TWI441254B - A gas supply device, a substrate processing device, and a supply gas setting method - Google Patents
A gas supply device, a substrate processing device, and a supply gas setting method Download PDFInfo
- Publication number
- TWI441254B TWI441254B TW094143443A TW94143443A TWI441254B TW I441254 B TWI441254 B TW I441254B TW 094143443 A TW094143443 A TW 094143443A TW 94143443 A TW94143443 A TW 94143443A TW I441254 B TWI441254 B TW I441254B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- pipe
- mixed
- gas supply
- supplied
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 76
- 239000000758 substrate Substances 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 13
- 239000007789 gas Substances 0.000 claims description 485
- 238000005259 measurement Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims 4
- 238000003672 processing method Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 description 24
- 238000001020 plasma etching Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004357292A JP4358727B2 (ja) | 2004-12-09 | 2004-12-09 | ガス供給装置，基板処理装置及び供給ガス設定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200633049A TW200633049A (en) | 2006-09-16 |
| TWI441254B true TWI441254B (zh) | 2014-06-11 |
Family
ID=36667053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094143443A TWI441254B (zh) | 2004-12-09 | 2005-12-08 | A gas supply device, a substrate processing device, and a supply gas setting method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4358727B2 (enExample) |
| KR (1) | KR100753692B1 (enExample) |
| CN (1) | CN100390933C (enExample) |
| TW (1) | TWI441254B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI694222B (zh) * | 2015-05-17 | 2020-05-21 | 美商恩特葛瑞斯股份有限公司 | 氣體櫃 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP4895167B2 (ja) * | 2006-01-31 | 2012-03-14 | 東京エレクトロン株式会社 | ガス供給装置，基板処理装置，ガス供給方法 |
| US20080078746A1 (en) | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
| JP5211450B2 (ja) * | 2006-08-15 | 2013-06-12 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| JP5192214B2 (ja) | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置および基板処理方法 |
| JP5378706B2 (ja) * | 2008-05-22 | 2013-12-25 | 東京エレクトロン株式会社 | プラズマ処理装置及びそれに用いられる処理ガス供給装置 |
| JP5452133B2 (ja) * | 2009-08-27 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP5562712B2 (ja) * | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | 半導体製造装置用のガス供給装置 |
| JP5689294B2 (ja) | 2010-11-25 | 2015-03-25 | 東京エレクトロン株式会社 | 処理装置 |
| JP5792563B2 (ja) | 2011-08-31 | 2015-10-14 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| JP2014003234A (ja) * | 2012-06-20 | 2014-01-09 | Tokyo Electron Ltd | プラズマ処理装置、及びプラズマ処理方法 |
| JP6034655B2 (ja) | 2012-10-25 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP6030994B2 (ja) | 2013-05-15 | 2016-11-24 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
| US9620417B2 (en) | 2014-09-30 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method of manufacturing fin-FET devices |
| JP6502779B2 (ja) * | 2015-07-29 | 2019-04-17 | 東京エレクトロン株式会社 | ガス供給系のバルブのリークを検査する方法 |
| JP7073710B2 (ja) | 2017-01-20 | 2022-05-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CH713539A1 (fr) * | 2017-03-03 | 2018-09-14 | Pelco Sarl | Mélangeur de gaz automatique. |
| JP7296854B2 (ja) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | ガス供給方法及び基板処理装置 |
| JP7685507B2 (ja) * | 2020-01-13 | 2025-05-29 | ラム リサーチ コーポレーション | 溝の輪郭を最適化するために複数のゾーンを有するガス分配プレート |
| JP7727528B2 (ja) * | 2021-12-23 | 2025-08-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN117198848A (zh) * | 2022-06-01 | 2023-12-08 | 长鑫存储技术有限公司 | 气体分配装置、等离子体处理装置及方法 |
| CN114774887A (zh) * | 2022-06-22 | 2022-07-22 | 拓荆科技(北京)有限公司 | 气体传输装置、方法和半导体沉积设备 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05136098A (ja) * | 1991-11-15 | 1993-06-01 | Seiko Epson Corp | 半導体装置の製造装置及び半導体装置の製造方法 |
| US5916369A (en) * | 1995-06-07 | 1999-06-29 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
| JPH09289170A (ja) * | 1996-04-23 | 1997-11-04 | Sony Corp | 半導体製造装置 |
| US6210482B1 (en) * | 1999-04-22 | 2001-04-03 | Fujikin Incorporated | Apparatus for feeding gases for use in semiconductor manufacturing |
| CN1240113C (zh) * | 2002-08-20 | 2006-02-01 | 东京毅力科创株式会社 | 等离子体蚀刻方法及装置 |
| JP4127779B2 (ja) * | 2002-08-28 | 2008-07-30 | 株式会社神戸製鋼所 | 熱間等方圧加圧装置および熱間等方圧加圧方法 |
| US20040050326A1 (en) * | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
-
2004
- 2004-12-09 JP JP2004357292A patent/JP4358727B2/ja not_active Expired - Fee Related
-
2005
- 2005-12-08 TW TW094143443A patent/TWI441254B/zh not_active IP Right Cessation
- 2005-12-08 KR KR1020050119216A patent/KR100753692B1/ko not_active Expired - Fee Related
- 2005-12-09 CN CNB2005101303873A patent/CN100390933C/zh not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI694222B (zh) * | 2015-05-17 | 2020-05-21 | 美商恩特葛瑞斯股份有限公司 | 氣體櫃 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006165399A (ja) | 2006-06-22 |
| CN1787170A (zh) | 2006-06-14 |
| KR20060065510A (ko) | 2006-06-14 |
| JP4358727B2 (ja) | 2009-11-04 |
| CN100390933C (zh) | 2008-05-28 |
| KR100753692B1 (ko) | 2007-08-30 |
| TW200633049A (en) | 2006-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |