JP2014508407A - 複数のフローティングゲートを有するトレンチmosバリアショットキー(tmbs) - Google Patents
複数のフローティングゲートを有するトレンチmosバリアショットキー(tmbs) Download PDFInfo
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- JP2014508407A JP2014508407A JP2013552664A JP2013552664A JP2014508407A JP 2014508407 A JP2014508407 A JP 2014508407A JP 2013552664 A JP2013552664 A JP 2013552664A JP 2013552664 A JP2013552664 A JP 2013552664A JP 2014508407 A JP2014508407 A JP 2014508407A
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- 230000004888 barrier function Effects 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 13
- 230000000903 blocking effect Effects 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
100B 半導体基板
101 酸化物層
110 トレンチ
115 メサ
125 絶縁層
127 絶縁層、誘電体層
140 導電層
160 金属層(導電層)
165 アノード金属(ダイオードアノード電極)
170 カソード電極
Claims (14)
- 第1の導電型を有する半導体基板と、
前記第1の導電型を有する基板上に形成され、前記基板より更に低濃度にドープされているエピタキシャル層と、
前記エピタキシャル層に形成される複数のフローティングゲートと、
前記エピタキシャル層上に配置される金属層であって、それらの間でショットキー接触を形成する、金属層と、
前記金属層上に形成される第1電極、及び前記基板の裏側に形成される第2電極と、
を含む、半導体整流器。 - 前記複数のフローティングゲートが、前記エピタキシャル層に形成される少なくとも1つのトレンチに配置される、請求項1に記載の半導体整流器。
- 前記トレンチの底部及び側壁をライニングする絶縁層をさらに含む、請求項2に記載の半導体整流器。
- トレンチに配置される複数の誘電体層をさらに含み、前記複数のフローティングゲートが、隣接する誘電体層の間にそれぞれ挿入される複数の導電層を含む、請求項1に記載の半導体整流器。
- 前記複数の導電層は、複数のAl層である、請求項4に記載の半導体整流器。
- 前記複数の導電層は、複数のドープされたポリシリコン層である、請求項4に記載の半導体整流器。
- 前記金属層がニッケルであり、前記エピタキシャル層はシリコンを含み、シリサイド層が前記ニッケルとエピタキシャル層との間の界面に形成される、請求項1に記載の半導体整流器。
- 第1の導電型の半導体ボディーを提供する段階と、
前記半導体ボディーの表面に複数のトレンチをエッチングし、メサが隣接するトレンチの間に残存するようにし、前記トレンチのそれぞれが側壁及び底部を有する、段階と、
前記トレンチのそれぞれに複数のフローティングゲートを形成する段階と、
前記メサの表面に金属層を形成し、それとともにショットキー接触が形成される、段階と、
を含む、整流器を製作する方法。 - 前記半導体ボディーは、第1の導電型を有する半導体基板と、前記第1の導電型を有する基板上に形成され、前記基板より更に低濃度にドープされているエピタキシャル層と、を含む、請求項8に記載の方法。
- 前記トレンチのそれぞれに複数のフローティングゲートを形成する段階が、前記トレンチのそれぞれにおいて誘電材料及び導電材料の複数の交互層を形成する段階を含む、請求項8に記載の方法。
- 前記複数の交互層のそれぞれを形成する段階が、前記誘電材料または導電材料を堆積及びエッチバックする段階を含む、請求項10に記載の方法。
- 前記導電材料はAlである、請求項10に記載の方法。
- 前記導電材料はドープされたポリシリコンである、請求項10に記載の方法。
- 前記金属層はニッケルであり、エピタキシャル層はシリコンを含み、前記ニッケルとエピタキシャル層との間の界面にシリサイド層が形成される、請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/021,078 | 2011-02-04 | ||
US13/021,078 US8461646B2 (en) | 2011-02-04 | 2011-02-04 | Trench MOS barrier schottky (TMBS) having multiple floating gates |
PCT/US2012/023724 WO2012106572A1 (en) | 2011-02-04 | 2012-02-03 | Trench mos barrier schottky (tmbs) having multiple floating gates |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014508407A true JP2014508407A (ja) | 2014-04-03 |
JP2014508407A5 JP2014508407A5 (ja) | 2015-03-26 |
JP6352635B2 JP6352635B2 (ja) | 2018-07-04 |
Family
ID=46600075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013552664A Active JP6352635B2 (ja) | 2011-02-04 | 2012-02-03 | 複数のフローティングゲートを有するトレンチmosバリアショットキー(tmbs) |
Country Status (7)
Country | Link |
---|---|
US (1) | US8461646B2 (ja) |
EP (1) | EP2671254B1 (ja) |
JP (1) | JP6352635B2 (ja) |
KR (1) | KR101857022B1 (ja) |
CN (1) | CN103403870A (ja) |
TW (1) | TWI458102B (ja) |
WO (1) | WO2012106572A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011087596A1 (de) * | 2011-12-01 | 2013-06-06 | Robert Bosch Gmbh | Super Trench Schottky Barrier Schottkydiode |
CN105957884A (zh) * | 2016-06-24 | 2016-09-21 | 上海格瑞宝电子有限公司 | 一种分栅栅极沟槽结构和沟槽肖特基二极管及其制备方法 |
US10770599B2 (en) | 2016-09-03 | 2020-09-08 | Champion Microelectronic Corp. | Deep trench MOS barrier junction all around rectifier and MOSFET |
CN108074986A (zh) * | 2016-11-13 | 2018-05-25 | 朱江 | 一种电荷补偿肖特基半导体装置 |
TWI703736B (zh) * | 2018-10-11 | 2020-09-01 | 朋程科技股份有限公司 | 車用整流裝置、整流器、發電裝置以及動力系統 |
US10797101B2 (en) * | 2018-10-15 | 2020-10-06 | Semiconductor Components Industries, Llc | Time delay integration image sensors with non-destructive readout capabilities |
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- 2012-02-03 EP EP12741674.1A patent/EP2671254B1/en active Active
- 2012-02-03 JP JP2013552664A patent/JP6352635B2/ja active Active
- 2012-02-03 WO PCT/US2012/023724 patent/WO2012106572A1/en active Application Filing
- 2012-02-03 CN CN2012800076724A patent/CN103403870A/zh active Pending
- 2012-02-03 KR KR1020137023370A patent/KR101857022B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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EP2671254B1 (en) | 2016-04-20 |
TW201251032A (en) | 2012-12-16 |
TWI458102B (zh) | 2014-10-21 |
KR20140057475A (ko) | 2014-05-13 |
EP2671254A4 (en) | 2014-05-14 |
KR101857022B1 (ko) | 2018-06-20 |
WO2012106572A1 (en) | 2012-08-09 |
US20120199902A1 (en) | 2012-08-09 |
US8461646B2 (en) | 2013-06-11 |
JP6352635B2 (ja) | 2018-07-04 |
EP2671254A1 (en) | 2013-12-11 |
CN103403870A (zh) | 2013-11-20 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |