JP5341073B2 - 熱伝導性ガスケットおよびｏリングを利用する電極アセンブリおよびプラズマ処理室 - Google Patents

熱伝導性ガスケットおよびｏリングを利用する電極アセンブリおよびプラズマ処理室 Download PDF

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JP5341073B2
JP5341073B2 JP2010512243A JP2010512243A JP5341073B2 JP 5341073 B2 JP5341073 B2 JP 5341073B2 JP 2010512243 A JP2010512243 A JP 2010512243A JP 2010512243 A JP2010512243 A JP 2010512243A JP 5341073 B2 JP5341073 B2 JP 5341073B2
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control plate
silicon
thermal control
electrode
thermally conductive
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JP2010529303A (ja
JP2010529303A5 (enExample
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パトリック・ロジャー
ディンドサ・ラージ
ベテンコート・グレッグ
マラクタノブ・アレクセイ
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2010512243A 2007-06-13 2008-05-22 熱伝導性ガスケットおよびｏリングを利用する電極アセンブリおよびプラズマ処理室 Active JP5341073B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US92910707P 2007-06-13 2007-06-13
US60/929,107 2007-06-13
US11/896,375 US7862682B2 (en) 2007-06-13 2007-08-31 Showerhead electrode assemblies for plasma processing apparatuses
US11/896,375 2007-08-31
US12/112,112 2008-04-30
US12/112,112 US8216418B2 (en) 2007-06-13 2008-04-30 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
PCT/US2008/064488 WO2008156958A2 (en) 2007-06-13 2008-05-22 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings

Publications (3)

Publication Number Publication Date
JP2010529303A JP2010529303A (ja) 2010-08-26
JP2010529303A5 JP2010529303A5 (enExample) 2011-06-30
JP5341073B2 true JP5341073B2 (ja) 2013-11-13

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JP2010512243A Active JP5341073B2 (ja) 2007-06-13 2008-05-22 熱伝導性ガスケットおよびｏリングを利用する電極アセンブリおよびプラズマ処理室

Country Status (6)

Country Link
US (1) US8216418B2 (enExample)
JP (1) JP5341073B2 (enExample)
KR (1) KR101541201B1 (enExample)
CN (1) CN101715605B (enExample)
TW (1) TWI453817B (enExample)
WO (1) WO2008156958A2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7862682B2 (en) * 2007-06-13 2011-01-04 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8216418B2 (en) 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US8187414B2 (en) * 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8221582B2 (en) * 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
SG169960A1 (en) 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
US8274756B2 (en) * 2009-12-15 2012-09-25 HGST Netherlands B.V. Use of carbon nanotubes to form conductive gaskets deployed in sensitive environments
US8529729B2 (en) 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP2013254901A (ja) * 2012-06-08 2013-12-19 Toshiba Corp シール材およびエッチング装置
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
US8893702B2 (en) 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses
KR101560623B1 (ko) * 2014-01-03 2015-10-15 주식회사 유진테크 기판처리장치 및 기판처리방법
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
FR3061914B1 (fr) * 2017-01-16 2019-05-31 Kobus Sas Chambre de traitement pour un reacteur de depot chimique en phase vapeur (cvd) et procede de thermalisation mis en œuvre dans cette chambre
TWI815813B (zh) * 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10811232B2 (en) * 2017-08-08 2020-10-20 Applied Materials, Inc. Multi-plate faceplate for a processing chamber
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
CN110942969B (zh) * 2018-09-21 2022-08-23 中微半导体设备(上海)股份有限公司 一种气体喷淋头组件及其等离子体处理设备
JP7097284B2 (ja) * 2018-12-06 2022-07-07 東京エレクトロン株式会社 プラズマ処理装置
KR102198929B1 (ko) * 2019-02-28 2021-01-06 세메스 주식회사 기판 처리 장치의 가스 공급 유닛
CN112837985B (zh) * 2019-11-22 2023-01-24 中微半导体设备(上海)股份有限公司 上电极组件以及等离子体处理设备
JP7583663B2 (ja) 2021-04-01 2024-11-14 東京エレクトロン株式会社 上部電極アセンブリ
US20250054778A1 (en) * 2021-12-15 2025-02-13 Lam Research Corporation Improved thermal and electrical interface between parts in an etch chamber
CN120221370A (zh) * 2023-12-27 2025-06-27 中微半导体设备(上海)股份有限公司 等离子体处理设备、上电极组件及其装配方法

