TWI442500B - Processing vessel and plasma processing device - Google Patents
Processing vessel and plasma processing device Download PDFInfo
- Publication number
- TWI442500B TWI442500B TW097146781A TW97146781A TWI442500B TW I442500 B TWI442500 B TW I442500B TW 097146781 A TW097146781 A TW 097146781A TW 97146781 A TW97146781 A TW 97146781A TW I442500 B TWI442500 B TW I442500B
- Authority
- TW
- Taiwan
- Prior art keywords
- protective member
- processing container
- pad
- container according
- plasma
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 135
- 239000000758 substrate Substances 0.000 claims description 100
- 230000001681 protective effect Effects 0.000 claims description 98
- 239000000919 ceramic Substances 0.000 claims description 32
- 230000007797 corrosion Effects 0.000 claims description 19
- 238000005260 corrosion Methods 0.000 claims description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 description 64
- 238000012546 transfer Methods 0.000 description 38
- 239000007789 gas Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 25
- 239000007921 spray Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 22
- 238000001020 plasma etching Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 230000002159 abnormal effect Effects 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000007743 anodising Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007312160A JP5329072B2 (ja) | 2007-12-03 | 2007-12-03 | 処理容器およびプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200939378A TW200939378A (en) | 2009-09-16 |
| TWI442500B true TWI442500B (zh) | 2014-06-21 |
Family
ID=40734975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097146781A TWI442500B (zh) | 2007-12-03 | 2008-12-02 | Processing vessel and plasma processing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5329072B2 (ko) |
| KR (2) | KR20090057921A (ko) |
| CN (1) | CN101452805B (ko) |
| TW (1) | TWI442500B (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101157790B1 (ko) * | 2009-12-31 | 2012-06-20 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
| TWI502617B (zh) * | 2010-07-21 | 2015-10-01 | 應用材料股份有限公司 | 用於調整電偏斜的方法、電漿處理裝置與襯管組件 |
| CN103109363B (zh) * | 2010-09-17 | 2015-11-25 | 株式会社爱发科 | 真空处理装置 |
| KR101322729B1 (ko) * | 2011-01-27 | 2013-10-29 | 엘아이지에이디피 주식회사 | 플라즈마를 이용한 기판처리장치 |
| TW202418889A (zh) | 2011-10-05 | 2024-05-01 | 美商應用材料股份有限公司 | 包括對稱電漿處理腔室的電漿處理設備與用於此設備的蓋組件 |
| JP6307825B2 (ja) * | 2013-09-25 | 2018-04-11 | 日新イオン機器株式会社 | 防着板支持部材、プラズマ源およびイオンビーム照射装置 |
| JP6435090B2 (ja) * | 2013-10-03 | 2018-12-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9925639B2 (en) * | 2014-07-18 | 2018-03-27 | Applied Materials, Inc. | Cleaning of chamber components with solid carbon dioxide particles |
| JP7105629B2 (ja) * | 2018-06-20 | 2022-07-25 | 東京エレクトロン株式会社 | 自動教示方法及び制御装置 |
| JP7089987B2 (ja) * | 2018-08-22 | 2022-06-23 | 株式会社日本製鋼所 | 原子層堆積装置 |
| CN112447548A (zh) * | 2019-09-03 | 2021-03-05 | 中微半导体设备(上海)股份有限公司 | 一种半导体处理设备及腔室间传送口结构 |
| CN113521539A (zh) * | 2020-04-16 | 2021-10-22 | 汪嵘 | 一种便携式等离子体伤口治疗仪及其使用方法 |
| JP7537846B2 (ja) | 2021-02-02 | 2024-08-21 | 東京エレクトロン株式会社 | 処理容器とプラズマ処理装置、及び処理容器の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5641375A (en) * | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
| JP3113836B2 (ja) * | 1997-03-17 | 2000-12-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4426343B2 (ja) * | 2004-03-08 | 2010-03-03 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| KR100476588B1 (ko) * | 2004-10-20 | 2005-03-17 | 주식회사 래디언테크 | 반도체 식각장치의 프로세스 챔버 |
| JP4856978B2 (ja) * | 2006-02-21 | 2012-01-18 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置及び処理室の内壁の形成方法 |
-
2007
- 2007-12-03 JP JP2007312160A patent/JP5329072B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-02 TW TW097146781A patent/TWI442500B/zh not_active IP Right Cessation
- 2008-12-02 KR KR1020080120942A patent/KR20090057921A/ko active Search and Examination
- 2008-12-03 CN CN2008101789989A patent/CN101452805B/zh active Active
-
2011
- 2011-01-14 KR KR1020110004189A patent/KR101467618B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090057921A (ko) | 2009-06-08 |
| JP2009140939A (ja) | 2009-06-25 |
| TW200939378A (en) | 2009-09-16 |
| KR101467618B1 (ko) | 2014-12-04 |
| KR20110011727A (ko) | 2011-02-08 |
| CN101452805B (zh) | 2011-09-28 |
| CN101452805A (zh) | 2009-06-10 |
| JP5329072B2 (ja) | 2013-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |