TWI463596B - Construction of substrate support table and plasma processing device - Google Patents
Construction of substrate support table and plasma processing device Download PDFInfo
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- TWI463596B TWI463596B TW099117023A TW99117023A TWI463596B TW I463596 B TWI463596 B TW I463596B TW 099117023 A TW099117023 A TW 099117023A TW 99117023 A TW99117023 A TW 99117023A TW I463596 B TWI463596 B TW I463596B
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- 239000000758 substrate Substances 0.000 title claims description 67
- 238000010276 construction Methods 0.000 title 1
- 238000007789 sealing Methods 0.000 claims description 32
- 238000005260 corrosion Methods 0.000 claims description 23
- 230000007797 corrosion Effects 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 18
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 230000008602 contraction Effects 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- General Chemical & Material Sciences (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
本發明,是關於將基板支撐於上表面,並且能夠上下運動之基板支撐台的構造,還有是關於具有該基板支撐台之構造的電漿處理裝置。
在真空下實施所欲處理的處理裝置中,作為先行技術者,周知有:能夠改變處理對象之基板的位置的裝置(專利文獻1、2)。例如,用以製造半導體裝置的電漿處理裝置,具體而言,在電漿CVD(Chemical Vapor Deposition)裝置、電漿蝕刻裝置中,所周知之裝置為具備有:相對於電漿能夠調整基板位置的基板支撐台。於如此的電漿處理裝置,係藉由調節基板與電漿之間的距離,能夠將處理率、面內均一性、電漿損傷調整於所期望的狀態,而能夠製成自由度更高的電漿處理裝置。
[專利文獻1] 日本特開2003-229408號公報
[專利文獻2] 日本特開2003-289068號公報
於第3圖,是顯示以往之電漿處理裝置的斷面圖,先說明其概略及問題點。又,於第3圖中,是省略了電漿產生機構、氣體供給機構、真空機構等的圖示。
如第3圖所示,以往的電漿處理裝置30,是將基板37載置在:配置於真空處理室31之內部的載置台36上,並藉由在真空處理室31內產生的電漿P,對基板37施以所期望的電漿處理者。於電漿處理時,基板37的位置,是藉由驅動機構38,能夠相對於電漿P進行調整。
驅動機構38,具體而言,係具有:從下部支撐載置台36的驅動構件34、及支撐驅動構件34的驅動板33、以及使驅動板33能夠移動地進行支撐的複數個滾珠螺桿35,藉由使滾珠螺桿35旋轉,來使驅動板33、驅動構件34、載置台36及基板37上下運動,其結果,可相對於電漿P調整基板37的位置。並且,在真空處理室31的底部與驅動板33之間,設有伸縮軟管32,藉由該伸縮軟管32,將真空處理室31內部保持於真空,並且能夠執行驅動機構38的上下運動。
以往的電漿處理裝置30,如第3圖所示,是在載置台36的正下方位置來配置伸縮軟管3的構造,不過如此之構造,具有如以下的問題。
