KR101937911B1 - 정전기 클램프 및 이온 주입 시스템 - Google Patents

정전기 클램프 및 이온 주입 시스템 Download PDF

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Publication number
KR101937911B1
KR101937911B1 KR1020137020404A KR20137020404A KR101937911B1 KR 101937911 B1 KR101937911 B1 KR 101937911B1 KR 1020137020404 A KR1020137020404 A KR 1020137020404A KR 20137020404 A KR20137020404 A KR 20137020404A KR 101937911 B1 KR101937911 B1 KR 101937911B1
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South Korea
Prior art keywords
heating block
base
gap
gas
electrostatic clamp
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KR1020137020404A
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English (en)
Korean (ko)
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KR20140009304A (ko
Inventor
티모시 제이. 밀러
리차드 에스. 무카
줄리앙 지. 브레이크
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Publication of KR20140009304A publication Critical patent/KR20140009304A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020137020404A 2011-01-03 2011-12-19 정전기 클램프 및 이온 주입 시스템 Active KR101937911B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/983,710 2011-01-03
US12/983,710 US8669540B2 (en) 2011-01-03 2011-01-03 System and method for gas leak control in a substrate holder
PCT/US2011/065796 WO2012094139A1 (en) 2011-01-03 2011-12-19 System and method for gas leak control in a substrate holder

Publications (2)

Publication Number Publication Date
KR20140009304A KR20140009304A (ko) 2014-01-22
KR101937911B1 true KR101937911B1 (ko) 2019-04-11

Family

ID=45569727

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137020404A Active KR101937911B1 (ko) 2011-01-03 2011-12-19 정전기 클램프 및 이온 주입 시스템

Country Status (6)

Country Link
US (1) US8669540B2 (enExample)
JP (1) JP6052184B2 (enExample)
KR (1) KR101937911B1 (enExample)
CN (2) CN103299415B (enExample)
TW (1) TWI484588B (enExample)
WO (1) WO2012094139A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US20140318455A1 (en) * 2013-04-26 2014-10-30 Varian Semiconductor Equipment Associates, Inc. Low emissivity electrostatic chuck
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
CN111816604B (zh) * 2020-08-18 2021-03-12 北京智创芯源科技有限公司 一种晶片刻蚀方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP2003508893A (ja) * 1998-07-14 2003-03-04 テンプトロニック コーポレイション ワークピースチャック
JP2003100856A (ja) 2001-09-26 2003-04-04 Kyocera Corp ウェハ支持部材
JP2003124298A (ja) 2001-10-17 2003-04-25 Anelva Corp プラズマ支援ウェハー処理反応容器の二重静電チャックウェハーステージ
JP2003249541A (ja) * 2002-02-26 2003-09-05 Hitachi High-Technologies Corp ウエハステージ
KR100452649B1 (ko) 1999-06-21 2004-10-12 동경 엘렉트론 주식회사 플라즈마 처리 장치용 전극 구조체, 처리 장치용 탑재대구조체, 플라즈마 처리 장치 및 처리 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
JP4256503B2 (ja) * 1997-10-30 2009-04-22 東京エレクトロン株式会社 真空処理装置
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
US6897403B2 (en) * 2003-03-05 2005-05-24 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
US7815740B2 (en) * 2005-03-18 2010-10-19 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate processing method
JP5007179B2 (ja) * 2007-08-29 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7709364B1 (en) * 2009-05-19 2010-05-04 Advanced Ion Beam Technology, Inc. Method and apparatus for low temperature ion implantation
US9082804B2 (en) * 2011-02-07 2015-07-14 Varian Semiconductor Equipment Associates, Inc. Triboelectric charge controlled electrostatic clamp

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003508893A (ja) * 1998-07-14 2003-03-04 テンプトロニック コーポレイション ワークピースチャック
KR100452649B1 (ko) 1999-06-21 2004-10-12 동경 엘렉트론 주식회사 플라즈마 처리 장치용 전극 구조체, 처리 장치용 탑재대구조체, 플라즈마 처리 장치 및 처리 장치
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP2003100856A (ja) 2001-09-26 2003-04-04 Kyocera Corp ウェハ支持部材
JP2003124298A (ja) 2001-10-17 2003-04-25 Anelva Corp プラズマ支援ウェハー処理反応容器の二重静電チャックウェハーステージ
JP2003249541A (ja) * 2002-02-26 2003-09-05 Hitachi High-Technologies Corp ウエハステージ

Also Published As

Publication number Publication date
US20120168640A1 (en) 2012-07-05
JP6052184B2 (ja) 2016-12-27
CN105552004B (zh) 2018-08-07
CN105552004A (zh) 2016-05-04
US8669540B2 (en) 2014-03-11
JP2014509446A (ja) 2014-04-17
WO2012094139A1 (en) 2012-07-12
TW201237995A (en) 2012-09-16
CN103299415B (zh) 2016-04-13
TWI484588B (zh) 2015-05-11
CN103299415A (zh) 2013-09-11
KR20140009304A (ko) 2014-01-22

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