TWI484588B - 靜電鉗與離子佈植系統 - Google Patents

靜電鉗與離子佈植系統 Download PDF

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Publication number
TWI484588B
TWI484588B TW100149600A TW100149600A TWI484588B TW I484588 B TWI484588 B TW I484588B TW 100149600 A TW100149600 A TW 100149600A TW 100149600 A TW100149600 A TW 100149600A TW I484588 B TWI484588 B TW I484588B
Authority
TW
Taiwan
Prior art keywords
gap
heating assembly
substrate
electrostatic clamp
base
Prior art date
Application number
TW100149600A
Other languages
English (en)
Chinese (zh)
Other versions
TW201237995A (en
Inventor
提摩太Ｊ 米勒
理查Ｓ 默卡
朱利安Ｇ 布雷克
Original Assignee
瓦里安半導體設備公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瓦里安半導體設備公司 filed Critical 瓦里安半導體設備公司
Publication of TW201237995A publication Critical patent/TW201237995A/zh
Application granted granted Critical
Publication of TWI484588B publication Critical patent/TWI484588B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW100149600A 2011-01-03 2011-12-29 靜電鉗與離子佈植系統 TWI484588B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/983,710 US8669540B2 (en) 2011-01-03 2011-01-03 System and method for gas leak control in a substrate holder

Publications (2)

Publication Number Publication Date
TW201237995A TW201237995A (en) 2012-09-16
TWI484588B true TWI484588B (zh) 2015-05-11

Family

ID=45569727

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100149600A TWI484588B (zh) 2011-01-03 2011-12-29 靜電鉗與離子佈植系統

Country Status (6)

Country Link
US (1) US8669540B2 (enExample)
JP (1) JP6052184B2 (enExample)
KR (1) KR101937911B1 (enExample)
CN (2) CN103299415B (enExample)
TW (1) TWI484588B (enExample)
WO (1) WO2012094139A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US20140318455A1 (en) * 2013-04-26 2014-10-30 Varian Semiconductor Equipment Associates, Inc. Low emissivity electrostatic chuck
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
CN111816604B (zh) * 2020-08-18 2021-03-12 北京智创芯源科技有限公司 一种晶片刻蚀方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030168439A1 (en) * 2002-03-05 2003-09-11 Seiichiro Kanno Wafer stage for wafer processing apparatus and wafer processing method
US20040173581A1 (en) * 2003-03-05 2004-09-09 Ryujiro Udo Plasma processing method and plasma processing apparatus
US20060207725A1 (en) * 2005-03-18 2006-09-21 Tokyo Electronic Limited Substrate mounting table, substrate processing apparatus and substrate processing method
US20070007276A1 (en) * 2001-04-30 2007-01-11 Steger Robert J Electrostatic chuck having radial temperature control capability
TW201042711A (en) * 2009-05-19 2010-12-01 Advanced Ion Beam Tech Inc Method and apparatus for low temperature ion implantation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
JP4256503B2 (ja) * 1997-10-30 2009-04-22 東京エレクトロン株式会社 真空処理装置
US6019164A (en) * 1997-12-31 2000-02-01 Temptronic Corporation Workpiece chuck
JP2001068538A (ja) 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP4698097B2 (ja) 2001-09-26 2011-06-08 京セラ株式会社 ウェハ支持部材
JP2003124298A (ja) 2001-10-17 2003-04-25 Anelva Corp プラズマ支援ウェハー処理反応容器の二重静電チャックウェハーステージ
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
JP5007179B2 (ja) * 2007-08-29 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9082804B2 (en) * 2011-02-07 2015-07-14 Varian Semiconductor Equipment Associates, Inc. Triboelectric charge controlled electrostatic clamp

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070007276A1 (en) * 2001-04-30 2007-01-11 Steger Robert J Electrostatic chuck having radial temperature control capability
US20030168439A1 (en) * 2002-03-05 2003-09-11 Seiichiro Kanno Wafer stage for wafer processing apparatus and wafer processing method
US20040173581A1 (en) * 2003-03-05 2004-09-09 Ryujiro Udo Plasma processing method and plasma processing apparatus
US20060207725A1 (en) * 2005-03-18 2006-09-21 Tokyo Electronic Limited Substrate mounting table, substrate processing apparatus and substrate processing method
TW201042711A (en) * 2009-05-19 2010-12-01 Advanced Ion Beam Tech Inc Method and apparatus for low temperature ion implantation

Also Published As

Publication number Publication date
KR101937911B1 (ko) 2019-04-11
US20120168640A1 (en) 2012-07-05
JP6052184B2 (ja) 2016-12-27
CN105552004B (zh) 2018-08-07
CN105552004A (zh) 2016-05-04
US8669540B2 (en) 2014-03-11
JP2014509446A (ja) 2014-04-17
WO2012094139A1 (en) 2012-07-12
TW201237995A (en) 2012-09-16
CN103299415B (zh) 2016-04-13
CN103299415A (zh) 2013-09-11
KR20140009304A (ko) 2014-01-22

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