‧ conveyor belt
118‧‧‧框體118‧‧‧ frame
120‧‧‧控制裝置120‧‧‧Control device
120a‧‧‧記憶裝置120a‧‧‧ memory device
121~127‧‧‧基板121~127‧‧‧Substrate
122a~122d‧‧‧對準標記122a~122d‧‧‧ alignment mark
128‧‧‧檢查用板128‧‧‧Check board
129‧‧‧基板129‧‧‧Substrate
129a‧‧‧薄膜圖案形成區域129a‧‧‧Film pattern forming area
129b‧‧‧檢查區域129b‧‧‧ inspection area
131‧‧‧底座(基台)131‧‧‧Base (base)
132‧‧‧X載物台132‧‧‧X stage
133‧‧‧θ載物台133‧‧‧θ stage
134‧‧‧卡盤板134‧‧‧ chuck plate
135~138‧‧‧CCD照相機135~138‧‧‧CCD camera
141‧‧‧底座141‧‧‧Base
142‧‧‧框架142‧‧‧Frame
142a、142b‧‧‧支柱142a, 142b‧‧ ‧ pillar
142c‧‧‧橫樑142c‧‧‧beam
143‧‧‧Y載物台143‧‧‧Y stage
144‧‧‧X載物台144‧‧‧X stage
145‧‧‧卡盤板145‧‧‧ chuck plate
146‧‧‧連結構件146‧‧‧Connected components
147a~147f‧‧‧噴嘴單元147a~147f‧‧‧Nozzle unit
147a1 ~147a4 ‧‧‧噴頭147a 1 ~147a 4 ‧‧‧Spray
147a5 ~147a9 ‧‧‧紫外光源147a 5 ~147a 9 ‧‧‧UV source
148‧‧‧臨時放置台148‧‧‧ Temporary placement
149‧‧‧θ載物台149‧‧‧θ stage
150‧‧‧基板反轉裝置150‧‧‧Substrate reversal device
151‧‧‧基板保持器151‧‧‧Substrate holder
152‧‧‧支撐構件152‧‧‧Support members
153‧‧‧真空吸附墊153‧‧‧Vacuum suction pad
154‧‧‧擠壓輥154‧‧‧Squeeze roller
155‧‧‧夾具機構155‧‧‧Clamping mechanism
160‧‧‧紫外線照射裝置160‧‧‧UV irradiation device
161‧‧‧支撐構件161‧‧‧Support members
162‧‧‧紫外光源162‧‧‧UV source
163~166‧‧‧CCD照相機163~166‧‧‧CCD camera
167‧‧‧線性感測器167‧‧‧Line sensor
170‧‧‧液滴吐出裝置170‧‧‧Drop ejection device
171、172、173‧‧‧薄膜形成裝置171, 172, 173‧‧‧ film forming device
180‧‧‧吐出部180‧‧‧ spit out
181‧‧‧檢查部181‧‧ ‧ Inspection Department
182‧‧‧框架182‧‧‧Frame
第1圖係基於實施例1之描繪裝置的概要圖。Fig. 1 is a schematic view of a drawing device based on the first embodiment.
第2圖A係噴嘴單元的立體圖,第2圖B係噴嘴單元的仰視圖。Fig. 2A is a perspective view of the nozzle unit, and Fig. 2B is a bottom view of the nozzle unit.
第3圖係顯示噴嘴與噴嘴圖像的位置關係之圖。Fig. 3 is a view showing the positional relationship between the nozzle and the nozzle image.
第4圖係形成薄膜圖案之基板的俯視圖。Fig. 4 is a plan view of a substrate on which a thin film pattern is formed.
第5圖A係噴嘴單元與噴嘴單元支撐機構的仰視圖,第5圖B係顯示基板表面的掃描順序之圖。Fig. 5A is a bottom view of the nozzle unit and the nozzle unit supporting mechanism, and Fig. 5B is a view showing a scanning order of the substrate surface.
第6圖A係拆卸一個噴嘴單元之狀態的噴嘴單元與噴嘴單元支撐機構的仰視圖,第6圖B係顯示拆卸一個噴嘴單元之狀態下的基板表面的掃描順序之圖。Fig. 6A is a bottom view of the nozzle unit and the nozzle unit supporting mechanism in a state in which one nozzle unit is removed, and Fig. 6B is a view showing a scanning sequence of the surface of the substrate in a state in which one nozzle unit is removed.
第7圖A係基於實施例1之薄膜圖案形成方法的流程圖。Fig. 7A is a flow chart of a film pattern forming method based on Example 1.
第7圖B係第7圖A的步驟S4的詳細流程圖。Fig. 7B is a detailed flowchart of step S4 of Fig. 7A.
第7圖C係第7圖A的步驟S8的詳細流程圖。Fig. 7C is a detailed flowchart of step S8 of Fig. 7A.
第8圖A係顯示設計上的檢查圖案之圖,第8圖B係顯示實際上形成之檢查圖案的一例之圖。Fig. 8A is a view showing a design inspection pattern, and Fig. 8B is a view showing an example of an inspection pattern actually formed.