Family Cites Families (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783173A (en) * 1972-05-19 1974-01-01 Us Army Gasket-electrically conductive
US4654754A (en) * 1982-11-02 1987-03-31 Fairchild Weston Systems, Inc. Thermal link
US4595484A (en) * 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
US4782893A (en) * 1986-09-15 1988-11-08 Trique Concepts, Inc. Electrically insulating thermally conductive pad for mounting electronic components
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US4792378A (en) * 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4913696A (en) * 1987-12-21 1990-04-03 E. I. Du Pont De Nemours And Company Support arrangement for a temperature sensor
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
DE69328687D1 (de) * 1993-07-06 2000-06-21 Toshiba Kawasaki Kk Wärmeleitende platte
CA2129073C (en) * 1993-09-10 2007-06-05 John P. Kalinoski Form-in-place emi gaskets
DE4339786C5 (de) * 1993-11-18 2004-02-05 Emi-Tec Elektronische Materialien Gmbh Verfahren zur Herstellung einer Anordung zur Wärmeableitung
US5545473A (en) * 1994-02-14 1996-08-13 W. L. Gore & Associates, Inc. Thermally conductive interface
JP3534940B2 (ja) * 1995-04-20 2004-06-07 株式会社荏原製作所 薄膜気相成長装置
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5679457A (en) * 1995-05-19 1997-10-21 The Bergquist Company Thermally conductive interface for electronic devices
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
US5932007A (en) * 1996-06-04 1999-08-03 General Signal Technology Corporation Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system
JP3480271B2 (ja) * 1997-10-07 2003-12-15 東京エレクトロン株式会社 熱処理装置のシャワーヘッド構造
US6096414A (en) * 1997-11-25 2000-08-01 Parker-Hannifin Corporation High dielectric strength thermal interface material
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6131646A (en) * 1998-01-19 2000-10-17 Trw Inc. Heat conductive interface material
US6220607B1 (en) * 1998-04-17 2001-04-24 Applied Materials, Inc. Thermally conductive conformal media
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6050216A (en) * 1998-08-21 2000-04-18 M.E.C. Technology, Inc. Showerhead electrode for plasma processing
US6379491B1 (en) * 1998-10-30 2002-04-30 Promos Technologies, Inc. Plasma chamber with erosion resistive securement screws
WO2000060658A1 (fr) * 1999-04-06 2000-10-12 Tokyo Electron Limited Electrode, etage de tranche, dispositif a plasma, et procede de fabrication d'une electrode et d'un etage de tranche
US6165612A (en) * 1999-05-14 2000-12-26 The Bergquist Company Thermally conductive interface layers
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6200415B1 (en) * 1999-06-30 2001-03-13 Lam Research Corporation Load controlled rapid assembly clamp ring
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6496373B1 (en) * 1999-11-04 2002-12-17 Amerasia International Technology, Inc. Compressible thermally-conductive interface
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6343647B2 (en) * 2000-01-11 2002-02-05 Thermax International, Ll.C. Thermal joint and method of use
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6170432B1 (en) * 2000-01-24 2001-01-09 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6475933B1 (en) * 2000-01-27 2002-11-05 Northrop Grumman Corporation Highly conductive elastomeric sheet
JP3990867B2 (ja) * 2000-01-31 2007-10-17 キヤノン株式会社 堆積膜形成装置および堆積膜形成方法
KR100378871B1 (ko) * 2000-02-16 2003-04-07 주식회사 아펙스 라디칼 증착을 위한 샤워헤드장치
PT1264126E (pt) * 2000-03-06 2008-01-10 Interface Solutions Inc Juntas de vedação com propriedades controladas de aderência à superfície de flanges
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
JP2002093777A (ja) * 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置
US6412437B1 (en) * 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6651736B2 (en) * 2001-06-28 2003-11-25 Intel Corporation Short carbon fiber enhanced thermal grease
US20030106644A1 (en) * 2001-07-19 2003-06-12 Sirkis Murray D. Electrode apparatus and method for plasma processing
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
JP4082720B2 (ja) * 2001-09-10 2008-04-30 キヤノンアネルバ株式会社 基板表面処理装置
US20030047282A1 (en) * 2001-09-10 2003-03-13 Yasumi Sago Surface processing apparatus
