TWI469237B - A mounting apparatus, a processing apparatus, and a temperature control method - Google Patents

A mounting apparatus, a processing apparatus, and a temperature control method Download PDF

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Publication number
TWI469237B
TWI469237B TW98101551A TW98101551A TWI469237B TW I469237 B TWI469237 B TW I469237B TW 98101551 A TW98101551 A TW 98101551A TW 98101551 A TW98101551 A TW 98101551A TW I469237 B TWI469237 B TW I469237B
Authority
TW
Taiwan
Prior art keywords
temperature
mounting table
supply
electric power
ratio
Prior art date
Application number
TW98101551A
Other languages
English (en)
Chinese (zh)
Other versions
TW200941621A (en
Inventor
荻野貴史
小松智仁
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200941621A publication Critical patent/TW200941621A/zh
Application granted granted Critical
Publication of TWI469237B publication Critical patent/TWI469237B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW98101551A 2008-01-19 2009-01-16 A mounting apparatus, a processing apparatus, and a temperature control method TWI469237B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008009925A JP5358956B2 (ja) 2008-01-19 2008-01-19 載置台装置、処理装置、温度制御方法及び記憶媒体

Publications (2)

Publication Number Publication Date
TW200941621A TW200941621A (en) 2009-10-01
TWI469237B true TWI469237B (zh) 2015-01-11

Family

ID=40885290

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98101551A TWI469237B (zh) 2008-01-19 2009-01-16 A mounting apparatus, a processing apparatus, and a temperature control method

Country Status (5)

Country Link
JP (1) JP5358956B2 (https=)
KR (2) KR20120085915A (https=)
CN (1) CN101911252B (https=)
TW (1) TWI469237B (https=)
WO (1) WO2009090899A1 (https=)

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* Cited by examiner, † Cited by third party
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JP5026549B2 (ja) * 2010-04-08 2012-09-12 シャープ株式会社 加熱制御システム、それを備えた成膜装置、および温度制御方法
CN103628046B (zh) * 2012-08-24 2015-11-11 中微半导体设备(上海)有限公司 一种调节基片表面温度的控温系统和控温方法
CN102851652A (zh) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 一种用于mocvd设备的加热器
JP2014112594A (ja) * 2012-12-05 2014-06-19 Denso Corp スーパージャンクション構造を有する半導体装置の製造方法
CN104131268B (zh) * 2013-05-03 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 分区域加热方法、装置和半导体设备
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
CN104233195B (zh) * 2014-08-28 2017-02-08 京东方科技集团股份有限公司 一种蒸镀设备及蒸镀方法
CN104716077A (zh) * 2015-03-25 2015-06-17 上海华力微电子有限公司 可控温加热式传送腔及其工艺装置和控温加热方法
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6570894B2 (ja) 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
JP6447393B2 (ja) 2015-07-06 2019-01-09 東京エレクトロン株式会社 成膜処理装置、成膜処理方法及び記憶媒体
JP6507953B2 (ja) 2015-09-08 2019-05-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN107022754B (zh) 2016-02-02 2020-06-02 东京毅力科创株式会社 基板处理装置
JP6740881B2 (ja) 2016-02-02 2020-08-19 東京エレクトロン株式会社 基板処理装置
US10345802B2 (en) * 2016-02-17 2019-07-09 Lam Research Corporation Common terminal heater for ceramic pedestals used in semiconductor fabrication
JP6688172B2 (ja) * 2016-06-24 2020-04-28 東京エレクトロン株式会社 基板処理システムおよび方法
KR102304247B1 (ko) * 2016-06-27 2021-09-17 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법 및 기억 매체
CN108054087B (zh) * 2017-12-07 2020-05-29 德淮半导体有限公司 晶圆键合中的退火装置及退火方法
JP7018823B2 (ja) * 2018-05-29 2022-02-14 東京エレクトロン株式会社 モデル生成装置、モデル生成プログラムおよびモデル生成方法
JP7094804B2 (ja) * 2018-07-03 2022-07-04 東京エレクトロン株式会社 基板処理装置および基板処理方法
US12288672B2 (en) * 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
JP7449799B2 (ja) * 2020-07-09 2024-03-14 東京エレクトロン株式会社 載置台の温度調整方法及び検査装置
JP7845145B2 (ja) * 2022-11-07 2026-04-14 東京エレクトロン株式会社 基板を処理する装置、及び基板を処理する方法
KR102844318B1 (ko) * 2023-12-19 2025-08-08 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040149227A1 (en) * 2000-12-28 2004-08-05 Tetsuya Saito Substrate heating device and method of purging the device
JP2007335500A (ja) * 2006-06-13 2007-12-27 Hitachi Kokusai Electric Inc 基板処理装置の温度制御方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001313260A (ja) * 2000-04-28 2001-11-09 Kyocera Corp 円盤状ヒータおよびウエハ処理装置
JP2005243243A (ja) * 2004-02-24 2005-09-08 Ngk Insulators Ltd 加熱方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040149227A1 (en) * 2000-12-28 2004-08-05 Tetsuya Saito Substrate heating device and method of purging the device
JP2007335500A (ja) * 2006-06-13 2007-12-27 Hitachi Kokusai Electric Inc 基板処理装置の温度制御方法

Also Published As

Publication number Publication date
CN101911252A (zh) 2010-12-08
WO2009090899A1 (ja) 2009-07-23
JP5358956B2 (ja) 2013-12-04
CN101911252B (zh) 2012-05-23
TW200941621A (en) 2009-10-01
KR101374442B1 (ko) 2014-03-24
JP2009170822A (ja) 2009-07-30
KR20120085915A (ko) 2012-08-01
KR20100113494A (ko) 2010-10-21

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