CN105499069B - Membrane formation device and film forming method - Google Patents
Membrane formation device and film forming method Download PDFInfo
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- CN105499069B CN105499069B CN201510450812.0A CN201510450812A CN105499069B CN 105499069 B CN105499069 B CN 105499069B CN 201510450812 A CN201510450812 A CN 201510450812A CN 105499069 B CN105499069 B CN 105499069B
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- 239000012528 membrane Substances 0.000 title claims abstract description 47
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000012937 correction Methods 0.000 claims abstract description 23
- 238000003851 corona treatment Methods 0.000 claims description 18
- 238000010191 image analysis Methods 0.000 abstract description 6
- 238000007711 solidification Methods 0.000 description 32
- 230000008023 solidification Effects 0.000 description 32
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- Coating Apparatus (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Plasma Technology (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The present invention provides the membrane formation device that a kind of image analysis without carrying out the substrate surface after film is formed can remove satellite droplet.From the nozzle head opposed with the substrate for being held in objective table towards substrate spue the membrane material through droplet treatment.Mobile mechanism makes to be held in one in the substrate and nozzle head of objective table relative to another movement.Storage device stores the image data and film thickness correction information of film to be formed.Control device controls nozzle head and mobile mechanism according to image data, and film is thus formed on substrate.Data are input to control device by input unit.If having film thickness instruction value from input unit input, then control device makes corrections information according to film thickness come the film thickness instruction value that makes corrections, thus the film thickness targets value of calculating ratio film thickness instruction value thickness, and control device control nozzle head and mobile mechanism are to form the film for being equivalent to film thickness targets value thickness.
Description
This application claims preferential based on Japanese patent application filed on October 10th, 2014 the 2014-208562nd
Power.The entire content of this Japanese application is incorporated by reference in this manual.
Technical field
The membrane material through droplet treatment is spued to which the film of the formation film on substrate is formed from nozzle head the present invention relates to a kind of
Device and film forming method.
Background technique
Method (the patent text of solder resist film is formed on printed base plate it has been known that there is the drop from nozzle head discharge solder resist
It offers 1).The droplet of the drop separation to be spued from the nozzle bore of nozzle head lands on the position for deviateing target location sometimes.
If droplet lands on the inside of the opening portion of solder resist film, formed in opening portion solder resist small region (hereinafter,
Referred to as " satellite droplet ").
It is known to remove the technology (patent document 2) of satellite droplet by irradiating laser beam to satellite droplet.Thereby, it is possible to
Inhibit the decline of the yield rate in solder resist film formation process.
Patent document 1: Japanese Unexamined Patent Publication 7-263845 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2012-96286 bulletin
It removes the method for satellite droplet in order to execute through laser irradiation it is necessary to have shootings to be formed with solder resist film
The imaging sensor on the surface of substrate and the image analysis apparatus of the position according to captured image detection satellite droplet.
Summary of the invention
The image analysis that the purpose of the present invention is to provide a kind of without carrying out the substrate surface after film is formed can remove
The membrane formation device of satellite droplet.Another object of the present invention is to provide a kind of without carrying out the substrate surface after film is formed
Image analysis can remove the film forming method of satellite droplet.
A kind of viewpoint according to the present invention, provides a kind of membrane formation device, includes
Objective table, for keeping substrate;
Nozzle head, it is opposed with the substrate of the objective table is held in, and spue towards the substrate through droplet treatment
Membrane material;
Mobile mechanism makes one in the substrate for being held in the objective table and the nozzle head relative to another
It is mobile;
Storage device stores the image data and film thickness correction information of film to be formed;
Control device controls the nozzle head and the mobile mechanism according to described image data, thus in the substrate
Form the film with pattern defined in described image data;And
Input unit is used for the control device input data,
If having film thickness instruction value from input unit input, the control device is mended according to film thickness correction information
The just described film thickness instruction value, the thus film thickness targets value of film thickness instruction value thickness described in calculating ratio,
And the control device controls the nozzle head and the mobile mechanism, is equivalent to the film thickness targets to be formed
It is worth the film of thickness.
