TWI503885B - Etching method and etching treatment device - Google Patents

Etching method and etching treatment device Download PDF

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Publication number
TWI503885B
TWI503885B TW099145407A TW99145407A TWI503885B TW I503885 B TWI503885 B TW I503885B TW 099145407 A TW099145407 A TW 099145407A TW 99145407 A TW99145407 A TW 99145407A TW I503885 B TWI503885 B TW I503885B
Authority
TW
Taiwan
Prior art keywords
gas
etching
cos
film
flow rate
Prior art date
Application number
TW099145407A
Other languages
English (en)
Chinese (zh)
Other versions
TW201137971A (en
Inventor
武川貴仁
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201137971A publication Critical patent/TW201137971A/zh
Application granted granted Critical
Publication of TWI503885B publication Critical patent/TWI503885B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas

Landscapes

  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW099145407A 2009-12-24 2010-12-23 Etching method and etching treatment device TWI503885B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009293094A JP5606060B2 (ja) 2009-12-24 2009-12-24 エッチング方法及びエッチング処理装置

Publications (2)

Publication Number Publication Date
TW201137971A TW201137971A (en) 2011-11-01
TWI503885B true TWI503885B (zh) 2015-10-11

Family

ID=44188073

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099145407A TWI503885B (zh) 2009-12-24 2010-12-23 Etching method and etching treatment device

Country Status (5)

Country Link
US (1) US8283254B2 (https=)
JP (1) JP5606060B2 (https=)
KR (1) KR101810970B1 (https=)
CN (1) CN102129983B (https=)
TW (1) TWI503885B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222852A (ja) 2012-04-17 2013-10-28 Tokyo Electron Ltd 有機膜をエッチングする方法及びプラズマエッチング装置
JP6817692B2 (ja) * 2015-08-27 2021-01-20 東京エレクトロン株式会社 プラズマ処理方法
JP2017092376A (ja) 2015-11-16 2017-05-25 東京エレクトロン株式会社 エッチング方法
JP6820206B2 (ja) * 2017-01-24 2021-01-27 東京エレクトロン株式会社 被加工物を処理する方法
KR102372892B1 (ko) 2017-08-10 2022-03-10 삼성전자주식회사 집적회로 소자의 제조 방법
JP7229033B2 (ja) * 2019-02-01 2023-02-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN111679454B (zh) * 2020-06-19 2023-07-07 联合微电子中心有限责任公司 半导体器件的制备方法
JP7783760B2 (ja) * 2022-02-24 2025-12-10 株式会社トリケミカル研究所 膜製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090087996A1 (en) * 2007-09-27 2009-04-02 Lam Research Corporation Line width roughness control with arc layer open
US20090212010A1 (en) * 2008-02-21 2009-08-27 Judy Wang Plasma etching carbonaceous layers with sulfur-based etchants

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116533B2 (ja) * 1992-04-08 2000-12-11 ソニー株式会社 ドライエッチング方法
CN1107342C (zh) * 1997-01-21 2003-04-30 松下电器产业株式会社 图案形成方法
JP4034164B2 (ja) * 2002-10-28 2008-01-16 富士通株式会社 微細パターンの作製方法及び半導体装置の製造方法
JP2008028022A (ja) * 2006-07-19 2008-02-07 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP4912907B2 (ja) * 2007-02-06 2012-04-11 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP2009152586A (ja) 2007-12-24 2009-07-09 Hynix Semiconductor Inc 半導体装置の製造方法
KR20090069122A (ko) * 2007-12-24 2009-06-29 주식회사 하이닉스반도체 반도체 장치의 제조방법
JP2009193988A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法及びコンピュータ記憶媒体
US8394722B2 (en) * 2008-11-03 2013-03-12 Lam Research Corporation Bi-layer, tri-layer mask CD control
US8986561B2 (en) * 2008-12-26 2015-03-24 Tokyo Electron Limited Substrate processing method and storage medium
US20110079918A1 (en) * 2009-10-01 2011-04-07 Applied Materials, Inc. Plasma-based organic mask removal with silicon fluoride

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090087996A1 (en) * 2007-09-27 2009-04-02 Lam Research Corporation Line width roughness control with arc layer open
US20090212010A1 (en) * 2008-02-21 2009-08-27 Judy Wang Plasma etching carbonaceous layers with sulfur-based etchants

Also Published As

Publication number Publication date
KR101810970B1 (ko) 2017-12-20
US20110159697A1 (en) 2011-06-30
JP5606060B2 (ja) 2014-10-15
US8283254B2 (en) 2012-10-09
CN102129983B (zh) 2012-11-21
TW201137971A (en) 2011-11-01
KR20110074455A (ko) 2011-06-30
JP2011134896A (ja) 2011-07-07
CN102129983A (zh) 2011-07-20

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