TWI466187B - Plasma processing method - Google Patents

Plasma processing method Download PDF

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Publication number
TWI466187B
TWI466187B TW101104378A TW101104378A TWI466187B TW I466187 B TWI466187 B TW I466187B TW 101104378 A TW101104378 A TW 101104378A TW 101104378 A TW101104378 A TW 101104378A TW I466187 B TWI466187 B TW I466187B
Authority
TW
Taiwan
Prior art keywords
trench
forming step
plasma
nitride film
oxide film
Prior art date
Application number
TW101104378A
Other languages
English (en)
Chinese (zh)
Other versions
TW201327661A (zh
Inventor
伊東亨
石村裕昭
河內昭人
渡邊勇人
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201327661A publication Critical patent/TW201327661A/zh
Application granted granted Critical
Publication of TWI466187B publication Critical patent/TWI466187B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G17/00—Cultivation of hops, vines, fruit trees, or like trees
    • A01G17/04—Supports for hops, vines, or trees
    • A01G17/10—Holders for boughs or branches
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G17/00—Cultivation of hops, vines, fruit trees, or like trees
    • A01G17/04—Supports for hops, vines, or trees
    • A01G17/06—Trellis-work
    • A01G17/08—Tools e.g. clips for attaching hops, vines, or boughs to trellis-work; Tying devices
    • A01G17/085—Espalier machines; Tying machines
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G9/00—Cultivation in receptacles, forcing-frames or greenhouses; Edging for beds, lawn or the like
    • A01G9/12—Supports for plants; Trellis for strawberries or the like
    • A01G9/128—Fixing of plants to supports, e.g. by means of clips
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
    • F16B7/00—Connections of rods or tubes, e.g. of non-circular section, mutually, including resilient connections
    • F16B7/04—Clamping or clipping connections
    • F16B7/0406—Clamping or clipping connections for rods or tubes being coaxial
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Botany (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
TW101104378A 2011-12-21 2012-02-10 Plasma processing method TWI466187B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011279150A JP2013131587A (ja) 2011-12-21 2011-12-21 プラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201327661A TW201327661A (zh) 2013-07-01
TWI466187B true TWI466187B (zh) 2014-12-21

Family

ID=48654960

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101104378A TWI466187B (zh) 2011-12-21 2012-02-10 Plasma processing method

Country Status (4)

Country Link
US (1) US9018075B2 (https=)
JP (1) JP2013131587A (https=)
KR (1) KR101312473B1 (https=)
TW (1) TWI466187B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6095528B2 (ja) * 2013-09-04 2017-03-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
EP3067919A1 (en) * 2015-03-11 2016-09-14 IMEC vzw Method for forming vertical structures in a semiconductor target layer
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9966312B2 (en) * 2015-08-25 2018-05-08 Tokyo Electron Limited Method for etching a silicon-containing substrate
WO2018057493A1 (en) * 2016-09-21 2018-03-29 Tokyo Electron Limited Method of patterning intersecting structures
US10529671B2 (en) 2016-12-13 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and method for forming the same
US20200135898A1 (en) * 2018-10-30 2020-04-30 International Business Machines Corporation Hard mask replenishment for etching processes
CN112534552B (zh) * 2019-07-18 2024-04-12 株式会社日立高新技术 等离子处理装置
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR102916926B1 (ko) * 2022-07-25 2026-01-23 주식회사 히타치하이테크 플라스마 처리 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065479A1 (en) * 2007-09-07 2009-03-12 Koichi Nakaune Dry etching method of high-k film
WO2011115761A2 (en) * 2010-03-17 2011-09-22 Applied Materials, Inc. Invertable pattern loading with dry etch

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3096008B2 (ja) * 1997-03-13 2000-10-10 ソニー株式会社 半導体装置の製造方法
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
EP1077475A3 (en) * 1999-08-11 2003-04-02 Applied Materials, Inc. Method of micromachining a multi-part cavity
JP2003007676A (ja) * 2001-06-18 2003-01-10 Sony Corp 半導体装置の製造方法
JP4854874B2 (ja) 2001-06-22 2012-01-18 東京エレクトロン株式会社 ドライエッチング方法
US20090275202A1 (en) * 2006-11-22 2009-11-05 Masahiko Tanaka Silicon structure having an opening which has a high aspect ratio, method for manufacturing the same, system for manufacturing the same, and program for manufacturing the same, and method for manufacturing etching mask for the silicon structure
JP5229711B2 (ja) * 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
KR20090003716A (ko) * 2007-07-03 2009-01-12 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065479A1 (en) * 2007-09-07 2009-03-12 Koichi Nakaune Dry etching method of high-k film
WO2011115761A2 (en) * 2010-03-17 2011-09-22 Applied Materials, Inc. Invertable pattern loading with dry etch

Also Published As

Publication number Publication date
KR101312473B1 (ko) 2013-09-27
US9018075B2 (en) 2015-04-28
KR20130072105A (ko) 2013-07-01
TW201327661A (zh) 2013-07-01
US20130164911A1 (en) 2013-06-27
JP2013131587A (ja) 2013-07-04

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