TWI453817B - 利用導熱性密合墊及ｏ形環之電極組件與電漿處理室 - Google Patents
利用導熱性密合墊及ｏ形環之電極組件與電漿處理室 Download PDFInfo
- Publication number
- TWI453817B TWI453817B TW097121772A TW97121772A TWI453817B TW I453817 B TWI453817 B TW I453817B TW 097121772 A TW097121772 A TW 097121772A TW 97121772 A TW97121772 A TW 97121772A TW I453817 B TWI453817 B TW I453817B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- thermal control
- thermally conductive
- back side
- front side
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 35
- 239000000853 adhesive Substances 0.000 claims description 48
- 230000001070 adhesive effect Effects 0.000 claims description 48
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 32
- 229910052707 ruthenium Inorganic materials 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 27
- 206010036790 Productive cough Diseases 0.000 claims description 16
- 210000003802 sputum Anatomy 0.000 claims description 16
- 208000024794 sputum Diseases 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 2
- 239000002041 carbon nanotube Substances 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 3
- 239000005864 Sulphur Substances 0.000 claims 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 3
- 238000005299 abrasion Methods 0.000 claims 2
- 229910021392 nanocarbon Inorganic materials 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 19
- 239000007772 electrode material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92910707P | 2007-06-13 | 2007-06-13 | |
| US12/112,112 US8216418B2 (en) | 2007-06-13 | 2008-04-30 | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200917359A TW200917359A (en) | 2009-04-16 |
| TWI453817B true TWI453817B (zh) | 2014-09-21 |
Family
ID=40131235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097121772A TWI453817B (zh) | 2007-06-13 | 2008-06-11 | 利用導熱性密合墊及ｏ形環之電極組件與電漿處理室 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8216418B2 (enExample) |
| JP (1) | JP5341073B2 (enExample) |
| KR (1) | KR101541201B1 (enExample) |
| CN (1) | CN101715605B (enExample) |
| TW (1) | TWI453817B (enExample) |
| WO (1) | WO2008156958A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI892884B (zh) * | 2023-12-27 | 2025-08-01 | 大陸商中微半導體設備（上海）股份有限公司 | 電漿處理設備、上電極組件及其裝配方法 |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7862682B2 (en) * | 2007-06-13 | 2011-01-04 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
| US8216418B2 (en) | 2007-06-13 | 2012-07-10 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
| US8187414B2 (en) * | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
| US8187413B2 (en) * | 2008-03-18 | 2012-05-29 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket |
| US8679288B2 (en) | 2008-06-09 | 2014-03-25 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
| US8221582B2 (en) * | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| US8206506B2 (en) | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
| US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8147648B2 (en) * | 2008-08-15 | 2012-04-03 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
| US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
| US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
| SG169960A1 (en) | 2009-09-18 | 2011-04-29 | Lam Res Corp | Clamped monolithic showerhead electrode |
| JP3160877U (ja) | 2009-10-13 | 2010-07-15 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極 |
| US8274756B2 (en) * | 2009-12-15 | 2012-09-25 | HGST Netherlands B.V. | Use of carbon nanotubes to form conductive gaskets deployed in sensitive environments |
| US8529729B2 (en) | 2010-06-07 | 2013-09-10 | Lam Research Corporation | Plasma processing chamber component having adaptive thermal conductor |
| US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
| US8470127B2 (en) | 2011-01-06 | 2013-06-25 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
| JP2013254901A (ja) * | 2012-06-08 | 2013-12-19 | Toshiba Corp | シール材およびエッチング装置 |
| US9314854B2 (en) | 2013-01-30 | 2016-04-19 | Lam Research Corporation | Ductile mode drilling methods for brittle components of plasma processing apparatuses |
| US8893702B2 (en) | 2013-02-20 | 2014-11-25 | Lam Research Corporation | Ductile mode machining methods for hard and brittle components of plasma processing apparatuses |
| KR101560623B1 (ko) * | 2014-01-03 | 2015-10-15 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
| US9911579B2 (en) | 2014-07-03 | 2018-03-06 | Applied Materials, Inc. | Showerhead having a detachable high resistivity gas distribution plate |
| FR3061914B1 (fr) * | 2017-01-16 | 2019-05-31 | Kobus Sas | Chambre de traitement pour un reacteur de depot chimique en phase vapeur (cvd) et procede de thermalisation mis en œuvre dans cette chambre |
| TWI815813B (zh) * | 2017-08-04 | 2023-09-21 | 荷蘭商Ａｓｍ智慧財產控股公司 | 用於分配反應腔內氣體的噴頭總成 |
| US10811232B2 (en) * | 2017-08-08 | 2020-10-20 | Applied Materials, Inc. | Multi-plate faceplate for a processing chamber |
| US10889894B2 (en) * | 2018-08-06 | 2021-01-12 | Applied Materials, Inc. | Faceplate with embedded heater |
| CN110942969B (zh) * | 2018-09-21 | 2022-08-23 | 中微半导体设备(上海)股份有限公司 | 一种气体喷淋头组件及其等离子体处理设备 |
| JP7097284B2 (ja) * | 2018-12-06 | 2022-07-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR102198929B1 (ko) * | 2019-02-28 | 2021-01-06 | 세메스 주식회사 | 기판 처리 장치의 가스 공급 유닛 |
| CN112837985B (zh) * | 2019-11-22 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | 上电极组件以及等离子体处理设备 |
| JP7583663B2 (ja) | 2021-04-01 | 2024-11-14 | 東京エレクトロン株式会社 | 上部電極アセンブリ |
| US20250054778A1 (en) * | 2021-12-15 | 2025-02-13 | Lam Research Corporation | Improved thermal and electrical interface between parts in an etch chamber |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133160A1 (en) * | 2003-12-23 | 2005-06-23 | Kennedy William S. | Showerhead electrode assembly for plasma processing apparatuses |
| CN1231945C (zh) * | 1999-12-22 | 2005-12-14 | 兰姆研究公司 | 改进等离子体处理室中的颗粒污染和处理偏差的方法及设备 |
| TW200614880A (en) * | 2004-09-08 | 2006-05-01 | Advanced Display Proc Eng Co | Plasma processing apparatus |
| US20060253942A1 (en) * | 2003-01-23 | 2006-11-09 | William Marsh Rice University | Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices |
Family Cites Families (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3783173A (en) * | 1972-05-19 | 1974-01-01 | Us Army | Gasket-electrically conductive |
| US4654754A (en) * | 1982-11-02 | 1987-03-31 | Fairchild Weston Systems, Inc. | Thermal link |
| US4595484A (en) * | 1985-12-02 | 1986-06-17 | International Business Machines Corporation | Reactive ion etching apparatus |
| US4782893A (en) * | 1986-09-15 | 1988-11-08 | Trique Concepts, Inc. | Electrically insulating thermally conductive pad for mounting electronic components |
| US4960488A (en) * | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
| US4820371A (en) * | 1987-12-15 | 1989-04-11 | Texas Instruments Incorporated | Apertured ring for exhausting plasma reactor gases |
| US4792378A (en) * | 1987-12-15 | 1988-12-20 | Texas Instruments Incorporated | Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor |
| US4913696A (en) * | 1987-12-21 | 1990-04-03 | E. I. Du Pont De Nemours And Company | Support arrangement for a temperature sensor |
| US6063233A (en) * | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| DE69328687D1 (de) * | 1993-07-06 | 2000-06-21 | Toshiba Kawasaki Kk | Wärmeleitende platte |
| CA2129073C (en) * | 1993-09-10 | 2007-06-05 | John P. Kalinoski | Form-in-place emi gaskets |
| DE4339786C5 (de) * | 1993-11-18 | 2004-02-05 | Emi-Tec Elektronische Materialien Gmbh | Verfahren zur Herstellung einer Anordung zur Wärmeableitung |
| US5545473A (en) * | 1994-02-14 | 1996-08-13 | W. L. Gore & Associates, Inc. | Thermally conductive interface |
| JP3534940B2 (ja) * | 1995-04-20 | 2004-06-07 | 株式会社荏原製作所 | 薄膜気相成長装置 |