(1)伸縮軟管,一般而言,雖然是使用不鏽鋼製的,不過當在高溫狀態下暴露在腐蝕性氣體時,腐蝕不斷進行,就會造成壽命減短、或是成為金屬污染的原因。特別是,在電漿處理裝置中,將載置台設在400℃左右的高溫極為一般,作為蝕刻氣體(清潔用氣體),並且由於是使用NF3
、CF4
、SF6
等之腐蝕性氣體,所以在易腐蝕的環境下使用伸縮軟管。
(2)為了避免腐蝕,只要在離開腐蝕性氣體或高溫部分之處設置伸縮軟管即可。然而,載置台與伸縮軟管之間的距離拉開之情形時(請參照第3圖),就會增大驅動部分的體積、重量,對驅動機構造成大的負擔。又,當驅動部分的體積、重量變大時,會使保養維修時的作業性惡化,造成保養維修的負擔變大。
(3)由電漿處理所產生的生成物會附著在真空處理室內部之構成零件的表面,而附著在伸縮軟管表面之情形時,會藉由伸縮軟管本身的伸縮,使所附著的生成物剝離而成為產生塵粒的主要因素。
本發明是有鑑於上述課題所研創,其目的是在於提供一種可抑制伸縮軟管的腐蝕、以及來自伸縮軟管的塵屑散出,並且縮小被驅動部分之體積、重量之基板支撐台的構造及電漿處理裝置。
用以解決上述課題之第1發明之基板支撐台的構造,為針對於在真空容器內使用腐蝕性氣體之處理裝置所使用,並具備有驅動機構用來改變處理對象之基板之位置的基板支撐台的構造,其特徵為:具有圓筒狀的內筒、伸縮軟管、圓筒狀的外筒、圓盤狀的載置台、包覆構件、以及驅動構件,該內筒,是中介第1密封構件,使其一端側安裝於上述真空容器之內壁之開口部的周圍;該伸縮軟管,是被配置於上述內筒的外周側,並且中介第2密封構件,使其一端側安裝於上述內筒的另一端側;該外筒,是被配置於上述伸縮軟管的外周側,並且中介第3密封構件,使其一端側安裝於上述伸縮軟管的另一端側;該載置台,是用以載置上述基板,並中介第4密封構件,以將上述外筒之另一端側的開口部予以閉塞之方式進行安裝;該包覆構件,是由具有耐腐蝕性之材料所形成,並以包覆上述外筒整面之方式與上述外筒緊密貼接地設置;該驅動構件,是通過上述開口部及上述內筒的內部,安裝於上述載置台的背面,並藉由上述驅動機構所驅動。
用以解決上述課題之第2發明之基板支撐台的構造,為針對於在真空容器內使用腐蝕性氣體之處理裝置所使用,並具備有驅動機構用來改變處理對象之基板之位置的基板支撐台的構造,其特徵為:具有圓筒狀的內筒、伸縮軟管、圓筒狀的外筒、圓盤狀的載置台、包覆構件、以及驅動構件,該內筒,是中介第1密封構件,使其下端側安裝於上述真空容器之內壁之開口部的周圍;該伸縮軟管,是被配置於上述內筒的外周側,並且中介第2密封構件,使其上端側安裝於上述內筒的上端側;該外筒,是被配置於上述伸縮軟管的外周側,並且中介第3密封構件,使其下端側安裝於上述伸縮軟管的下端側;該載置台,是用以載置上述基板,並中介第4密封構件,以將上述外筒之上端側的開口部予以閉塞之方式進行安裝;該包覆構件,是由具有耐腐蝕性之材料所形成,並以包覆上述外筒整面之方式與上述外筒緊密貼接地設置;該驅動構件,是通過上述開口部及上述內筒的內部,安裝於上述載置台的背面,並藉由上述驅動機構所驅動。
亦即,藉由作為上述第1、第2發明所述之基板支撐台的構造,一面保持真空容器側的真空,一面從內側呈同心圓狀依序配置:圓筒狀的內筒、伸縮軟管、外筒、以及包覆構件。並且,藉由驅動構件所驅動的被驅動部分,為伸縮軟管與載置台之間的構件,亦即,只有伸縮軟管、外筒、包覆構件、以及載置台會被驅動。
用以解決上述課題之第3發明之基板支撐台的構造,是如上述第1、第2發明所述之基板支撐台的構造,其中,熔著至少以下其中一方:將上述內筒與上述伸縮軟管之間予以熔著以取代上述第2密封構件,和將上述伸縮軟管與上述外筒之間予以熔著以取代上述第3密封構件,來作為其特徵。
用以解決上述課題之第4發明之基板支撐台的構造,是如上述第1、第2發明所述之基板支撐台的構造,其中,更進一步地,將由具有耐腐蝕性材料所形成之圓筒狀的外部構裝構件,以覆蓋於上述包覆構件整面之方式設置於上述包覆構件的外周側,來作為其特徵。
用以解決上述課題之第5發明之基板支撐台的構造,是如上述第1、第2發明所述之基板支撐台的構造,其中,上述處理裝置為電漿處理裝置,來作為其特徵。
又,用以解決上述課題之第6發明之電漿處理裝置,其特徵為:具有如上述第1、第2發明所述之基板支撐台的構造。
