CN102129983B - 蚀刻方法及蚀刻处理装置 - Google Patents

蚀刻方法及蚀刻处理装置 Download PDF

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Publication number
CN102129983B
CN102129983B CN2010106218007A CN201010621800A CN102129983B CN 102129983 B CN102129983 B CN 102129983B CN 2010106218007 A CN2010106218007 A CN 2010106218007A CN 201010621800 A CN201010621800 A CN 201010621800A CN 102129983 B CN102129983 B CN 102129983B
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China
Prior art keywords
gas
etching
film
cos
flow rate
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Expired - Fee Related
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CN2010106218007A
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English (en)
Chinese (zh)
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CN102129983A (zh
Inventor
武川贵仁
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas

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  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN2010106218007A 2009-12-24 2010-12-24 蚀刻方法及蚀刻处理装置 Expired - Fee Related CN102129983B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009293094A JP5606060B2 (ja) 2009-12-24 2009-12-24 エッチング方法及びエッチング処理装置
JP2009-293094 2009-12-24

Publications (2)

Publication Number Publication Date
CN102129983A CN102129983A (zh) 2011-07-20
CN102129983B true CN102129983B (zh) 2012-11-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010106218007A Expired - Fee Related CN102129983B (zh) 2009-12-24 2010-12-24 蚀刻方法及蚀刻处理装置

Country Status (5)

Country Link
US (1) US8283254B2 (https=)
JP (1) JP5606060B2 (https=)
KR (1) KR101810970B1 (https=)
CN (1) CN102129983B (https=)
TW (1) TWI503885B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222852A (ja) 2012-04-17 2013-10-28 Tokyo Electron Ltd 有機膜をエッチングする方法及びプラズマエッチング装置
JP6817692B2 (ja) * 2015-08-27 2021-01-20 東京エレクトロン株式会社 プラズマ処理方法
JP2017092376A (ja) 2015-11-16 2017-05-25 東京エレクトロン株式会社 エッチング方法
JP6820206B2 (ja) * 2017-01-24 2021-01-27 東京エレクトロン株式会社 被加工物を処理する方法
KR102372892B1 (ko) 2017-08-10 2022-03-10 삼성전자주식회사 집적회로 소자의 제조 방법
JP7229033B2 (ja) * 2019-02-01 2023-02-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN111679454B (zh) * 2020-06-19 2023-07-07 联合微电子中心有限责任公司 半导体器件的制备方法
JP7783760B2 (ja) * 2022-02-24 2025-12-10 株式会社トリケミカル研究所 膜製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101471236A (zh) * 2007-12-24 2009-07-01 海力士半导体有限公司 制造半导体器件的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116533B2 (ja) * 1992-04-08 2000-12-11 ソニー株式会社 ドライエッチング方法
CN1107342C (zh) * 1997-01-21 2003-04-30 松下电器产业株式会社 图案形成方法
JP4034164B2 (ja) * 2002-10-28 2008-01-16 富士通株式会社 微細パターンの作製方法及び半導体装置の製造方法
JP2008028022A (ja) * 2006-07-19 2008-02-07 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP4912907B2 (ja) * 2007-02-06 2012-04-11 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
WO2009042438A1 (en) * 2007-09-27 2009-04-02 Lam Research Corporation Line width roughness control with arc layer open
JP2009152586A (ja) 2007-12-24 2009-07-09 Hynix Semiconductor Inc 半導体装置の製造方法
JP2009193988A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法及びコンピュータ記憶媒体
US8133819B2 (en) * 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
US8394722B2 (en) * 2008-11-03 2013-03-12 Lam Research Corporation Bi-layer, tri-layer mask CD control
US8986561B2 (en) * 2008-12-26 2015-03-24 Tokyo Electron Limited Substrate processing method and storage medium
US20110079918A1 (en) * 2009-10-01 2011-04-07 Applied Materials, Inc. Plasma-based organic mask removal with silicon fluoride

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101471236A (zh) * 2007-12-24 2009-07-01 海力士半导体有限公司 制造半导体器件的方法

Also Published As

Publication number Publication date
KR101810970B1 (ko) 2017-12-20
US20110159697A1 (en) 2011-06-30
JP5606060B2 (ja) 2014-10-15
US8283254B2 (en) 2012-10-09
TW201137971A (en) 2011-11-01
KR20110074455A (ko) 2011-06-30
JP2011134896A (ja) 2011-07-07
CN102129983A (zh) 2011-07-20
TWI503885B (zh) 2015-10-11

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Granted publication date: 20121121

Termination date: 20201224