JP2019016813A - 真空プロセス・チャンバの構成部品及び製造方法 - Google Patents
真空プロセス・チャンバの構成部品及び製造方法 Download PDFInfo
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- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/20—Tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/02—Iron or ferrous alloys
- B23K2103/04—Steel or steel alloys
- B23K2103/05—Stainless steel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/10—Aluminium or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B5/00—Joining sheets or plates, e.g. panels, to one another or to strips or bars parallel to them
- F16B5/08—Joining sheets or plates, e.g. panels, to one another or to strips or bars parallel to them by means of welds or the like
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
- Drying Of Semiconductors (AREA)
- Gasket Seals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
11:第1の部分
12:第2の部分
13、75:Oリング
14:外側半径方向部分
15:内側半径方向部分
16:はんだ接合部
17、37、39a、39b、78:溝
18:はんだ
19:間隙
20:基板支持部
22:基板
24:静電チャック
26:台座
27:静電パック
29:環状フランジ
30:誘電体
32:電極
33:熱電対
34:基板受け面
38:ガス・ポート
40:台座フランジ
41、50、92:孔
42:ベースプレート
44:コネクタ
45:リフトピン
46:周辺レッジ
49:電極柱
52:中央突起部
53:環状トラフ
54a、54b、54c:開口部
55:キャビティ
56:熱伝導板
57:流体供給部
58:流体チャネル
61、126:導管
72:ガス管
73:反応性箔
74:ガス・カプラー
76:電気コネクタ
80:ハウジング
82:可動柱
83:ばね
84:ベローズ
86:熱導体
100:装置
102:チャンバ
104:壁
106:天井
108:側壁
110:底壁
112:プロセス区域
120:ガス供給部
122:プロセス・ガス源
124:ガス分配器
128:ガス流量弁
134:流れ制御弁
140:排気部
148:絞り弁
150:ポンプ
154:ガス・エナジャイザ
160:電極電源
164:インダクタ・コイル
170:ターゲット
174:シールド
176:堆積リング
178:カバー・リング
180:基板搬送部
184:ロボットアーム
190:リフトピン・システム
200:チャンバ・コントローラ
Claims (15)
- 真空プロセス・チャンバ内で用いるための構成部品であって、
第1の部分と、
第2の部分と、
前記第1の部分と前記第2の部分との間で圧縮され、前記構成部品の外側半径方向部分及び内側半径方向部分を定める、少なくとも1つのOリングと、
前記第1の部分を前記第2の部分に接合して前記第1の部分と前記第2の部分との間に気密シールをもたらし、その結果、前記外側部分及び前記内側部分のうちの一方が真空下にあり、前記外側部分及び前記内側部分のうちの他方が大気圧下にあるとき、前記気密シールが前記外側部分と前記内側部分との間の漏れを防止する、はんだ接合部と、
を含むことを特徴とする構成部品。 - 前記少なくとも1つのOリングは、前記第1の部分及び前記第2の部分の1つ又はそれ以上の中の溝内に配置されることを特徴とする、請求項1に記載の構成部品。
- 前記第1の部分はセラミック・ボディを含む静電パックであり、前記第2の部分は金属ボディを含むベースプレートであることを特徴とする、請求項1〜請求項2のいずれか1項に記載の構成部品。
- 前記少なくとも1つのOリングはペルフルオロポリマーで作製されることを特徴とする、請求項1〜請求項3のいずれか1項に記載の構成部品。
- 圧縮状態にある前記少なくとも1つのOリングは、圧縮されていない状態にあるときの厚さの約75%の厚さを有することを特徴とする、請求項1〜請求項4のいずれか1項に記載の構成部品。
- 前記はんだ接合部は、電気的に点火される箔材料を用いて形成されることを特徴とする、請求項1〜請求項5のいずれか1項に記載の構成部品。
- 真空チャンバの構成部品を作製する方法であって、
第1の部分及び第2の部分を準備するステップと、
前記第1の部分と前記第2の部分との間に、反応性箔と、外側部分及び内側部分を定める少なくとも1つのOリングとを配置するステップと、
前記反応性箔を点火して前記箔を局所的に加熱し、それらの間に前記Oリングを有する前記第1の部分と前記第2の部分との間に低温はんだ接合部を形成し、前記第1の部分と前記第2の部分との間に気密シールをもたらし、前記外側部分及び前記内側部分のうちの一方が真空下にあり、前記外側部分及び前記内側部分のうちの他方が大気圧下にあるとき、前記気密シールが前記外側部分と前記内側部分の間の漏れを防止するようにするステップと、
を含むことを特徴とする方法。 - 前記反応性箔の点火前に、前記第1の部分及び前記第2の部分のうちの一方又は両方の上にはんだ濡れ薄層を準備するステップをさらに含み、前記はんだ濡れ薄層は、前記反応性箔及び前記少なくとも1つのOリングに隣接することを特徴とする、請求項7に記載の方法。
- 前記第1の部分及び前記第2の部分を互いに押し付けて、前記少なくとも1つのOリングが圧縮されていない厚さの約75%の厚さに圧縮されるようにするステップをさらに含むことを特徴とする、請求項7又は請求項8に記載の方法。
- 前記第1の部分と前記第2の部分との間の前記はんだ接合部は、前記第1の部分又は前記第2の部分の温度を上げずに形成されることを特徴とする、請求項7〜請求項9のいずれか1項に記載の方法。
- 前記反応性箔の点火は、約50℃未満の温度で行われることを特徴とする、請求項7〜請求項10のいずれか1項に記載の方法。
- 前記はんだ接合部は、約2秒未満で形成されることを特徴とする、請求項7〜請求項11のいずれか1項に記載の方法。
- ある電位により前記反応性箔が点火されることを特徴とする、請求項7〜請求項12のいずれか1項に記載の方法。
- 第1の部分と第2の部分との間に少なくとも1つのOリングを含む構成部品であって、前記構成部品は、圧入されて前記少なくとも1つのOリングを圧縮し、はんだ接合部により相互接合されて、それらの間に気密シールをもたらすことを特徴とする構成部品。
- 前記少なくとも1つのOリングは、前記構成部品の外側部分及び内側部分を定め、前記はんだ接合部は前記第1の部分と前記第2の部分との間に気密シールをもたらし、前記外側部分及び前記内側部分のうちの一方が真空下にあり、前記外側部分及び前記内側部分のうちの他方が大気圧下にあるとき、前記気密シールは前記外側部分と前記内側部分との間の漏れを防ぐことを特徴とする、請求項14に記載の構成部品。
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JP5816454B2 (ja) * | 2011-05-09 | 2015-11-18 | 新光電気工業株式会社 | 基板温調固定装置 |
