TWI470755B - 佈線板及其製造方法，及具有佈線板之半導體裝置 - Google Patents

佈線板及其製造方法，及具有佈線板之半導體裝置 Download PDF

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Publication number
TWI470755B
TWI470755B TW97137687A TW97137687A TWI470755B TW I470755 B TWI470755 B TW I470755B TW 97137687 A TW97137687 A TW 97137687A TW 97137687 A TW97137687 A TW 97137687A TW I470755 B TWI470755 B TW I470755B
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TW
Taiwan
Prior art keywords
semiconductor substrate
diffusion layer
impurity diffusion
guard ring
wiring
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TW97137687A
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English (en)
Chinese (zh)
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TW200917444A (en
Inventor
村山啟
中島伸二
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新光電氣工業股份有限公司
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Publication of TW200917444A publication Critical patent/TW200917444A/zh
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Publication of TWI470755B publication Critical patent/TWI470755B/zh

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    • H10W42/00—
    • H10W20/20—
    • H10W42/60—
    • H10W42/80—
    • H10W72/01—
    • H10W90/00—
    • H10W90/724—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW97137687A 2007-10-01 2008-10-01 佈線板及其製造方法，及具有佈線板之半導體裝置 TWI470755B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007257504A JP4961617B2 (ja) 2007-10-01 2007-10-01 配線基板とその製造方法及び半導体装置

Publications (2)

Publication Number Publication Date
TW200917444A TW200917444A (en) 2009-04-16
TWI470755B true TWI470755B (zh) 2015-01-21

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TW97137687A TWI470755B (zh) 2007-10-01 2008-10-01 佈線板及其製造方法，及具有佈線板之半導體裝置

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Country Link
US (1) US8026576B2 (enExample)
EP (1) EP2045840B1 (enExample)
JP (1) JP4961617B2 (enExample)
TW (1) TWI470755B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343245B2 (ja) * 2008-05-15 2013-11-13 新光電気工業株式会社 シリコンインターポーザの製造方法
US7910473B2 (en) * 2008-12-31 2011-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon via with air gap
US8399354B2 (en) 2009-01-13 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon via with low-K dielectric liner
KR101127237B1 (ko) 2010-04-27 2012-03-29 주식회사 하이닉스반도체 반도체 집적회로
EP2602818A1 (en) * 2011-12-09 2013-06-12 Ipdia An interposer device
US20130154109A1 (en) * 2011-12-16 2013-06-20 Lsi Corporation Method of lowering capacitances of conductive apertures and an interposer capable of being reverse biased to achieve reduced capacitance
JP5684157B2 (ja) * 2012-01-04 2015-03-11 株式会社東芝 半導体装置
US9576881B2 (en) 2013-02-18 2017-02-21 Kabushiki Kaisha Toshiba Semiconductor device
JP5834030B2 (ja) 2013-02-18 2015-12-16 株式会社東芝 半導体装置
JP5982312B2 (ja) * 2013-03-22 2016-08-31 株式会社東芝 半導体装置
CN104425394B (zh) * 2013-08-29 2018-01-12 财团法人工业技术研究院 基板、其制造方法及其应用
JP2015072996A (ja) * 2013-10-02 2015-04-16 新光電気工業株式会社 半導体装置
JP2018044811A (ja) * 2016-09-13 2018-03-22 株式会社村田製作所 ピエゾ抵抗型センサ
WO2018182597A1 (en) 2017-03-29 2018-10-04 Intel Corporation Microelectronic device with embedded die substrate on interposer

Citations (3)

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US4484206A (en) * 1978-03-30 1984-11-20 Hitachi, Ltd. Zener diode with protective PN junction portions
JPH07263452A (ja) * 1994-03-25 1995-10-13 Sony Corp 半導体装置の製造方法
TW200505039A (en) * 2003-03-10 2005-02-01 Hamamatsu Photonics Kk A photo electric diodes array and the manufacturing method of the same and a radiation ray detector

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JP2858383B2 (ja) 1991-10-14 1999-02-17 株式会社デンソー 半導体装置の製造方法
JPH08139302A (ja) * 1994-11-14 1996-05-31 Sharp Corp 光半導体ウェハおよび光半導体受光素子の製造方法
CN1097849C (zh) * 1996-06-07 2003-01-01 罗姆股份有限公司 半导体芯片及半导体芯片的制造方法
JPH11162990A (ja) 1997-11-26 1999-06-18 Nec Corp 半導体装置およびその製造方法
EP1151476B1 (en) * 1999-11-11 2008-04-16 Nxp B.V. Semiconductor device having a field effect transistor and a method of manufacturing such a device
JP2002134506A (ja) * 2000-10-19 2002-05-10 Mitsubishi Electric Corp 半導体装置
US6498381B2 (en) * 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
JP3704072B2 (ja) * 2001-09-05 2005-10-05 株式会社東芝 半導体装置及びその製造方法
JP4222092B2 (ja) * 2003-05-07 2009-02-12 富士電機デバイステクノロジー株式会社 半導体ウェハ、半導体装置および半導体装置の製造方法
JP2005038888A (ja) * 2003-07-15 2005-02-10 Renesas Technology Corp 半導体記憶装置およびその製造方法
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP4889974B2 (ja) * 2005-08-01 2012-03-07 新光電気工業株式会社 電子部品実装構造体及びその製造方法
KR101314713B1 (ko) * 2006-06-16 2013-10-07 신꼬오덴기 고교 가부시키가이샤 반도체 장치, 그 제조 방법, 및 기판

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484206A (en) * 1978-03-30 1984-11-20 Hitachi, Ltd. Zener diode with protective PN junction portions
JPH07263452A (ja) * 1994-03-25 1995-10-13 Sony Corp 半導体装置の製造方法
TW200505039A (en) * 2003-03-10 2005-02-01 Hamamatsu Photonics Kk A photo electric diodes array and the manufacturing method of the same and a radiation ray detector

Also Published As

Publication number Publication date
EP2045840A2 (en) 2009-04-08
EP2045840B1 (en) 2017-06-28
TW200917444A (en) 2009-04-16
EP2045840A3 (en) 2012-01-11
US8026576B2 (en) 2011-09-27
JP2009088336A (ja) 2009-04-23
JP4961617B2 (ja) 2012-06-27
US20090085164A1 (en) 2009-04-02

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