依據第1~第3發明,由於是將內筒、伸縮軟管、外筒、以及包覆構件,依序從內側呈同心圓狀地配置,所以伸縮軟管可以受到外筒及包覆構件所保護,而不易曝露在腐蝕性氣體中,所以可以抑制伸縮軟管的腐蝕,也可以抑制由腐蝕所造成的金屬污染。特別是,將載置台設在高溫中,例如,溫度控制於400℃之情形時,伸縮軟管雖有被高溫腐蝕之虞,但由於在載置台與伸縮軟管之間存在有外筒及包覆構件,伸縮軟管本身的溫度不致於成為高溫,所以也可以抑制高溫腐蝕,亦可以抑制由高溫腐蝕所造成的金屬污染。又,藉由驅動構件所驅動的被驅動部分,因為只有伸縮軟管、外筒、包覆構件、以及載置台,所以相較於以往之技術,可以減少被驅動部分的體積、重量,也可以減少對伸縮軟管或驅動機構的負擔。再者,當於驅動機構發生不良狀況時,藉由載置台背面的大氣,使載置台被往真空側推壓時,由於伸縮軟管是朝向收縮方向變化,所以伸縮軟管不會伸長而斷裂,而可以保持裝置的安全性。依據以上之效果,可以謀求基板支撐台的構造其性能、信賴性的提升。
依據第4發明,由於於包覆構件的外周側更進一步地設置具有耐腐蝕性材料所形成的外部構裝構件,而可以更加抑制伸縮軟管的腐蝕。
依據第5、第6發明,藉由將第1~第2發明所述之基板支撐台的構造適用在電漿處理裝置,由於在外筒、包覆構件等的內側受保護之伸縮軟管的表面,不易附著由電漿處理所產生的產生物,所以即使伸縮軟管進行伸縮,也較少塵粒本身的產生。
對於本發明之基板支撐台之構造的實施形態例,是參照第1圖~第2圖,進行其說明。又,雖是例示以電漿CVD裝置作為其一例,不過並不限於電漿CVD裝置,也可以適用於電漿蝕刻裝置,再者,只要是在真空容器內移動用以支撐處理對象物的支撐台,並且在該真空容器內使用腐蝕性氣體之處理裝置,亦可以適用在如此條件之其他的裝置。
(實施例1)
第1圖、第2圖,是本發明之基板支撐台之構造之實施形態之一例的斷面圖,第1圖,是圖示出於電漿CVD裝置,位於下方位置的基板支撐台;第2圖,是圖示出位於上方位置的基板支撐台。又,於第1圖、第2圖中,為省略電漿產生機構、氣體供給機構、真空機構等的圖示。
於本實施例中,電漿處理裝置10,係具有:內部被施以真空的真空處理室(真空容器)11、以及配置在真空處理室11之內部,用以載置基板17的圓盤狀載置台16。
而且,載置台16,是藉由以下的支撐構造所支撐。具體而言,是成為具有:圓筒狀的內筒12、伸縮軟管13、以及圓筒狀的外筒14;該內筒12,其成為下端側(或是一端側)的下部凸緣12a是被安裝在真空處理室11之底部11a(或是內壁)之開口部11b的周圍;該伸縮軟管13,是被配置在內筒12的外周側,並且其成為上端側(或是一端側)的上部凸緣13a是被安裝在內筒12之上端側(或是另一端側)的外周面;該外筒14,是被配置在伸縮軟管13的外周側,並且其下端側(或是一端側)是被安裝在成為伸縮軟管13之下端側(或是另一端側)的下部凸緣13b,並以閉塞住外筒14之上端側(或是另一端側)的開口部之方式,使載置台16安裝於上部凸緣14a。又,於外筒14的外周,設有能將外筒14整面覆蓋地緊密貼接於外周面的包覆構件15(蓋設構件)。亦即,於載置台16的正下方,內筒12是被配置於最內周側,而成為從內側以同心圓狀地依序設置:相互不同直徑之圓筒狀的內筒12,伸縮軟管13、外筒14、以及包覆構件15之構造。
又,底部11a與下部凸緣12a之間,是中介O型環等之密封構件(第1密封構件)而安裝。同樣地,內筒12與上部凸緣13a之間,是中介O型環等之密封構件(第2密封構件)而安裝,又,下部凸緣13b與外筒14之間,是中介O型環等之密封構件(第3密封構件)而安裝,又,上部凸緣14a與載置台16之間,是中介O型環等之密封構件(第4密封構件)而安裝。亦即,真空處理室11、內筒12、伸縮軟管13、外筒14、以及載置台16彼此相互之間,中介密封構件安裝,藉由如此之構成,一面將真空處理室11內部保持於真空,同時能夠進行由後述的驅動機構24所產生的上下運動。又,對於內筒12、伸縮軟管13、以及外筒14,亦可使內筒12與伸縮軟管13之間、以及伸縮軟管13與外筒14之間之至少一方,以不會洩漏地藉由熔接而熔著而成一體化,並保持真空之構成。
又,內筒12、伸縮軟管13、以及外筒14之中,為了保持即使在高溫下仍可支撐載置台16的構造,其中至少外筒14,是以熔點較高的金屬或是合金,例如實施為不鏽鋼製等為佳。又,包覆構件15,為了避免由於腐蝕性氣體所造成之外筒14的高溫腐蝕,故以具有由耐腐蝕性的材料所構成,例如是由將表面進行氧化鋁膜加工的鋁、或是,高純度氧化鋁等之陶瓷材料所形成。特別是,由於載置台16是有被設定在400℃左右的高溫之情形,故與載置台16直接接觸之上部凸緣14a的部分,係以無縫隙地緊密貼接於包覆構件15為佳。例如,如第1圖、第2圖所示,上部凸緣14a突出於外周側之情形時,包覆構件15的上端部15a,亦照著該形狀而形成,以無縫隙地緊密貼接方式來實施。其結果,可以使外筒14儘可能不暴露在腐蝕性氣體。
