TWI475316B - A method of manufacturing a mask and a mask, and a method of transferring the pattern - Google Patents
A method of manufacturing a mask and a mask, and a method of transferring the pattern Download PDFInfo
- Publication number
- TWI475316B TWI475316B TW102117083A TW102117083A TWI475316B TW I475316 B TWI475316 B TW I475316B TW 102117083 A TW102117083 A TW 102117083A TW 102117083 A TW102117083 A TW 102117083A TW I475316 B TWI475316 B TW I475316B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- film
- phase shift
- pattern
- representative wavelength
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims description 160
- 230000010363 phase shift Effects 0.000 claims description 108
- 238000012546 transfer Methods 0.000 claims description 69
- 230000005540 biological transmission Effects 0.000 claims description 52
- 238000002834 transmittance Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 37
- 239000012788 optical film Substances 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 51
- 238000009826 distribution Methods 0.000 description 29
- 230000000694 effects Effects 0.000 description 17
- 238000005530 etching Methods 0.000 description 14
- 238000000059 patterning Methods 0.000 description 10
- 230000006872 improvement Effects 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 238000013041 optical simulation Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- -1 telluride compound Chemical class 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- 229910006249 ZrSi Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012126114A JP6093117B2 (ja) | 2012-06-01 | 2012-06-01 | フォトマスク、フォトマスクの製造方法及びパターンの転写方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201400977A TW201400977A (zh) | 2014-01-01 |
| TWI475316B true TWI475316B (zh) | 2015-03-01 |
Family
ID=49737384
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104101989A TWI516857B (zh) | 2012-06-01 | 2013-05-14 | A flat panel display manufacturing mask, a pattern transfer method, and a method of manufacturing a flat panel display |
| TW102117083A TWI475316B (zh) | 2012-06-01 | 2013-05-14 | A method of manufacturing a mask and a mask, and a method of transferring the pattern |
| TW104136941A TWI605300B (zh) | 2012-06-01 | 2013-05-14 | Photomask, pattern transfer method, flat panel display manufacturing method, and blank mask |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104101989A TWI516857B (zh) | 2012-06-01 | 2013-05-14 | A flat panel display manufacturing mask, a pattern transfer method, and a method of manufacturing a flat panel display |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104136941A TWI605300B (zh) | 2012-06-01 | 2013-05-14 | Photomask, pattern transfer method, flat panel display manufacturing method, and blank mask |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6093117B2 (pt) |
| KR (2) | KR101528973B1 (pt) |
| CN (2) | CN103454851B (pt) |
| TW (3) | TWI516857B (pt) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103969940A (zh) | 2014-04-22 | 2014-08-06 | 京东方科技集团股份有限公司 | 相移掩模板和源漏掩模板 |
| JP6581759B2 (ja) * | 2014-07-17 | 2019-09-25 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法 |
| JP6335735B2 (ja) * | 2014-09-29 | 2018-05-30 | Hoya株式会社 | フォトマスク及び表示装置の製造方法 |
| JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
| JP6726553B2 (ja) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | フォトマスクの製造方法、及び表示装置の製造方法 |
| JP6259509B1 (ja) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 |
| JP6774505B2 (ja) * | 2016-12-28 | 2020-10-28 | 富士フイルム株式会社 | パターンの製造方法、カラーフィルタの製造方法、固体撮像素子の製造方法および画像表示装置の製造方法 |
| CN108319103B (zh) * | 2017-01-16 | 2023-11-28 | Hoya株式会社 | 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法 |
| JP7080070B2 (ja) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
| JP2019012280A (ja) * | 2018-09-19 | 2019-01-24 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法 |
| TWI712851B (zh) * | 2018-10-22 | 2020-12-11 | 日商Ｈｏｙａ股份有限公司 | 光罩、光罩之製造方法及電子元件之製造方法 |
| JP7261709B2 (ja) * | 2019-09-13 | 2023-04-20 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法及び表示装置の製造方法 |
| JP7383490B2 (ja) * | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | フォトマスク |
| JP6872061B2 (ja) * | 2020-05-11 | 2021-05-19 | Hoya株式会社 | フォトマスク及び表示装置の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW466584B (en) * | 1999-11-08 | 2001-12-01 | Matsushita Electronics Corp | Photomask, method of producing photomask, and method of making pattern using photomask |