Another kind viewpoint according to the present invention, provides a kind of film forming method, with following process:
According to image data from nozzle head towards the drop of substrate discharge membrane material, it is consequently formed with described image data
The film of defined pattern;And
Corona treatment is carried out to the whole region of the substrate for being formed with the film, thus be attached to need not for removal
Want the membrane material in region.
The membrane material (satellite droplet) for being attached to unnecessary region can be removed by corona treatment.Due to substrate
Whole region carry out corona treatment, there is no need to carry out the image analysis etc. for determining the position of satellite droplet.
Detailed description of the invention
Fig. 1 is the synoptic diagram of the membrane formation device of embodiment.
Fig. 2 is the synoptic diagram of the apparatus for coating used in the membrane formation device of embodiment and the block diagram of control device.
Fig. 3 is the flow chart of the film forming method of embodiment.
Fig. 4 A to Fig. 4 C be film forming method intermediate stage and film formed after substrate and film cross-sectional view.
Fig. 5 A to Fig. 5 C is the signal for indicating the configuration of multiple devices used in the membrane formation device of another embodiment
Figure.
In figure: 20- moves in device, 21- conveying roller, 22- block, 30,30A- apparatus for coating, 31- platform, 32- moving machine
Structure, 33- objective table, 34- lifter pin, 35- nozzle unit, 36- nozzle head, 37- temporarily solidify with light source, the supply of 38- membrane material
Device, 40,40A- formal solidification device, 41- conveying roller, 42- formal solidification light source, 50- conveying device, 51- guiding piece,
52- elevator, 60- control device, 61- film process portion, 62- film thickness correction processing unit, 63- storage device, 65- input dress
It sets, 66- output device, 70- substrate, 71- film, 72- satellite droplet, the opening portion 73-, 75- plasma, 80,80A- plasma
Body processing unit, 80B- double-sided plasma body processing unit, 83- inversion set, 85- annealing device, Tr- film thickness instruction value,
Tt- film thickness targets value.
Specific embodiment
The synoptic diagram of the membrane formation device of embodiment is shown in Fig. 1.The membrane formation device of embodiment includes: to move in device
20, apparatus for coating 30, formal solidification device 40, conveying device 50 and control device 60.Definition is using horizontal plane as the face xy, by lead
As the positive xyz orthogonal coordinates of z-axis above hanging down.Move in device 20, apparatus for coating 30, formal solidification device 40 successively direction
The positive configuration of x-axis.Device 20, apparatus for coating 30, formal solidification device 40 and conveying device 50 are moved in the control of control device 60.
Conveying device 50 moves out substrate 70 as process object from device 20 is moved in, and is moved in apparatus for coating 30.Also, from painting
Cloth apparatus 30 moves out substrate 70, and is moved in formal solidification device 40.
Moving in device 20 includes conveying roller 21 and block 22.Conveying roller 21 conveying as process object substrate 70 up to
Block 22 contacts.By the contact of substrate 70 and block 22, substrate 70 is substantially positioned in the conveying direction.
Conveying device 50 includes guiding piece 51 and elevator 52.Elevator 52 is guided part 51 and guides and move to the direction x
It is dynamic.The substrate 70 substantially positioned in moving in device 20 is kept by elevator 52 and is delivered to apparatus for coating 30.It is arranged in painting
It sets and is coated with the substrate 70 of membrane material in 30 and is kept by elevator 52 and be delivered to formal solidification device 40.
Apparatus for coating 30 includes platform 31, mobile mechanism 32 and objective table 33.Objective table 33 is supported via mobile mechanism 32
In on platform 31.Mobile mechanism 32 is controlled the control of device 60 and to the direction x and the direction y moving stage 33, and with
The posture for the direction of rotation that the straight line parallel with z-axis changes objective table 33 for rotation center.