又,於包覆構件15的更外周側,以全面包覆包覆構件15之方式地,設置圓筒狀的裙部構件(外部構裝構件)18亦可。該裙部構件18,係與包覆構件15相同樣地,是由具有耐腐蝕性材料所構成,例如,是由將表面進行氧化鋁膜加工的鋁、或是,高純度氧化鋁等之陶瓷材料所形成。藉由設置裙部構件18,可將流動於該外周側的氣體予以整流,並且防止氣體朝向外筒14、伸縮軟管13、以及內筒12側進入,其結果,防止外筒14、伸縮軟管13、以及內筒12的腐蝕,防止由腐蝕所造成的金屬污染,同時增長了該等產品壽命。
又,載置台16,是藉由驅動機構24,而能夠上下運動。驅動機構24,具體而言,係具有:通過開口部11b及內筒12之內部,而安裝於載置台16之背面的驅動構件21、及支撐驅動構件21的驅動板22、以及能夠移動地支撐驅動板22之複數根滾珠螺桿23,藉由使滾珠螺桿23旋轉而使驅動板22、驅動構件21、載置台16以及基板17上下運動,而使基板17的位置改變。
在將基板17載置於載置台16上之情況時,如第1圖所示,載置台16是被配置在下方的位置,並使用沒有圖示出的機械臂,通過閘門20來進行載置。另一方面,在對載置在載置台16上之基板17施以電漿處理之情況時,如第2圖所示,載置台16是被配置在上方的位置,並藉由調整相對於電漿P的位置,來進行可取得所需要之製程結果的電漿處理。
藉由設定成以上所述的構造,即使將載置台16加熱至400℃左右,外筒14,可受到包覆構件15所保護,減少高溫部分曝露於腐蝕性氣體的可能性,而抑制高溫腐蝕。又,伸縮軟管13、還有內筒12,由於離載置台16的路徑較遠,不易熱傳導,所以不會成為高溫,即使曝露在腐蝕性氣體中,亦可抑制高溫腐蝕。因此,對於為金屬製之構件的內筒12、伸縮軟管13、以及外筒14,可使此等構件的高溫腐蝕受到抑制,因而可以增長該等構件的產品壽命,並且可以抑制來自於該等構件的金屬污染。
又,藉由設定成以上所述的構造,由於可以於基板17搬運時伸長的伸縮軟管13,在對基板17進行電漿處理時縮短,所以附著在伸縮軟管13之表面的產生物或副產生物變少。特別是,於電漿CVD裝置之情形時,因為對伸縮軟管13之表面的形成膜變少,所以主要成因於形成膜之薄膜的膜剝離所產生的塵粒變少。
又,藉由設定成以上所述的構造,可以將載置台16的背面設定在大氣壓下。為電漿處理裝置之情形時,在載置台16設置有:用來將基板17靜電吸附的靜電吸附用電極、用來對基板17施加偏壓之偏壓用電極、用來加熱基板17的加熱器、用來對基板17進行溫度控制用冷媒的流路、用來偵測基板17及載置台16之溫度的溫度感應器等之各式各樣的構件。藉由把對此等構件之接連部分設在大氣壓下,相對於靜電吸附電極、偏壓用電極及加熱器等之進行高電壓施加部分,可以防止放電。又,相對於流路的接連部分,假若,冷媒有所洩漏時,因為是洩漏在大氣側,所以不會有污染真空處理室11側之情形。
又,藉由設定成以上所述的構造,由於以伸縮軟管13的上部凸緣13a作為境界,只有使載置台16側上下運動,而內筒12側為固定,所以可以縮小在真空處理室11內部之被驅動部分的體積、重量,而可以減少對驅動機構24的負擔。又,遇到驅動機構24故障等情況時,即使由大氣壓所形成的壓力是作用在載置台16的背面,於此情形時,由於是使伸縮軟管13朝向收縮方向動作,所以相較於伸長方向,為安全之狀態,而不會有造成伸縮軟管13斷裂之情形。
本發明,是非常適用在半導體裝置之製造時所使用的電漿CVD裝置或電漿蝕刻裝置等之電漿處理裝置,不過只要是在真空容器內的驅動部分使用伸縮軟管,並且相對於伸縮軟管是在真空容器內使用具有腐蝕性氣體之裝置的話,則不限於半導體裝置之製造,對於製造其他物品者之裝置亦能夠適用。
10...電漿CVD裝置
11...真空處理室
11a...底部
11b...開口部
12...內筒
12a...下部凸緣
13...伸縮軟管
13a...上部凸緣
13b...下部凸緣
14...外筒
14a...上部凸緣
15...包覆構件
15a...上端部
16...載置台
17...基板
18...裙部構件
20...閘門
21...支撐筒
22...驅動板
23...滾珠螺桿
24...驅動機構
第1圖是顯示本發明之基板支撐台之構造之實施形態之一例的斷面圖,圖示出在電漿CVD裝置中,移動至下方位置的基板支撐台。
第2圖是顯示本發明之基板支撐台之構造之實施形態之一例的斷面圖,圖示出在電漿CVD裝置中,移動至上方位置的基板支撐台。
第3圖是以往之電漿處理裝置的斷面圖。
10...電漿CVD裝置
11...真空處理室
11a...底部
11b...開口部
12...內筒
12a...下部凸緣
13...伸縮軟管
13a...上部凸緣
13b...下部凸緣
14...外筒
14a...上部凸緣
