CN103168115B - 用于增强热丝化学气相沉积工艺中的钽灯丝寿命的方法 - Google Patents

用于增强热丝化学气相沉积工艺中的钽灯丝寿命的方法 Download PDF

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Publication number
CN103168115B
CN103168115B CN201180050142.3A CN201180050142A CN103168115B CN 103168115 B CN103168115 B CN 103168115B CN 201180050142 A CN201180050142 A CN 201180050142A CN 103168115 B CN103168115 B CN 103168115B
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China
Prior art keywords
filament
tantanum
temperature
hydrogen
gas
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Expired - Fee Related
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CN201180050142.3A
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English (en)
Chinese (zh)
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CN103168115A (zh
Inventor
拜平·塔库尔
乔·格里菲思克鲁兹
斯蒂芬·凯勒
维卡斯·古扎尔
亚努·拉万德·帕蒂尔
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN201180050142.3A 2010-10-22 2011-10-20 用于增强热丝化学气相沉积工艺中的钽灯丝寿命的方法 Expired - Fee Related CN103168115B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40567010P 2010-10-22 2010-10-22
US61/405,670 2010-10-22
US13/267,309 2011-10-06
US13/267,309 US8709537B2 (en) 2010-10-22 2011-10-06 Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes
PCT/US2011/057022 WO2012054688A2 (en) 2010-10-22 2011-10-20 Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes

Publications (2)

Publication Number Publication Date
CN103168115A CN103168115A (zh) 2013-06-19
CN103168115B true CN103168115B (zh) 2016-01-06

Family

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Family Applications (1)

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CN201180050142.3A Expired - Fee Related CN103168115B (zh) 2010-10-22 2011-10-20 用于增强热丝化学气相沉积工艺中的钽灯丝寿命的方法

Country Status (7)

Country Link
US (1) US8709537B2 (enExample)
JP (1) JP5972885B2 (enExample)
KR (1) KR101594770B1 (enExample)
CN (1) CN103168115B (enExample)
SG (1) SG189201A1 (enExample)
TW (1) TWI488992B (enExample)
WO (1) WO2012054688A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US10794853B2 (en) 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
CN101325153A (zh) * 2008-07-16 2008-12-17 上海大学 一种半导体基片热沉复合材料的制备方法
JP2009177191A (ja) * 2005-03-16 2009-08-06 Hitachi Kokusai Electric Inc 基板処理方法及び基板処理装置

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US4919974A (en) * 1989-01-12 1990-04-24 Ford Motor Company Making diamond composite coated cutting tools
JPH11202099A (ja) 1998-01-13 1999-07-30 Nissin High Voltage Co Ltd 電子線加速器のクリーニング方法
JP2000269142A (ja) * 1999-03-17 2000-09-29 Sony Corp 窒化ガリウムエピタキシャル層の形成方法及び発光素子
US6627050B2 (en) * 2000-07-28 2003-09-30 Applied Materials, Inc. Method and apparatus for depositing a tantalum-containing layer on a substrate
EP1258914B1 (en) * 2000-09-14 2006-11-22 Japan as represented by President of Japan Advanced Institute of Science and Technology Heating element cvd device
KR20020083767A (ko) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정에서의 기판 세정 방법
CN1168847C (zh) * 2002-03-30 2004-09-29 燕山大学 MgB2超导薄膜的原位热丝化学气相沉积制备方法
US7097713B2 (en) * 2003-08-19 2006-08-29 The Boc Group, Inc. Method for removing a composite coating containing tantalum deposition and arc sprayed aluminum from ceramic substrates
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US7727590B2 (en) * 2006-05-18 2010-06-01 California Institute Of Technology Robust filament assembly for a hot-wire chemical vapor deposition system
JP4308281B2 (ja) * 2007-04-23 2009-08-05 三洋電機株式会社 光起電力素子の製造方法
US8409351B2 (en) * 2007-08-08 2013-04-02 Sic Systems, Inc. Production of bulk silicon carbide with hot-filament chemical vapor deposition
US8043976B2 (en) * 2008-03-24 2011-10-25 Air Products And Chemicals, Inc. Adhesion to copper and copper electromigration resistance

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
JP2009177191A (ja) * 2005-03-16 2009-08-06 Hitachi Kokusai Electric Inc 基板処理方法及び基板処理装置
CN101325153A (zh) * 2008-07-16 2008-12-17 上海大学 一种半导体基片热沉复合材料的制备方法

Also Published As

Publication number Publication date
WO2012054688A3 (en) 2012-06-07
KR101594770B1 (ko) 2016-02-26
SG189201A1 (en) 2013-05-31
US8709537B2 (en) 2014-04-29
KR20130141539A (ko) 2013-12-26
CN103168115A (zh) 2013-06-19
WO2012054688A2 (en) 2012-04-26
JP2013546178A (ja) 2013-12-26
TWI488992B (zh) 2015-06-21
US20120100312A1 (en) 2012-04-26
JP5972885B2 (ja) 2016-08-17
TW201229296A (en) 2012-07-16

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