| US5569356A (en) * | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
| US5679457A (en) * | 1995-05-19 | 1997-10-21 | The Bergquist Company | Thermally conductive interface for electronic devices |
| US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
| US5932007A (en) * | 1996-06-04 | 1999-08-03 | General Signal Technology Corporation | Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system |
| JP3480271B2 (ja) * | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | 熱処理装置のシャワーヘッド構造 |
| US6096414A (en) * | 1997-11-25 | 2000-08-01 | Parker-Hannifin Corporation | High dielectric strength thermal interface material |
| US6106625A (en) * | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
| US6131646A (en) * | 1998-01-19 | 2000-10-17 | Trw Inc. | Heat conductive interface material |
| US6220607B1 (en) * | 1998-04-17 | 2001-04-24 | Applied Materials, Inc. | Thermally conductive conformal media |
| US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
| US6050216A (en) * | 1998-08-21 | 2000-04-18 | M.E.C. Technology, Inc. | Showerhead electrode for plasma processing |
| US6379491B1 (en) * | 1998-10-30 | 2002-04-30 | Promos Technologies, Inc. | Plasma chamber with erosion resistive securement screws |
| WO2000060658A1 (fr) * | 1999-04-06 | 2000-10-12 | Tokyo Electron Limited | Electrode, etage de tranche, dispositif a plasma, et procede de fabrication d'une electrode et d'un etage de tranche |
| US6165612A (en) * | 1999-05-14 | 2000-12-26 | The Bergquist Company | Thermally conductive interface layers |
| US6245192B1 (en) * | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6200415B1 (en) * | 1999-06-30 | 2001-03-13 | Lam Research Corporation | Load controlled rapid assembly clamp ring |
| US6123775A (en) * | 1999-06-30 | 2000-09-26 | Lam Research Corporation | Reaction chamber component having improved temperature uniformity |
| US6451157B1 (en) * | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6496373B1 (en) * | 1999-11-04 | 2002-12-17 | Amerasia International Technology, Inc. | Compressible thermally-conductive interface |
| US6343647B2 (en) * | 2000-01-11 | 2002-02-05 | Thermax International, Ll.C. | Thermal joint and method of use |
| US6477980B1 (en) * | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
| US6170432B1 (en) * | 2000-01-24 | 2001-01-09 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
| US6475933B1 (en) * | 2000-01-27 | 2002-11-05 | Northrop Grumman Corporation | Highly conductive elastomeric sheet |
| JP3990867B2 (ja) * | 2000-01-31 | 2007-10-17 | キヤノン株式会社 | 堆積膜形成装置および堆積膜形成方法 |
| KR100378871B1 (ko) * | 2000-02-16 | 2003-04-07 | 주식회사 아펙스 | 라디칼 증착을 위한 샤워헤드장치 |
| PT1264126E (pt) * | 2000-03-06 | 2008-01-10 | Interface Solutions Inc | Juntas de vedação com propriedades controladas de aderência à superfície de flanges |
| US7220937B2 (en) * | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
| JP2002093777A (ja) * | 2000-07-11 | 2002-03-29 | Nisshinbo Ind Inc | ドライエッチング装置 |
| US6412437B1 (en) * | 2000-08-18 | 2002-07-02 | Micron Technology, Inc. | Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process |
| US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
| US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
| US6651736B2 (en) * | 2001-06-28 | 2003-11-25 | Intel Corporation | Short carbon fiber enhanced thermal grease |
| US20030106644A1 (en) * | 2001-07-19 | 2003-06-12 | Sirkis Murray D. | Electrode apparatus and method for plasma processing |
| US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
| US6786175B2 (en) * | 2001-08-08 | 2004-09-07 | Lam Research Corporation | Showerhead electrode design for semiconductor processing reactor |
| JP4082720B2 (ja) * | 2001-09-10 | 2008-04-30 | キヤノンアネルバ株式会社 | 基板表面処理装置 |
| US20030047282A1 (en) * | 2001-09-10 | 2003-03-13 | Yasumi Sago | Surface processing apparatus |
| US6618249B2 (en) * | 2002-02-05 | 2003-09-09 | Quantum Corporation | Thermal cooling system for densely packed storage devices |
