JP6689937B2 - 真空プロセス・チャンバの構成部品及び製造方法 - Google Patents
真空プロセス・チャンバの構成部品及び製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 63
- 229910000679 solder Inorganic materials 0.000 claims description 51
- 239000011888 foil Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000000919 ceramic Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 229920005548 perfluoropolymer Polymers 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 73
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 41
- 238000012546 transfer Methods 0.000 description 21
- 238000012545 processing Methods 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000002131 composite material Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000013529 heat transfer fluid Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
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- 239000011148 porous material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- -1 but not limited to Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
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- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009428 plumbing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/20—Tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/02—Iron or ferrous alloys
- B23K2103/04—Steel or steel alloys
- B23K2103/05—Stainless steel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/10—Aluminium or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B5/00—Joining sheets or plates, e.g. panels, to one another or to strips or bars parallel to them
- F16B5/08—Joining sheets or plates, e.g. panels, to one another or to strips or bars parallel to them by means of welds or the like
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Gasket Seals (AREA)
Description
11:第1の部分
12:第2の部分
13、75:Oリング
14:外側半径方向部分
15:内側半径方向部分
16:はんだ接合部
17、37、39a、39b、78:溝
18:はんだ
19:間隙
20:基板支持部
22:基板
24:静電チャック
26:台座
27:静電パック
29:環状フランジ
30:誘電体
32:電極
33:熱電対
34:基板受け面
38:ガス・ポート
40:台座フランジ
41、50、92:孔
42:ベースプレート
44:コネクタ
45:リフトピン
46:周辺レッジ
49:電極柱
52:中央突起部
53:環状トラフ
54a、54b、54c:開口部
55:キャビティ
56:熱伝導板
57:流体供給部
58:流体チャネル
61、126:導管
72:ガス管
73:反応性箔
74:ガス・カプラー
76:電気コネクタ
80:ハウジング
82:可動柱
83:ばね
84:ベローズ
86:熱導体
100:装置
102:チャンバ
104:壁
106:天井
108:側壁
110:底壁
112:プロセス区域
120:ガス供給部
122:プロセス・ガス源
124:ガス分配器
128:ガス流量弁
134:流れ制御弁
140:排気部
148:絞り弁
150:ポンプ
154:ガス・エナジャイザ
160:電極電源
164:インダクタ・コイル
170:ターゲット
174:シールド
176:堆積リング
178:カバー・リング
180:基板搬送部
184:ロボットアーム
190:リフトピン・システム
200:チャンバ・コントローラ
Claims (14)
- 真空プロセス・チャンバ内で用いるための構成部品であって、
第1の熱膨張係数を有する第1の材料を有し、基板を受けるための受け面を有する第1の部分であって、前記受け面が、内側円形溝で終端する放射状の交差する溝によって形成される複数の隆起したメサを有する、第1の部分と、
前記第1の熱膨張係数と異なる第2の熱膨張係数を有する第2の材料を有し、複数の孔を有する周辺レッジを有する第2の部分と、
前記第1の部分と前記第2の部分との間で圧縮され、前記構成部品の外側半径方向部分及び内側半径方向部分を定める、少なくとも1つのOリングと、
前記第1の部分を前記第2の部分に接合して前記第1の部分と前記第2の部分との間に気密シールをもたらし、その結果、前記外側半径方向部分及び前記内側半径方向部分のうちの一方が真空下にあり、前記外側半径方向部分及び前記内側半径方向部分のうちの他方が大気圧下にあるとき、前記気密シールが前記外側半径方向部分と前記内側半径方向部分との間の漏れを防止する、はんだ接合部と、を含み、
前記Oリングは、前記はんだ接合部の前記内側半径方向部分から1mm〜5mm離間している、構成部品。 - 前記第1の部分及び前記第2の部分は金属である、請求項1に記載の構成部品。
- 前記第1の部分及び前記第2の部分の一方は金属であり、前記第1の部分及び前記第2の部分の他方はセラミックである、請求項1に記載の構成部品。
- 前記少なくとも1つのOリングは、前記第1の部分及び前記第2の部分の1つ又はそれ以上の中の溝内に配置されている、請求項1に記載の構成部品。
- 前記第1の部分はセラミック・ボディを含む静電パックであり、前記第2の部分は金属ボディを含むベースプレートである、請求項1に記載の構成部品。
- 前記少なくとも1つのOリングは圧縮可能である、請求項1に記載の構成部品。
- 前記少なくとも1つのOリングはペルフルオロポリマーで作製されている、請求項6に記載の構成部品。
- 前記少なくとも1つのOリングはソフト金属で作製されている、請求項6に記載の構成部品。
- 圧縮状態にある前記少なくとも1つのOリングは、圧縮されていない状態にあるときの厚さの75%の厚さを有する、請求項6に記載の構成部品。
- 前記ベースプレートを通って静電パックへ延長する少なくとも1つの電気接点をさらに備え、前記少なくとも1つの電気接点は、少なくとも1つのOリングによって包囲されている、請求項5に記載の構成部品。
- 前記はんだ接合部は、電気的に点火される箔材料を用いて形成されている、請求項1に記載の構成部品。
- 第1の部分と第2の部分との間に少なくとも1つのOリングを含む構成部品であって、前記構成部品は、圧入されて前記少なくとも1つのOリングを圧縮し、はんだ接合部により相互接合されて、それらの間に気密シールをもたらし、
前記構成部品は、前記第2の部分を通って前記第1の部分に延びる少なくとも1つの電気的接続部を含み、前記少なくとも1つの電気的接続部は、前記少なくとも1つのOリングによって囲まれており、前記Oリングは、前記はんだ接合部の内側部分から1mm〜5mm離間しており、前記第1の部分は、第1の熱膨張係数を有する第1の材料と、基板を受けるための受け面とを有し、前記受け面は、内側円形溝で終端する放射状の交差する溝によって形成される複数の隆起したメサを有し、前記第2の部分は、前記第1の熱膨張係数と異なる第2の熱膨張係数を有する第2の材料を有し、前記第2の部分は、複数の孔を有する周辺レッジを有する、構成部品。 - 前記少なくとも1つのOリングは、前記構成部品の外側部分及び内側部分を定め、前記はんだ接合部は前記第1の部分と前記第2の部分との間に気密シールをもたらし、前記外側部分及び前記内側部分のうちの一方が真空下にあり、前記外側部分及び前記内側部分のうちの他方が大気圧下にあるとき、前記気密シールは前記外側部分と前記内側部分との間の漏れを防ぐように構成されている、請求項12に記載の構成部品。
- 前記はんだ接合部は、前記第1の部分と前記第2の部分との間の反応性箔を点火することにより形成されている、請求項12に記載の構成部品。
Applications Claiming Priority (2)
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US12/892,219 US9969022B2 (en) | 2010-09-28 | 2010-09-28 | Vacuum process chamber component and methods of making |
US12/892,219 | 2010-09-28 |
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JP (3) | JP6180935B2 (ja) |
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JP5816454B2 (ja) * | 2011-05-09 | 2015-11-18 | 新光電気工業株式会社 | 基板温調固定装置 |
US8684256B2 (en) * | 2011-11-30 | 2014-04-01 | Component Re-Engineering Company, Inc. | Method for hermetically joining plate and shaft devices including ceramic materials used in semiconductor processing |
US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
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US9604249B2 (en) | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
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JP2017168852A (ja) | 2017-09-21 |
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JP6563438B2 (ja) | 2019-08-21 |
US9969022B2 (en) | 2018-05-15 |
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US20120076574A1 (en) | 2012-03-29 |
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