TWI488545B - Plasma processing device and plasma processing method and memory medium - Google Patents

Plasma processing device and plasma processing method and memory medium Download PDF

Info

Publication number
TWI488545B
TWI488545B TW097134558A TW97134558A TWI488545B TW I488545 B TWI488545 B TW I488545B TW 097134558 A TW097134558 A TW 097134558A TW 97134558 A TW97134558 A TW 97134558A TW I488545 B TWI488545 B TW I488545B
Authority
TW
Taiwan
Prior art keywords
frequency power
power source
output
oscillator
plasma
Prior art date
Application number
TW097134558A
Other languages
English (en)
Chinese (zh)
Other versions
TW200932067A (en
Inventor
田中誠治
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200932067A publication Critical patent/TW200932067A/zh
Application granted granted Critical
Publication of TWI488545B publication Critical patent/TWI488545B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW097134558A 2007-09-10 2008-09-09 Plasma processing device and plasma processing method and memory medium TWI488545B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007234365A JP4905304B2 (ja) 2007-09-10 2007-09-10 プラズマ処理装置、プラズマ処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
TW200932067A TW200932067A (en) 2009-07-16
TWI488545B true TWI488545B (zh) 2015-06-11

Family

ID=40478273

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097134558A TWI488545B (zh) 2007-09-10 2008-09-09 Plasma processing device and plasma processing method and memory medium

Country Status (4)

Country Link
JP (1) JP4905304B2 (https=)
KR (2) KR101035248B1 (https=)
CN (1) CN101389179B (https=)
TW (1) TWI488545B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5141519B2 (ja) * 2008-12-02 2013-02-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP4891384B2 (ja) * 2009-12-10 2012-03-07 株式会社新川 プラズマ発生装置
JP5691081B2 (ja) * 2010-04-02 2015-04-01 株式会社アルバック 成膜装置
JP6029302B2 (ja) * 2012-03-29 2016-11-24 株式会社ダイヘン マイクロ波電力供給装置
KR20140066483A (ko) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
JP6144917B2 (ja) * 2013-01-17 2017-06-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP5704772B1 (ja) * 2014-02-04 2015-04-22 株式会社京三製作所 高周波電源装置およびプラズマ着火方法
JP2016225439A (ja) * 2015-05-29 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置及び基板剥離検知方法
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
JP6667343B2 (ja) * 2016-03-30 2020-03-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP7515423B2 (ja) * 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
JP7511501B2 (ja) * 2021-02-10 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置及び監視装置
JP7671680B2 (ja) * 2021-10-29 2025-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102450733B1 (ko) * 2022-05-04 2022-10-06 (주)알에프티에스아이 탄화 방지 시스템이 구비된 RF Generator

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW439087B (en) * 1998-11-12 2001-06-07 Lam Res Corp Integrated power modules for plasma processing systems
JP2001274099A (ja) * 2000-03-24 2001-10-05 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法
JP2003264180A (ja) * 2002-03-12 2003-09-19 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理停止方法
TW573392B (en) * 2001-10-22 2004-01-21 Shibaura Mechatronics Corp Arc detecting method of glow discharge apparatus and high-frequency arc discharge suppressive apparatus
US20040058552A1 (en) * 2002-09-20 2004-03-25 Fujitsu Limited Method for etching organic insulating film and method for fabricating semiconductor device
TW200507104A (en) * 2003-08-01 2005-02-16 Tokyo Electron Ltd Plasma etching method and plasma treatment apparatus
US20050205208A1 (en) * 2004-02-20 2005-09-22 Tokyo Electron Limited Plasma processing apparatus and control method thereof
CN1694229A (zh) * 2004-04-30 2005-11-09 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN1992164A (zh) * 2005-12-28 2007-07-04 东京毅力科创株式会社 等离子体蚀刻方法和计算机可读取的存储介质

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3829233B2 (ja) 1999-05-24 2006-10-04 富士電機ホールディングス株式会社 高周波電源の制御方法
JP2003064477A (ja) * 2001-08-20 2003-03-05 Sony Corp 電源制御装置および電源制御方法
JP2004220923A (ja) 2003-01-15 2004-08-05 Ulvac Japan Ltd 異常放電検出装置と検出方法、及び該異常放電検出装置を備えたプラズマ処理装置
US7292045B2 (en) * 2004-09-04 2007-11-06 Applied Materials, Inc. Detection and suppression of electrical arcing
JP4597886B2 (ja) * 2005-02-24 2010-12-15 イーエヌ テクノロジー インコーポレイテッド プラズマ電源装置用アークエネルギー制御回路

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW439087B (en) * 1998-11-12 2001-06-07 Lam Res Corp Integrated power modules for plasma processing systems
JP2001274099A (ja) * 2000-03-24 2001-10-05 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法
TW573392B (en) * 2001-10-22 2004-01-21 Shibaura Mechatronics Corp Arc detecting method of glow discharge apparatus and high-frequency arc discharge suppressive apparatus
JP2003264180A (ja) * 2002-03-12 2003-09-19 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理停止方法
US20040058552A1 (en) * 2002-09-20 2004-03-25 Fujitsu Limited Method for etching organic insulating film and method for fabricating semiconductor device
TW200507104A (en) * 2003-08-01 2005-02-16 Tokyo Electron Ltd Plasma etching method and plasma treatment apparatus
US20050205208A1 (en) * 2004-02-20 2005-09-22 Tokyo Electron Limited Plasma processing apparatus and control method thereof
CN1694229A (zh) * 2004-04-30 2005-11-09 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN1992164A (zh) * 2005-12-28 2007-07-04 东京毅力科创株式会社 等离子体蚀刻方法和计算机可读取的存储介质

Also Published As

Publication number Publication date
JP4905304B2 (ja) 2012-03-28
KR20090026735A (ko) 2009-03-13
CN101389179B (zh) 2011-11-30
CN101389179A (zh) 2009-03-18
KR101035248B1 (ko) 2011-05-18
JP2009070844A (ja) 2009-04-02
KR20100119851A (ko) 2010-11-11
TW200932067A (en) 2009-07-16

Similar Documents

Publication Publication Date Title
TWI488545B (zh) Plasma processing device and plasma processing method and memory medium
TWI396473B (zh) And a method of operating the plasma processing apparatus and the plasma processing apparatus
KR100807724B1 (ko) 기판처리장치 및 기판처리방법
KR101997330B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법
JP4884047B2 (ja) プラズマ処理方法
TWI398626B (zh) 藉測量自偏壓電壓監控電漿處理系統中程序之方法及裝置
TWI605513B (zh) Vacuum device, pressure control method, and etching method
JP2013125729A (ja) プラズマ処理装置
CN101088149A (zh) 测量等离子体频率监控等离子体处理系统中处理的方法和装置
JP4699127B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP4515950B2 (ja) プラズマ処理装置、プラズマ処理方法およびコンピュータ記憶媒体
JP2004220923A (ja) 異常放電検出装置と検出方法、及び該異常放電検出装置を備えたプラズマ処理装置
JP2020177959A (ja) クリーニング処理方法及びプラズマ処理装置
TWI416998B (zh) Plasma processing device
TW201511074A (zh) 電漿處理裝置
JP7674067B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR20010011384A (ko) 플라즈마 공정챔버의 정전기제거장치
JP2000077390A (ja) プラズマ処理装置
JP2009088126A (ja) 半導体装置の製造方法