US9556074B2 (en) * | 2011-11-30 | 2017-01-31 | Component Re-Engineering Company, Inc. | Method for manufacture of a multi-layer plate device |
US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
US9090046B2 (en) | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
US9604249B2 (en) | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
US9685356B2 (en) | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
US8941969B2 (en) | 2012-12-21 | 2015-01-27 | Applied Materials, Inc. | Single-body electrostatic chuck |
US9358702B2 (en) | 2013-01-18 | 2016-06-07 | Applied Materials, Inc. | Temperature management of aluminium nitride electrostatic chuck |
US9669653B2 (en) | 2013-03-14 | 2017-06-06 | Applied Materials, Inc. | Electrostatic chuck refurbishment |
US9887121B2 (en) | 2013-04-26 | 2018-02-06 | Applied Materials, Inc. | Protective cover for electrostatic chuck |
US9666466B2 (en) | 2013-05-07 | 2017-05-30 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
US9865434B2 (en) | 2013-06-05 | 2018-01-09 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US10008404B2 (en) * | 2014-10-17 | 2018-06-26 | Applied Materials, Inc. | Electrostatic chuck assembly for high temperature processes |
US9999947B2 (en) * | 2015-05-01 | 2018-06-19 | Component Re-Engineering Company, Inc. | Method for repairing heaters and chucks used in semiconductor processing |
US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
US20170211185A1 (en) * | 2016-01-22 | 2017-07-27 | Applied Materials, Inc. | Ceramic showerhead with embedded conductive layers |
US10249526B2 (en) | 2016-03-04 | 2019-04-02 | Applied Materials, Inc. | Substrate support assembly for high temperature processes |
US20190043698A1 (en) * | 2017-08-03 | 2019-02-07 | Applied Materials, Inc. | Electrostatic shield for substrate support |
DE102017215026A1 (de) * | 2017-08-28 | 2019-02-28 | Robert Bosch Gmbh | Einpresspin für eine elektrische Kontaktieranordnung |
CN109837518B (zh) * | 2017-11-28 | 2021-06-08 | 北京北方华创微电子装备有限公司 | 沉积环固定组件、承载装置及反应腔室 |
US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
US10957572B2 (en) | 2018-05-02 | 2021-03-23 | Applied Materials, Inc. | Multi-zone gasket for substrate support assembly |
JP7090465B2 (ja) * | 2018-05-10 | 2022-06-24 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
US11293551B2 (en) | 2018-09-30 | 2022-04-05 | ColdQuanta, Inc. | Break-seal system with breakable-membrane bridging rings |
JP7462545B2 (ja) | 2020-12-14 | 2024-04-05 | 日立Geニュークリア・エナジー株式会社 | フランジ接続構造、およびフランジの接続方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158172A (ja) * | 2001-11-21 | 2003-05-30 | Kyocera Corp | ウェハ保持装置 |
JP2006009012A (ja) * | 2004-06-22 | 2006-01-12 | Solvay Solexis Spa | フルオロエラストマーゲル |
JP2006522722A (ja) * | 2003-04-09 | 2006-10-05 | リアクティブ ナノテクノロジーズ,インク. | 気密封止製品および関連製造方法 |
JP3159306U (ja) * | 2006-10-13 | 2010-05-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | シーリングアセンブリを有する着脱式静電チャック |
JP2010199107A (ja) * | 2009-02-23 | 2010-09-09 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置の基板支持台 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5477009A (en) * | 1994-03-21 | 1995-12-19 | Motorola, Inc. | Resealable multichip module and method therefore |
US5886863A (en) * | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
JP3485390B2 (ja) | 1995-07-28 | 2004-01-13 | 京セラ株式会社 | 静電チャック |
JP3622353B2 (ja) | 1996-07-12 | 2005-02-23 | 東陶機器株式会社 | 静電チャックステージ及びその製造方法 |
