TWI472546B - 丙烯酸酯聚氨酯化學機械研磨層 - Google Patents

丙烯酸酯聚氨酯化學機械研磨層 Download PDF

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Publication number
TWI472546B
TWI472546B TW101134644A TW101134644A TWI472546B TW I472546 B TWI472546 B TW I472546B TW 101134644 A TW101134644 A TW 101134644A TW 101134644 A TW101134644 A TW 101134644A TW I472546 B TWI472546 B TW I472546B
Authority
TW
Taiwan
Prior art keywords
group
isocyanate
chemical mechanical
bis
chain extender
Prior art date
Application number
TW101134644A
Other languages
English (en)
Chinese (zh)
Other versions
TW201323466A (zh
Inventor
謝嘉
大衛B 詹姆斯
洲H 董
Original Assignee
羅門哈斯電子材料Cmp控股公司
陶氏全球科技責任有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅門哈斯電子材料Cmp控股公司, 陶氏全球科技責任有限公司 filed Critical 羅門哈斯電子材料Cmp控股公司
Publication of TW201323466A publication Critical patent/TW201323466A/zh
Application granted granted Critical
Publication of TWI472546B publication Critical patent/TWI472546B/zh

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28Resins or natural or synthetic macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/06Other polishing compositions
    • C09G1/14Other polishing compositions based on non-waxy substances
    • C09G1/16Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40High-molecular-weight compounds
    • C08G18/48Polyethers
    • C08G18/4825Polyethers containing two hydroxy groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40High-molecular-weight compounds
    • C08G18/48Polyethers
    • C08G18/4854Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72Polyisocyanates or polyisothiocyanates
    • C08G18/74Polyisocyanates or polyisothiocyanates cyclic
    • C08G18/76Polyisocyanates or polyisothiocyanates cyclic aromatic
    • C08G18/7614Polyisocyanates or polyisothiocyanates cyclic aromatic containing only one aromatic ring
    • C08G18/7621Polyisocyanates or polyisothiocyanates cyclic aromatic containing only one aromatic ring being toluene diisocyanate including isomer mixtures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
TW101134644A 2011-09-29 2012-09-21 丙烯酸酯聚氨酯化學機械研磨層 TWI472546B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/248,123 US8512427B2 (en) 2011-09-29 2011-09-29 Acrylate polyurethane chemical mechanical polishing layer

Publications (2)

Publication Number Publication Date
TW201323466A TW201323466A (zh) 2013-06-16
TWI472546B true TWI472546B (zh) 2015-02-11

Family

ID=47878728

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101134644A TWI472546B (zh) 2011-09-29 2012-09-21 丙烯酸酯聚氨酯化學機械研磨層

Country Status (7)

Country Link
US (1) US8512427B2 (enExample)
JP (1) JP6073099B2 (enExample)
KR (1) KR101929055B1 (enExample)
CN (1) CN103072099B (enExample)
DE (1) DE102012018523A1 (enExample)
FR (1) FR2980798B1 (enExample)
TW (1) TWI472546B (enExample)

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US9238296B2 (en) * 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer
US9233451B2 (en) * 2013-05-31 2016-01-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad stack
RU2659400C2 (ru) * 2013-08-20 2018-07-02 ДАУ ГЛОБАЛ ТЕКНОЛОДЖИЗ ЭлЭлСи Полиуретановое эластомерное уплотнение для гидравлических насосов
US9102034B2 (en) * 2013-08-30 2015-08-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US20150065013A1 (en) * 2013-08-30 2015-03-05 Dow Global Technologies Llc Chemical mechanical polishing pad
US20150059254A1 (en) * 2013-09-04 2015-03-05 Dow Global Technologies Llc Polyurethane polishing pad
JP6365869B2 (ja) * 2014-03-19 2018-08-01 Dic株式会社 ウレタン組成物及び研磨材
US9259820B2 (en) * 2014-03-28 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with polishing layer and window
US9216489B2 (en) 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9064806B1 (en) 2014-03-28 2015-06-23 Rohm and Haas Electronics Materials CMP Holdings, Inc. Soft and conditionable chemical mechanical polishing pad with window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9314897B2 (en) 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9333620B2 (en) 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
KR102640690B1 (ko) * 2015-09-25 2024-02-23 씨엠씨 머티리얼즈 엘엘씨 높은 탄성률 비를 갖는 폴리우레탄 화학 기계적 연마 패드
CA3048653A1 (en) * 2017-01-12 2018-07-19 Basf Se Physical property improvement of polyurethanes
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
US10465097B2 (en) 2017-11-16 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aliphatic UV cured polyurethane optical endpoint detection windows with high UV transparency for CMP polishing pads
JP7099827B2 (ja) * 2018-01-26 2022-07-12 ニッタ・デュポン株式会社 研磨パッド
KR102197481B1 (ko) * 2019-06-27 2020-12-31 에스케이씨 주식회사 연마패드 및 이의 제조방법
US12006442B2 (en) 2019-09-11 2024-06-11 Applied Materials, Inc. Additive manufacturing of polishing pads
US12122013B2 (en) 2019-10-23 2024-10-22 Sk Enpulse Co., Ltd. Composition for polishing pad and polishing pad
TWI851930B (zh) * 2020-10-19 2024-08-11 美商Cmc材料有限責任公司 用於化學機械拋光墊之可uv固化樹脂
US11951591B2 (en) 2020-11-06 2024-04-09 Sk Enpulse Co., Ltd. Polishing pad, method for producing the same and method of fabricating semiconductor device using the same
KR102488112B1 (ko) * 2020-11-06 2023-01-12 에스케이엔펄스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102488115B1 (ko) * 2020-11-06 2023-01-12 에스케이엔펄스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
US11679531B2 (en) 2021-10-13 2023-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and preparation thereof
US12220784B2 (en) * 2021-10-13 2025-02-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and preparation thereof
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CN115415931B (zh) * 2022-07-26 2024-03-15 安徽禾臣新材料有限公司 一种半导体加工用化学机械抛光垫
CN117247739A (zh) * 2023-09-20 2023-12-19 上海宗易工贸有限公司 一种半导体晶片抛光材料及其制备方法

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Also Published As

Publication number Publication date
KR20130035225A (ko) 2013-04-08
CN103072099B (zh) 2015-06-17
JP6073099B2 (ja) 2017-02-01
DE102012018523A1 (de) 2013-04-04
US20130084702A1 (en) 2013-04-04
FR2980798A1 (fr) 2013-04-05
JP2013078839A (ja) 2013-05-02
FR2980798B1 (fr) 2016-06-17
US8512427B2 (en) 2013-08-20
TW201323466A (zh) 2013-06-16
KR101929055B1 (ko) 2018-12-13
CN103072099A (zh) 2013-05-01

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