US6618249B2 (en) * 2002-02-05 2003-09-09 Quantum Corporation Thermal cooling system for densely packed storage devices
JP4102873B2 (ja) * 2002-03-29 2008-06-18 東京エレクトロン株式会社 プラズマ処理装置用電極板及びプラズマ処理装置
JP3868341B2 (ja) * 2002-04-22 2007-01-17 日清紡績株式会社 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置
US7208192B2 (en) * 2002-05-31 2007-04-24 Parker-Hannifin Corporation Thermally or electrically-conductive form-in-place gap filter
JP3714924B2 (ja) * 2002-07-11 2005-11-09 東京エレクトロン株式会社 プラズマ処理装置
CA2514496C (en) * 2003-01-23 2014-07-29 William Marsh Rice University Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices
US7153388B2 (en) * 2003-03-31 2006-12-26 Lam Research Corporation Chamber for high-pressure wafer processing and method for making the same
US7205050B2 (en) * 2003-06-09 2007-04-17 Permatex, Inc. Low shear adhesion RTV silicone
JP2005019606A (ja) * 2003-06-25 2005-01-20 Anelva Corp プラズマ処理装置におけるガスシャワーヘッドまたはターゲットプレートを電極に固定する装置
US7137444B2 (en) * 2003-09-08 2006-11-21 Pacific Rubber & Packing, Inc. Heat-transfer interface device between a source of heat and a heat-receiving object
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
IL160145A0 (en) * 2004-01-29 2004-06-20 Univ Ben Gurion Method for the preparation of dispersions of carbon nanotubes
JP4404303B2 (ja) * 2004-02-03 2010-01-27 株式会社アルバック プラズマｃｖｄ装置及び成膜方法
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US20060054280A1 (en) * 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
KR100596327B1 (ko) * 2004-09-08 2006-07-06 주식회사 에이디피엔지니어링 플라즈마 처리장치
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
KR100628888B1 (ko) * 2004-12-27 2006-09-26 삼성전자주식회사 샤워 헤드 온도 조절 장치 및 이를 갖는 막 형성 장치
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
KR100745971B1 (ko) 2005-04-08 2007-08-02 정경철 7개 규격의 시력교정용 핀홀렌즈 세트
JP4506557B2 (ja) 2005-05-18 2010-07-21 株式会社島津製作所 シャワーヘッドおよび表面波励起プラズマ処理装置
KR100629358B1 (ko) * 2005-05-24 2006-10-02 삼성전자주식회사 샤워 헤드
JP2007043147A (ja) * 2005-07-29 2007-02-15 Samsung Electronics Co Ltd 原子層蒸着工程を用いたシリコンリッチナノクリスタル構造物の形成方法及びこれを用いた不揮発性半導体装置の製造方法
US8679252B2 (en) * 2005-09-23 2014-03-25 Lam Research Corporation Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
JP4777790B2 (ja) 2005-09-29 2011-09-21 東京エレクトロン株式会社 プラズマ処理室用構造物、プラズマ処理室、及びプラズマ処理装置
US8789493B2 (en) * 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
US20080081114A1 (en) * 2006-10-03 2008-04-03 Novellus Systems, Inc. Apparatus and method for delivering uniform fluid flow in a chemical deposition system
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
JP2008103589A (ja) 2006-10-20 2008-05-01 Tokyo Cathode Laboratory Co Ltd 半導体処理装置用シャワーヘッド及び半導体処理装置のシャワーヘッドに用いられる表側電極板
US7806413B2 (en) * 2006-11-08 2010-10-05 Federal-Mogul Corporation Static gasket
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8216418B2 (en) 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
KR101519684B1 (ko) * 2007-09-25 2015-05-12 램 리써치 코포레이션 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리를 위한 온도 제어 모듈
US8152954B2 (en) * 2007-10-12 2012-04-10 Lam Research Corporation Showerhead electrode assemblies and plasma processing chambers incorporating the same
TWI508129B (zh) * 2007-10-31 2015-11-11 Lam Res Corp 利用氣體壓力來控制液體冷卻劑與構件體間之熱傳導的溫度控制模組
JP5650547B2 (ja) * 2008-03-14 2015-01-07 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ カムロック電極クランプ
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8679288B2 (en) * 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US20100000684A1 (en) * 2008-07-03 2010-01-07 Jong Yong Choi Dry etching apparatus
US8161906B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8221582B2 (en) * 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US8272346B2 (en) * 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode

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Publication number Publication date
US20080308229A1 (en) 2008-12-18
JP2010529303A (ja) 2010-08-26
WO2008156958A3 (en) 2009-02-19
KR101541201B1 (ko) 2015-07-31
US8216418B2 (en) 2012-07-10
CN101715605B (zh) 2011-11-23
KR20100048991A (ko) 2010-05-11
WO2008156958A2 (en) 2008-12-24
TW200917359A (en) 2009-04-16
TWI453817B (zh) 2014-09-21
CN101715605A (zh) 2010-05-26

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