| US20040086788A1 (en) * | 2002-04-26 | 2004-05-06 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| TW200827924A (en) * | 2006-12-25 | 2008-07-01 | Nanya Technology Corp | Alternating phase shift mask and method of the same |
| JP2009042753A (ja) * | 2007-07-19 | 2009-02-26 | Hoya Corp | フォトマスク及びその製造方法、並びにパターン転写方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0311345A (ja) * | 1989-06-08 | 1991-01-18 | Oki Electric Ind Co Ltd | ホトマスク及びこれを用いたパターン形成方法 |
| JPH03177841A (ja) * | 1989-12-06 | 1991-08-01 | Oki Electric Ind Co Ltd | ネガ型レジスト用ホトマスク |
| JPH05158214A (ja) * | 1991-03-13 | 1993-06-25 | Ryoden Semiconductor Syst Eng Kk | 位相シフトマスクおよびその製造方法 |
| JP2933759B2 (ja) * | 1991-09-12 | 1999-08-16 | 川崎製鉄株式会社 | 位相シフトマスクの製造方法 |
| JPH06123961A (ja) * | 1992-10-12 | 1994-05-06 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法 |
| JPH0798493A (ja) * | 1993-09-28 | 1995-04-11 | Toppan Printing Co Ltd | 位相シフトマスク及びその製造方法 |
| KR19980016800A (ko) * | 1996-08-29 | 1998-06-05 | 김광호 | 위상반전 마스크 및 그 제조방법 |
| JP3984626B2 (ja) * | 2001-12-26 | 2007-10-03 | 松下電器産業株式会社 | パターン形成方法 |
| JP4314288B2 (ja) * | 2001-12-26 | 2009-08-12 | パナソニック株式会社 | フォトマスク |
| JP3759138B2 (ja) * | 2003-02-17 | 2006-03-22 | 松下電器産業株式会社 | フォトマスク |
| JP4314285B2 (ja) * | 2003-02-17 | 2009-08-12 | パナソニック株式会社 | フォトマスク |
| US7147975B2 (en) * | 2003-02-17 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Photomask |
| JP2004279484A (ja) * | 2003-03-12 | 2004-10-07 | Dainippon Printing Co Ltd | 位相シフトマスク |
| JP4009219B2 (ja) * | 2003-04-10 | 2007-11-14 | 松下電器産業株式会社 | フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法 |
| JP4574343B2 (ja) * | 2004-12-15 | 2010-11-04 | 三星電子株式会社 | 位相シフトマスク及びパターン形成方法 |
| CN100570480C (zh) * | 2005-08-02 | 2009-12-16 | 联华电子股份有限公司 | 设计掩模的方法 |
| JP4324220B2 (ja) * | 2006-03-06 | 2009-09-02 | パナソニック株式会社 | フォトマスク、その作成方法、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法 |
| JP4993934B2 (ja) * | 2006-03-31 | 2012-08-08 | Ｈｏｙａ株式会社 | パターン欠陥検査方法、フォトマスクの製造方法、及び表示デバイス用基板の製造方法 |
| JP4934237B2 (ja) * | 2007-09-29 | 2012-05-16 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法 |
| JP2009128558A (ja) * | 2007-11-22 | 2009-06-11 | Hoya Corp | フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法 |
| JP5588633B2 (ja) | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
| TWI461833B (zh) * | 2010-03-15 | 2014-11-21 | Hoya Corp | 多調式光罩、多調式光罩之製造方法及圖案轉印方法 |
| JP2011215226A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | 多階調フォトマスク、多階調フォトマスクの製造方法、多階調フォトマスク用ブランク及びパターン転写方法 |
| JP5400698B2 (ja) * | 2010-04-28 | 2014-01-29 | Ｈｏｙａ株式会社 | 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法及び多階調フォトマスクの使用方法 |
-
2012
- 2012-06-01 JP JP2012126114A patent/JP6093117B2/ja active Active
-
2013
- 2013-05-14 TW TW104101989A patent/TWI516857B/zh active
- 2013-05-14 TW TW102117083A patent/TWI475316B/zh active
- 2013-05-14 TW TW104136941A patent/TWI605300B/zh active
- 2013-05-24 KR KR1020130059063A patent/KR101528973B1/ko active IP Right Grant
- 2013-05-30 CN CN201310208301.9A patent/CN103454851B/zh active Active
- 2013-05-30 CN CN201510763096.1A patent/CN105573046B/zh active Active
-
2014
- 2014-06-27 KR KR1020140080183A patent/KR101999412B1/ko active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW466584B (en) * | 1999-11-08 | 2001-12-01 | Matsushita Electronics Corp | Photomask, method of producing photomask, and method of making pattern using photomask |
| US20040086788A1 (en) * | 2002-04-26 | 2004-05-06 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| TW200827924A (en) * | 2006-12-25 | 2008-07-01 | Nanya Technology Corp | Alternating phase shift mask and method of the same |
| JP2009042753A (ja) * | 2007-07-19 | 2009-02-26 | Hoya Corp | フォトマスク及びその製造方法、並びにパターン転写方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101528973B1 (ko) | 2015-06-15 |
| KR20130135751A (ko) | 2013-12-11 |
| CN105573046A (zh) | 2016-05-11 |
| CN103454851B (zh) | 2016-05-18 |
| CN103454851A (zh) | 2013-12-18 |
| KR20140099427A (ko) | 2014-08-12 |
| TW201606421A (zh) | 2016-02-16 |
| TW201523123A (zh) | 2015-06-16 |
| TWI516857B (zh) | 2016-01-11 |
| TW201400977A (zh) | 2014-01-01 |
| JP2013250478A (ja) | 2013-12-12 |
| KR101999412B1 (ko) | 2019-07-11 |
| CN105573046B (zh) | 2019-12-10 |
| JP6093117B2 (ja) | 2017-03-08 |
| TWI605300B (zh) | 2017-11-11 |
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