KR101445451B1 - 발광 다이오드 및 그의 제조 방법 - Google Patents

발광 다이오드 및 그의 제조 방법 Download PDF

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Publication number
KR101445451B1
KR101445451B1 KR1020120102669A KR20120102669A KR101445451B1 KR 101445451 B1 KR101445451 B1 KR 101445451B1 KR 1020120102669 A KR1020120102669 A KR 1020120102669A KR 20120102669 A KR20120102669 A KR 20120102669A KR 101445451 B1 KR101445451 B1 KR 101445451B1
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South Korea
Prior art keywords
layer
light emitting
emitting diode
mesa structure
protective film
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Expired - Fee Related
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KR1020120102669A
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English (en)
Korean (ko)
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KR20130031211A (ko
Inventor
노리유키 아이하라
노리타카 무라키
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쇼와 덴코 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
KR1020120102669A 2011-09-20 2012-09-17 발광 다이오드 및 그의 제조 방법 Expired - Fee Related KR101445451B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011204618A JP5961359B2 (ja) 2011-09-20 2011-09-20 発光ダイオード及びその製造方法
JPJP-P-2011-204618 2011-09-20

Publications (2)

Publication Number Publication Date
KR20130031211A KR20130031211A (ko) 2013-03-28
KR101445451B1 true KR101445451B1 (ko) 2014-09-26

Family

ID=48180540

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120102669A Expired - Fee Related KR101445451B1 (ko) 2011-09-20 2012-09-17 발광 다이오드 및 그의 제조 방법

Country Status (4)

Country Link
JP (1) JP5961359B2 (enrdf_load_stackoverflow)
KR (1) KR101445451B1 (enrdf_load_stackoverflow)
CN (1) CN203218312U (enrdf_load_stackoverflow)
TW (1) TWI495152B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019191134A1 (en) * 2018-03-26 2019-10-03 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150101783A (ko) 2014-02-27 2015-09-04 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
CN106935689A (zh) * 2015-12-31 2017-07-07 比亚迪股份有限公司 倒装芯片及其制备方法和照明设备
TWI588985B (zh) 2016-04-22 2017-06-21 友達光電股份有限公司 微型發光二極體結構及其畫素單元與發光二極體顯示面板
CN109994582B (zh) * 2018-01-02 2020-08-25 山东华光光电子股份有限公司 一种降低GaAs基外延片翘曲度的DBR结构
TWI661584B (zh) * 2018-05-18 2019-06-01 光磊科技股份有限公司 發光晶粒、封裝結構及其相關製造方法
CN110690337B (zh) * 2019-09-29 2021-07-09 维沃移动通信有限公司 一种闪光灯结构及电子设备
CN120076514A (zh) * 2019-10-08 2025-05-30 厦门三安光电有限公司 一种发光二极管
US20250267986A1 (en) * 2024-02-19 2025-08-21 Seoul Viosys Co., Ltd. Light emitting device and light emitting apparatus including the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190854A (ja) 2005-01-07 2006-07-20 Sony Corp 発光ダイオード
KR20100037381A (ko) * 2008-10-01 2010-04-09 삼성전자주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
KR100982988B1 (ko) 2008-05-14 2010-09-17 삼성엘이디 주식회사 수직구조 반도체 발광소자 및 그 제조방법
KR101055766B1 (ko) 2009-12-14 2011-08-11 서울옵토디바이스주식회사 반사기들을 갖는 발광 다이오드 칩

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2310316A (en) * 1996-02-15 1997-08-20 Sharp Kk Semiconductor laser
JP2002289920A (ja) * 2001-03-27 2002-10-04 Kyocera Corp Ｌｅｄアレイおよびその製造方法
JP2006302919A (ja) * 2005-04-15 2006-11-02 Sony Corp 面発光型半導体レーザおよびその製造方法
JP2010153581A (ja) * 2008-12-25 2010-07-08 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP5526712B2 (ja) * 2009-11-05 2014-06-18 豊田合成株式会社 半導体発光素子
JP2011124314A (ja) * 2009-12-09 2011-06-23 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190854A (ja) 2005-01-07 2006-07-20 Sony Corp 発光ダイオード
KR100982988B1 (ko) 2008-05-14 2010-09-17 삼성엘이디 주식회사 수직구조 반도체 발광소자 및 그 제조방법
KR20100037381A (ko) * 2008-10-01 2010-04-09 삼성전자주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
KR101055766B1 (ko) 2009-12-14 2011-08-11 서울옵토디바이스주식회사 반사기들을 갖는 발광 다이오드 칩

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019191134A1 (en) * 2018-03-26 2019-10-03 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser
US11658460B2 (en) 2018-03-26 2023-05-23 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser
US11942759B2 (en) 2018-03-26 2024-03-26 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser

Also Published As

Publication number Publication date
TW201318205A (zh) 2013-05-01
KR20130031211A (ko) 2013-03-28
CN203218312U (zh) 2013-09-25
JP5961359B2 (ja) 2016-08-02
JP2013065785A (ja) 2013-04-11
TWI495152B (zh) 2015-08-01

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