15...包覆構件
15a...上端部
16...載置台
17...基板
18...裙部構件
20...閘門
21...支撐筒
22...驅動板
23...滾珠螺桿
24...驅動機構
Claims (6)
- 一種基板支撐台的構造,為在真空容器內使用腐蝕性氣體之處理裝置所使用,並具備有驅動機構用來改變處理對象之基板之位置的基板支撐台的構造,其特徵為:具有圓筒狀的內筒、伸縮軟管、圓筒狀的外筒、圓盤狀的載置台、包覆構件、以及驅動構件,該內筒,是中介第1密封構件,使其一端側安裝於上述真空容器之內壁之開口部的周圍;該伸縮軟管,是被配置於上述內筒的外周側,並且中介第2密封構件,使其一端側安裝於上述內筒的另一端側;該外筒,是被配置於上述伸縮軟管的外周側,並且中介第3密封構件,使其一端側安裝於上述伸縮軟管的另一端側;該載置台,是用以載置上述基板,並中介第4密封構件,以將上述外筒之另一端側的開口部予以閉塞之方式進行安裝;該包覆構件,是由具有耐腐蝕性之材料所形成,並以包覆上述外筒整面之方式與上述外筒緊密貼接地設置;該驅動構件,是通過上述開口部及上述內筒的內部,安裝於上述載置台的背面,並藉由上述驅動機構所驅動。
- 一種基板支撐台的構造,為在真空容器內使用腐蝕性氣體之處理裝置所使用,並具備有驅動機構用來改變處理對象之基板之位置的基板支撐台的構造,其特徵為:具有圓筒狀的內筒、伸縮軟管、圓筒狀的外筒、圓盤狀的載置台、圓筒狀的包覆構件、以及驅動構件,該內筒,是中介第1密封構件,使其下端側安裝於上述真空容器之底部之開口部的周圍;該伸縮軟管,是被配置於上述內筒的外周側,並且中介第2密封構件,使其上端側安裝於上述內筒的上端側;該外筒,是被配置於上述伸縮軟管的外周側,並且中介第3密封構件,使其下端側安裝於上述伸縮軟管的下端側;該載置台,是用以載置上述基板,並中介第4密封構件,以將上述外筒之上端側的開口部予以閉塞之方式進行安裝;該包覆構件,是由具有耐腐蝕性之材料所形成,並以包覆上述外筒整面之方式與上述外筒緊密貼接地設置;該驅動構件,是通過上述開口部及上述內筒的內部,安裝於上述載置台的背面,並藉由上述驅動機構所驅動。
- 如申請專利範圍第1或2項所述之基板支撐台的構造,其中,熔著至少以下其中一方:將上述內筒與上述伸縮軟管之間予以熔著以取代上述第2密封構件,和將上述伸縮軟管與上述外筒之間予以熔著以取代上述第3密封構件。
- 如申請專利範圍第1或2項所述之基板支撐台的構造,其中,更進一步地,將由具有耐腐蝕性材料所形成之圓筒狀的外部構裝構件,以覆蓋於上述包覆構件整面之方式設置於上述包覆構件的外周側。
- 如申請專利範圍第1或2項所述之基板支撐台的構造,其中上述處理裝置為電漿處理裝置。
- 一種電漿處理裝置,其特徵為:具有申請專利範圍第1或2項所述之基板支撐台的構造。
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JP2005056994A (ja) * | 2003-08-01 | 2005-03-03 | Saginomiya Seisakusho Inc | プラズマ処理装置 |
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JPS63153263A (ja) * | 1986-12-17 | 1988-06-25 | Mitsubishi Electric Corp | 真空処理装置 |
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US6287435B1 (en) * | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
JP2002151473A (ja) * | 2000-11-13 | 2002-05-24 | Tokyo Electron Ltd | プラズマ処理装置及びその組立方法 |
US20020148565A1 (en) * | 2001-04-12 | 2002-10-17 | Applied Materials, Inc. | Mushroom stem wafer pedestal for improved conductance and uniformity |
JP4209618B2 (ja) | 2002-02-05 | 2009-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びリング部材 |
