TWI495152B - 發光二極體及其製造方法 - Google Patents
發光二極體及其製造方法 Download PDFInfo
- Publication number
- TWI495152B TWI495152B TW101133919A TW101133919A TWI495152B TW I495152 B TWI495152 B TW I495152B TW 101133919 A TW101133919 A TW 101133919A TW 101133919 A TW101133919 A TW 101133919A TW I495152 B TWI495152 B TW I495152B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- layer
- emitting diode
- structure portion
- mesa
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 230000001681 protective effect Effects 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 86
- 239000004065 semiconductor Substances 0.000 claims description 67
- 150000001875 compounds Chemical class 0.000 claims description 62
- 238000001039 wet etching Methods 0.000 claims description 48
- 238000005530 etching Methods 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 230000002829 reductive effect Effects 0.000 claims description 17
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical group [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 10
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000011148 porous material Substances 0.000 claims description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 515
- 239000000463 material Substances 0.000 description 61
- 238000005253 cladding Methods 0.000 description 37
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 29
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
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- 238000007740 vapor deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
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- 230000002265 prevention Effects 0.000 description 4
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- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 238000000635 electron micrograph Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- OCVXZQOKBHXGRU-UHFFFAOYSA-N iodine(1+) Chemical compound [I+] OCVXZQOKBHXGRU-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- MQBKFPBIERIQRQ-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene;cyclopentane Chemical compound [Mg+2].C=1C=C[CH-]C=1.[CH-]1[CH-][CH-][CH-][CH-]1 MQBKFPBIERIQRQ-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011204618A JP5961359B2 (ja) | 2011-09-20 | 2011-09-20 | 発光ダイオード及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201318205A TW201318205A (zh) | 2013-05-01 |
| TWI495152B true TWI495152B (zh) | 2015-08-01 |
Family
ID=48180540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101133919A TWI495152B (zh) | 2011-09-20 | 2012-09-17 | 發光二極體及其製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5961359B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101445451B1 (enrdf_load_stackoverflow) |
| CN (1) | CN203218312U (enrdf_load_stackoverflow) |
| TW (1) | TWI495152B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10038031B2 (en) | 2016-04-22 | 2018-07-31 | Au Optronics Corporation | Micro light emitting diode structure, pixel unit, and light emitting diode display panel |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150101783A (ko) | 2014-02-27 | 2015-09-04 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조 방법 |
| CN106935689A (zh) * | 2015-12-31 | 2017-07-07 | 比亚迪股份有限公司 | 倒装芯片及其制备方法和照明设备 |
| CN109994582B (zh) * | 2018-01-02 | 2020-08-25 | 山东华光光电子股份有限公司 | 一种降低GaAs基外延片翘曲度的DBR结构 |
| WO2019191134A1 (en) * | 2018-03-26 | 2019-10-03 | Lawrence Livermore National Security, Llc | Engineered current-density profile diode laser |
| TWI661584B (zh) * | 2018-05-18 | 2019-06-01 | 光磊科技股份有限公司 | 發光晶粒、封裝結構及其相關製造方法 |
| CN110690337B (zh) * | 2019-09-29 | 2021-07-09 | 维沃移动通信有限公司 | 一种闪光灯结构及电子设备 |
| CN120076514A (zh) * | 2019-10-08 | 2025-05-30 | 厦门三安光电有限公司 | 一种发光二极管 |
| US20250267986A1 (en) * | 2024-02-19 | 2025-08-21 | Seoul Viosys Co., Ltd. | Light emitting device and light emitting apparatus including the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201034250A (en) * | 2008-12-25 | 2010-09-16 | Showa Denko Kk | Semiconductor light-emitting device and production method of semiconductor light-emitting device, and lamp |
| TW201126761A (en) * | 2009-11-05 | 2011-08-01 | Showa Denko Kk | Semiconductor light emitting element and method for manufacturing semiconductor light emitting element |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2310316A (en) * | 1996-02-15 | 1997-08-20 | Sharp Kk | Semiconductor laser |
| JP2002289920A (ja) * | 2001-03-27 | 2002-10-04 | Kyocera Corp | Ｌｅｄアレイおよびその製造方法 |
| JP2006190854A (ja) | 2005-01-07 | 2006-07-20 | Sony Corp | 発光ダイオード |
| JP2006302919A (ja) * | 2005-04-15 | 2006-11-02 | Sony Corp | 面発光型半導体レーザおよびその製造方法 |
| KR100982988B1 (ko) | 2008-05-14 | 2010-09-17 | 삼성엘이디 주식회사 | 수직구조 반도체 발광소자 및 그 제조방법 |
| KR101497953B1 (ko) * | 2008-10-01 | 2015-03-05 | 삼성전자 주식회사 | 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
| JP2011124314A (ja) * | 2009-12-09 | 2011-06-23 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| KR101055766B1 (ko) | 2009-12-14 | 2011-08-11 | 서울옵토디바이스주식회사 | 반사기들을 갖는 발광 다이오드 칩 |
| KR101654340B1 (ko) * | 2009-12-28 | 2016-09-06 | 서울바이오시스 주식회사 | 발광 다이오드 |
-
2011
- 2011-09-20 JP JP2011204618A patent/JP5961359B2/ja not_active Expired - Fee Related
-
2012
- 2012-09-17 KR KR1020120102669A patent/KR101445451B1/ko not_active Expired - Fee Related
- 2012-09-17 TW TW101133919A patent/TWI495152B/zh not_active IP Right Cessation
- 2012-09-20 CN CN2012204833792U patent/CN203218312U/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201034250A (en) * | 2008-12-25 | 2010-09-16 | Showa Denko Kk | Semiconductor light-emitting device and production method of semiconductor light-emitting device, and lamp |
| TW201126761A (en) * | 2009-11-05 | 2011-08-01 | Showa Denko Kk | Semiconductor light emitting element and method for manufacturing semiconductor light emitting element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10038031B2 (en) | 2016-04-22 | 2018-07-31 | Au Optronics Corporation | Micro light emitting diode structure, pixel unit, and light emitting diode display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201318205A (zh) | 2013-05-01 |
| KR20130031211A (ko) | 2013-03-28 |
| KR101445451B1 (ko) | 2014-09-26 |
| CN203218312U (zh) | 2013-09-25 |
| JP5961359B2 (ja) | 2016-08-02 |
| JP2013065785A (ja) | 2013-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |