TWI492283B - 液體處理裝置及液體處理方法 - Google Patents

液體處理裝置及液體處理方法 Download PDF

Info

Publication number
TWI492283B
TWI492283B TW100145336A TW100145336A TWI492283B TW I492283 B TWI492283 B TW I492283B TW 100145336 A TW100145336 A TW 100145336A TW 100145336 A TW100145336 A TW 100145336A TW I492283 B TWI492283 B TW I492283B
Authority
TW
Taiwan
Prior art keywords
substrate
wafer
ejection
diw
holding
Prior art date
Application number
TW100145336A
Other languages
English (en)
Chinese (zh)
Other versions
TW201246324A (en
Inventor
東島治郎
伊藤規宏
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201246324A publication Critical patent/TW201246324A/zh
Application granted granted Critical
Publication of TWI492283B publication Critical patent/TWI492283B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
TW100145336A 2011-01-25 2011-12-08 液體處理裝置及液體處理方法 TWI492283B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011013458A JP5646354B2 (ja) 2011-01-25 2011-01-25 液処理装置および液処理方法

Publications (2)

Publication Number Publication Date
TW201246324A TW201246324A (en) 2012-11-16
TWI492283B true TWI492283B (zh) 2015-07-11

Family

ID=46543268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100145336A TWI492283B (zh) 2011-01-25 2011-12-08 液體處理裝置及液體處理方法

Country Status (4)

Country Link
US (1) US9396975B2 (enExample)
JP (1) JP5646354B2 (enExample)
KR (1) KR101521322B1 (enExample)
TW (1) TWI492283B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5926086B2 (ja) * 2012-03-28 2016-05-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9805946B2 (en) * 2013-08-30 2017-10-31 Taiwan Semiconductor Manufacturing Company Limited Photoresist removal
US9460944B2 (en) * 2014-07-02 2016-10-04 SCREEN Holdings Co., Ltd. Substrate treating apparatus and method of treating substrate
JP6376863B2 (ja) * 2014-07-02 2018-08-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6320945B2 (ja) * 2015-01-30 2018-05-09 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP6456712B2 (ja) * 2015-02-16 2019-01-23 東京エレクトロン株式会社 基板保持機構及びこれを用いた基板処理装置
KR101619166B1 (ko) * 2015-06-12 2016-05-18 카즈오 스기하라 기판의 세정·건조 처리 장치
KR101880232B1 (ko) * 2015-07-13 2018-07-19 주식회사 제우스 기판 액처리 장치 및 방법
US10720343B2 (en) 2016-05-31 2020-07-21 Lam Research Ag Method and apparatus for processing wafer-shaped articles
TWI733875B (zh) * 2016-08-10 2021-07-21 美商維克儀器公司 雙層式的膠帶框架的清洗組件
SG11201903502WA (en) * 2016-10-25 2019-05-30 Acm Research Shanghai Inc Apparatus and method for wet process on semiconductor substrate
JP6815912B2 (ja) * 2017-03-23 2021-01-20 株式会社荏原製作所 洗浄装置及び基板処理装置
US11244841B2 (en) 2017-12-01 2022-02-08 Elemental Scientific, Inc. Systems for integrated decomposition and scanning of a semiconducting wafer
JP6996438B2 (ja) * 2018-07-11 2022-01-17 株式会社Sumco 半導体ウェーハの洗浄方法、および該洗浄方法を用いた半導体ウェーハの製造方法
KR102627828B1 (ko) * 2018-11-16 2024-01-23 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 장치의 세정 방법
KR102176209B1 (ko) * 2018-12-13 2020-11-09 주식회사 제우스 이물질 제거용 기판처리장치
JP7245059B2 (ja) * 2019-01-24 2023-03-23 株式会社ジェイ・イー・ティ 基板処理装置及び基板処理方法
KR102271566B1 (ko) * 2019-10-28 2021-07-01 세메스 주식회사 기판 처리 장치
WO2021211429A1 (en) 2020-04-16 2021-10-21 Elemental Scientific, Inc. Systems for integrated decomposition and scanning of a semiconducting wafer
KR102777613B1 (ko) * 2020-06-22 2025-03-12 주식회사 제우스 기판처리장치
WO2024014291A1 (ja) * 2022-07-12 2024-01-18 東京エレクトロン株式会社 基板処理方法、および基板処理装置
JP7572998B2 (ja) * 2022-08-26 2024-10-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI873069B (zh) * 2024-08-20 2025-02-11 積凱科技股份有限公司 風扇型吸盤

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW449774B (en) * 1998-12-22 2001-08-11 Steag Micro Tech Gmbh Apparatus and method for processing substrate
CN101079373A (zh) * 2006-05-25 2007-11-28 细美事有限公司 处理基材的设备和方法以及用于这种设备的喷头

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092784A (ja) * 1996-09-10 1998-04-10 Toshiba Microelectron Corp ウェーハ処理装置およびウェーハ処理方法
JP3563605B2 (ja) * 1998-03-16 2004-09-08 東京エレクトロン株式会社 処理装置
JP4357943B2 (ja) * 2003-12-02 2009-11-04 エス・イー・エス株式会社 基板処理法及び基板処理装置
JP2005353739A (ja) * 2004-06-09 2005-12-22 Dainippon Screen Mfg Co Ltd 基板洗浄装置
JP4734063B2 (ja) * 2005-08-30 2011-07-27 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
JP2007149892A (ja) * 2005-11-25 2007-06-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP4476217B2 (ja) * 2005-12-27 2010-06-09 大日本スクリーン製造株式会社 基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW449774B (en) * 1998-12-22 2001-08-11 Steag Micro Tech Gmbh Apparatus and method for processing substrate
CN101079373A (zh) * 2006-05-25 2007-11-28 细美事有限公司 处理基材的设备和方法以及用于这种设备的喷头

Also Published As

Publication number Publication date
KR20120086236A (ko) 2012-08-02
JP5646354B2 (ja) 2014-12-24
US9396975B2 (en) 2016-07-19
US20120186744A1 (en) 2012-07-26
KR101521322B1 (ko) 2015-05-18
JP2012156266A (ja) 2012-08-16
TW201246324A (en) 2012-11-16

Similar Documents

Publication Publication Date Title
TWI492283B (zh) 液體處理裝置及液體處理方法
TWI496200B (zh) 液體處理裝置及液體處理方法
JP5474840B2 (ja) 液処理装置および液処理方法
KR101583104B1 (ko) 액 처리 장치 및 액 처리 방법
TWI539548B (zh) 液體處理裝置及液體處理方法
KR101694568B1 (ko) 액처리 장치 및 액처리 방법
TWI524399B (zh) 液體處理裝置及液體處理方法
CN104517871B (zh) 基板处理装置以及基板处理方法
TWI547984B (zh) Liquid processing apparatus and liquid processing method
KR102740439B1 (ko) 기판 처리 장치 및 기판 처리 방법
JP2012156266A5 (enExample)
JP5606992B2 (ja) 液処理装置および液処理方法
JP5512508B2 (ja) 液処理装置および液処理方法
JP5642575B2 (ja) 液処理装置および液処理方法