CN105552004B - 静电钳 - Google Patents

静电钳 Download PDF

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Publication number
CN105552004B
CN105552004B CN201511000843.2A CN201511000843A CN105552004B CN 105552004 B CN105552004 B CN 105552004B CN 201511000843 A CN201511000843 A CN 201511000843A CN 105552004 B CN105552004 B CN 105552004B
Authority
CN
China
Prior art keywords
gap
base
gas
substrate
electrostatic clamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201511000843.2A
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English (en)
Chinese (zh)
Other versions
CN105552004A (zh
Inventor
提摩太·J·米勒
理查·S·默卡
朱利安·G·布雷克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN105552004A publication Critical patent/CN105552004A/zh
Application granted granted Critical
Publication of CN105552004B publication Critical patent/CN105552004B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10P72/72—
    • H10P72/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H10P72/04—
    • H10P72/0434—
    • H10P72/70—
    • H10P72/76—
    • H10P72/7604—
    • H10P72/7624—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201511000843.2A 2011-01-03 2011-12-19 静电钳 Active CN105552004B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/983,710 2011-01-03
US12/983,710 US8669540B2 (en) 2011-01-03 2011-01-03 System and method for gas leak control in a substrate holder
CN201180062710.1A CN103299415B (zh) 2011-01-03 2011-12-19 静电钳与离子布植系统

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201180062710.1A Division CN103299415B (zh) 2011-01-03 2011-12-19 静电钳与离子布植系统

Publications (2)

Publication Number Publication Date
CN105552004A CN105552004A (zh) 2016-05-04
CN105552004B true CN105552004B (zh) 2018-08-07

Family

ID=45569727

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201511000843.2A Active CN105552004B (zh) 2011-01-03 2011-12-19 静电钳
CN201180062710.1A Active CN103299415B (zh) 2011-01-03 2011-12-19 静电钳与离子布植系统

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201180062710.1A Active CN103299415B (zh) 2011-01-03 2011-12-19 静电钳与离子布植系统

Country Status (6)

Country Link
US (1) US8669540B2 (enExample)
JP (1) JP6052184B2 (enExample)
KR (1) KR101937911B1 (enExample)
CN (2) CN105552004B (enExample)
TW (1) TWI484588B (enExample)
WO (1) WO2012094139A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US20140318455A1 (en) * 2013-04-26 2014-10-30 Varian Semiconductor Equipment Associates, Inc. Low emissivity electrostatic chuck
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
CN111816604B (zh) * 2020-08-18 2021-03-12 北京智创芯源科技有限公司 一种晶片刻蚀方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
JP4256503B2 (ja) * 1997-10-30 2009-04-22 東京エレクトロン株式会社 真空処理装置
US6019164A (en) * 1997-12-31 2000-02-01 Temptronic Corporation Workpiece chuck
JP2001068538A (ja) 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP4698097B2 (ja) 2001-09-26 2011-06-08 京セラ株式会社 ウェハ支持部材
JP2003124298A (ja) 2001-10-17 2003-04-25 Anelva Corp プラズマ支援ウェハー処理反応容器の二重静電チャックウェハーステージ
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
US6897403B2 (en) * 2003-03-05 2005-05-24 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
US7815740B2 (en) * 2005-03-18 2010-10-19 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate processing method
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
JP5007179B2 (ja) * 2007-08-29 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7709364B1 (en) * 2009-05-19 2010-05-04 Advanced Ion Beam Technology, Inc. Method and apparatus for low temperature ion implantation
US9082804B2 (en) * 2011-02-07 2015-07-14 Varian Semiconductor Equipment Associates, Inc. Triboelectric charge controlled electrostatic clamp

Also Published As

Publication number Publication date
US20120168640A1 (en) 2012-07-05
WO2012094139A1 (en) 2012-07-12
KR20140009304A (ko) 2014-01-22
JP2014509446A (ja) 2014-04-17
TW201237995A (en) 2012-09-16
US8669540B2 (en) 2014-03-11
TWI484588B (zh) 2015-05-11
CN105552004A (zh) 2016-05-04
JP6052184B2 (ja) 2016-12-27
KR101937911B1 (ko) 2019-04-11
CN103299415B (zh) 2016-04-13
CN103299415A (zh) 2013-09-11

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