CN103299415B - 静电钳与离子布植系统 - Google Patents

静电钳与离子布植系统 Download PDF

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Publication number
CN103299415B
CN103299415B CN201180062710.1A CN201180062710A CN103299415B CN 103299415 B CN103299415 B CN 103299415B CN 201180062710 A CN201180062710 A CN 201180062710A CN 103299415 B CN103299415 B CN 103299415B
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CN
China
Prior art keywords
gap
gas
heating element
electrostatic clamp
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180062710.1A
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English (en)
Chinese (zh)
Other versions
CN103299415A (zh
Inventor
提摩太·J·米勒
理查·S·默卡
朱利安·G·布雷克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Priority to CN201511000843.2A priority Critical patent/CN105552004B/zh
Publication of CN103299415A publication Critical patent/CN103299415A/zh
Application granted granted Critical
Publication of CN103299415B publication Critical patent/CN103299415B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201180062710.1A 2011-01-03 2011-12-19 静电钳与离子布植系统 Active CN103299415B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201511000843.2A CN105552004B (zh) 2011-01-03 2011-12-19 静电钳

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/983,710 2011-01-03
US12/983,710 US8669540B2 (en) 2011-01-03 2011-01-03 System and method for gas leak control in a substrate holder
PCT/US2011/065796 WO2012094139A1 (en) 2011-01-03 2011-12-19 System and method for gas leak control in a substrate holder

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201511000843.2A Division CN105552004B (zh) 2011-01-03 2011-12-19 静电钳

Publications (2)

Publication Number Publication Date
CN103299415A CN103299415A (zh) 2013-09-11
CN103299415B true CN103299415B (zh) 2016-04-13

Family

ID=45569727

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201180062710.1A Active CN103299415B (zh) 2011-01-03 2011-12-19 静电钳与离子布植系统
CN201511000843.2A Active CN105552004B (zh) 2011-01-03 2011-12-19 静电钳

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201511000843.2A Active CN105552004B (zh) 2011-01-03 2011-12-19 静电钳

Country Status (6)

Country Link
US (1) US8669540B2 (enExample)
JP (1) JP6052184B2 (enExample)
KR (1) KR101937911B1 (enExample)
CN (2) CN103299415B (enExample)
TW (1) TWI484588B (enExample)
WO (1) WO2012094139A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US20140318455A1 (en) * 2013-04-26 2014-10-30 Varian Semiconductor Equipment Associates, Inc. Low emissivity electrostatic chuck
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
CN111816604B (zh) * 2020-08-18 2021-03-12 北京智创芯源科技有限公司 一种晶片刻蚀方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030168439A1 (en) * 2002-03-05 2003-09-11 Seiichiro Kanno Wafer stage for wafer processing apparatus and wafer processing method
US20040173581A1 (en) * 2003-03-05 2004-09-09 Ryujiro Udo Plasma processing method and plasma processing apparatus
CN1835205A (zh) * 2005-03-18 2006-09-20 东京毅力科创株式会社 基板载放台、基板处理装置以及基板处理方法
CN101283624A (zh) * 2005-10-06 2008-10-08 朗姆研究公司 具有径向温度控制能力的静电卡盘

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
JP4256503B2 (ja) * 1997-10-30 2009-04-22 東京エレクトロン株式会社 真空処理装置
US6019164A (en) * 1997-12-31 2000-02-01 Temptronic Corporation Workpiece chuck
JP2001068538A (ja) 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP4698097B2 (ja) 2001-09-26 2011-06-08 京セラ株式会社 ウェハ支持部材
JP2003124298A (ja) 2001-10-17 2003-04-25 Anelva Corp プラズマ支援ウェハー処理反応容器の二重静電チャックウェハーステージ
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
US7815740B2 (en) * 2005-03-18 2010-10-19 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate processing method
JP5007179B2 (ja) * 2007-08-29 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7709364B1 (en) * 2009-05-19 2010-05-04 Advanced Ion Beam Technology, Inc. Method and apparatus for low temperature ion implantation
US9082804B2 (en) * 2011-02-07 2015-07-14 Varian Semiconductor Equipment Associates, Inc. Triboelectric charge controlled electrostatic clamp

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030168439A1 (en) * 2002-03-05 2003-09-11 Seiichiro Kanno Wafer stage for wafer processing apparatus and wafer processing method
US20040173581A1 (en) * 2003-03-05 2004-09-09 Ryujiro Udo Plasma processing method and plasma processing apparatus
CN1835205A (zh) * 2005-03-18 2006-09-20 东京毅力科创株式会社 基板载放台、基板处理装置以及基板处理方法
CN101283624A (zh) * 2005-10-06 2008-10-08 朗姆研究公司 具有径向温度控制能力的静电卡盘

Also Published As

Publication number Publication date
KR101937911B1 (ko) 2019-04-11
US20120168640A1 (en) 2012-07-05
JP6052184B2 (ja) 2016-12-27
CN105552004B (zh) 2018-08-07
CN105552004A (zh) 2016-05-04
US8669540B2 (en) 2014-03-11
JP2014509446A (ja) 2014-04-17
WO2012094139A1 (en) 2012-07-12
TW201237995A (en) 2012-09-16
TWI484588B (zh) 2015-05-11
CN103299415A (zh) 2013-09-11
KR20140009304A (ko) 2014-01-22

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