TWI488992B - 用於強化熱絲化學氣相沉積製程中的鉭燈絲壽命的方法 - Google Patents

用於強化熱絲化學氣相沉積製程中的鉭燈絲壽命的方法 Download PDF

Info

Publication number
TWI488992B
TWI488992B TW100136766A TW100136766A TWI488992B TW I488992 B TWI488992 B TW I488992B TW 100136766 A TW100136766 A TW 100136766A TW 100136766 A TW100136766 A TW 100136766A TW I488992 B TWI488992 B TW I488992B
Authority
TW
Taiwan
Prior art keywords
filament
temperature
hydrogen
substrate
gas
Prior art date
Application number
TW100136766A
Other languages
English (en)
Chinese (zh)
Other versions
TW201229296A (en
Inventor
Bipin Thakur
Joe Griffith Cruz
Stefan Keller
Vikas Gujar
Ravindra Janu Patil
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201229296A publication Critical patent/TW201229296A/zh
Application granted granted Critical
Publication of TWI488992B publication Critical patent/TWI488992B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW100136766A 2010-10-22 2011-10-11 用於強化熱絲化學氣相沉積製程中的鉭燈絲壽命的方法 TWI488992B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40567010P 2010-10-22 2010-10-22
US13/267,309 US8709537B2 (en) 2010-10-22 2011-10-06 Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes

Publications (2)

Publication Number Publication Date
TW201229296A TW201229296A (en) 2012-07-16
TWI488992B true TWI488992B (zh) 2015-06-21

Family

ID=45973240

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100136766A TWI488992B (zh) 2010-10-22 2011-10-11 用於強化熱絲化學氣相沉積製程中的鉭燈絲壽命的方法

Country Status (7)

Country Link
US (1) US8709537B2 (enExample)
JP (1) JP5972885B2 (enExample)
KR (1) KR101594770B1 (enExample)
CN (1) CN103168115B (enExample)
SG (1) SG189201A1 (enExample)
TW (1) TWI488992B (enExample)
WO (1) WO2012054688A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US10794853B2 (en) 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW505987B (en) * 2000-07-28 2002-10-11 Applied Materials Inc Method and apparatus for depositing a tantalum-containing layer on a substrate
TW200522191A (en) * 2003-08-19 2005-07-01 Boc Group Inc Method for removing a composite coating containing tantalum deposition and arc sprayed aluminum from ceramic substrates
TW200607879A (en) * 2004-07-20 2006-03-01 Applied Materials Inc Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4919974A (en) * 1989-01-12 1990-04-24 Ford Motor Company Making diamond composite coated cutting tools
JPH11202099A (ja) 1998-01-13 1999-07-30 Nissin High Voltage Co Ltd 電子線加速器のクリーニング方法
JP2000269142A (ja) * 1999-03-17 2000-09-29 Sony Corp 窒化ガリウムエピタキシャル層の形成方法及び発光素子
EP1258914B1 (en) * 2000-09-14 2006-11-22 Japan as represented by President of Japan Advanced Institute of Science and Technology Heating element cvd device
KR20020083767A (ko) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정에서의 기판 세정 방법
CN1168847C (zh) * 2002-03-30 2004-09-29 燕山大学 MgB2超导薄膜的原位热丝化学气相沉积制备方法
US7220665B2 (en) 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
KR100927983B1 (ko) 2005-03-16 2009-11-24 가부시키가이샤 히다치 고쿠사이 덴키 기판처리방법 및 기판처리장치
US7727590B2 (en) * 2006-05-18 2010-06-01 California Institute Of Technology Robust filament assembly for a hot-wire chemical vapor deposition system
JP4308281B2 (ja) * 2007-04-23 2009-08-05 三洋電機株式会社 光起電力素子の製造方法
US8409351B2 (en) * 2007-08-08 2013-04-02 Sic Systems, Inc. Production of bulk silicon carbide with hot-filament chemical vapor deposition
US8043976B2 (en) * 2008-03-24 2011-10-25 Air Products And Chemicals, Inc. Adhesion to copper and copper electromigration resistance
CN101325153A (zh) * 2008-07-16 2008-12-17 上海大学 一种半导体基片热沉复合材料的制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW505987B (en) * 2000-07-28 2002-10-11 Applied Materials Inc Method and apparatus for depositing a tantalum-containing layer on a substrate
TW200522191A (en) * 2003-08-19 2005-07-01 Boc Group Inc Method for removing a composite coating containing tantalum deposition and arc sprayed aluminum from ceramic substrates
TW200607879A (en) * 2004-07-20 2006-03-01 Applied Materials Inc Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata

Also Published As

Publication number Publication date
WO2012054688A3 (en) 2012-06-07
KR101594770B1 (ko) 2016-02-26
SG189201A1 (en) 2013-05-31
US8709537B2 (en) 2014-04-29
KR20130141539A (ko) 2013-12-26
CN103168115A (zh) 2013-06-19
CN103168115B (zh) 2016-01-06
WO2012054688A2 (en) 2012-04-26
JP2013546178A (ja) 2013-12-26
US20120100312A1 (en) 2012-04-26
JP5972885B2 (ja) 2016-08-17
TW201229296A (en) 2012-07-16

Similar Documents

Publication Publication Date Title
JP5346904B2 (ja) 縦型成膜装置およびその使用方法
KR101976559B1 (ko) 핫 와이어 화학 기상 증착(ｈｗｃｖｄ) 챔버를 이용하여 기판의 표면을 세정하기 위한 방법들
CN101158032B (zh) 成膜装置及其使用方法
JP7402041B2 (ja) Ｃｖｄリアクタおよびｃｖｄリアクタの洗浄方法
JP6255335B2 (ja) 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP7575358B2 (ja) 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
US20030104141A1 (en) Dielectric barrier discharge process for depositing silicon nitride film on substrates
TWI488992B (zh) 用於強化熱絲化學氣相沉積製程中的鉭燈絲壽命的方法
JP6453637B2 (ja) クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
US20150275356A1 (en) Cleaning method of apparatus for forming amorphous silicon film, and method and apparatus for forming amorphous silicon film
US8642376B2 (en) Methods for depositing a material atop a substrate
KR102165710B1 (ko) 클리닝 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램
JPWO2019188128A1 (ja) 半導体装置の製造方法、基板処理装置およびプログラム
WO2011040173A1 (ja) 成膜装置および成膜方法、ならびに基板処理装置
US9530627B2 (en) Method for cleaning titanium alloy deposition
JP7064577B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
KR20030040119A (ko) 발열체 ｃｖｄ 장치 및 이것을 이용한 발열체 ｃｖｄ 방법
CN223780363U (zh) 化学气相沉积设备
US20250313933A1 (en) Method for operating film forming device and film forming device
JP4947682B2 (ja) 触媒線化学気相成長装置および触媒線化学気相成長装置における触媒線の再生方法
US20130251896A1 (en) Method of protecting component of film forming apparatus and film forming method
JP2003218046A (ja) 発熱体ｃｖｄ装置及びこれを用いた発熱体ｃｖｄ方法
JP2008211106A (ja) 半導体装置の製造方法、及び基板処理装置
JP2011119592A (ja) 半導体装置の製造方法および基板処理装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees