KR100861261B1 - 전열 구조체 및 기판 처리 장치 - Google Patents

전열 구조체 및 기판 처리 장치 Download PDF

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Publication number
KR100861261B1
KR100861261B1 KR1020070067707A KR20070067707A KR100861261B1 KR 100861261 B1 KR100861261 B1 KR 100861261B1 KR 1020070067707 A KR1020070067707 A KR 1020070067707A KR 20070067707 A KR20070067707 A KR 20070067707A KR 100861261 B1 KR100861261 B1 KR 100861261B1
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KR
South Korea
Prior art keywords
focus ring
electrostatic chuck
wafer
heat
heat transfer
Prior art date
Application number
KR1020070067707A
Other languages
English (en)
Korean (ko)
Other versions
KR20080005116A (ko
Inventor
마사아키 미야가와
데츠지 사토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20080005116A publication Critical patent/KR20080005116A/ko
Application granted granted Critical
Publication of KR100861261B1 publication Critical patent/KR100861261B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1020070067707A 2006-07-07 2007-07-05 전열 구조체 및 기판 처리 장치 KR100861261B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006188262A JP2008016727A (ja) 2006-07-07 2006-07-07 伝熱構造体及び基板処理装置
JPJP-P-2006-00188262 2006-07-07

Publications (2)

Publication Number Publication Date
KR20080005116A KR20080005116A (ko) 2008-01-10
KR100861261B1 true KR100861261B1 (ko) 2008-10-01

Family

ID=39073450

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070067707A KR100861261B1 (ko) 2006-07-07 2007-07-05 전열 구조체 및 기판 처리 장치

Country Status (3)

Country Link
JP (1) JP2008016727A (ja)
KR (1) KR100861261B1 (ja)
TW (1) TWI467649B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102194634A (zh) * 2010-03-01 2011-09-21 东京毅力科创株式会社 聚焦环和基板载置系统

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP5619486B2 (ja) * 2010-06-23 2014-11-05 東京エレクトロン株式会社 フォーカスリング、その製造方法及びプラズマ処理装置
JP6215002B2 (ja) * 2013-10-25 2017-10-18 東京エレクトロン株式会社 フォーカスリングの製造方法及びプラズマ処理装置の製造方法
JP6552346B2 (ja) * 2015-09-04 2019-07-31 東京エレクトロン株式会社 基板処理装置
KR102088356B1 (ko) * 2018-03-09 2020-03-12 (주)씨앤아이테크놀로지 박막 증착 장치 및 박막 증착 방법
JP2020080365A (ja) * 2018-11-13 2020-05-28 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ウェハーステージ、半導体製造装置、ウェハーステージの製造方法
US11430685B2 (en) 2019-03-19 2022-08-30 Ngk Insulators, Ltd. Wafer placement apparatus and method of manufacturing the same
JP7370228B2 (ja) 2019-11-22 2023-10-27 東京エレクトロン株式会社 プラズマ処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010098814A (ko) * 2000-04-25 2001-11-08 히가시 데쓰로 반도체 처리용 재치대 장치 및 플라즈마 처리 장치
KR20040093043A (ko) * 2003-04-24 2004-11-04 동경 엘렉트론 주식회사 플라즈마 처리 장치, 포커스 링 및 서셉터
JP2005298773A (ja) 2004-04-16 2005-10-27 Geltec Co Ltd 半導電性熱伝導材
WO2006025552A1 (en) 2004-08-30 2006-03-09 Dow Corning Toray Co., Ltd. Thermoconductive silicone elastomer, thermoconductive silicone elastomer composition and thermoconductive medium

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
KR100258984B1 (ko) * 1997-12-24 2000-08-01 윤종용 건식 식각 장치
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6693790B2 (en) * 2001-04-12 2004-02-17 Komatsu, Ltd. Static electricity chuck apparatus and semiconductor producing apparatus provided with the static electricity chuck apparatus
JP2006165136A (ja) * 2004-12-06 2006-06-22 Konica Minolta Holdings Inc エッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010098814A (ko) * 2000-04-25 2001-11-08 히가시 데쓰로 반도체 처리용 재치대 장치 및 플라즈마 처리 장치
KR20040093043A (ko) * 2003-04-24 2004-11-04 동경 엘렉트론 주식회사 플라즈마 처리 장치, 포커스 링 및 서셉터
JP2005298773A (ja) 2004-04-16 2005-10-27 Geltec Co Ltd 半導電性熱伝導材
WO2006025552A1 (en) 2004-08-30 2006-03-09 Dow Corning Toray Co., Ltd. Thermoconductive silicone elastomer, thermoconductive silicone elastomer composition and thermoconductive medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102194634A (zh) * 2010-03-01 2011-09-21 东京毅力科创株式会社 聚焦环和基板载置系统

Also Published As

Publication number Publication date
TWI467649B (zh) 2015-01-01
KR20080005116A (ko) 2008-01-10
TW200818311A (en) 2008-04-16
JP2008016727A (ja) 2008-01-24

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