JP4056855B2 (ja) | 2002-01-22 | 2008-03-05 | 東京エレクトロン株式会社 | 表面処理装置 |
WO2003067636A1 (fr) * | 2002-01-22 | 2003-08-14 | Tokyo Electron Limited | Dispositif et procede de traitement de surface |
US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US7789963B2 (en) * | 2005-02-25 | 2010-09-07 | Tokyo Electron Limited | Chuck pedestal shield |
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2009
- 2009-05-29 JP JP2009129842A patent/JP5398358B2/ja not_active Expired - Fee Related
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2010
- 2010-05-24 KR KR1020117028277A patent/KR101367473B1/ko not_active IP Right Cessation
- 2010-05-24 US US13/319,906 patent/US20120111502A1/en not_active Abandoned
- 2010-05-24 WO PCT/JP2010/058731 patent/WO2010137553A1/ja active Application Filing
- 2010-05-24 EP EP10780508A patent/EP2436802A1/en not_active Withdrawn
- 2010-05-27 TW TW099117023A patent/TWI463596B/zh not_active IP Right Cessation
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US5447595A (en) * | 1992-02-20 | 1995-09-05 | Matsushita Electronics Corporation | Electrodes for plasma etching apparatus and plasma etching apparatus using the same |
US5772833A (en) * | 1993-11-20 | 1998-06-30 | Tokyo Electron Limited | Plasma etching apparatus |
US6490994B1 (en) * | 1999-06-22 | 2002-12-10 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
US6673196B1 (en) * | 1999-09-02 | 2004-01-06 | Tokyo Electron Limited | Plasma processing apparatus |
JP2005056994A (ja) * | 2003-08-01 | 2005-03-03 | Saginomiya Seisakusho Inc | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
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KR20120014182A (ko) | 2012-02-16 |
TW201130078A (en) | 2011-09-01 |
US20120111502A1 (en) | 2012-05-10 |
WO2010137553A1 (ja) | 2010-12-02 |
JP2010275593A (ja) | 2010-12-09 |
EP2436802A1 (en) | 2012-04-04 |
KR101367473B1 (ko) | 2014-02-25 |
JP5398358B2 (ja) | 2014-01-29 |
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