TWI462178B - 用以改善銅與阻隔層間之黏接的自組裝單層膜 - Google Patents

用以改善銅與阻隔層間之黏接的自組裝單層膜 Download PDF

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Publication number
TWI462178B
TWI462178B TW096131991A TW96131991A TWI462178B TW I462178 B TWI462178 B TW I462178B TW 096131991 A TW096131991 A TW 096131991A TW 96131991 A TW96131991 A TW 96131991A TW I462178 B TWI462178 B TW I462178B
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TW
Taiwan
Prior art keywords
layer
copper
barrier layer
metal
depositing
Prior art date
Application number
TW096131991A
Other languages
English (en)
Chinese (zh)
Other versions
TW200834726A (en
Inventor
那拉 普文
尤 威廉
柏依 約翰
阿瑞那吉拉 第瑞區若巴里
亞歷山得 優 楊格蘇克
瑞德克 佛禮茲Ｃ
多迪 葉斯帝
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW200834726A publication Critical patent/TW200834726A/zh
Application granted granted Critical
Publication of TWI462178B publication Critical patent/TWI462178B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW096131991A 2006-08-30 2007-08-29 用以改善銅與阻隔層間之黏接的自組裝單層膜 TWI462178B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition
US11/639,012 US20090304914A1 (en) 2006-08-30 2006-12-13 Self assembled monolayer for improving adhesion between copper and barrier layer

Publications (2)

Publication Number Publication Date
TW200834726A TW200834726A (en) 2008-08-16
TWI462178B true TWI462178B (zh) 2014-11-21

Family

ID=39136454

Family Applications (2)

Application Number Title Priority Date Filing Date
TW096131991A TWI462178B (zh) 2006-08-30 2007-08-29 用以改善銅與阻隔層間之黏接的自組裝單層膜
TW101121357A TWI453822B (zh) 2006-08-30 2007-08-29 用以改善銅與阻隔層間之黏接的自組裝單層膜

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101121357A TWI453822B (zh) 2006-08-30 2007-08-29 用以改善銅與阻隔層間之黏接的自組裝單層膜

Country Status (7)

Country Link
US (1) US20090304914A1 (https=)
JP (1) JP5420409B2 (https=)
KR (1) KR101423349B1 (https=)
MY (1) MY162187A (https=)
SG (1) SG174105A1 (https=)
TW (2) TWI462178B (https=)
WO (1) WO2008027205A2 (https=)

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JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
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US8415252B2 (en) * 2010-01-07 2013-04-09 International Business Machines Corporation Selective copper encapsulation layer deposition
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US9799593B1 (en) * 2016-04-01 2017-10-24 Intel Corporation Semiconductor package substrate having an interfacial layer
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KR101819825B1 (ko) * 2016-06-13 2018-01-18 아주대학교산학협력단 플렉시블 전극 제조방법
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US10163695B1 (en) * 2017-06-27 2018-12-25 Lam Research Corporation Self-forming barrier process
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JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
CN110952081B (zh) * 2018-09-27 2022-04-29 Imec 非营利协会 用于形成互连部的方法和溶液
KR20210081436A (ko) 2018-11-19 2021-07-01 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
WO2020131897A1 (en) * 2018-12-17 2020-06-25 Averatek Corporation Three dimensional circuit formation
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CN114667600A (zh) 2019-10-15 2022-06-24 朗姆研究公司 钼填充
DE102020119831B4 (de) 2020-01-29 2024-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren und Struktur
US11929327B2 (en) 2020-01-29 2024-03-12 Taiwan Semiconductor Manufacturing Co., Inc. Liner-free conductive structures with anchor points
CN115943487A (zh) * 2020-11-19 2023-04-07 朗姆研究公司 低电阻率触点和互连件
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
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Also Published As

Publication number Publication date
US20090304914A1 (en) 2009-12-10
SG174105A1 (en) 2011-09-29
KR20090045302A (ko) 2009-05-07
TW201246376A (en) 2012-11-16
WO2008027205A2 (en) 2008-03-06
JP5420409B2 (ja) 2014-02-19
WO2008027205A3 (en) 2008-04-24
MY162187A (en) 2017-05-31
TW200834726A (en) 2008-08-16
KR101423349B1 (ko) 2014-07-24
TWI453822B (zh) 2014-09-21
JP2010503203A (ja) 2010-01-28

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