JP5646354B2 - 液処理装置および液処理方法 - Google Patents

液処理装置および液処理方法 Download PDF

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Publication number
JP5646354B2
JP5646354B2 JP2011013458A JP2011013458A JP5646354B2 JP 5646354 B2 JP5646354 B2 JP 5646354B2 JP 2011013458 A JP2011013458 A JP 2011013458A JP 2011013458 A JP2011013458 A JP 2011013458A JP 5646354 B2 JP5646354 B2 JP 5646354B2
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JP
Japan
Prior art keywords
substrate
wafer
discharge
position facing
diw
Prior art date
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Application number
JP2011013458A
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English (en)
Japanese (ja)
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JP2012156266A5 (enExample
JP2012156266A (ja
Inventor
島 治 郎 東
島 治 郎 東
藤 規 宏 伊
藤 規 宏 伊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2011013458A priority Critical patent/JP5646354B2/ja
Priority to KR1020110119560A priority patent/KR101521322B1/ko
Priority to TW100145336A priority patent/TWI492283B/zh
Priority to US13/355,877 priority patent/US9396975B2/en
Publication of JP2012156266A publication Critical patent/JP2012156266A/ja
Publication of JP2012156266A5 publication Critical patent/JP2012156266A5/ja
Application granted granted Critical
Publication of JP5646354B2 publication Critical patent/JP5646354B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
JP2011013458A 2011-01-25 2011-01-25 液処理装置および液処理方法 Active JP5646354B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011013458A JP5646354B2 (ja) 2011-01-25 2011-01-25 液処理装置および液処理方法
KR1020110119560A KR101521322B1 (ko) 2011-01-25 2011-11-16 액처리 장치 및 액처리 방법
TW100145336A TWI492283B (zh) 2011-01-25 2011-12-08 液體處理裝置及液體處理方法
US13/355,877 US9396975B2 (en) 2011-01-25 2012-01-23 Liquid treatment apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011013458A JP5646354B2 (ja) 2011-01-25 2011-01-25 液処理装置および液処理方法

Publications (3)

Publication Number Publication Date
JP2012156266A JP2012156266A (ja) 2012-08-16
JP2012156266A5 JP2012156266A5 (enExample) 2013-05-02
JP5646354B2 true JP5646354B2 (ja) 2014-12-24

Family

ID=46543268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011013458A Active JP5646354B2 (ja) 2011-01-25 2011-01-25 液処理装置および液処理方法

Country Status (4)

Country Link
US (1) US9396975B2 (enExample)
JP (1) JP5646354B2 (enExample)
KR (1) KR101521322B1 (enExample)
TW (1) TWI492283B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5926086B2 (ja) * 2012-03-28 2016-05-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9805946B2 (en) * 2013-08-30 2017-10-31 Taiwan Semiconductor Manufacturing Company Limited Photoresist removal
US9460944B2 (en) * 2014-07-02 2016-10-04 SCREEN Holdings Co., Ltd. Substrate treating apparatus and method of treating substrate
JP6376863B2 (ja) * 2014-07-02 2018-08-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6320945B2 (ja) * 2015-01-30 2018-05-09 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP6456712B2 (ja) * 2015-02-16 2019-01-23 東京エレクトロン株式会社 基板保持機構及びこれを用いた基板処理装置
KR101619166B1 (ko) * 2015-06-12 2016-05-18 카즈오 스기하라 기판의 세정·건조 처리 장치
KR101880232B1 (ko) * 2015-07-13 2018-07-19 주식회사 제우스 기판 액처리 장치 및 방법
US10720343B2 (en) 2016-05-31 2020-07-21 Lam Research Ag Method and apparatus for processing wafer-shaped articles
TWI733875B (zh) * 2016-08-10 2021-07-21 美商維克儀器公司 雙層式的膠帶框架的清洗組件
SG11201903502WA (en) * 2016-10-25 2019-05-30 Acm Research Shanghai Inc Apparatus and method for wet process on semiconductor substrate
JP6815912B2 (ja) * 2017-03-23 2021-01-20 株式会社荏原製作所 洗浄装置及び基板処理装置
US11244841B2 (en) 2017-12-01 2022-02-08 Elemental Scientific, Inc. Systems for integrated decomposition and scanning of a semiconducting wafer
JP6996438B2 (ja) * 2018-07-11 2022-01-17 株式会社Sumco 半導体ウェーハの洗浄方法、および該洗浄方法を用いた半導体ウェーハの製造方法
KR102627828B1 (ko) * 2018-11-16 2024-01-23 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 장치의 세정 방법
KR102176209B1 (ko) * 2018-12-13 2020-11-09 주식회사 제우스 이물질 제거용 기판처리장치
JP7245059B2 (ja) * 2019-01-24 2023-03-23 株式会社ジェイ・イー・ティ 基板処理装置及び基板処理方法
KR102271566B1 (ko) * 2019-10-28 2021-07-01 세메스 주식회사 기판 처리 장치
WO2021211429A1 (en) 2020-04-16 2021-10-21 Elemental Scientific, Inc. Systems for integrated decomposition and scanning of a semiconducting wafer
KR102777613B1 (ko) * 2020-06-22 2025-03-12 주식회사 제우스 기판처리장치
WO2024014291A1 (ja) * 2022-07-12 2024-01-18 東京エレクトロン株式会社 基板処理方法、および基板処理装置
JP7572998B2 (ja) * 2022-08-26 2024-10-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI873069B (zh) * 2024-08-20 2025-02-11 積凱科技股份有限公司 風扇型吸盤

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092784A (ja) * 1996-09-10 1998-04-10 Toshiba Microelectron Corp ウェーハ処理装置およびウェーハ処理方法
JP3563605B2 (ja) * 1998-03-16 2004-09-08 東京エレクトロン株式会社 処理装置
DE19859466C2 (de) 1998-12-22 2002-04-25 Steag Micro Tech Gmbh Vorrichtung und Verfahren zum Behandeln von Substraten
JP4357943B2 (ja) * 2003-12-02 2009-11-04 エス・イー・エス株式会社 基板処理法及び基板処理装置
JP2005353739A (ja) * 2004-06-09 2005-12-22 Dainippon Screen Mfg Co Ltd 基板洗浄装置
JP4734063B2 (ja) * 2005-08-30 2011-07-27 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
JP2007149892A (ja) * 2005-11-25 2007-06-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP4476217B2 (ja) * 2005-12-27 2010-06-09 大日本スクリーン製造株式会社 基板処理装置
KR100706666B1 (ko) * 2006-05-25 2007-04-13 세메스 주식회사 기판을 처리하는 장치 및 방법, 그리고 이에 사용되는분사헤드

Also Published As

Publication number Publication date
KR20120086236A (ko) 2012-08-02
US9396975B2 (en) 2016-07-19
US20120186744A1 (en) 2012-07-26
TWI492283B (zh) 2015-07-11
KR101521322B1 (ko) 2015-05-18
JP2012156266A (ja) 2012-08-16
TW201246324A (en) 2012-11-16

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