SG189201A1 - Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes - Google Patents
Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes Download PDFInfo
- Publication number
- SG189201A1 SG189201A1 SG2013024179A SG2013024179A SG189201A1 SG 189201 A1 SG189201 A1 SG 189201A1 SG 2013024179 A SG2013024179 A SG 2013024179A SG 2013024179 A SG2013024179 A SG 2013024179A SG 189201 A1 SG189201 A1 SG 189201A1
- Authority
- SG
- Singapore
- Prior art keywords
- filament
- temperature
- gas
- hwcvd
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 122
- 238000004050 hot filament vapor deposition Methods 0.000 title claims abstract description 51
- 229910052715 tantalum Inorganic materials 0.000 title claims description 17
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 17
- 230000002708 enhancing effect Effects 0.000 title description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 12
- 239000012159 carrier gas Substances 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40567010P | 2010-10-22 | 2010-10-22 | |
| US13/267,309 US8709537B2 (en) | 2010-10-22 | 2011-10-06 | Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes |
| PCT/US2011/057022 WO2012054688A2 (en) | 2010-10-22 | 2011-10-20 | Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG189201A1 true SG189201A1 (en) | 2013-05-31 |
Family
ID=45973240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013024179A SG189201A1 (en) | 2010-10-22 | 2011-10-20 | Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8709537B2 (enExample) |
| JP (1) | JP5972885B2 (enExample) |
| KR (1) | KR101594770B1 (enExample) |
| CN (1) | CN103168115B (enExample) |
| SG (1) | SG189201A1 (enExample) |
| TW (1) | TWI488992B (enExample) |
| WO (1) | WO2012054688A2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120312326A1 (en) * | 2011-06-10 | 2012-12-13 | Applied Materials, Inc. | Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber |
| US9673042B2 (en) | 2015-09-01 | 2017-06-06 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers |
| US10794853B2 (en) | 2016-12-09 | 2020-10-06 | Applied Materials, Inc. | Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4919974A (en) * | 1989-01-12 | 1990-04-24 | Ford Motor Company | Making diamond composite coated cutting tools |
| JPH11202099A (ja) | 1998-01-13 | 1999-07-30 | Nissin High Voltage Co Ltd | 電子線加速器のクリーニング方法 |
| JP2000269142A (ja) * | 1999-03-17 | 2000-09-29 | Sony Corp | 窒化ガリウムエピタキシャル層の形成方法及び発光素子 |
| US6627050B2 (en) * | 2000-07-28 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for depositing a tantalum-containing layer on a substrate |
| EP1258914B1 (en) * | 2000-09-14 | 2006-11-22 | Japan as represented by President of Japan Advanced Institute of Science and Technology | Heating element cvd device |
| KR20020083767A (ko) * | 2001-04-30 | 2002-11-04 | 주식회사 하이닉스반도체 | 선택적 에피택셜 성장 공정에서의 기판 세정 방법 |
| CN1168847C (zh) * | 2002-03-30 | 2004-09-29 | 燕山大学 | MgB2超导薄膜的原位热丝化学气相沉积制备方法 |
| US7220665B2 (en) | 2003-08-05 | 2007-05-22 | Micron Technology, Inc. | H2 plasma treatment |
| US7097713B2 (en) * | 2003-08-19 | 2006-08-29 | The Boc Group, Inc. | Method for removing a composite coating containing tantalum deposition and arc sprayed aluminum from ceramic substrates |
| US7241686B2 (en) * | 2004-07-20 | 2007-07-10 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA |
| KR100927983B1 (ko) | 2005-03-16 | 2009-11-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판처리방법 및 기판처리장치 |
| US7727590B2 (en) * | 2006-05-18 | 2010-06-01 | California Institute Of Technology | Robust filament assembly for a hot-wire chemical vapor deposition system |
| JP4308281B2 (ja) * | 2007-04-23 | 2009-08-05 | 三洋電機株式会社 | 光起電力素子の製造方法 |
| US8409351B2 (en) * | 2007-08-08 | 2013-04-02 | Sic Systems, Inc. | Production of bulk silicon carbide with hot-filament chemical vapor deposition |
| US8043976B2 (en) * | 2008-03-24 | 2011-10-25 | Air Products And Chemicals, Inc. | Adhesion to copper and copper electromigration resistance |
| CN101325153A (zh) * | 2008-07-16 | 2008-12-17 | 上海大学 | 一种半导体基片热沉复合材料的制备方法 |
-
2011
- 2011-10-06 US US13/267,309 patent/US8709537B2/en not_active Expired - Fee Related
- 2011-10-11 TW TW100136766A patent/TWI488992B/zh not_active IP Right Cessation
- 2011-10-20 KR KR1020137012987A patent/KR101594770B1/ko not_active Expired - Fee Related
- 2011-10-20 SG SG2013024179A patent/SG189201A1/en unknown
- 2011-10-20 JP JP2013535077A patent/JP5972885B2/ja not_active Expired - Fee Related
- 2011-10-20 CN CN201180050142.3A patent/CN103168115B/zh not_active Expired - Fee Related
- 2011-10-20 WO PCT/US2011/057022 patent/WO2012054688A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012054688A3 (en) | 2012-06-07 |
| KR101594770B1 (ko) | 2016-02-26 |
| US8709537B2 (en) | 2014-04-29 |
| KR20130141539A (ko) | 2013-12-26 |
| CN103168115A (zh) | 2013-06-19 |
| CN103168115B (zh) | 2016-01-06 |
| WO2012054688A2 (en) | 2012-04-26 |
| JP2013546178A (ja) | 2013-12-26 |
| TWI488992B (zh) | 2015-06-21 |
| US20120100312A1 (en) | 2012-04-26 |
| JP5972885B2 (ja) | 2016-08-17 |
| TW201229296A (en) | 2012-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101742061B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 컴퓨터 프로그램 | |
| KR101149383B1 (ko) | 반도체 장치의 제조 방법 및 기판 처리 장치 | |
| KR101848562B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
| KR101976559B1 (ko) | 핫 와이어 화학 기상 증착(ｈｗｃｖｄ) 챔버를 이용하여 기판의 표면을 세정하기 위한 방법들 | |
| TW202142723A (zh) | 使用預處理沉積氮化矽層之方法、使用該方法所形成之結構及用於進行該方法之系統 | |
| KR101202299B1 (ko) | 반도체 장치의 제조 방법 및 기판 처리 장치 | |
| US20120064733A1 (en) | Method of manufacturing semiconductor device and substrate processing apparatus | |
| WO2012029661A1 (ja) | 半導体装置の製造方法及び基板処理装置 | |
| KR20250078576A (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
| US11443919B2 (en) | Film formation via pulsed RF plasma | |
| US20250349541A1 (en) | Method of manufacturing semiconductor device, substrate processing apparatus, recording medium and method of processing substrate | |
| KR102829118B1 (ko) | 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
| US20050069641A1 (en) | Method for depositing metal layers using sequential flow deposition | |
| US8709537B2 (en) | Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes | |
| US8642376B2 (en) | Methods for depositing a material atop a substrate | |
| KR102863531B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 방법, 기록 매체 및 기판 처리 장치 | |
| US10529721B2 (en) | Method and apparatus for forming boron-doped silicon germanium film, and storage medium | |
| KR102094540B1 (ko) | 플라즈마를 이용한 박막 제조방법 및 장치 | |
| JP2002343792A (ja) | 膜形成方法及び装置 | |
| WO2025074669A1 (ja) | 基板処理方法、半導体装置の製造方法、プログラムおよび基板処理装置 | |
| WO2025203763A1 (ja) | 基板処理方法、半導体装置の製造方法、プログラムおよび基板処理装置 | |
| WO2021187104A1 (ja) | 基板処理方法及び基板処理装置 | |
| JP2011119592A (ja) | 半導体装置の製造方法および基板処理装置 |