TWI495965B - 用於自半導體裝置晶圓清除經植入離子之光阻之剝離組合物 - Google Patents
用於自半導體裝置晶圓清除經植入離子之光阻之剝離組合物 Download PDFInfo
- Publication number
- TWI495965B TWI495965B TW099105486A TW99105486A TWI495965B TW I495965 B TWI495965 B TW I495965B TW 099105486 A TW099105486 A TW 099105486A TW 99105486 A TW99105486 A TW 99105486A TW I495965 B TWI495965 B TW I495965B
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- Prior art keywords
- acid
- composition
- weight
- phosphonic acid
- nitric acid
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 102
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 29
- 238000004140 cleaning Methods 0.000 title claims description 24
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 235000012431 wafers Nutrition 0.000 title description 15
- -1 nitronium ions Chemical class 0.000 claims description 60
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 58
- 229910017604 nitric acid Inorganic materials 0.000 claims description 57
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 52
- 239000002253 acid Substances 0.000 claims description 47
- 238000005260 corrosion Methods 0.000 claims description 36
- 230000007797 corrosion Effects 0.000 claims description 36
- 239000003112 inhibitor Substances 0.000 claims description 34
- 239000002904 solvent Substances 0.000 claims description 32
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 26
- 229910002651 NO3 Inorganic materials 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 11
- 239000007983 Tris buffer Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- DZQNHNNOBZXRSR-UHFFFAOYSA-N 1,5,9-triazacyclododec-9-ene Chemical compound C1CNCCCN=CCCNC1 DZQNHNNOBZXRSR-UHFFFAOYSA-N 0.000 claims description 3
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- BJAJDJDODCWPNS-UHFFFAOYSA-N dotp Chemical compound O=C1N2CCOC2=NC2=C1SC=C2 BJAJDJDODCWPNS-UHFFFAOYSA-N 0.000 claims description 3
- 229910020366 ClO 4 Inorganic materials 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 125000001047 cyclobutenyl group Chemical group C1(=CCC1)* 0.000 claims 3
- HWEQKSVYKBUIIK-UHFFFAOYSA-N cyclobuta-1,3-diene Chemical group C1=CC=C1 HWEQKSVYKBUIIK-UHFFFAOYSA-N 0.000 claims 2
- WQZGBRMJDARPCY-UHFFFAOYSA-I [Nb+5].[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F Chemical compound [Nb+5].[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F WQZGBRMJDARPCY-UHFFFAOYSA-I 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims 1
- 230000005764 inhibitory process Effects 0.000 claims 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 claims 1
- HIQXJRBKNONWAH-UHFFFAOYSA-N methylidenephosphane Chemical compound P=C HIQXJRBKNONWAH-UHFFFAOYSA-N 0.000 claims 1
- YGZIDGORJKNFDL-UHFFFAOYSA-M nitronium perchlorate Chemical compound O=[N+]=O.[O-]Cl(=O)(=O)=O YGZIDGORJKNFDL-UHFFFAOYSA-M 0.000 claims 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical compound NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 claims 1
- 239000000243 solution Substances 0.000 description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 12
- 229910052718 tin Inorganic materials 0.000 description 12
- 238000009472 formulation Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 7
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000007921 spray Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- XSIFPSYPOVKYCO-UHFFFAOYSA-N butyl benzoate Chemical compound CCCCOC(=O)C1=CC=CC=C1 XSIFPSYPOVKYCO-UHFFFAOYSA-N 0.000 description 2
- HQFQTTNMBUPQAY-UHFFFAOYSA-N cyclobutylhydrazine Chemical compound NNC1CCC1 HQFQTTNMBUPQAY-UHFFFAOYSA-N 0.000 description 2
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzyl ether Chemical compound C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- AVGQTJUPLKNPQP-UHFFFAOYSA-N 1,1,1-trichloropropane Chemical compound CCC(Cl)(Cl)Cl AVGQTJUPLKNPQP-UHFFFAOYSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 1
