CN101389179B - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法 Download PDF

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Publication number
CN101389179B
CN101389179B CN2008101495379A CN200810149537A CN101389179B CN 101389179 B CN101389179 B CN 101389179B CN 2008101495379 A CN2008101495379 A CN 2008101495379A CN 200810149537 A CN200810149537 A CN 200810149537A CN 101389179 B CN101389179 B CN 101389179B
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frequency power
power supply
output
oscillator
plasma
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CN101389179A (zh
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田中诚治
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN2008101495379A 2007-09-10 2008-09-10 等离子体处理装置和等离子体处理方法 Active CN101389179B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-234365 2007-09-10
JP2007234365A JP4905304B2 (ja) 2007-09-10 2007-09-10 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP2007234365 2007-09-10

Publications (2)

Publication Number Publication Date
CN101389179A CN101389179A (zh) 2009-03-18
CN101389179B true CN101389179B (zh) 2011-11-30

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CN2008101495379A Active CN101389179B (zh) 2007-09-10 2008-09-10 等离子体处理装置和等离子体处理方法

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JP (1) JP4905304B2 (https=)
KR (2) KR101035248B1 (https=)
CN (1) CN101389179B (https=)
TW (1) TWI488545B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5141519B2 (ja) * 2008-12-02 2013-02-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP4891384B2 (ja) * 2009-12-10 2012-03-07 株式会社新川 プラズマ発生装置
JP5691081B2 (ja) * 2010-04-02 2015-04-01 株式会社アルバック 成膜装置
JP6029302B2 (ja) * 2012-03-29 2016-11-24 株式会社ダイヘン マイクロ波電力供給装置
KR20140066483A (ko) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
JP6144917B2 (ja) * 2013-01-17 2017-06-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP5704772B1 (ja) * 2014-02-04 2015-04-22 株式会社京三製作所 高周波電源装置およびプラズマ着火方法
JP2016225439A (ja) * 2015-05-29 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置及び基板剥離検知方法
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
JP6667343B2 (ja) * 2016-03-30 2020-03-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP7515423B2 (ja) * 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
JP7511501B2 (ja) * 2021-02-10 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置及び監視装置
JP7671680B2 (ja) * 2021-10-29 2025-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102450733B1 (ko) * 2022-05-04 2022-10-06 (주)알에프티에스아이 탄화 방지 시스템이 구비된 RF Generator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1565148A (zh) * 2001-10-22 2005-01-12 芝浦机械电子株式会社 判定辉光放电装置中电弧的方法及高频电弧放电抑制装置
CN1581445A (zh) * 2003-08-01 2005-02-16 东京毅力科创株式会社 等离子体蚀刻方法和等离子体处理装置
CN1694229A (zh) * 2004-04-30 2005-11-09 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法

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US6222718B1 (en) * 1998-11-12 2001-04-24 Lam Research Corporation Integrated power modules for plasma processing systems
JP3829233B2 (ja) 1999-05-24 2006-10-04 富士電機ホールディングス株式会社 高周波電源の制御方法
JP3377773B2 (ja) * 2000-03-24 2003-02-17 三菱重工業株式会社 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法
JP2003064477A (ja) * 2001-08-20 2003-03-05 Sony Corp 電源制御装置および電源制御方法
JP4493896B2 (ja) 2002-03-12 2010-06-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理停止方法
JP4024636B2 (ja) * 2002-09-20 2007-12-19 富士通株式会社 有機系絶縁膜のエッチング方法及び半導体装置の製造方法
JP2004220923A (ja) 2003-01-15 2004-08-05 Ulvac Japan Ltd 異常放電検出装置と検出方法、及び該異常放電検出装置を備えたプラズマ処理装置
JP4359521B2 (ja) * 2004-02-20 2009-11-04 東京エレクトロン株式会社 プラズマ処理装置及びその制御方法
US7292045B2 (en) * 2004-09-04 2007-11-06 Applied Materials, Inc. Detection and suppression of electrical arcing
JP4597886B2 (ja) * 2005-02-24 2010-12-15 イーエヌ テクノロジー インコーポレイテッド プラズマ電源装置用アークエネルギー制御回路
JP4827081B2 (ja) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1565148A (zh) * 2001-10-22 2005-01-12 芝浦机械电子株式会社 判定辉光放电装置中电弧的方法及高频电弧放电抑制装置
CN1581445A (zh) * 2003-08-01 2005-02-16 东京毅力科创株式会社 等离子体蚀刻方法和等离子体处理装置
CN1694229A (zh) * 2004-04-30 2005-11-09 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2003-264180A 2003.09.19
JP特开2003-64477A 2003.03.05

Also Published As

Publication number Publication date
JP4905304B2 (ja) 2012-03-28
KR20090026735A (ko) 2009-03-13
TWI488545B (zh) 2015-06-11
CN101389179A (zh) 2009-03-18
KR101035248B1 (ko) 2011-05-18
JP2009070844A (ja) 2009-04-02
KR20100119851A (ko) 2010-11-11
TW200932067A (en) 2009-07-16

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