33 over-assemble of objective table has multiple lift pins 34.Lifter pin 34 is held on it keeps substrate 70, and makes 70 phase of substrate
Objective table 33 is gone up and down.In the state of increase substrate 70, space is formed between substrate 70 and objective table 33.
By the way that the supporting arm of elevator 52 is inserted into the space, elevator 52 can receive substrate 70 from objective table 33.On the contrary, can
Objective table 33 is handed over to from elevator 52 by substrate 70.By declining lifter pin 34, substrate 70 can be made to be tightly attached to objective table
33.Objective table 33 for example passes through vacuum chuck fixed substrate 70.
Apparatus for coating 30 is coated with the film being made of the resin of photo-curable to the surface for the substrate 70 for being held in objective table 33
Material.
Formal solidification device 40 includes conveying roller 41 and formal solidification light source 42.Treated in apparatus for coating 30 base
Plate 70 is transported to formal solidification device 40 by conveying device 50, and is equipped on conveying roller 41.Conveying roller 41 is to x-axis
Positive direction conveying substrate 70.Formal solidification light source 42 is configured in the top of the transport path of substrate 70.Formal solidification is used up
The light comprising making the cured wavelength components of membrane material is irradiated in source 42 to the substrate 70 conveyed by conveying roller 41.
The synoptic diagram of apparatus for coating 30 and the block diagram of control device 60 are shown in Fig. 2.As shown in Figure 1, apparatus for coating 30 wraps
Include platform 31, mobile mechanism 32 and objective table 33.In addition, apparatus for coating 30 includes nozzle unit 35 and membrane material feedway
38。
Control device 60 controls mobile mechanism 32, and thus, it is possible to the direction x and this 2 direction moving stages 33 of the direction y.
Substrate 70 is held in objective table 33.Nozzle unit 35 is supported in the top of substrate 70.Nozzle unit 35 includes and objective table 33
Opposed nozzle head 36 and interim solidification light source 37.Membrane material feedway 38 supplies the photo-curable of liquid to nozzle head 36
Membrane material, and extra membrane material is recycled from nozzle head 36.
Nozzle head 36 be equipped with multiple nozzle bores, from nozzle bore towards substrate 70 spue the membrane material through droplet treatment.From spray
The membrane material that nozzle aperture spues and is attached to substrate 70 is temporarily solidified by the light issued from interim solidification light source 37.Its
In, so-called " temporarily solidifying " indicates that the surface for being cured to membrane material is cured and forms protective film, but inside still keeps liquid
State.And so-called " formal solidification " expression solidifies the inside of membrane material also.Film is carried out by formal solidification device 40 (Fig. 1)
The formal solidification of material is handled.
It can be using the mechanism for keeping nozzle head 36 mobile relative to objective table 33 as mobile mechanism 32.That is, as movement
Mechanism 32 can use a machine relative to another movement for making to be held in the substrate 70 and nozzle head 36 of objective table 33
Structure.
Control device 60 includes film process portion 61, film thickness correction processing unit 62 and storage device 63.Film process portion 61
And the function of film thickness correction processing unit 62 is for example by making central processing unit (CPU) execution be stored in the calculating of storage device 63
Machine program is realized.Storage device 63 includes RAM and ROM.
Data needed for the formation of film are input in control device 60 by input unit 65.Number needed for the formation of film
Refer in comprising defining the film thickness of the image data of the flat shape (pattern) of film to be formed and the thickness of regulation film to be formed
Enable value etc..The image data, film thickness instruction value etc. are stored in storage device 63.Input unit 65 is filled by keyboard, Trackpad, communication
It sets, mobile storage means terminal etc. is constituted.The various processing results of control device 60 are output to output device 66.Output dress
66 are set to be made of display, printer etc..
While to the direction y moving substrate 70, according to image data from nozzle head 36 spue the membrane material through droplet treatment,
Thus, it is possible to the film with desired pattern is formed on the surface of substrate 70.Interim solidification is lighted in discharge membrane material to use up
Source 37.Therefore, the membrane material for being attached to substrate 70 lands on substrate 70 and is temporarily solidified immediately later.By adjusting from nozzle head
36 spue the volume of drop, distribution density, the recoating number of membrane material of landing point of drop on the surface of substrate 70 etc.,
The thickness of film can be changed.