| JP4102873B2 (ja) * | 2002-03-29 | 2008-06-18 | 東京エレクトロン株式会社 | プラズマ処理装置用電極板及びプラズマ処理装置 |
| JP3868341B2 (ja) * | 2002-04-22 | 2007-01-17 | 日清紡績株式会社 | 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置 |
| US7208192B2 (en) * | 2002-05-31 | 2007-04-24 | Parker-Hannifin Corporation | Thermally or electrically-conductive form-in-place gap filter |
| JP3714924B2 (ja) * | 2002-07-11 | 2005-11-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7153388B2 (en) * | 2003-03-31 | 2006-12-26 | Lam Research Corporation | Chamber for high-pressure wafer processing and method for making the same |
| US7205050B2 (en) * | 2003-06-09 | 2007-04-17 | Permatex, Inc. | Low shear adhesion RTV silicone |
| JP2005019606A (ja) * | 2003-06-25 | 2005-01-20 | Anelva Corp | プラズマ処理装置におけるガスシャワーヘッドまたはターゲットプレートを電極に固定する装置 |
| US7137444B2 (en) * | 2003-09-08 | 2006-11-21 | Pacific Rubber & Packing, Inc. | Heat-transfer interface device between a source of heat and a heat-receiving object |
| IL160145A0 (en) * | 2004-01-29 | 2004-06-20 | Univ Ben Gurion | Method for the preparation of dispersions of carbon nanotubes |
| JP4404303B2 (ja) * | 2004-02-03 | 2010-01-27 | 株式会社アルバック | プラズマｃｖｄ装置及び成膜方法 |
| US6983892B2 (en) * | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
| US20060054280A1 (en) * | 2004-02-23 | 2006-03-16 | Jang Geun-Ha | Apparatus of manufacturing display substrate and showerhead assembly equipped therein |
| US8317968B2 (en) * | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
| US7712434B2 (en) | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
| US7708859B2 (en) * | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
| US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
| KR100628888B1 (ko) * | 2004-12-27 | 2006-09-26 | 삼성전자주식회사 | 샤워 헤드 온도 조절 장치 및 이를 갖는 막 형성 장치 |
| US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
| KR100745971B1 (ko) | 2005-04-08 | 2007-08-02 | 정경철 | 7개 규격의 시력교정용 핀홀렌즈 세트 |
| JP4506557B2 (ja) | 2005-05-18 | 2010-07-21 | 株式会社島津製作所 | シャワーヘッドおよび表面波励起プラズマ処理装置 |
| KR100629358B1 (ko) * | 2005-05-24 | 2006-10-02 | 삼성전자주식회사 | 샤워 헤드 |
| JP2007043147A (ja) * | 2005-07-29 | 2007-02-15 | Samsung Electronics Co Ltd | 原子層蒸着工程を用いたシリコンリッチナノクリスタル構造物の形成方法及びこれを用いた不揮発性半導体装置の製造方法 |
| US8679252B2 (en) * | 2005-09-23 | 2014-03-25 | Lam Research Corporation | Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof |
| JP4777790B2 (ja) | 2005-09-29 | 2011-09-21 | 東京エレクトロン株式会社 | プラズマ処理室用構造物、プラズマ処理室、及びプラズマ処理装置 |
| US8789493B2 (en) * | 2006-02-13 | 2014-07-29 | Lam Research Corporation | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
| US20080081114A1 (en) * | 2006-10-03 | 2008-04-03 | Novellus Systems, Inc. | Apparatus and method for delivering uniform fluid flow in a chemical deposition system |
| US7854820B2 (en) * | 2006-10-16 | 2010-12-21 | Lam Research Corporation | Upper electrode backing member with particle reducing features |
| JP2008103589A (ja) | 2006-10-20 | 2008-05-01 | Tokyo Cathode Laboratory Co Ltd | 半導体処理装置用シャワーヘッド及び半導体処理装置のシャワーヘッドに用いられる表側電極板 |
| US7806413B2 (en) * | 2006-11-08 | 2010-10-05 | Federal-Mogul Corporation | Static gasket |
| US8702866B2 (en) * | 2006-12-18 | 2014-04-22 | Lam Research Corporation | Showerhead electrode assembly with gas flow modification for extended electrode life |
| US7732728B2 (en) * | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| US8069817B2 (en) * | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
| US8216418B2 (en) | 2007-06-13 | 2012-07-10 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
| KR101519684B1 (ko) * | 2007-09-25 | 2015-05-12 | 램 리써치 코포레이션 | 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리를 위한 온도 제어 모듈 |
| US8152954B2 (en) * | 2007-10-12 | 2012-04-10 | Lam Research Corporation | Showerhead electrode assemblies and plasma processing chambers incorporating the same |
