JP5961359B2 - 発光ダイオード及びその製造方法 - Google Patents

発光ダイオード及びその製造方法 Download PDF

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Publication number
JP5961359B2
JP5961359B2 JP2011204618A JP2011204618A JP5961359B2 JP 5961359 B2 JP5961359 B2 JP 5961359B2 JP 2011204618 A JP2011204618 A JP 2011204618A JP 2011204618 A JP2011204618 A JP 2011204618A JP 5961359 B2 JP5961359 B2 JP 5961359B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
emitting diode
light
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011204618A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013065785A (ja
JP2013065785A5 (enrdf_load_stackoverflow
Inventor
範行 粟飯原
範行 粟飯原
典孝 村木
典孝 村木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2011204618A priority Critical patent/JP5961359B2/ja
Priority to KR1020120102669A priority patent/KR101445451B1/ko
Priority to TW101133919A priority patent/TWI495152B/zh
Priority to CN2012204833792U priority patent/CN203218312U/zh
Publication of JP2013065785A publication Critical patent/JP2013065785A/ja
Publication of JP2013065785A5 publication Critical patent/JP2013065785A5/ja
Application granted granted Critical
Publication of JP5961359B2 publication Critical patent/JP5961359B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
JP2011204618A 2011-09-20 2011-09-20 発光ダイオード及びその製造方法 Expired - Fee Related JP5961359B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011204618A JP5961359B2 (ja) 2011-09-20 2011-09-20 発光ダイオード及びその製造方法
KR1020120102669A KR101445451B1 (ko) 2011-09-20 2012-09-17 발광 다이오드 및 그의 제조 방법
TW101133919A TWI495152B (zh) 2011-09-20 2012-09-17 發光二極體及其製造方法
CN2012204833792U CN203218312U (zh) 2011-09-20 2012-09-20 发光二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011204618A JP5961359B2 (ja) 2011-09-20 2011-09-20 発光ダイオード及びその製造方法

Publications (3)

Publication Number Publication Date
JP2013065785A JP2013065785A (ja) 2013-04-11
JP2013065785A5 JP2013065785A5 (enrdf_load_stackoverflow) 2013-05-30
JP5961359B2 true JP5961359B2 (ja) 2016-08-02

Family

ID=48180540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011204618A Expired - Fee Related JP5961359B2 (ja) 2011-09-20 2011-09-20 発光ダイオード及びその製造方法

Country Status (4)

Country Link
JP (1) JP5961359B2 (enrdf_load_stackoverflow)
KR (1) KR101445451B1 (enrdf_load_stackoverflow)
CN (1) CN203218312U (enrdf_load_stackoverflow)
TW (1) TWI495152B (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150101783A (ko) 2014-02-27 2015-09-04 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
CN106935689A (zh) * 2015-12-31 2017-07-07 比亚迪股份有限公司 倒装芯片及其制备方法和照明设备
TWI588985B (zh) 2016-04-22 2017-06-21 友達光電股份有限公司 微型發光二極體結構及其畫素單元與發光二極體顯示面板
CN109994582B (zh) * 2018-01-02 2020-08-25 山东华光光电子股份有限公司 一种降低GaAs基外延片翘曲度的DBR结构
WO2019191134A1 (en) * 2018-03-26 2019-10-03 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser
TWI661584B (zh) * 2018-05-18 2019-06-01 光磊科技股份有限公司 發光晶粒、封裝結構及其相關製造方法
CN110690337B (zh) * 2019-09-29 2021-07-09 维沃移动通信有限公司 一种闪光灯结构及电子设备
CN120076514A (zh) * 2019-10-08 2025-05-30 厦门三安光电有限公司 一种发光二极管
US20250267986A1 (en) * 2024-02-19 2025-08-21 Seoul Viosys Co., Ltd. Light emitting device and light emitting apparatus including the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2310316A (en) * 1996-02-15 1997-08-20 Sharp Kk Semiconductor laser
JP2002289920A (ja) * 2001-03-27 2002-10-04 Kyocera Corp Ｌｅｄアレイおよびその製造方法
JP2006190854A (ja) 2005-01-07 2006-07-20 Sony Corp 発光ダイオード
JP2006302919A (ja) * 2005-04-15 2006-11-02 Sony Corp 面発光型半導体レーザおよびその製造方法
KR100982988B1 (ko) 2008-05-14 2010-09-17 삼성엘이디 주식회사 수직구조 반도체 발광소자 및 그 제조방법
KR101497953B1 (ko) * 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
JP2010153581A (ja) * 2008-12-25 2010-07-08 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP5526712B2 (ja) * 2009-11-05 2014-06-18 豊田合成株式会社 半導体発光素子
JP2011124314A (ja) * 2009-12-09 2011-06-23 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
KR101055766B1 (ko) 2009-12-14 2011-08-11 서울옵토디바이스주식회사 반사기들을 갖는 발광 다이오드 칩
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드

Also Published As

Publication number Publication date
TW201318205A (zh) 2013-05-01
KR20130031211A (ko) 2013-03-28
KR101445451B1 (ko) 2014-09-26
CN203218312U (zh) 2013-09-25
JP2013065785A (ja) 2013-04-11
TWI495152B (zh) 2015-08-01

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