Then, with reference to Fig. 3 to Fig. 4 C, the film forming method of embodiment is illustrated.Fig. 3 indicates that the film of embodiment is formed
The flow chart of method, Fig. 4 A to Fig. 4 C indicate film forming method intermediate stage and film formed after substrate and film cross-sectional view.
In step S1 (Fig. 3), operator is defined by input unit 65 (Fig. 2) to the input of control device 60 to be formed
The image data of the pattern of film and the film thickness instruction value for providing film thickness.The image data and film thickness instruction value inputted is stored in
Storage device 63 (Fig. 2).
In step s 2, film thickness correction processing unit 62 (Fig. 2) is mended according to the film thickness correction information for being stored in storage device 63
Positive film thickness instruction value, thereby determines that film thickness targets value.Film thickness targets value is slightly thicker than film thickness instruction value.As an example, film thickness makes corrections
Information is for example by indicating that the information from film thickness instruction value to the increment of film thickness targets value is constituted.Film thickness is added in film thickness instruction value
Increment represented by correction information calculates film thickness targets value.
In step s3, film process portion 61 (Fig. 2) controls nozzle head 36 and mobile mechanism 32, so that substrate 70 is moved to
Apparatus for coating 30 (Fig. 1) and the film for forming thickness specified by film thickness targets value determining in step s 2.For example, to the side y
While being held in substrate 70 of objective table 33 (Fig. 2) to movement, according to the image data for the pattern for defining film from nozzle head
36 membrane materials of the discharge through droplet treatment.Later, formal solidification dress is moved in from apparatus for coating 30 (Fig. 1) by the substrate 70 for being formed with film
40 are set, and formal solidification is carried out to film.
The partial sectional view of substrate 70 after film is formed is shown in Fig. 4 A.Film 71 is formed on the surface of substrate 70.Film
71 thickness is thicker than film thickness instruction value Tr, and is no better than film thickness targets value Tt.Sometimes it is attached on the opening portion of film 71 73
The droplet of the drop separation to be spued from nozzle head 36, is consequently formed satellite droplet 72.The thickness of satellite droplet 72 with to shape
The thickness of film forming 71 is compared to very thin, and up to 1 μm~3 μm or so.
In step S4 (Fig. 3), corona treatment is carried out to the whole surface of substrate 70.For example, as shown in Figure 4 B, it will
Substrate 70 is moved to plasma processing apparatus, and the whole surface of substrate 70 is exposed to plasma 75.As plasma
Body 75 uses the plasma for capableing of etching-film 71.Such as the reduction treatment for carrying out film 71 is able to use as plasma 75
Plasma.Example as the plasma for carrying out reduction treatment can enumerate the plasma comprising hydrogen.
The cross-sectional view of substrate after showing corona treatment in Fig. 4 C.By corona treatment, it is attached to substrate 70
The membrane material, that is, satellite droplet 72 (Fig. 4 B) in unnecessary region be completely removed.At this point, the surface section of film 71 is also removed, because
This film 71 is thinning.Step S2 correction processing used in film thickness correction information be predefined for film thickness instruction value Tr with
The difference of film thickness targets value Tt is substantially equal to the etched thickness of film 71.Therefore, the thickness of the film 71 after corona treatment is almost etc.
In film thickness instruction value Tr.
In step S5 (Fig. 3), the heat treatment of film 71 (Fig. 4 C) is carried out.By the heat treatment, solidify film 71 further.
In the above-described embodiments, satellite droplet 72 (Fig. 4 A) can be removed by the corona treatment in step S4.By
In to substrate 70 whole surface carry out corona treatment, there is no need to carry out for determine the presence or absence of satellite droplet 72 or its
The image analysis of position.The thickness of satellite droplet 72 is up to 1 μm~3 μm, therefore does not have the residual of satellite droplet 72, therefore excellent
Film thickness correction information is defined as from film thickness instruction value to the increment of film thickness targets value in 1 μm~3 μ ms by choosing.