US6520778B1 (en) * | 1997-02-18 | 2003-02-18 | Formfactor, Inc. | Microelectronic contact structures, and methods of making same |
JPH10270540A (ja) | 1997-03-26 | 1998-10-09 | Nippon Cement Co Ltd | 静電チャックデバイスおよび静電チャック用基台 |
JPH11163109A (ja) | 1997-12-01 | 1999-06-18 | Kyocera Corp | ウエハ保持装置 |
JPH11176919A (ja) | 1997-12-08 | 1999-07-02 | Sony Corp | 静電チャック |
US6241825B1 (en) | 1999-04-16 | 2001-06-05 | Cutek Research Inc. | Compliant wafer chuck |
US6490146B2 (en) | 1999-05-07 | 2002-12-03 | Applied Materials Inc. | Electrostatic chuck bonded to base with a bond layer and method |
JP2001210705A (ja) | 2000-01-28 | 2001-08-03 | Toshiba Corp | 静電チャック、処理装置および半導体装置の製造方法 |
US6991856B2 (en) | 2000-05-02 | 2006-01-31 | Johns Hopkins University | Methods of making and using freestanding reactive multilayer foils |
US6736942B2 (en) | 2000-05-02 | 2004-05-18 | Johns Hopkins University | Freestanding reactive multilayer foils |
WO2001083623A2 (en) | 2000-05-02 | 2001-11-08 | Johns Hopkins University | Method of making reactive multilayer foil and resulting product |
KR20010111058A (ko) * | 2000-06-09 | 2001-12-15 | 조셉 제이. 스위니 | 전체 영역 온도 제어 정전기 척 및 그 제조방법 |
JP2002293655A (ja) * | 2001-03-29 | 2002-10-09 | Ngk Insulators Ltd | 金属端子とセラミック部材との接合構造、金属部材とセラミック部材との接合構造および金属端子とセラミック部材との接合材 |
US6538872B1 (en) | 2001-11-05 | 2003-03-25 | Applied Materials, Inc. | Electrostatic chuck having heater and method |
JP4089820B2 (ja) | 2003-04-02 | 2008-05-28 | 日本発条株式会社 | 静電チャック |
US7697260B2 (en) | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
US7292439B2 (en) | 2005-01-19 | 2007-11-06 | Raytheon Company | Thermal management system and method for electronic assemblies |
JP4783213B2 (ja) | 2005-06-09 | 2011-09-28 | 日本碍子株式会社 | 静電チャック |
US20090186195A1 (en) | 2006-09-08 | 2009-07-23 | Reactive Nanotechnologies, Inc. | Reactive Multilayer Joining With Improved Metallization Techniques |
JP2009094137A (ja) | 2007-10-04 | 2009-04-30 | Sei Hybrid Kk | ウエハ保持体および半導体製造装置 |
KR101582785B1 (ko) * | 2008-08-12 | 2016-01-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 정전 척 조립체 |
US9520314B2 (en) | 2008-12-19 | 2016-12-13 | Applied Materials, Inc. | High temperature electrostatic chuck bonding adhesive |
-
2010
- 2010-09-28 US US12/892,219 patent/US9969022B2/en active Active
-
2011
- 2011-09-27 WO PCT/US2011/053426 patent/WO2012047636A2/en active Application Filing
- 2011-09-27 JP JP2013531715A patent/JP6180935B2/ja active Active
-
2017
- 2017-04-26 JP JP2017087133A patent/JP6563438B2/ja active Active
-
2018
- 2018-10-16 JP JP2018194809A patent/JP6689937B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158172A (ja) * | 2001-11-21 | 2003-05-30 | Kyocera Corp | ウェハ保持装置 |
JP2006522722A (ja) * | 2003-04-09 | 2006-10-05 | リアクティブ ナノテクノロジーズ,インク. | 気密封止製品および関連製造方法 |
JP2006009012A (ja) * | 2004-06-22 | 2006-01-12 | Solvay Solexis Spa | フルオロエラストマーゲル |
JP3159306U (ja) * | 2006-10-13 | 2010-05-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | シーリングアセンブリを有する着脱式静電チャック |
JP2010199107A (ja) * | 2009-02-23 | 2010-09-09 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置の基板支持台 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2021156979A1 (ja) * | 2020-02-05 | 2021-08-12 |
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JP6563438B2 (ja) | 2019-08-21 |
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US20120076574A1 (en) | 2012-03-29 |
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