CN103403870A - 具有多个浮栅的沟槽型mos势垒肖特基(tmbs) - Google Patents

具有多个浮栅的沟槽型mos势垒肖特基(tmbs) Download PDF

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Publication number
CN103403870A
CN103403870A CN2012800076724A CN201280007672A CN103403870A CN 103403870 A CN103403870 A CN 103403870A CN 2012800076724 A CN2012800076724 A CN 2012800076724A CN 201280007672 A CN201280007672 A CN 201280007672A CN 103403870 A CN103403870 A CN 103403870A
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CN
China
Prior art keywords
epitaxial loayer
substrate
layer
semiconductor
semiconductor substrate
Prior art date
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Pending
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CN2012800076724A
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English (en)
Chinese (zh)
Inventor
高隆庆
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Vishay General Semiconductor LLC
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Vishay General Semiconductor LLC
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Publication date
Application filed by Vishay General Semiconductor LLC filed Critical Vishay General Semiconductor LLC
Publication of CN103403870A publication Critical patent/CN103403870A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

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  • Electrodes Of Semiconductors (AREA)
CN2012800076724A 2011-02-04 2012-02-03 具有多个浮栅的沟槽型mos势垒肖特基(tmbs) Pending CN103403870A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/021,078 2011-02-04
US13/021,078 US8461646B2 (en) 2011-02-04 2011-02-04 Trench MOS barrier schottky (TMBS) having multiple floating gates
PCT/US2012/023724 WO2012106572A1 (en) 2011-02-04 2012-02-03 Trench mos barrier schottky (tmbs) having multiple floating gates

Publications (1)

Publication Number Publication Date
CN103403870A true CN103403870A (zh) 2013-11-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012800076724A Pending CN103403870A (zh) 2011-02-04 2012-02-03 具有多个浮栅的沟槽型mos势垒肖特基(tmbs)

Country Status (7)

Country Link
US (1) US8461646B2 (enExample)
EP (1) EP2671254B1 (enExample)
JP (1) JP6352635B2 (enExample)
KR (1) KR101857022B1 (enExample)
CN (1) CN103403870A (enExample)
TW (1) TWI458102B (enExample)
WO (1) WO2012106572A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957884A (zh) * 2016-06-24 2016-09-21 上海格瑞宝电子有限公司 一种分栅栅极沟槽结构和沟槽肖特基二极管及其制备方法
CN108074986A (zh) * 2016-11-13 2018-05-25 朱江 一种电荷补偿肖特基半导体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011087596A1 (de) * 2011-12-01 2013-06-06 Robert Bosch Gmbh Super Trench Schottky Barrier Schottkydiode
US10770599B2 (en) 2016-09-03 2020-09-08 Champion Microelectronic Corp. Deep trench MOS barrier junction all around rectifier and MOSFET
TWI703736B (zh) * 2018-10-11 2020-09-01 朋程科技股份有限公司 車用整流裝置、整流器、發電裝置以及動力系統
US10797101B2 (en) * 2018-10-15 2020-10-06 Semiconductor Components Industries, Llc Time delay integration image sensors with non-destructive readout capabilities

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US20060205196A1 (en) * 2003-01-30 2006-09-14 Stmicroelectronics S.A. Vertical unipolar component
WO2006127914A2 (en) * 2005-05-26 2006-11-30 Fairchild Semiconductor Corporation Trench-gate field effect transistors and methods of forming the same
US20100320534A1 (en) * 2008-06-20 2010-12-23 James Pan Structure and Method for Forming a Thick Bottom Dielectric (TBD) for Trench-Gate Devices

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US6621121B2 (en) 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US6252288B1 (en) 1999-01-19 2001-06-26 Rockwell Science Center, Llc High power trench-based rectifier with improved reverse breakdown characteristic
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
US7186609B2 (en) 1999-12-30 2007-03-06 Siliconix Incorporated Method of fabricating trench junction barrier rectifier
JP4528460B2 (ja) * 2000-06-30 2010-08-18 株式会社東芝 半導体素子
US7132712B2 (en) * 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
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JP4099029B2 (ja) * 2002-10-16 2008-06-11 株式会社豊田中央研究所 トレンチゲート型半導体装置
US7652326B2 (en) * 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
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US7268395B2 (en) * 2004-06-04 2007-09-11 International Rectifier Corporation Deep trench super switch device
JP2006237066A (ja) * 2005-02-22 2006-09-07 Toshiba Corp 半導体装置
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KR100881015B1 (ko) * 2006-11-30 2009-01-30 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
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US8653589B2 (en) * 2009-04-15 2014-02-18 Force Mos Technology Co., Ltd. Low Qgd trench MOSFET integrated with schottky rectifier
JP5525940B2 (ja) * 2009-07-21 2014-06-18 ローム株式会社 半導体装置および半導体装置の製造方法
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040256690A1 (en) * 2001-10-17 2004-12-23 Kocon Christopher Boguslaw Schottky diode using charge balance structure
US20060205196A1 (en) * 2003-01-30 2006-09-14 Stmicroelectronics S.A. Vertical unipolar component
WO2006127914A2 (en) * 2005-05-26 2006-11-30 Fairchild Semiconductor Corporation Trench-gate field effect transistors and methods of forming the same
US20100320534A1 (en) * 2008-06-20 2010-12-23 James Pan Structure and Method for Forming a Thick Bottom Dielectric (TBD) for Trench-Gate Devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957884A (zh) * 2016-06-24 2016-09-21 上海格瑞宝电子有限公司 一种分栅栅极沟槽结构和沟槽肖特基二极管及其制备方法
CN108074986A (zh) * 2016-11-13 2018-05-25 朱江 一种电荷补偿肖特基半导体装置

Also Published As

Publication number Publication date
JP6352635B2 (ja) 2018-07-04
JP2014508407A (ja) 2014-04-03
WO2012106572A1 (en) 2012-08-09
KR20140057475A (ko) 2014-05-13
TW201251032A (en) 2012-12-16
EP2671254B1 (en) 2016-04-20
EP2671254A4 (en) 2014-05-14
US8461646B2 (en) 2013-06-11
US20120199902A1 (en) 2012-08-09
KR101857022B1 (ko) 2018-06-20
TWI458102B (zh) 2014-10-21
EP2671254A1 (en) 2013-12-11

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