In addition, in step s 2, estimating that the thickness of the surface section removed by corona treatment sets film thickness targets
Value Tt, therefore enable to the thickness of the film after corona treatment 71 and film thickness instruction value Tr substantially uniform.
Then, another embodiment is illustrated with reference to Fig. 5 A to Fig. 5 C.Hereinafter, implementing to shown in Fig. 1 to Fig. 4 C
The different point of example is illustrated, and is omitted to mutually isostructural explanation.
In the membrane formation device of embodiment shown in Fig. 5 A, be configured between apparatus for coating 30 and formal solidification device 40 etc.
Gas ions processing unit 80.The substrate 70 (Fig. 4 A) that film 71 (Fig. 4 A) is formd in apparatus for coating 30 passes through 50 quilt of conveying device
It is delivered to plasma processing apparatus 80.At this stage, the film 71 for being formed in substrate is in interim solid state.
By carrying out corona treatment in plasma processing apparatus 80, remove satellite droplet 72 (Fig. 4 B).Deng from
Daughter treated substrate 70 (Fig. 4 C) is transported to formal solidification device 40 by conveying device 50.In formal solidification device
The formal solidification processing of film 71 (Fig. 4 C) is carried out in 40.
Embodiment as shown in Figure 5A is such, can carry out at plasma in the state that film 71 is in interim solidification
Reason.At this point, by be temporarily formed by curing in the surface of film 71 protective film need have will not be complete because of corona treatment
It is removed the thickness of degree.
In the membrane formation device of embodiment shown in Fig. 5 B, the formal solidification device 40 of the membrane formation device shown in Fig. 5 A
Back segment be also configured with inversion set 83, apparatus for coating 30A, plasma processing apparatus 80A, formal solidification device 40A and heat
Processing unit 85.Inversion set 83 is moved in the substrate 70 (Fig. 4 C) that formal solidification device 40 terminates formal solidification processing
In.Inversion set 83 inverts upside down substrate 70.Be formed with as a result, film 71 (Fig. 4 C) facing towards lower section, film is not formed
Facing towards top.
The substrate 70 inverted upside down passes through apparatus for coating 30A, plasma processing apparatus 80A and formal solidification device 40A
Processing, overleaf also form film.Later, it is heat-treated in annealing device 85 to two-sided film is formed in.
It, can be in the two-sided formation film of substrate 70 in embodiment shown in Fig. 5 B.It, can also be in embodiment shown in Fig. 5 B
Before carrying out corona treatment by plasma processing apparatus 80,80A, carried out just by formal solidification device 40,40A
Formula curing process.
In the membrane formation device of embodiment shown in Fig. 5 C, eliminate plasma processing apparatus 80 shown in Fig. 5 B,
80A replaces, and double-sided plasma body processing unit is configured between formal solidification device 40A and annealing device 85
80B.In the embodiment, corona treatment to the two-sided of substrate 70 while being carried out by double-sided plasma body processing unit 80B.
Therefore, compared with the membrane formation device of the embodiment of Fig. 5 B, the processing time formed for film can be shortened.
The present invention is illustrated above according to embodiment, but the present invention is not limited thereto.For example, can make various changes, change
Good, combination etc., and this point will be understood by those skilled in the art.
Claims (7)
1. a kind of membrane formation device, includes
Objective table, for keeping substrate;
Nozzle head, it is opposed with the substrate of the objective table is held in, and towards the substrate spue the membrane material through droplet treatment
Material;
Mobile mechanism makes be held in the substrate and the nozzle head of the objective table one to move relative to another
It is dynamic;
It is characterized in that, also including
Storage device stores the image data and film thickness correction information of film to be formed;
Control device controls the nozzle head and the mobile mechanism according to described image data, is thus formed in the substrate
Film with pattern defined in described image data;And
Input unit is used for the control device input data,
If having film thickness instruction value from input unit input, the control device is according to film thickness correction information correction institute
Film thickness instruction value is stated, thus the film thickness targets value of film thickness instruction value thickness described in calculating ratio,
And the control device controls the nozzle head and the mobile mechanism, is equivalent to the film thickness targets value thickness to be formed
The film of degree.