第9圖A係正常薄膜圖案的一部份的俯視圖,第9圖B係產生不良之薄膜圖案的一部份的俯視圖。Fig. 9A is a plan view of a portion of a normal film pattern, and Fig. 9B is a plan view of a portion of a film pattern which produces a defect.
第10圖係基於實施例2之薄膜形成裝置的概要圖。Fig. 10 is a schematic view showing a film forming apparatus based on Example 2.
第11圖係基於實施例2之薄膜形成裝置的載物台、拍攝裝置、修復裝置及噴頭單元的立體圖。Fig. 11 is a perspective view of a stage, an image pickup device, a repairing device, and a head unit of the film forming apparatus of the second embodiment.
第12圖A係形成於基板上之薄膜圖案的俯視圖,第12圖B係形成於基板上之包含不良部位之薄膜圖案的俯視圖。Fig. 12A is a plan view of a thin film pattern formed on a substrate, and Fig. 12B is a plan view of a thin film pattern including a defective portion formed on a substrate.
第13圖係基於實施例2之薄膜形成裝置的修理方法的流程圖。Fig. 13 is a flow chart showing a repair method of the film forming apparatus of the second embodiment.
第14圖係噴頭單元及拍攝裝置的截面圖。Figure 14 is a cross-sectional view of the head unit and the photographing device.
第15圖係顯示噴頭單元及拍攝裝置的拍攝範圍的位置關係的圖。Fig. 15 is a view showing the positional relationship of the head unit and the photographing range of the photographing device.
第16圖係用於說明基於其他實施例之薄膜形成裝置的調整方法的顯示噴嘴單元及拍攝裝置的拍攝範圍的位置關係之圖。Fig. 16 is a view for explaining a positional relationship between the display nozzle unit and the imaging range of the imaging device based on the adjustment method of the thin film forming apparatus of the other embodiment.
第17圖係用於說明基於其他實施例的變形例之薄膜形成裝置的調整方法的顯示噴嘴單元及拍攝裝置的拍攝範圍的位置關係之圖。FIG. 17 is a view for explaining a positional relationship between the display nozzle unit and the imaging range of the imaging device based on the adjustment method of the thin film forming apparatus according to the modification of the other embodiment.
第18圖係基於實施例3之包括液滴吐出裝置之薄膜形成裝置的概要圖。Fig. 18 is a schematic view showing a film forming apparatus including a droplet discharge device based on Embodiment 3.
第19圖A係對準站中所包含的對準裝置的概要圖,第19圖B及第19圖C係對準站中的基板的俯視圖。Fig. 19A is a schematic view of an alignment device included in an alignment station, and Fig. 19B and Fig. 19C are plan views of a substrate in an alignment station.
第20圖A及第20圖B係檢查成膜站中所包含之液滴吐出裝置的一部份的概要圖。20A and 20B are schematic views of a part of the liquid droplet discharging device included in the film forming station.
第21圖A係顯示噴嘴單元之概要圖,第21圖B係顯示噴嘴單元的液滴吐出面之俯視圖,第21圖C係顯示噴嘴單元的配置之概要俯視圖。Fig. 21A is a schematic view showing a nozzle unit, Fig. 21B is a plan view showing a droplet discharge surface of the nozzle unit, and Fig. 21C is a schematic plan view showing the arrangement of the nozzle unit.
第22圖A~第22圖D係基板反轉站中所包含之基板反轉裝置及紫外線照射裝置的概要圖。22A to 22D are schematic views of a substrate inverting device and an ultraviolet irradiation device included in a substrate inversion station.
第23圖A、第23圖C及第23圖E係基板保持器的概要俯視圖,第23圖B、第23圖D及第23圖F係基板保持器的概要側視圖。23A, 23C, and 23E are schematic plan views of the substrate holder, and FIG. 23B, FIG. 23D, and FIG. 23F are schematic side views of the substrate holder.
第24圖A係對基於實施例3之液滴吐出裝置的檢查功能進行說明之圖,第24圖B及第24圖C係對基於實施例4之液滴吐出裝置的檢查功能進行說明之圖。Fig. 24 is a view for explaining an inspection function of the droplet discharge device according to the third embodiment, and Fig. 24B and Fig. 24C are diagrams for explaining an inspection function of the droplet discharge device according to the fourth embodiment. .
第24圖D~第24圖F係對基於實施例4之液滴吐出 裝置的檢查功能進行說明之圖,第24圖G係對基於實施例5之液滴吐出裝置的檢查功能進行說明之圖。Figure 24 to Figure 24F show the ejection of droplets based on Example 4. FIG. 24G is a view for explaining an inspection function of the droplet discharge device according to the fifth embodiment.
第25圖A、第25圖B係顯示基於實施例6之薄膜材料的塗佈結果的例子之圖,第25圖C係顯示基於實施例7之薄膜材料的塗佈結果的例子之圖。Fig. 25A and Fig. 25B are views showing an example of the coating result of the film material of Example 6, and Fig. 25C is a view showing an example of the coating result of the film material of Example 7.
第26圖係基於實施例8之薄膜形成裝置的概要圖。Fig. 26 is a schematic view showing a film forming apparatus based on Example 8.
