JP4308281B2 - 光起電力素子の製造方法 - Google Patents
光起電力素子の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000007789 gas Substances 0.000 claims description 140
- 239000003054 catalyst Substances 0.000 claims description 92
- 239000000463 material Substances 0.000 claims description 66
- 239000004065 semiconductor Substances 0.000 claims description 62
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 24
- 230000003197 catalytic effect Effects 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 15
- 230000001105 regulatory effect Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 description 112
- 229910021417 amorphous silicon Inorganic materials 0.000 description 65
- 239000000758 substrate Substances 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 150000002431 hydrogen Chemical class 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 239000010409 thin film Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Description
図1は、触媒線CVD装置の構成を示す概略図である。まず、図1を参照して、本発明の第1実施形態による半導体膜の製造に用いられる触媒線CVD装置の構成を説明する。
この第2実施形態では、上記第1実施形態と異なり、調圧ガスにより反応室内の調圧を行った後に材料ガスを導入する例を説明する。第2実施形態の半導体膜10の製造に用いられる触媒線CVD装置は、上記第1実施形態と同様であるので、説明を省略する。また、第2実施形態では、下地20がアモルファスシリコン膜である例を説明する。
第3実施形態では、触媒線4を加熱した後に調圧を行う上記第2実施形態と異なり、調圧を行った後、触媒線4の加熱を行う例を説明する。第3実施形態の半導体膜の製造に用いられる触媒線CVD装置は、上記第1および第2実施形態と同様であるので、説明を省略する。また、第3実施形態では、下地20が導電性および透光性を有する酸化錫(SnO2)などのTCO(Transparent Conductive Oxide:透明導電性酸化物)からなる透明導電膜である例を説明する。
図2は、本発明による半導体膜の製造方法により製造される薄膜系の光起電力素子を示す断面図である。第4実施形態では、上記第2および第3実施形態による半導体膜の製造方法を用いて、薄膜系の光起電力素子100を製造した例を説明する。まず、図2を参照して、本発明による半導体膜の製造方法により製造される薄膜系の光起電力素子100の構造を説明する。
図3は、本発明による半導体膜の製造方法により製造されるヘテロ接合型の光起電力素子を示す断面図である。第5実施形態では、上記第2および第3実施形態による半導体膜の製造方法を用いて、ヘテロ接合型の光起電力素子200を製造した例を説明する。まず、図3を参照して、本発明による半導体膜の製造方法により製造されるヘテロ接合型の光起電力素子200の構造を説明する。
10 半導体膜
20 下地
Claims (2)
- 加熱された触媒線により材料ガスを分解し、透明導電膜及び単結晶シリコンのいずれか一方の表面上に半導体膜を形成する工程を備える光起電力素子の製造方法であって、
水素を含まないか、または微量の水素を含みかつ分圧が50%以上の非水素ガスを含む調圧ガスを導入し、反応室内を所定の圧力に調圧する工程と、
前記調圧ガスの雰囲気内で触媒線を所定の温度以上に加熱する工程と、
前記触媒線を前記所定の温度以上に加熱した後に材料ガスを導入し、前記反応室内を前記材料ガスの雰囲気にする工程と、
加熱した前記触媒線により前記材料ガスを分解して透明導電膜及び単結晶シリコンのいずれか一方の表面上に半導体膜を形成する工程とを備える、光起電力素子の製造方法。 - 前記半導体膜を形成した後、前記材料ガスを排気する工程と、
前記材料ガスが実質的に排気された後、前記所定の温度以上に加熱されている触媒線への加熱を停止する工程とをさらに備える、請求項1に記載の光起電力素子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007112486A JP4308281B2 (ja) | 2007-04-23 | 2007-04-23 | 光起電力素子の製造方法 |
EP08251469.6A EP1986242B1 (en) | 2007-04-23 | 2008-04-18 | Method of manufacturing a photovoltaic element using hot wire CVD |
KR1020080037177A KR101444948B1 (ko) | 2007-04-23 | 2008-04-22 | 반도체막의 제조 방법 및 광기전력 소자의 제조 방법 |
US12/108,120 US7807495B2 (en) | 2007-04-23 | 2008-04-23 | Method of manufacturing semiconductor film and method of manufacturing photovoltaic element |
CN2008100912543A CN101295639B (zh) | 2007-04-23 | 2008-04-23 | 半导体膜的制造方法和光敏元件的制造方法 |
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JP2007112486A JP4308281B2 (ja) | 2007-04-23 | 2007-04-23 | 光起電力素子の製造方法 |
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JP2008270578A JP2008270578A (ja) | 2008-11-06 |
JP4308281B2 true JP4308281B2 (ja) | 2009-08-05 |
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JP2007112486A Expired - Fee Related JP4308281B2 (ja) | 2007-04-23 | 2007-04-23 | 光起電力素子の製造方法 |
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Country | Link |
---|---|
US (1) | US7807495B2 (ja) |
EP (1) | EP1986242B1 (ja) |
JP (1) | JP4308281B2 (ja) |
KR (1) | KR101444948B1 (ja) |
CN (1) | CN101295639B (ja) |
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JP5586199B2 (ja) * | 2009-10-02 | 2014-09-10 | 三洋電機株式会社 | 触媒cvd装置、膜の形成方法及び太陽電池の製造方法 |
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JP3453214B2 (ja) | 1995-03-15 | 2003-10-06 | 科学技術振興事業団 | 触媒cvd法による薄膜トランジスタの製造方法および薄膜トランジスタ |
JP3737221B2 (ja) * | 1996-09-06 | 2006-01-18 | 英樹 松村 | 薄膜作成方法及び薄膜作成装置 |
US20030164225A1 (en) * | 1998-04-20 | 2003-09-04 | Tadashi Sawayama | Processing apparatus, exhaust processing process and plasma processing |
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EP1369931A1 (en) * | 2002-06-03 | 2003-12-10 | Hitachi, Ltd. | Solar cell and its manufacturing method, metal plate for the same |
JP2005179744A (ja) * | 2003-12-19 | 2005-07-07 | Toshiba Corp | 触媒cvd装置及び触媒cvd法 |
JP2005179743A (ja) * | 2003-12-19 | 2005-07-07 | Toshiba Corp | 触媒cvd装置及び触媒cvd法 |
KR100688837B1 (ko) * | 2005-05-12 | 2007-03-02 | 삼성에스디아이 주식회사 | 결정질 실리콘 증착을 위한 화학기상증착장치 |
JP2007046135A (ja) | 2005-08-12 | 2007-02-22 | Seiko Instruments Inc | 薄膜製造方法 |
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Also Published As
Publication number | Publication date |
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CN101295639B (zh) | 2012-07-18 |
CN101295639A (zh) | 2008-10-29 |
KR101444948B1 (ko) | 2014-09-26 |
EP1986242A2 (en) | 2008-10-29 |
JP2008270578A (ja) | 2008-11-06 |
US7807495B2 (en) | 2010-10-05 |
KR20080095197A (ko) | 2008-10-28 |
US20080261348A1 (en) | 2008-10-23 |
EP1986242B1 (en) | 2017-07-05 |
EP1986242A3 (en) | 2010-07-21 |
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