TWI458102B - 具有多浮閘的溝渠ｍｏｓ阻障肖特基體 - Google Patents

具有多浮閘的溝渠ｍｏｓ阻障肖特基體 Download PDF

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Publication number
TWI458102B
TWI458102B TW101103247A TW101103247A TWI458102B TW I458102 B TWI458102 B TW I458102B TW 101103247 A TW101103247 A TW 101103247A TW 101103247 A TW101103247 A TW 101103247A TW I458102 B TWI458102 B TW I458102B
Authority
TW
Taiwan
Prior art keywords
layer
epitaxial layer
substrate
conductive
floating gates
Prior art date
Application number
TW101103247A
Other languages
English (en)
Chinese (zh)
Other versions
TW201251032A (en
Inventor
高隆慶
Original Assignee
微協通用半導體有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 微協通用半導體有限責任公司 filed Critical 微協通用半導體有限責任公司
Publication of TW201251032A publication Critical patent/TW201251032A/zh
Application granted granted Critical
Publication of TWI458102B publication Critical patent/TWI458102B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
TW101103247A 2011-02-04 2012-02-01 具有多浮閘的溝渠ｍｏｓ阻障肖特基體 TWI458102B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/021,078 US8461646B2 (en) 2011-02-04 2011-02-04 Trench MOS barrier schottky (TMBS) having multiple floating gates

Publications (2)

Publication Number Publication Date
TW201251032A TW201251032A (en) 2012-12-16
TWI458102B true TWI458102B (zh) 2014-10-21

Family

ID=46600075

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101103247A TWI458102B (zh) 2011-02-04 2012-02-01 具有多浮閘的溝渠ｍｏｓ阻障肖特基體

Country Status (7)

Country Link
US (1) US8461646B2 (enExample)
EP (1) EP2671254B1 (enExample)
JP (1) JP6352635B2 (enExample)
KR (1) KR101857022B1 (enExample)
CN (1) CN103403870A (enExample)
TW (1) TWI458102B (enExample)
WO (1) WO2012106572A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011087596A1 (de) * 2011-12-01 2013-06-06 Robert Bosch Gmbh Super Trench Schottky Barrier Schottkydiode
CN105957884A (zh) * 2016-06-24 2016-09-21 上海格瑞宝电子有限公司 一种分栅栅极沟槽结构和沟槽肖特基二极管及其制备方法
US10770599B2 (en) 2016-09-03 2020-09-08 Champion Microelectronic Corp. Deep trench MOS barrier junction all around rectifier and MOSFET
CN108074986A (zh) * 2016-11-13 2018-05-25 朱江 一种电荷补偿肖特基半导体装置
TWI703736B (zh) * 2018-10-11 2020-09-01 朋程科技股份有限公司 車用整流裝置、整流器、發電裝置以及動力系統
US10797101B2 (en) * 2018-10-15 2020-10-06 Semiconductor Components Industries, Llc Time delay integration image sensors with non-destructive readout capabilities

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US7061066B2 (en) * 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7132712B2 (en) * 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US7713822B2 (en) * 2006-03-24 2010-05-11 Fairchild Semiconductor Corporation Method of forming high density trench FET with integrated Schottky diode

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US6621121B2 (en) 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US6252288B1 (en) 1999-01-19 2001-06-26 Rockwell Science Center, Llc High power trench-based rectifier with improved reverse breakdown characteristic
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
US7186609B2 (en) 1999-12-30 2007-03-06 Siliconix Incorporated Method of fabricating trench junction barrier rectifier
JP4528460B2 (ja) * 2000-06-30 2010-08-18 株式会社東芝 半導体素子
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6846729B2 (en) 2001-10-01 2005-01-25 International Rectifier Corporation Process for counter doping N-type silicon in Schottky device Ti silicide barrier
US6882573B2 (en) 2002-08-13 2005-04-19 General Semiconductor, Inc. DMOS device with a programmable threshold voltage
JP4099029B2 (ja) * 2002-10-16 2008-06-11 株式会社豊田中央研究所 トレンチゲート型半導体装置
FR2850791B1 (fr) * 2003-01-30 2006-01-20 St Microelectronics Sa Composant unipolaire vertical
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6998694B2 (en) 2003-08-05 2006-02-14 Shye-Lin Wu High switching speed two mask Schottky diode with high field breakdown
US20050199918A1 (en) 2004-03-15 2005-09-15 Daniel Calafut Optimized trench power MOSFET with integrated schottky diode
US7268395B2 (en) * 2004-06-04 2007-09-11 International Rectifier Corporation Deep trench super switch device
JP2006237066A (ja) * 2005-02-22 2006-09-07 Toshiba Corp 半導体装置
WO2006127914A2 (en) * 2005-05-26 2006-11-30 Fairchild Semiconductor Corporation Trench-gate field effect transistors and methods of forming the same
KR100881015B1 (ko) * 2006-11-30 2009-01-30 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
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JP5195357B2 (ja) * 2008-12-01 2013-05-08 トヨタ自動車株式会社 半導体装置
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8653589B2 (en) * 2009-04-15 2014-02-18 Force Mos Technology Co., Ltd. Low Qgd trench MOSFET integrated with schottky rectifier
JP5525940B2 (ja) * 2009-07-21 2014-06-18 ローム株式会社 半導体装置および半導体装置の製造方法
US7952141B2 (en) * 2009-07-24 2011-05-31 Fairchild Semiconductor Corporation Shield contacts in a shielded gate MOSFET
US7989887B2 (en) * 2009-11-20 2011-08-02 Force Mos Technology Co., Ltd. Trench MOSFET with trenched floating gates as termination

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455187A (en) * 1988-11-21 1995-10-03 Micro Technology Partners Method of making a semiconductor device with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
US7061066B2 (en) * 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7132712B2 (en) * 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US7713822B2 (en) * 2006-03-24 2010-05-11 Fairchild Semiconductor Corporation Method of forming high density trench FET with integrated Schottky diode

Also Published As

Publication number Publication date
EP2671254A4 (en) 2014-05-14
TW201251032A (en) 2012-12-16
EP2671254A1 (en) 2013-12-11
JP6352635B2 (ja) 2018-07-04
US20120199902A1 (en) 2012-08-09
US8461646B2 (en) 2013-06-11
KR20140057475A (ko) 2014-05-13
CN103403870A (zh) 2013-11-20
KR101857022B1 (ko) 2018-06-20
WO2012106572A1 (en) 2012-08-09
JP2014508407A (ja) 2014-04-03
EP2671254B1 (en) 2016-04-20

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