2. membrane formation device according to claim 1, also includes
Plasma processing apparatus implements corona treatment to the substrate, thus the film that removal is formed on the substrate
Surface section;And
Conveying device, the substrate after the film for being held in the objective table is formed are moved to the plasma processing apparatus
In,
The control device controls the conveying device, so that the substrate after film is formed is moved at the plasma
It manages in device,
The film thickness correction information is defined as being gone according to the surface section of the film described in the plasma processing apparatus
Except thickness is set from the film thickness instruction value to the increment of the film thickness targets value.
3. membrane formation device according to claim 2, wherein
The plasma processing apparatus implements corona treatment to the whole surface for the substrate moved in.
4. membrane formation device according to claim 2 or 3, wherein
The film thickness correction information is defined as from the film thickness instruction value to the increment of the film thickness targets value at 1 μm~3 μm
In range.
5. membrane formation device according to claim 2 or 3, wherein
The reduction treatment using plasma is carried out in the plasma processing apparatus.
6. membrane formation device according to claim 4, wherein carry out utilizing etc. in the plasma processing apparatus from
The reduction treatment of daughter.
7. a kind of film forming method, with following process:
According to image data, film thickness correction information and film thickness instruction value from nozzle head towards the drop of substrate discharge membrane material, by
This forms the film with pattern defined in described image data, and the film has to make corrections described in information correction according to the film thickness
The thickness thicker than the film thickness instruction value obtained from film thickness instruction value;And
Corona treatment is carried out to the whole region for the substrate for being formed with the film, thus removal is attached to unnecessary area
The membrane material in domain.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2014208562 | 2014-10-10 | ||
JP2014-208562 | 2014-10-10 |
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CN105499069A CN105499069A (en) | 2016-04-20 |
CN105499069B true CN105499069B (en) | 2019-03-08 |
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JP (1) | JP6632300B2 (en) |
KR (1) | KR101753471B1 (en) |
CN (1) | CN105499069B (en) |
TW (1) | TWI575002B (en) |
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JP6862041B2 (en) * | 2016-08-10 | 2021-04-21 | 住友重機械工業株式会社 | Membrane forming method and film forming apparatus |
JP6925746B2 (en) * | 2017-12-15 | 2021-08-25 | 住友重機械工業株式会社 | Membrane forming device and film forming method |
JP7071231B2 (en) * | 2018-06-28 | 2022-05-18 | キヤノン株式会社 | Flattening device, flattening method, article manufacturing method, and method for creating droplet placement pattern data |
JP2021153085A (en) * | 2020-03-24 | 2021-09-30 | 株式会社Screenホールディングス | Pattern forming device, pattern forming method, and discharge data generation method |
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JP5214696B2 (en) * | 2010-09-27 | 2013-06-19 | 富士フイルム株式会社 | Pattern forming method, substrate manufacturing method, and mold manufacturing method |
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2015
- 2015-07-28 CN CN201510450812.0A patent/CN105499069B/en not_active Expired - Fee Related
- 2015-07-29 TW TW104124549A patent/TWI575002B/en active
- 2015-07-30 KR KR1020150107713A patent/KR101753471B1/en active IP Right Grant
- 2015-10-02 JP JP2015196370A patent/JP6632300B2/en active Active
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Publication number | Publication date |
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TWI575002B (en) | 2017-03-21 |
JP2016078019A (en) | 2016-05-16 |
KR101753471B1 (en) | 2017-07-03 |
TW201627361A (en) | 2016-08-01 |
JP6632300B2 (en) | 2020-01-22 |
CN105499069A (en) | 2016-04-20 |
KR20160042756A (en) | 2016-04-20 |
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