第27圖係基於實施例9之薄膜形成裝置的概要圖。Fig. 27 is a schematic view showing a film forming apparatus based on Example 9.
第28圖A及第28圖B係對格伯資料校正的一例進行說明之圖。Fig. 28A and Fig. 28B are diagrams for explaining an example of the Gerber data correction.
35‧‧‧輸入裝置35‧‧‧ Input device
36‧‧‧輸出裝置36‧‧‧Output device
33‧‧‧控制裝置33‧‧‧Control device
34‧‧‧記憶裝置34‧‧‧ memory device
37‧‧‧修復裝置37‧‧‧Repair device
65‧‧‧噴嘴單元支撐機構65‧‧‧Nozzle unit support mechanism
40‧‧‧噴嘴單元40‧‧‧Nozzle unit
32‧‧‧拍攝裝置32‧‧‧Photographing device
31‧‧‧橫樑31‧‧‧ beams
30‧‧‧支柱30‧‧‧ pillar
50‧‧‧基板50‧‧‧Substrate
25‧‧‧保持機構25‧‧‧ Keeping institutions
24‧‧‧θ 旋轉機構24‧‧‧ θ rotating mechanism
23‧‧‧Y移動機構23‧‧‧Y mobile agency
22‧‧‧X移動機構22‧‧‧X mobile agency
21‧‧‧移動機構21‧‧‧Mobile agencies
20‧‧‧平板20‧‧‧ tablet
Claims (25)
Applications Claiming Priority (3)
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JP2011172026A JP2013038177A (en) | 2011-08-05 | 2011-08-05 | Droplet discharge device and inspection method |
JP2011253517A JP2013110236A (en) | 2011-11-21 | 2011-11-21 | Thin-film pattern formation device and thin-film pattern formation method |
JP2012111095A JP2013237004A (en) | 2012-05-15 | 2012-05-15 | Thin film forming position, and repairing method and adjusting method for thin film forming device |
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TWI511794B true TWI511794B (en) | 2015-12-11 |
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KR102340465B1 (en) * | 2014-03-11 | 2021-12-16 | 가부시키가이샤 스크린 홀딩스 | Substrate treatment apparatus and substrate treatment method |
KR101445745B1 (en) * | 2014-04-21 | 2014-11-04 | 주식회사 디앤씨 | Inspecting unit and dispensing module having the same and maintain method for nozzle using the same |
KR101599040B1 (en) * | 2014-07-28 | 2016-03-14 | 순천향대학교 산학협력단 | Repair apparatus using electro hydro dynamic inkjet |
KR101599037B1 (en) * | 2014-07-28 | 2016-03-14 | 순천향대학교 산학협력단 | Repair apparatus using electro hydro dynamic inkjet |
JP6423672B2 (en) * | 2014-09-26 | 2018-11-14 | 株式会社Screenホールディングス | Substrate processing apparatus and substrate processing method |
CN105499069B (en) * | 2014-10-10 | 2019-03-08 | 住友重机械工业株式会社 | Membrane formation device and film forming method |
CN104808446B (en) | 2015-05-07 | 2021-02-02 | 合肥京东方光电科技有限公司 | Coating machine |
JP6695237B2 (en) * | 2016-08-22 | 2020-05-20 | 東京エレクトロン株式会社 | Droplet ejection device and droplet ejection condition correction method |
JP6689540B2 (en) * | 2016-08-22 | 2020-04-28 | 住友重機械工業株式会社 | Film forming apparatus and film forming method |
KR102655331B1 (en) * | 2016-11-30 | 2024-04-08 | 주식회사 탑 엔지니어링 | Coating device for monitering the positon and displacement of discharge head and method for controling the same |
TWI650618B (en) * | 2017-10-03 | 2019-02-11 | 財團法人工業技術研究院 | Method for fabricating thin films and organic luminescence device |
JP6925746B2 (en) * | 2017-12-15 | 2021-08-25 | 住友重機械工業株式会社 | Membrane forming device and film forming method |
KR102086411B1 (en) * | 2018-06-04 | 2020-03-09 | 주식회사 코엠에스 | PCB Plate Film Monitoring System |
JP7224000B2 (en) * | 2018-09-03 | 2023-02-17 | パナソニックIpマネジメント株式会社 | LIQUID MATERIAL SUPPLY DEVICE AND LIQUID MATERIAL SUPPLY METHOD |
CN110239233B (en) * | 2019-05-15 | 2021-07-06 | 东旭光电科技股份有限公司 | Cover plate glass spraying device |
JP2021181071A (en) * | 2020-05-20 | 2021-11-25 | 住友重機械工業株式会社 | Ink coating device, control device of the same, and inkjet head inspection method |
JP7478029B2 (en) * | 2020-06-01 | 2024-05-02 | 住友重機械工業株式会社 | Image data generating device and image data generating method |
CN113522601B (en) * | 2021-07-23 | 2022-07-26 | 蜂巢能源科技有限公司 | Ceramic coating mechanism and pole piece coating system and method |
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TW201311356A (en) | 2013-03-16 |
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