TWI467649B - Heat transfer structure and substrate processing device - Google Patents

Heat transfer structure and substrate processing device Download PDF

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Publication number
TWI467649B
TWI467649B TW96124733A TW96124733A TWI467649B TW I467649 B TWI467649 B TW I467649B TW 96124733 A TW96124733 A TW 96124733A TW 96124733 A TW96124733 A TW 96124733A TW I467649 B TWI467649 B TW I467649B
Authority
TW
Taiwan
Prior art keywords
heat transfer
focus ring
heat
substrate
electrostatic chuck
Prior art date
Application number
TW96124733A
Other languages
English (en)
Chinese (zh)
Other versions
TW200818311A (en
Inventor
Masaaki Miyagawa
Tetsuji Sato
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200818311A publication Critical patent/TW200818311A/zh
Application granted granted Critical
Publication of TWI467649B publication Critical patent/TWI467649B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
TW96124733A 2006-07-07 2007-07-06 Heat transfer structure and substrate processing device TWI467649B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006188262A JP2008016727A (ja) 2006-07-07 2006-07-07 伝熱構造体及び基板処理装置

Publications (2)

Publication Number Publication Date
TW200818311A TW200818311A (en) 2008-04-16
TWI467649B true TWI467649B (zh) 2015-01-01

Family

ID=39073450

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96124733A TWI467649B (zh) 2006-07-07 2007-07-06 Heat transfer structure and substrate processing device

Country Status (3)

Country Link
JP (1) JP2008016727A (ja)
KR (1) KR100861261B1 (ja)
TW (1) TWI467649B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP2011181677A (ja) * 2010-03-01 2011-09-15 Tokyo Electron Ltd フォーカスリング及び基板載置システム
JP5619486B2 (ja) * 2010-06-23 2014-11-05 東京エレクトロン株式会社 フォーカスリング、その製造方法及びプラズマ処理装置
JP6215002B2 (ja) * 2013-10-25 2017-10-18 東京エレクトロン株式会社 フォーカスリングの製造方法及びプラズマ処理装置の製造方法
JP6552346B2 (ja) * 2015-09-04 2019-07-31 東京エレクトロン株式会社 基板処理装置
KR102088356B1 (ko) * 2018-03-09 2020-03-12 (주)씨앤아이테크놀로지 박막 증착 장치 및 박막 증착 방법
JP2020080365A (ja) * 2018-11-13 2020-05-28 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ウェハーステージ、半導体製造装置、ウェハーステージの製造方法
US11430685B2 (en) 2019-03-19 2022-08-30 Ngk Insulators, Ltd. Wafer placement apparatus and method of manufacturing the same
JP7370228B2 (ja) 2019-11-22 2023-10-27 東京エレクトロン株式会社 プラズマ処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US6096161A (en) * 1997-12-24 2000-08-01 Samsung Electronics Co., Ltd. Dry etching apparatus having means for preventing micro-arcing
US6148765A (en) * 1998-06-30 2000-11-21 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6693790B2 (en) * 2001-04-12 2004-02-17 Komatsu, Ltd. Static electricity chuck apparatus and semiconductor producing apparatus provided with the static electricity chuck apparatus
US6723202B2 (en) * 2000-04-25 2004-04-20 Tokyo Electron Limited Worktable device and plasma processing apparatus for semiconductor process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2005298773A (ja) 2004-04-16 2005-10-27 Geltec Co Ltd 半導電性熱伝導材
JP5015436B2 (ja) 2004-08-30 2012-08-29 東レ・ダウコーニング株式会社 熱伝導性シリコーンエラストマー、熱伝導媒体および熱伝導性シリコーンエラストマー組成物
JP2006165136A (ja) * 2004-12-06 2006-06-22 Konica Minolta Holdings Inc エッチング方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US6096161A (en) * 1997-12-24 2000-08-01 Samsung Electronics Co., Ltd. Dry etching apparatus having means for preventing micro-arcing
US6148765A (en) * 1998-06-30 2000-11-21 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6723202B2 (en) * 2000-04-25 2004-04-20 Tokyo Electron Limited Worktable device and plasma processing apparatus for semiconductor process
US6693790B2 (en) * 2001-04-12 2004-02-17 Komatsu, Ltd. Static electricity chuck apparatus and semiconductor producing apparatus provided with the static electricity chuck apparatus

Also Published As

Publication number Publication date
KR20080005116A (ko) 2008-01-10
KR100861261B1 (ko) 2008-10-01
TW200818311A (en) 2008-04-16
JP2008016727A (ja) 2008-01-24

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