| TWI508129B (zh) * | 2007-10-31 | 2015-11-11 | Lam Res Corp | 利用氣體壓力來控制液體冷卻劑與構件體間之熱傳導的溫度控制模組 |
| JP5650547B2 (ja) * | 2008-03-14 | 2015-01-07 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | カムロック電極クランプ |
| US8187413B2 (en) * | 2008-03-18 | 2012-05-29 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket |
| US8679288B2 (en) * | 2008-06-09 | 2014-03-25 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
| US20100000684A1 (en) * | 2008-07-03 | 2010-01-07 | Jong Yong Choi | Dry etching apparatus |
| US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8221582B2 (en) * | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| US8147648B2 (en) * | 2008-08-15 | 2012-04-03 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
| US8449679B2 (en) * | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
| US8272346B2 (en) * | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
-
2008
- 2008-04-30 US US12/112,112 patent/US8216418B2/en active Active
- 2008-05-22 KR KR1020107000498A patent/KR101541201B1/ko active Active
- 2008-05-22 CN CN2008800201639A patent/CN101715605B/zh active Active
- 2008-05-22 WO PCT/US2008/064488 patent/WO2008156958A2/en not_active Ceased
- 2008-05-22 JP JP2010512243A patent/JP5341073B2/ja active Active
- 2008-06-11 TW TW097121772A patent/TWI453817B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1231945C (zh) * | 1999-12-22 | 2005-12-14 | 兰姆研究公司 | 改进等离子体处理室中的颗粒污染和处理偏差的方法及设备 |
| US20060253942A1 (en) * | 2003-01-23 | 2006-11-09 | William Marsh Rice University | Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices |
| US20050133160A1 (en) * | 2003-12-23 | 2005-06-23 | Kennedy William S. | Showerhead electrode assembly for plasma processing apparatuses |
| TW200614880A (en) * | 2004-09-08 | 2006-05-01 | Advanced Display Proc Eng Co | Plasma processing apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI892884B (zh) * | 2023-12-27 | 2025-08-01 | 大陸商中微半導體設備（上海）股份有限公司 | 電漿處理設備、上電極組件及其裝配方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080308229A1 (en) | 2008-12-18 |
| JP2010529303A (ja) | 2010-08-26 |
| WO2008156958A3 (en) | 2009-02-19 |
| JP5341073B2 (ja) | 2013-11-13 |
| KR101541201B1 (ko) | 2015-07-31 |
| US8216418B2 (en) | 2012-07-10 |
| CN101715605B (zh) | 2011-11-23 |
| KR20100048991A (ko) | 2010-05-11 |
| WO2008156958A2 (en) | 2008-12-24 |
| TW200917359A (en) | 2009-04-16 |
| CN101715605A (zh) | 2010-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI453817B (zh) | 利用導熱性密合墊及ｏ形環之電極組件與電漿處理室 | |
| TWI412301B (zh) | 電極總成及使用導熱襯墊之電漿處理腔室 | |
| JP6689937B2 (ja) | 真空プロセス・チャンバの構成部品及び製造方法 | |
| KR101541202B1 (ko) | 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리 | |
| CN105177519B (zh) | 用于物理气相沉积腔室的沉积环及静电夹盘 | |
| TWI290589B (en) | Vacuum processing device | |
| TWI528492B (zh) | 具有減少的電弧作用之靜電夾盤 | |
| US9905402B2 (en) | Plasma processing chamber with a grounded electrode assembly | |
| EP0826229B1 (en) | Electrode clamping assembly and method for assembly and use thereof | |
| KR101057610B1 (ko) | 유전체 재료 식각 방법 | |
| JP2004524677A (ja) | プラズマ処理用電極及びその製造方法並びにその使用 | |
| US20110165057A1 (en) | Plasma cvd device, dlc film, and method for depositing thin film | |
| MY167045A (en) | Sealed elastomer bonded si electrodes and the like for reduced particle contamination in dielectric etch | |
| KR20150094686A (ko) | 프로세스 챔버에 플라즈마를 제공하기 위한 장치 | |
| TW201145385A (en) | Gas shower structure and substrate processing apparatus | |
| TW201438096A (zh) | 基板載置台及基板處理裝置 | |
| TW201001530A (en) | Electrode structure and substrate processing apparatus | |
| KR100793553B1 (ko) | 밀봉 부품 및 기판 처리 장치 | |
| US20060108069A1 (en) | Plasma reaction chamber and captive silicon electrode plate for processing semiconductor wafers | |
| US20090083953A1 (en) | Clamp mechanism for a backing plate disposed in a pecvd chamber | |
| JP2002043401A (ja) | 載置装置 | |
| KR101189905B1 (ko) | 전극용 플라즈마 실드 | |
| KR101311723B1 (ko) | 플라즈마 식각 장치 및 이를 이용하는 기판의 식각 방법 |