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UOZZAYDTNHHXLJ-UHFFFAOYSA-N C1(CCC1)C1=CC=CC=2C3=CC=CC=C3CC12 Chemical group C1(CCC1)C1=CC=CC=2C3=CC=CC=C3CC12 UOZZAYDTNHHXLJ-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- PYGXAGIECVVIOZ-UHFFFAOYSA-N Dibutyl decanedioate Chemical compound CCCCOC(=O)CCCCCCCCC(=O)OCCCC PYGXAGIECVVIOZ-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- VEZXCJBBBCKRPI-UHFFFAOYSA-N beta-propiolactone Chemical compound O=C1CCO1 VEZXCJBBBCKRPI-UHFFFAOYSA-N 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940105994 ethylhexyl acetate Drugs 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- OKJGFPGYBKPGPU-UHFFFAOYSA-N nitric acid;trifluoromethanesulfonic acid Chemical compound O[N+]([O-])=O.OS(=O)(=O)C(F)(F)F OKJGFPGYBKPGPU-UHFFFAOYSA-N 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 1
- 229940067157 phenylhydrazine Drugs 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical group CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 1
- ITHPEWAHFNDNIO-UHFFFAOYSA-N triphosphane Chemical compound PPP ITHPEWAHFNDNIO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/105—Nitrates; Nitrites
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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Description
本發明係關於一種剝離組合物及此剝離/清洗組合物於清洗經植入之光阻之方法中之用途,及其中該組合物係與矽、鈦、氮化鈦、鉭、及鎢相容。本發明剝離組合物係用於在離子植入步驟之後自半導體裝置表面移除經高能量/劑量離子植入之塊狀光阻,及避免剝離製程期間Si、Ti、TiN、W或Ta之蝕刻。
在整個半導體裝置之製造過程中,尤其係在前端加工期間進行多個離子植入步驟。在此製程期間,使用光阻掩蓋待植入區域,並將離子植入所需植入區域中。該植入體可係(例如)砷、硼或磷植入體。在此等步驟中所用的高能量離子碳化光阻外殼,脫水並交聯該光阻,且導致光阻環結構斷裂,並在該光阻之外表面內留下無機材料。此外殼使光阻極難移除,尤其係在高能量/高劑量植入體(如在源極/汲極植入體所用者)之情況下。經植入光阻通常係使用灰化,再用H2
SO4
及H2
O2
處理之組合自表面移除。亦可不經灰化地使用H2
SO4
及H2
O2
之混合物(SPM)。該等方法在較新技術節點下係非所需的,因為其無法滿足材料損失的要求,不完全移除經較高劑量植入之光阻,為耗時的方法並需要多個步驟。在記憶體裝置中,H2
SO4
/H2
O2
化學品因為其與鎢不相容故亦係非所需的。對於高-k
金屬閘極裝置,TiN、Ti及Ta相容性係非常重要的,尤其係因為目前的方法(如上述之SPM方法)與此等材料不相容。因此,需要用於移除經高能量/高劑量離子植入之光阻的獲改善之剝離組合物,其在剝離製程期間係與矽及亦與Ti、TiN、W或Ta相容。
本發明組合物係為在離子植入步驟後自微電子裝置表面剝離此經高能量及高劑量(>15原子/厘米)離子植入之光阻而不蝕刻矽、鎢、鈦、氮化鈦、或鉭。本發明組合物包括以下各者、基本上由以下各者組成、或係由以下各者組成:(1)一或多種溶劑,其閃點為>65℃,較佳>110℃,及更佳高於145℃及再更佳約165℃,及最佳為環丁碸,(2)至少一種提供硝鎓離子之組分,及(3)至少一種膦酸腐蝕抑制劑化合物。本發明組合物更佳包括以下各者、基本上由以下各者組成、或係由以下各者組成:(1)約10重量%至約94.99重量%之溶劑,(2)約5重量%至約90重量%之至少一種能提供硝鎓離子(NO2 +
)之組分,及(3)約0.01重量%至約5.0重量%之至少一種為膦酸化合物之腐蝕抑制劑。提供硝鎓離子之該組分可係(1)含有硝鎓鹽化合物之溶液,或(2)可係藉由硝酸或與比硝酸更強的酸(即,具有比硝酸更低的pKa或更高Ka的酸)混合的硝酸鹽以自硝酸或硝酸鹽產生硝鎓離子的方式提供。該組合物視情況可含有相關技藝通常已知的界面活性劑及金屬螯合劑。百分比係基於(1)該溶劑組分;(2)該硝鎓鹽化合物,或該強酸/硝酸或硝酸鹽化合物;及(3)該膦酸腐蝕抑制劑組分之總重量的重量百分比。
含有可用於本發明組合物中之硝鎓鹽化合物的溶液可係任何適宜的硝鎓鹽化合物之溶液。在該等適宜的硝鎓鹽化合物中,可述及四氟硼酸硝鎓鹽(NO2
BF4
)、過氯酸硝鎓鹽(NO2
ClO4
)、氟硫酸硝鎓鹽(NO2
SO3
F)、三氟甲磺酸硝鎓鹽(NO2
SO2
CF3
)及類似物。較佳係以四氟硼酸硝鎓鹽之溶液作為提供硝鎓離子之硝鎓鹽化合物。
任何適宜與比硝酸更強的酸混合時提供硝鎓離子之化合物可用於本發明組合物中。此等適於提供此硝鎓離子之化合物係硝酸及硝酸鹽。可使用任何適宜的硝酸鹽,如(例如)硝酸四烷基銨、硝酸鉀、硝酸鈉等。一般以硝酸為佳。為此目的,硝鎓離子係(如)根據以下平衡:
藉由強酸(即,具有比硝酸更低的pKa或更高Ka的酸)(如硫酸)與硝酸混合而(例如)於原位產生。
可使用任何適宜强於硝酸之酸作為該酸而與硝酸或硝酸鹽化合物一起提供本發明組合物之硝鎓離子。作為此等强於硝酸之酸的實例,可述及(例如)硫酸、三氟甲磺酸、四氟硼酸等。此強酸相對該組合物之其餘組分(即溶劑、硝酸或硝酸鹽、及膦酸腐蝕抑制劑)之重量比係約20:1至約1:10之強酸/其餘組分之比例,較佳為約10:1至約1:10之強酸/調配物之比例,及更佳為約9:2至約1:5之強酸/其餘組分之比例,又更佳為9:2之強酸/其餘組分之比例。
本發明組合物中可使用任何適宜的膦酸腐蝕抑制劑。適宜的膦酸腐蝕抑制劑中,可述及(例如)胺基三亞甲基膦酸、二伸乙基三胺五(亞甲基膦酸)(DETPA)、N,N,N',N'-伸乙基二胺四(亞甲基膦酸)、1,5,9-三氮雜環十二烷-N,N',N"-三(亞甲基膦酸)(DOTRP)、1,4,7,10-四氮雜環十二烷-N,N',N",N'''-肆(亞甲基膦酸)(DOTP)、氮基三(亞甲基)三膦酸、二伸乙基三胺五(亞甲基膦酸)(DETAP)、胺基三(亞甲基膦酸)、1-羥基伸乙基-1,1-二膦酸、雙(六亞甲基)三胺膦酸、1,4,7-三氮雜環壬烷-N,N',N"-三(亞甲基膦酸)(NOTP)等。較佳的膦酸腐蝕抑制劑係胺基三亞甲基膦酸。如果需要,可使用最少量之水(一般少於該組合物之總重量之約5重量%)與膦酸腐蝕抑制劑以提高其溶解度。但是較佳係不使用水。
該組合物可使用至少一種或多種之任何適宜溶劑,其閃點高於65℃,較佳為高於110℃,更佳為高於145℃,及最佳為約165℃或以上,且與強酸相容。用於本發明組合物中之適宜溶劑之實例包括(但不限於)以下示例溶劑:3-胺基-1-丙醇、苯甲酸丁酯、二甲基亞碸、乙酸乙基己酯、己酸、異佛酮、甲基苯胺、硝基苯、氧雜環丁酮、苯基肼、丙二醇、水楊醛、四氫萘、四甲基脲、三氯丙烷、三甲基磷酸酯、及閃點為65℃與109℃之間的十一碳烷、氯萘、二苄基醚、馬來酸二乙酯、戊二醇、苯氧基乙醇、碳酸丙烯酯、十四碳烷、及閃點為110℃與144℃之間的磷酸三乙酯、癸二酸二丁酯、苯二甲酸二甲酯、甘油、環丁碸及閃點>145℃的三乙二醇。該至少一種溶劑較佳為環丁碸。
在本發明之一項實施例中,該剝離組合物有效清洗經離子植入之光阻係發生於該光阻與本發明組合物於任何適於移除該經離子植入之光阻的時間及溫度下接觸後。此清洗一般將在約65℃至約160℃之溫度下及至多約40分鐘(一般係少於約2分鐘,其取決於所用的特定組合物及待移除的特定經離子植入之光阻)的時間範圍內發生。熟習此項技術者將容易確定基於所用特定組合物及其所用方式,及在植入製程中所用離子劑量及植入能量的時間及溫度。
本發明特佳調配物係彼等含有約49.75重量%環丁碸、約49.75重量%硝酸(70%)、及約0.50重量%胺基三亞甲基膦酸者。將此調配物與强於硝酸之酸混合,較佳與硫酸以約9:2之硫酸相對該組合物之其餘組分的重量比混合。
本發明較佳實施例係將該溶劑、強酸(如果使用)、及視情況選用之該膦酸腐蝕抑制劑加熱至本發明所需剝離溫度以上之溫度,及隨後將本發明之硝鎓鹽化合物或硝酸或硝酸鹽化合物添加至所加熱的組分,即再進行剝離操作。待添加至所加熱的組分酸之硝鎓鹽化合物或硝酸或硝酸鹽化合物一般將保持在約室溫之溫度下,之後再將其添加至所加熱的組分。視情況該膦酸腐蝕抑制劑及/或溶劑可與硝鎓鹽化合物或硝酸或硝酸鹽化合物聯用替代與強酸一起加熱。加熱該硝鎓鹽化合物或硝酸或硝酸鹽化合物至>100℃之溫度,再將其與溶劑混合,否則溶劑與強酸可導致所得本發明組合物之剝離性能顯著不想要的損失。此外,在發生清洗製程所需的溫度下,一種溶液中所有所需組分之混合物係非常不安定,且因此在使用該完成組合物之前不應有可觀儲存時間。
一種獲得本發明組合物且在使用該完成組合物之前不需任何明顯儲存時間的方法係保持兩或更多個具有某些組合物組分之容器,其中該等容器係以以下方式連接:容器之組分係在其即將用作微電子裝置之剝離劑/清洗劑之前才合併(即,混合在一起)。更特定言之,可形成本發明組合物,其中已將該溶劑、强於硝酸之酸、及膦酸腐蝕抑制劑組分中之至少一或多者加熱至待用於清洗經離子植入之光阻的溫度以上之溫度,且該組合物係藉由使所加熱的組分與已保持在約室溫之溫度下或已加熱至低於100℃(較佳約25℃)之溫度下之硝酸或硝酸鹽組分混合而形成。尤其佳者係該組合物係在該組合物用作自半導體裝置表面之經植入高劑量離子之光阻的清洗劑之前約5分鐘或更少之時間內,使所有該組合物之組分混合在一起而形成。一種用於相同目的之此設備將包括多個經由管線連接至噴霧裝置之容器,其中該等容器之組分係恰好在該噴霧裝置之噴頭之前合併。多個容器可含有一或多種呈已加熱或若所需呈未加熱形式之組合物組分。例如,第一容器可含有溫度保持在約165℃之強酸,第二容器為約110℃之溶劑及腐蝕抑制劑,及第三容器具有約25℃之硝酸。在另一項實施例中,第一容器可含有溫度為約165℃之大部分強酸,第二容器係溫度為約110℃之溶劑、小部分強酸、腐蝕抑制劑、及水,及第三容器係溫度為約25℃之硝酸。另一項實施例包括一含有加熱至約165℃之溫度之溶劑及強酸的第一容器,及含有室溫下之硝酸及膦酸腐蝕抑制劑之第二容器。一般而言,所有組分皆經加熱至適宜溫度以便在混合後獲得所需使用(剝離)溫度。一般而言,在各項可能實施例中,該等容器之組分係在其用於清洗製程之約5分鐘內混合,及混合組分之溫度係在約145℃至約165℃之範圍內。所用溫度將取決於組合物之組分及用於獲得經植入塊狀光阻之離子劑量及離子植入能量。
任何可能的容器組分之組合一般係可能的,條件為強酸(如硫酸)與硝酸或硝酸鹽不係在相同容器中且硝酸或硝酸鹽一般加熱至不高於約100℃,較佳不高於約25℃。本發明之一態樣係並非所有組分皆加熱至清洗溫度。各種組分僅需加熱至一所得混合物之溫度在混合後達到所需清洗溫度之點。示例(但不限於)以下組分容器之實例,其可藉由連接至噴霧裝置而用於本發明之清洗製程中。
實例1
較佳實例係如下3種溶液之混合物。
容器1-在165℃下之25%硫酸;容器2-在110℃下之44%溶劑(環丁碸)、4%硫酸、2%腐蝕抑制劑(胺基三亞甲基膦酸);及容器3-在25℃下之25%硝酸。
將3個容器之組分在清洗受關注之晶圓之5分鐘內混合。混合溫度為約145℃至165℃。清洗晶圓0.5至5分鐘,其取決於離子劑量及離子植入能量。與W(<0.1/min)、TiN(1.4/min)、及Ta(<0.1/min)相容。
實例2
另一較佳3種溶液混合物係如下。添加水以在延長儲存期間將腐蝕抑制劑保持於溶液中。
容器1-在165℃下之25%硫酸;容器2-在110℃下之40%溶劑(環丁碸)、3.64%硫酸、1.82%腐蝕抑制劑(胺基三亞甲基膦酸)、及4.54%水;及容器3-在25℃下之25%硝酸。
將三種溶液在清洗受關注之晶圓之5分鐘內混合。混合溫度為約145℃至165℃。清洗晶圓0.5至5分鐘,其取決於離子劑量及離子植入能量。
實例3
另一較佳3種溶液之實施例如下。
容器1-在165℃下之20%硫酸;容器2-在110℃下之64%溶劑(環丁碸)、4.0%硫酸、2.0%腐蝕抑制劑(胺基三亞甲基膦酸);及容器3-在25℃下之10%硝酸。
將三種溶液在清洗受關注之晶圓之5分鐘內混合。混合溫度為約145℃至165℃。清洗晶圓0.5至5分鐘,其取決於離子劑量及離子植入能量。與TiN(0.21/min)相容。
實例4
另一較佳3種溶液之實施例如下。
容器1-在165℃下之10%硫酸;容器2-在110℃下之64%溶劑(環丁碸)、4.0%硫酸、2.0%腐蝕抑制劑(胺基三亞甲基膦酸)、及4.54%水;及容器3-在25℃下之20%硝酸。
將三種溶液在清洗受關注之晶圓之5分鐘內混合。混合溫度為約145℃至165℃。清洗晶圓0.5至5分鐘,其取決於離子劑量及離子植入能量。與TiN(<0.10/min)相容。
實例5
另一較佳2種溶液之實施例如下。
容器1-26%硫酸、44%環丁碸(165℃);及容器2-室溫下之26% HNO3
、4%腐蝕抑制劑(胺基三亞甲基膦酸)。
將三種溶液在清洗受關注之晶圓之5分鐘內混合。混合溫度為約145℃至165℃。清洗晶圓0.5至5分鐘,其取決於離子劑量及離子植入能量。與TiN相容(1.38/min)。
本發明組合物之剝離及非腐蝕性能係藉由(但不限於)以下利用下列本發明組合物之測試結果進行說明。測試中所用之本發明組合物係藉使(1)含有約49.75重量%環丁碸、約49.85重量%硝酸(70%)、及約0.50重量%胺基三亞甲基膦酸之室溫調配物與(2)以約9:2之硫酸相對組合物其餘組分之重量比加熱至剝離溫度的硫酸混合而形成之組合物。將經砷、磷及硼離子植入之晶圓立即以該等組合物溶液處理約2至3分鐘之時間。清洗係藉由光學顯微鏡及SEM測定。結果載於表1中。
以本發明組合物所獲得之清洗係與以SPM所獲得者相當,但無以SPM清洗所遇到之腐蝕。
表2描述優化性能之H2
SO4
與環丁碸/硝酸之混合物。清洗經離子植入之光阻係在經高劑量植入之晶圓(5×1015
至1×1016
原子As/cm2
,10 keV)上進行。將組分全部混合在一起且隨後加熱之。將經離子植入之光阻晶圓以此等調配物在85℃下清洗40分鐘,並對清洗性能給予0或1(1係乾淨及0係一點也不乾淨)之分數。此表2中之數據表明為達最佳清洗性能,混合物中需要>50% H2
SO4
。除此以外,清洗需要硝酸。
獲得本發明組合物之W、Ti、TiN及Ta之可能蝕刻之蝕刻速率數據,其中該組合物係藉由使(1)含有約49.75重量%環丁碸、約49.75重量%硝酸(70%)、及約0.50重量%胺基三亞甲基膦酸之室溫調配物與(2)以約9:2之硫酸相對組合物其餘組分之重量比之加熱至65℃、90℃、及140℃之剝離溫度之硫酸混合所形成。本發明組合物之蝕刻速率之結果在相同清洗溫度下類似於SPM(5重量份之經加熱的H2
SO4
/1重量份添加至所加熱的H2
SO4
之室溫H2
O2
)之蝕刻速率。立即將測試金屬之金屬件浸沒於所形成的測試組合物中以經蝕刻速率處理。蝕刻速率(以埃/分鐘計)係利用四點探針測量厚度所測得。此等表3中之結果顯示對於低溫清洗,本發明剝離組合物相較於以SPM所獲得之金屬相容性對於所有彼等測試金屬顯示較佳金屬相容性。在高溫下,本發明組合物對於W及Ta顯示獲改善之金屬相容性。
環丁碸及膦酸腐蝕抑制劑為調配物中所需以提供低TiN蝕刻速率。測定對於組合物之所有蝕刻速率,在該組合物中將H2
SO4
加熱至85℃,隨後在室溫下加入調配物之其他組分。在2分鐘內測定蝕刻速率。表4顯示不同類型之本發明含硝酸調配物/H2
SO4
之混合物的TiN蝕刻速率。顯然地,環丁碸及膦酸腐蝕抑制劑兩者必須保持低TiN蝕刻速率。相反地,SPM在85℃下混合時對於TiN顯示不可接受的>150/min之蝕刻速率。
Si蝕刻相容性係藉由組合物處理矽膜5分鐘所測得,該組合物係藉由使(1)含有約49.75重量%環丁碸、約49.75重量%硝酸(70%)、及約0.50重量%胺基三亞甲基膦酸之室溫調配物與(2)以約9:2之硫酸相對組合物其餘組分之重量比且已加熱至140℃之剝離溫度的硫酸混合所形成。對於相同晶圓片,重複此製程20分鐘。在此等處理之後,如藉由截面SEM所量得,無可測量之矽蝕刻存在。
雖然已在本文中藉由參考本發明之特定實施例而描述本發明,但是應瞭解:在不偏離本文所揭示之發明內容之精神與範圍下,可作改變、改良及變化。因此,其意欲涵蓋所有此等屬於附屬請求項之精神及範圍內的改變、改良及變化。
Claims (19)
- 一種用於自半導體裝置表面移除經植入高劑量離子之光阻之組合物,該組合物包括:至少一種閃點>65℃之溶劑,其中該溶劑係以約10重量%至約94.99重量%之量存在,至少一種提供硝鎓離子之組分,其中該至少一種提供硝鎓離子之組分係以約0.01重量%至約89.99重量%之量存在,及至少一種膦酸腐蝕抑制劑化合物,其中該至少一種膦酸腐蝕抑制劑化合物係以約0.01重量%至約5.0重量%之量存在,其中該重量%係基於該至少一種溶劑、該至少一種提供硝鎓離子之組分、及該至少一種膦酸腐蝕抑制劑化合物之總重量。
- 如請求項1之組合物,其中該至少一種溶劑係環丁碸。
- 如請求項1之組合物,其中該至少一種提供硝鎓離子之組分係選自由以下各者組成之群之硝鎓鹽化合物:四氟硼酸硝鎓鹽(NO2 BF4 )、過氯酸硝鎓鹽(NO2 ClO4 )、氟硫酸硝鎓鹽(NO2 SO3 F)、三氟甲磺酸硝鎓鹽(NO2 SO2 CF3 )。
- 如請求項1之組合物,其中該膦酸腐蝕抑制劑化合物係選自由以下各者組成之群:胺基三亞甲基膦酸、二伸乙基三胺五(亞甲基膦酸)(DETPA)、N,N,N',N'-伸乙基二胺四(亞甲基膦酸)、1,5,9-三氮雜環十二烷-N,N',N"-三(亞甲基膦酸)(DOTRP)、1,4,7,10-四氮雜環十二烷-N,N',N",N'''-肆(亞甲基膦酸)(DOTP)、氮基三(亞甲基)三膦酸、二伸 乙基三胺五(亞甲基膦酸)(DETAP)、胺基三(亞甲基膦酸)、1-羥基伸乙基-1,1-二膦酸、雙(六亞甲基)三胺膦酸、及1,4,7-三氮雜環壬烷-N,N',N"-三(亞甲基膦酸)(NOTP)。
- 如請求項1之組合物,其中該至少一種溶劑係環丁碸,該硝鎓鹽化合物係四氟硼酸硝鎓鹽,且該膦酸腐蝕抑制劑化合物係胺基三亞甲基膦酸。
- 如請求項1之組合物,其包括:至少一種閃點>65℃之溶劑,至少一種提供硝鎓離子且選自由硝酸及硝酸鹽組成之群之組分,至少一種膦酸腐蝕抑制劑,及一種强於硝酸之酸,其中該强於硝酸之酸具有比硝酸低之pKa或比硝酸高之Ka。
- 如請求項6之組合物,其中該溶劑係環丁碸。
- 如請求項6之組合物,其中該强於硝酸之酸係選自由硫酸、三氟甲磺酸、及四氟硼酸組成之群。
- 如請求項6之組合物,其中該至少一種提供硝鎓離子之組分係硝酸。
- 如請求項6之組合物,其中該膦酸腐蝕抑制劑化合物係選自由以下各者組成之群:胺基三亞甲基膦酸、二伸乙基三胺五(亞甲基膦酸)(DETPA)、N,N,N',N'-伸乙基二胺四(亞甲基膦酸)、1,5,9-三氮雜環十二烷-N,N',N"-三(亞甲基膦酸)(DOTRP)、1,4,7,10-四氮雜環十二烷-N,N',N",N'''- 肆(亞甲基膦酸)(DOTP)、氮基三(亞甲基)三膦酸、二伸乙基三胺五(亞甲基膦酸)(DETAP)、胺基三(亞甲基膦酸)、1-羥基伸乙基-1,1-二膦酸、雙(六亞甲基)三胺膦酸、及1,4,7-三氮雜環壬烷-N,N',N"-三(亞甲基膦酸)(NOTP)。
- 如請求項6之組合物,其中該至少一種溶劑係環丁碸,該强於硝酸之酸係硫酸,該膦酸腐蝕抑制劑化合物係胺基三亞甲基膦酸,及該至少一種提供硝鎓離子之組分係硝酸。
- 如請求項6之組合物,其中該强於硝酸之酸相對該組合物其餘組分之重量比係約20:1至1:10。
- 如請求項12之組合物,其中該强於硝酸之酸係硫酸及硫酸/該組合物其餘組分之重量比係約9:2。
- 如請求項6之組合物,其包括:約49.75重量%之環丁碸、約49.75重量%之硝酸(70%)、及約0.50重量%之胺基三亞甲基膦酸,該等組分係以約9:2之硫酸對該等組分之重量比與硫酸混合。
- 如請求項6之組合物,其中已將該溶劑、該强於硝酸之酸、及該膦酸腐蝕抑制劑組分中之至少一或多種加熱至高於欲用於清洗經離子植入之光阻之溫度的溫度,且該組合物係藉由使該經加熱的組分與已保持在約室溫之溫度下的提供硝鎓離子之組分混合所形成。
- 如請求項15之組合物,其中該組合物係在其待用作半導 體裝置表面之經植入高劑量離子之光阻的清洗劑之前約5分鐘或更短時間藉由將該組合物之所有組分混合在一起所形成。
- 一種用於自半導體裝置表面移除經植入高劑量離子之光阻之方法,該方法包括使該經植入高劑量離子之光阻與請求項1至16中之任一項之組合物在足以移除該光阻之溫度下接觸一段足以移除該光阻之時間。
- 一種添加至硝酸或硝酸鹽中以形成含有硝鎓離子之另一組合物之組合物,該組合物包括:至少一種閃點>65℃之溶劑,其中該溶劑係以約10重量%至約94.99重量%之量存在,至少一種膦酸腐蝕抑制劑,其中該至少一種膦酸腐蝕抑制劑化合物係以約0.01重量%至約5.0重量%之量存在,一種强於硝酸之酸,其中該强於硝酸之酸具有比硝酸低之pKa或比硝酸高之Ka及係以約0.01重量%至約89.99重量%之量存在,及其中該重量%係基於該至少一種溶劑、該至少一種膦酸腐蝕抑制劑、及該强於硝酸之酸之總重量,及視情況選用的水,其量基於該組合物之總重量係小於5重量%。
- 如請求項18之組合物,其中該至少一種溶劑係環丁碸,該至少一種膦酸腐蝕抑制劑係胺基三亞甲基膦酸及該强於硝酸之酸係硫酸。
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2011
- 2011-08-18 IL IL214730A patent/IL214730A0/en unknown
- 2011-09-22 ZA ZA2011/06934A patent/ZA201106934B/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200523690A (en) * | 2003-10-29 | 2005-07-16 | Mallinckrodt Baker Inc | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
TW200534054A (en) * | 2004-03-01 | 2005-10-16 | Mallinckrodt Baker Inc | Nanoelectronic and microelectronic cleaning compositions |
TW200831645A (en) * | 2006-10-24 | 2008-08-01 | Kanto Kagaku | Photoresist residue and polymer residue removing liquid composition |
Also Published As
Publication number | Publication date |
---|---|
JP2012518716A (ja) | 2012-08-16 |
EP2401352A2 (en) | 2012-01-04 |
RU2011139105A (ru) | 2013-04-10 |
SG173833A1 (en) | 2011-09-29 |
JP5622752B2 (ja) | 2014-11-12 |
WO2010099017A3 (en) | 2010-10-28 |
EP2401352B1 (en) | 2013-06-12 |
CA2753435A1 (en) | 2010-09-02 |
ZA201106934B (en) | 2012-05-30 |
BRPI1008034A2 (pt) | 2016-03-15 |
KR101752924B1 (ko) | 2017-07-03 |
US8497233B2 (en) | 2013-07-30 |
KR20110129431A (ko) | 2011-12-01 |
US20120028871A1 (en) | 2012-02-02 |
AU2010218275A1 (en) | 2011-10-20 |
MX2011008789A (es) | 2011-09-29 |
WO2010099017A2 (en) | 2010-09-02 |
TW201040674A (en) | 2010-11-16 |
IL214730A0 (en) | 2011-11-30 |
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